GK 74 TRANSISTOR Search Results

h11cx

Abstract: GK transistor in5060 SC146D H11C H11C3 gk 02 a 041 H11C1 IN5060 diode GK 74 transistor
Contextual Info: PHOTO SCR OPTOCOUPLERS H11C1 H11C2 H11C3 H11C4 PACKAGE H11C5 SCHEMATIC ANODE 1 6 H11C6 6 GATE 6 CATHODE 2 5 ANODE 1 N/C 3 1 4 CATHODE 6 1 DESCRIPTION The H11C series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled

h11cx

Abstract: GK transistor PHOTO SCR definition IN5060 diode SC146D DATA SHEET Photo SCR H11C3 H11C5 H11C4 scr pins
Contextual Info: PHOTO SCR OPTOCOUPLERS H11C1 H11C2 H11C3 H11C4 PACKAGE H11C5 SCHEMATIC ANODE 1 6 H11C6 6 GATE 6 CATHODE 2 5 ANODE 1 N/C 3 1 4 CATHODE 6 1 DESCRIPTION The H11C series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled

GK 243

Abstract: MPEH
Contextual Info: Optotsolator Specifications H11C4, H11C5, H11C6 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR INCHES MILLIMETERS MIN WAX MIN MAX T h e H 1 1 C 4 , H 1 1 C 5 a n d H 1 1 C 6 a re g a lliu m a rs e n id e , in f r a r e d e m ittin g d io d e s c o u p le d w ith lig h t a ctiv ate d silic o n

distance measure ultrasonic transducer

Abstract: ceag ghg PBT GK 20 gl ultrasonic sensor Stahl 9303 ultrasonics circuits diagram 7 segment display 5011 K1207 ghg 44 ceag GK 74 transistor
Contextual Info: Level and Pressure Product Information Ultrasonics 1 5,00 m 2 5,00 m 1 2 3 4 VEGASON Contents Contents 1 Product description 1.1 2 Function and application 2.1 2.2 2.3 3 Meas. range . 52

h11c4

Abstract: H11C3
Contextual Info: PHOTO SCR OPTOCOUPLERS OPTOELECTRONICS H11C1 H11C2 H11C3 H11C4 H11C5 H11C6 a DESCRIPTION The H11C series consists of a gallium -arsenide infrared em itting diode optically coupled with a light activated silicon controlled rectifier in a dual-in-line package.

4n4001

Abstract: 4N4U 4N40 4N39 GE SCR 1000
Contextual Info: G E SOLI» STATE DÌ 3fl7S0fll DDlltflS 0 optoelectronic specification« 7 W /-Î7 ” Photon Coupled Isolator 4N39,4N40 SVM0OI Ga As Infrared Em itting Diode & Light Activated SCR A B C The GE Solid State 4N39 and 4N40 consist of a gallium arsenide, infrared emitting diode coupled with a light activated silicon con­

H11C2-H11C3

Abstract: Opto-isolator 50V-RGK
Contextual Info: Optoisofator Spécifications H11C1, H11C2, H11C3 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR T he HI 1C1, HI 1C2 and H11C3 are gallium arsenide, infrared em itting diodes coupled with light activated silicon controlled rectifiers in a dual in-line package. T hese devices are also

h13b1

Abstract: ins060 H13A2 4N38 4N38A H11A10 H11AA1 H11AA2 H11B1 H11B2
Contextual Info: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 100 200 30 30 100 100 100 100 50 50 300 300 100 100 100 100 100 100 100 100 100 100 100

H11C2 equivalent

Abstract: HIIC4 sci46d 8T20 rgk 13 st1602 H11C H11C2 220vac relay solid state relay 220v 10a
Contextual Info: PHOTO SCR OPTOCOUPLERS OPTOELECTRONICS H11C1 H11C2 H11C3 H11C4 H11C5 H11C6 DESCRIPTION The H11C series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual-in-line package. FEATURES & APPLICATIONS

s41 hall sensor

Abstract: Russian diode Transistor ML614S IC6001 FP99
Contextual Info: ORDER NO. DSC0703019CE B26 Digital Camera DMC-TZ3P DMC-TZ3PC DMC-TZ3PL DMC-TZ3EB DMC-TZ3EE DMC-TZ3EF DMC-TZ3EG DMC-TZ3EGM DMC-TZ3GC DMC-TZ3GD DMC-TZ3GK DMC-TZ3GN DMC-TZ3GT DMC-TZ3SG DMC-TZ2P DMC-TZ2PC DMC-TZ2PL DMC-TZ2EB DMC-TZ2EE DMC-TZ2EF DMC-TZ2EG DMC-TZ2EGM

GE SCR 1000

Abstract: H11C1 10KC2 10KI1 10KO H11C2 H11C3 JK30 H11C1 GE
Contextual Info: G E SOLI» STÄTE 01 D E | 3 fl 7 5 0 f l l □ D I T 714 1 optoelectronic Specifications . T - 4 / - S “7 Photon Coupled Isolator H11C1,H11C2,H11C3 Ga As Infrared Emitting Diode & Light Activated SCR - M ILLIM ETERS seatino MIN. A T he G E Solid State H 11C 1, H11C2 and H 1 1C3 are gallium arsenide,

photo interrupter module

Abstract: GE SCR 1000 GE SCR 1000 AMP H11C H13B1 4N38 4N38A H11A10 H11AA1 H11AA2
Contextual Info: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER R A TIO MIN. MIN. 1500 1 10% AC INPUT COUPLER H11AA1 H11AA2 1289 128? 1500 1500 I I 20% 10% ID nA MAX. BV c e o (VOLTS) MIN. 50 30 100 200 30 30 100 100

photo interrupter module h13a1

Abstract: H13A1 photo interrupter module DT230B GE SCR 1000 H11C1 4N38 4N38A H11A10 H11AA1
Contextual Info: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H 11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 ID nA MAX. BVc e o (VOLTS) MIN. 50 30 I I 100 200 30 30 20'ä I 20% 20% 10% 100 100 100 100 50 50 300 300 100 100 100 100 100 100

Contextual Info: H V 7 1 6 1 S P A 1 C M O S Im a g e S e n s o r W it h Im a g e S ig n a l P r o c e s s in g Confidential C M O S Im a g e S e n s o r w it h I m a g e S ig n a l P r o c e s s in g H V 7 1 6 1 S P A 1 1 .3 M e g a P ix e l C IS 1 5 fp s @ M C L K 2 1 M H z , P L L 2 x

sci46d

Contextual Info: [s O PHOTO SCR OPTOCOUPLERS OPTOELECTRONICS 4N394N40 DESCRIPTION The 4N39 and 4N40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. FEATURES & APPLICATIONS High efficiency, low degradation, liquid epitaxial LED

Contextual Info: European “Pro Electron" Registered T y p e s _ CNY30, CNY34 Optoisofator Ga As Infrared Emitting Diode and Light Activated SCR SVMBOL C H K INFRARED EM ITTIN G DIODE Power Dissipation -55°C to 50°C *100 Forward Current (Continuous) 60 (-55°C to 50°C)

13001 TRANSISTOR

Abstract: CNY30 CNY30-CNY34 GE SCR 1000 1000C AN006 CNY34 INS080I4
Contextual Info: G E SOLI» STATE 01 Optoelectronic Specifications DE|3fl750fll OanflBG 0 | T ^ h 3-7 Photon Coupled Isolator CNY30-CNY34 Ga As Infrared Emitting Diode & light Activated SCR The GE Solid State CNY30 and CNY34 consist of a gallium arsenide, infrared emitting diode coupled with a light activated silicon con­

4N39T

Abstract: d4n40
Contextual Info: Optoisolator Specifications 4N39, 4N40 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR INCHES M L L IM E T E R S M IN MAX. M IN 8 38 S' S3 ? 62 PEF The 4N 39 an d 4N 40 co n sist of a g allium arsenide, infrared e m ittin g diode cou p led w ith a lig h t activ ated silico n c o n tro lled 5EiT,ri

MOC3000R

Abstract: IC MR5060 MOC3000
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOC3000 MOC3001 6-Pin DIP Optoisolators SCR Output T h e se d e v ic e s co n sist o f galliu m -arsen id e infrared em itting d iod e optically co up led to a p ho to se n sitive silic on controlled rectifier SCR . T h e y are d e sig n e d for ap p lications

Contextual Info: 3875081 G E SOLID STATE 01E 19682 Optoelectronic S p ecificatio n s-r- y / - ? 7 HARRIS SEMICOND SECTOR 37E D 4302271 0027144 T B IH A S s w a o i 1- Photon Coupled Isolator 4 N 3 9 ,4 N 4 0 A a c E F H J K M N P R S Ga As Infrared E m itting D iode & L ight A ctivated SCR

Contextual Info: 3875081 G E SO LID STATE 01E 19718 Optoelectronic Specifications- • 37E D HARRIS SEtllCOND SECTOR 4305271 0027100 3 M HAS Photon Coupled Isolator H11C4 »H11C5, H11C6 V /' 1 IN C H ES M IL L IM E T E R S *• SY M 30L' M IN . M A X . • M IN.

Contextual Info: European “Pro Electron” Registered T y p e s _ CNY30, CNY34 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR T h e CNY30 a n d CNY34 consist o f a gallium arsen id e, in fra re d em itting d io d e coupled with a light activated silicon

led phototransistor pair

Abstract: toco Phototransistor til 81
Contextual Info: î] E2P0007-27-31 PHO TOCO UPLERS PRO DU CT OVERVIEW PHOTOCOUPLERS APPLICATION NOTES 1. GENERAL DESCRIPTIO N B y coupling a light emitting element and a light sensing element, a single-function element: can be created. The functional element thus produced is called a photocoupler, photointerrupter or sensor

Contextual Info: SPDG_Cover_0511 v7.qxp 6/22/2011 12:25 PM Page 2 Thermally Conductive Interface Materials for Cooling Electronic Assemblies Sil-Pad S E L E C T I O N G U I D E SPDG_Cover_0511 v7.qxp 6/22/2011 12:25 PM Page 3 June 2011 All statements, technical information and recommendations herein are based on tests we believe to be reliable, and THE