Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    GHZ MICRO-X CERAMIC PACKAGE Search Results

    GHZ MICRO-X CERAMIC PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMPM3HMFYAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HPFYADFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP128-1420-0.50-001 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HLFYAUG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation

    GHZ MICRO-X CERAMIC PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    rf microwave amplifier with S Parameters

    Abstract: BA2 capacitor BA11 02238
    Text: BIPOLARICS, INC. Part Number BA2 CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER PRODUCT SPECIFICATION FEATURES: • Wide 3dB bandwidth - DC to 2.7 GHz in ceramic Micro-X - DC to 2.6 GHz in plastic packages • Suitable for 7V systems


    Original     		PDF

    ba7 transistor

    Abstract: MMIC Amplifier Micro-X Bipolarics BA11 sot-143 rf amplifier
    Text: BIPOLARICS, INC. Part Number BA7 CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER PRODUCT SPECIFICATION FEATURES: • Wide 3dB bandwidth - DC to 2.4 GHz in ceramic Micro-X - DC to 2.0 GHz in plastic packages • Suitable for 5V systems


    Original     		PDF OT-143 OT-143J ba7 transistor MMIC Amplifier Micro-X Bipolarics BA11 sot-143 rf amplifier

    MMIC Amplifier Micro-X

    Abstract: GHZ micro-X Package BA11 rf microwave amplifier with S Parameters 03-198
    Text: BIPOLARICS, INC. Part Number BA3 CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER PRODUCT SPECIFICATION FEATURES: • Wide 3dB bandwidth - DC to 2.7 GHz in ceramic Micro-X - DC to 2.6 GHz in plastic packages • Suitable for 7V systems


    Original     		PDF

    BA4 amplifier

    Abstract: ba4 RF amplifier
    Text: BIPOLARICS, INC. Part Number BA4 CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER PRODUCT SPECIFICATION FEATURES: • Wide 3dB bandwidth - DC to 3.8 GHz in ceramic Micro-X - DC to 3.6 GHz in plastic packages • Suitable for 7V systems


    Original     		PDF

    pt 5767 Rf transistor

    Abstract: TC2182 7686 8962 TC1102 C9060 08424
    Text: TRANSCOM TC2182 January 2002 Low Noise Ceramic Packaged PHEMT GaAs FETs FEATURES • • • • • PHOTO ENLARGEMENT 0.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 13 dB Typical at 12 GHz Lg = 0.25 µm, Wg = 160 µm 100 % DC Tested Micro-X Metal Ceramic Package


    Original     		PDF TC2182 TC2182 TC1102 pt 5767 Rf transistor 7686 8962 C9060 08424

    RF TRANSISTOR NPN MICRO-X

    Abstract: HXTR-5103 microwave amplifier
    Text: HXTR 5103 NPN SILICON RF TRANSISTOR DESCRIPTION: The HXTR 5103 is a Common Emitter Device Designed for Class A Microwave Amplifier Applications up to 4.0 GHz. PACKAGE STYLE 85 MIL CERAMIC MICRO-X FEATURES INCLUDE: • High Gain • Gold Metallization • Emitter Ballasting


    Original     		PDF

    NE350184C

    Abstract: NE350184C-T1A-A rogers 5880 rt/duroid 5880 17802A GA-13 HS350 NE350184C-T1 NE350184C-T1A k-band amplifier
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE350184C K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • Micro-X ceramic 84C package APPLICATIONS


    Original     		PDF NE350184C NE350184C-T1 NE350184C-T1-A NE350184C-T1A NE350184C-T1A-A NE350anty NE350184C NE350184C-T1A-A rogers 5880 rt/duroid 5880 17802A GA-13 HS350 NE350184C-T1 NE350184C-T1A k-band amplifier

    NE350184C

    Abstract: NE350184C-T1A ne350184c-t1-a ne350184c-t1a-a NEC Ga FET marking L HS350 NE350184C-T1 k-band amplifier
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE350184C K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • Micro-X ceramic 84C package APPLICATIONS


    Original     		PDF NE350184C NE350184C-T1 NE350184C-T1-A NE350184C-T1A NE350184C-T1A-A NE350184C NE350184C-T1A ne350184c-t1-a ne350184c-t1a-a NEC Ga FET marking L HS350 NE350184C-T1 k-band amplifier

    mga64135

    Abstract: 1 to 3 GHz bandpass filter wide band rfc 33 gaas fet micro-X Package Transistor 35 MICRO-X 64135 MGA-641 31883
    Text: MGA-64135 GaAs MMIC Application Note G003 Introduction The Hewlett-Packard MGA-64135 GaAs MMIC is a 50 Ω -matched gain block providing broadband operation from 1 to 10 GHz, with performance guaranteed from 2 to 6 GHz. It is housed in an inexpensive metal-ceramic 0.085-inch micro-X surface-mountcompatible package, and requires only a single-polarity power supply.


    Original     		PDF MGA-64135 085-inch 5091-7468E 5967-5922E mga64135 1 to 3 GHz bandpass filter wide band rfc 33 gaas fet micro-X Package Transistor 35 MICRO-X 64135 MGA-641 31883

    2.4 ghz transmitter radio controlled for toys

    Abstract: marking asa nRF2402G nRF24* Nordic Semiconductor 2.4 ghz transmitter 2.4 ghz transmitter radio controlled with seven JEDEC tray standard 490 4x4 QFN Nordic Self start N-7075 nRF2402
    Text: PRODUCT SPECIFICATION nRF2402 Single chip 2.4 GHz Transmitter FEATURES APPLICATIONS • • True single chip GFSK transmitter in a small 16-pin package QFN16 4x4 • Adjustable output power up to 0dBm • Data rate 0 to 1Mbps • Low Bill of Material • Multi Channel operation


    Original     		PDF nRF2402 16-pin QFN16 N-7075 nRF2402 2.4 ghz transmitter radio controlled for toys marking asa nRF2402G nRF24* Nordic Semiconductor 2.4 ghz transmitter 2.4 ghz transmitter radio controlled with seven JEDEC tray standard 490 4x4 QFN Nordic Self start

    JEDEC tray standard 490 4x4 QFN

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATION nRF2402 Single chip 2.4 GHz Transmitter FEATURES APPLICATIONS True single chip GFSK transmitter in a small 16-pin package QFN16 4x4 • Adjustable output power up to 0dBm • Data rate 0 to 1Mbps • Low Bill of Material • Multi Channel operation


    Original     		PDF nRF2402 16-pin QFN16 communication02 N-7075 nRF2402 JEDEC tray standard 490 4x4 QFN

    2.4 ghz transmitter radio controlled for toys

    Abstract: datasheet for 4x4 keyboard 2 pin crystal oscillator 20mhZ 2.4 ghz transmitter 2.4 ghz transmitter rf test 4.20 mA Transmitter CRYSTAL SMD 8MHZ NRF2402 4x4 keyboard amplifier QFN16
    Text: PRODUCT SPECIFICATION Single chip 2.4 GHz Transmitter nRF2402 FEATURES APPLICATIONS • • True single chip GFSK transmitter in a small 16-pin package QFN16 4x4 • Adjustable output power up to 0dBm • Data rate 0 to 1Mbps • Low Bill of Material • Multi Channel operation


    Original     		PDF nRF2402 16-pin QFN16 N-7075 nRF2402 2.4 ghz transmitter radio controlled for toys datasheet for 4x4 keyboard 2 pin crystal oscillator 20mhZ 2.4 ghz transmitter 2.4 ghz transmitter rf test 4.20 mA Transmitter CRYSTAL SMD 8MHZ 4x4 keyboard amplifier QFN16

    NRF2402G

    Abstract: how to make 2.4 GHz radio controller N-7075 nRF2402 RF2402 Crystal 32 MHz 12 pF 2.4 ghz transmitter radio controlled with seven QFN16 4x4 When using a micro controller to drive the crystal 2.4 GHZ 8 channel RF transmitter and Receiver
    Text: PRODUCT SPECIFICATION nRF2402 nRF2402G Single chip 2.4 GHz Transmitter FEATURES APPLICATIONS • • True single chip GFSK transmitter in a small 16-pin package QFN16 4x4 • Adjustable output power up to 0dBm • Data rate 0 to 1Mbps • Low Bill of Material


    Original     		PDF nRF2402 nRF2402G 16-pin QFN16 N-7075 nRF2402/nRF2402G how to make 2.4 GHz radio controller nRF2402 RF2402 Crystal 32 MHz 12 pF 2.4 ghz transmitter radio controlled with seven QFN16 4x4 When using a micro controller to drive the crystal 2.4 GHZ 8 channel RF transmitter and Receiver

    socket AM2

    Abstract: AM2 31117 AM2 Processor Functional Data Sheet socket 940 pin package AM2 Processor Functional Socket am2 Processor Functional 31117 amd publication 31117 socket 940 am2 pin Processor model 2006
    Text: AMD Opteron Processor Product Data Sheet • Compatible with Existing 32-Bit Code Base 940-Pin Package Specific Features – Including support for SSE, SSE2, SSE3*, MMX™, 3DNow!™ technology and legacy x86 instructions • Refer to the AMD Functional Data Sheet,


    Original     		PDF 32-Bit 940-Pin 940-pin AMD64 64-bit 48-bit 40-bit socket AM2 AM2 31117 AM2 Processor Functional Data Sheet socket 940 pin package AM2 Processor Functional Socket am2 Processor Functional 31117 amd publication 31117 socket 940 am2 pin Processor model 2006

    SUF-5033

    Abstract: suf 5033
    Text: SUF-5033 SUF-5033Low Noise, High Gain SiGe HBT 0.1 GHZ TO 4.0 GHZ, CASCADABLE PHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3 mm x 3 mm Product Description Features The SUF-5033 is a monolithically matched broadband high IP3 gain block covering 0.1 GHz to 4.0 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from a single 5 V supply. It


    Original     		PDF SUF-5033 SUF-5033Low 16-Pin, SUF-5033 DS090605 16-Pin SUF-5033PCBA-410 suf 5033

    SUF-8533

    Abstract: gp bjt
    Text: SUF-8533DC to 12 GHz, Cascadable pHEMT MMIC Amplifier SUF-8533 Preliminary DC to 12 GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3 mm x 3 mm Product Description Features RFMD’s SUF-8533 is a monolithically matched high IP3 broadband pHEMT MMIC amplifier covering DC to 12 GHz. This pHEMT FET based amplifier


    Original     		PDF SUF-8533DC SUF-8533 16-Pin, SUF-8533 EDS-106168 SUF-8533PCBA-410 gp bjt

    SiGe HBT GAIN BLOCK MMIC AMPLIFIER

    Abstract: tl 271 inp hemt low noise amplifier
    Text: SUF-1033 SUF-1033DC to 20 GHz, Cascadable pHEMT MMIC Amplifier DC to 20 GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3 mm x 3 mm Product Description Features The SUF-1033 is a monolithically matched broadband high IP3 gain block covering DC to 20 GHz. This pHEMT based amplifier uses a patented selfbias network that operates from a single 5 V supply. It offers efficient cascadable performance in a compact 3 mm x 3 mm Ceramic QFN package. It


    Original     		PDF SUF-1033 SUF-1033DC 16-Pin, SUF-1033 DS090528 SiGe HBT GAIN BLOCK MMIC AMPLIFIER tl 271 inp hemt low noise amplifier

    nRF2401A application note

    Abstract: NRF2401AG marking asa NORDICSEMI NRF2401AG D135 D143 N-7075 nRF2401A NRF2401A-EVKIT nRF2402
    Text: PRODUCT SPECIFICATION nRF2401A Single chip 2.4 GHz Transceiver FEATURES APPLICATIONS • • • • • • • • • • • • • • • True single chip GFSK transceiver in a small 24-pin package QFN24 5x5mm Data rate 0 to1Mbps Only 2 external components


    Original     		PDF nRF2401A 24-pin QFN24 N-7075 nRF2401A application note NRF2401AG marking asa NORDICSEMI NRF2401AG D135 D143 NRF2401A-EVKIT nRF2402

    ATF13136

    Abstract: No abstract text available
    Text: ATF-13136 2-16 GHz Low Noise Gallium Arsenide FET WKS% LETT miXM HEW PACKARD 36 micro-X Package1 Features Low Noise Figure: 1.2 dB typical at 12 GHz High Associated Gain: 9.5 dB typical at 12 GHz High Output Power: 17.5 dBm typical Pi dB at 12 GHz Cost Effective Ceramic Microstrip Package


    OCR Scan     		PDF ATF-13136 ATF13136

    Untitled

    Abstract: No abstract text available
    Text: ATF-26836 2-16 GHz General Purpose Gallium Arsenide FET Wtinl H E W L E T T W!kM P A C K A R D 36 micro-X Package1 Features High îm a x : 60 GHz typical High Output Power: 18.0 dBm typical Pi <jb at 12 GHz High Gain: 9.0 dB typical Gss at 12 GHz Cost Effective Ceramic Microstrip Package


    OCR Scan     		PDF ATF-26836

    Untitled

    Abstract: No abstract text available
    Text: Features 35 micro-X Package1 Cascadable 50 LI Gain Block • Low Operating Voltage 3.5 V typical Vd • 3 dB Bandwidth: DC to 0.9 GHz • High Gain: 19.0 dB typical at 0.5 GHz • Low Noise Figure: 2.8 dB typical at 0.5 GHz • Cost Effective Ceramic Microstrip Package


    OCR Scan     		PDF MSA-0635, H447564 MSA-0635

    avantek

    Abstract: micro-x 64135 Avantek amplifier 167 MGA-64135 Avantek rf amplifier
    Text: MG A-64135 2-6 GHz Cascadable GaAs MMIC Amplifier avantek Avantek 35 Micro-X Package Features • • • • Cascadable 50 Ci Gain Block Broadband Performance: 2-6 GHz 12.0dB typical Gain ± 0.8 dB Gain Flatness 12.0 dBm Pi dB Single Supply Bias Cost Effective Ceramic Microstrip Package


    OCR Scan     		PDF MGA-64135 avantek micro-x 64135 Avantek amplifier 167 Avantek rf amplifier

    A08 monolithic amplifier MMIC MAR-8

    Abstract: No abstract text available
    Text: O MG A-64135 2-6 GHz Cascadable GaAs MMIC Amplifier avkntek Avantek 35 Micro-X Package Features • • • • Cascadable 50 Cl Gain Block Broadband Performance: 2-6 GHz 12.0 dB typical Gain ± 0.8 dB Gain Flatness 12.0 dBm Pi dB Single Supply Bias Cost Effective Ceramic M icrostrip Package


    OCR Scan     		PDF MGA-64135 310-37t-8717or31 0-37l-8478 A08 monolithic amplifier MMIC MAR-8

    MA4T64500

    Abstract: 4558 MA4T64535 557 sot143 micro X
    Text: Silicon Low Noise Transistors Silicon Bipolar High fT Low Noise Microwave Transistors M A 4T64500 Series Features • fT to 9 GHz MA4T64535 Micro-X Low Noise Figure I •High Associated Gain ■Hermetic and Surface Mount Packages Available + ■Can be Screened to JANTX, JANTXV


    OCR Scan     		PDF 4T64500 MA4T64533 MA4T64535 OT-23 MA4T64539 OT-143 MA4T645XX OT-143) MA4T64500 4558 MA4T64535 557 sot143 micro X