PTB 00 ATEX 3117
Abstract: CEAG PTB 00 ATEX 3117 ceag ghg atex ceag ghg 411 ceag ghg 412 GHG 412 PTB 99 ATEX CEAG P413 CEAG PTB 00 ATEX 1040 ATEX 3117
Text: Betriebsanleitung Explosionsgeschützte Steuergeräte GHG 411 und GHG 412 Operating instructions Explosion-protected control units GHG 411 and GHG 412 Mode d’emploi Boites de commande GHG 411 et GHG 412 pour atmosphères explosives GHG 410 7001 P0001 D/E/F I
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P0001
PTB 00 ATEX 3117
CEAG PTB 00 ATEX 3117
ceag ghg atex
ceag ghg 411
ceag ghg 412
GHG 412
PTB 99 ATEX
CEAG P413
CEAG PTB 00 ATEX 1040
ATEX 3117
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ceag ghg 122 3121
Abstract: ceag ghg 534 ceag ghg 534 2506 crouse-hinds GHG 960 663 B0708 CEAG PTB 00 ATEX 3108 ceag ghg 412 ceag ghg 543 ceag GHG 543 2306 Ex-92
Text: C A T A L O G U E E X P L O S I O N P R O T E C T E D 3 1 0 P R O D U C T S The CEAG Sicherheitstechnik GmbH factory in Eberbach, Germany The CEAG Nortem SA Barcelona, Spain The factory in Sheerness, UK CEAG SICHERHEITSTECHNIK GMBH Essentials, Innovations and a few words about your money
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ambitious531
03/SL
D-69412
ceag ghg 122 3121
ceag ghg 534
ceag ghg 534 2506
crouse-hinds GHG 960 663
B0708
CEAG PTB 00 ATEX 3108
ceag ghg 412
ceag ghg 543
ceag GHG 543 2306
Ex-92
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marking code SM diode
Abstract: GGP DIODE marking SM 98 GGT DIODE GHM DIODE j78 transistor marking CODE J36 diode GGT DIODE ON GGR diode ggk diode
Text: SURFACE MOUNT TVS DIODE Electrical Characteristics, 33 to 170 Volts TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Part Peak Voltage Clamping Current & Leakage Number Reverse VBR @ IT Voltage
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J130A
J150A
J160A
J170A
C5DB03
marking code SM diode
GGP DIODE
marking SM 98
GGT DIODE
GHM DIODE
j78 transistor
marking CODE J36 diode
GGT DIODE ON
GGR diode
ggk diode
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marking code SM diode
Abstract: GGR diode marking SM 98 GGT DIODE marking CODE J36 diode GGP DIODE marking code GGt GGT DIODE ON sm 58 b marking code SM CM
Text: SURFACE MOUNT TVS DIODE Electrical Characteristics, 33 to 170 Volts TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Part Peak Voltage Clamping Current & Leakage Number Reverse VBR @ IT Voltage
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J130A
J150A
J160A
J170A
C5DB03
marking code SM diode
GGR diode
marking SM 98
GGT DIODE
marking CODE J36 diode
GGP DIODE
marking code GGt
GGT DIODE ON
sm 58 b
marking code SM CM
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Untitled
Abstract: No abstract text available
Text: SKM 100GB176D Absolute Maximum Ratings Symbol Conditions IGBT 789, .O 2 MG N8 D8 .O 2 QGJ N8 D8TU .03+ 2 MGN8A * 5(+ %41(/<-+( +=(0-?-(F SEMITRANS 2 Trench IGBT Modules QHJJ 7 QMG E .0 2 RJ N8 SJ E QGJ E W MJ 7 QJ [+ .0 2 MG N8 QJJ E .0 2 RJ N8 HJ E QGJ
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100GB176D
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Untitled
Abstract: No abstract text available
Text: SKM 75GB176D Absolute Maximum Ratings Symbol Conditions IGBT 789, .O 2 MG N8 D8 .O 2 QGJ N8 D8ST .03+ 2 MGN8A * 5(+ %41(/<-+( +=(0-?-(F SEMITRANS 2 Trench IGBT Modules QHJJ 7 RJ E .0 2 RJ N8 GG E QJJ E V MJ 7 QJ Z+ .0 2 MG N8 RJ E .0 2 RJ N8 GG E QJJ E
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75GB176D
11Typ.
12Typ.
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EZ 532
Abstract: No abstract text available
Text: SKM 400GB176D Absolute Maximum Ratings Symbol Conditions IGBT 789, .P 2 NG O8 D8 .P 2 RGJ O8 .03+ 2 NGO8A * 5(+ %41(/<-+( +=(0-?-(F RHJJ 7 STJ E .0 2 UJ O8 TRJ E BJJ E Y NJ 7 RJ ]+ .0 2 NG O8 SSJ E .0 2 UJ O8 TJJ E BJJ E .P 2 RGJ O8 NNJJ E .03+( 2 NG O8
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400GB176D
EZ 532
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O41 DIODE
Abstract: No abstract text available
Text: SKM 145GB176D Absolute Maximum Ratings Symbol Conditions IGBT 789, .T 2 RG S8 D8 .T 2 VGJ S8 .03+ 2 RGS8A * 5(+ %41(/<-+( +=(0-?-(F VHJJ 7 VBJ E .03+( 2 WJ S8 VRJ E RJJ E Y RJ 7 VJ ]+ .03+( 2 RG S8 V_J E .03+( 2 WJ S8 VJJ E RJJ E .T 2 VGJ S8 V_JJ E .03+( 2 RG S8
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145GB176D
O41 DIODE
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EZ 532
Abstract: No abstract text available
Text: SKM 400GB176D Absolute Maximum Ratings Symbol Conditions IGBT 789, .P 2 NG O8 D8 .P 2 RGJ O8 .03+ 2 NGO8A * 5(+ %41(/<-+( +=(0-?-(F RHJJ 7 STJ E .0 2 UJ O8 TRJ E BJJ E Y NJ 7 RJ ]+ .0 2 NG O8 SSJ E .0 2 UJ O8 TJJ E BJJ E .P 2 RGJ O8 NNJJ E .03+( 2 NG O8
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400GB176D
EZ 532
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w4 DIODE
Abstract: No abstract text available
Text: SKM 600GA176D Absolute Maximum Ratings Symbol Conditions IGBT 789, .R 2 QG P8 D8 .R 2 OGK P8 D8VW .03+ 2 QGP8A * 5(+ %41(/<-+( +=(0-?-(F Trench IGBT Modules SKM 600GA176D 4=+0 OHKK 7 BBK E .0 2 TK P8 UHK E TKK E Y QK 7 OK ¥+ .0 2 QG P8 BKK E .0 2 TK P8
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600GA176D
w4 DIODE
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bu 3 GDG 125
Abstract: marking CODE smb J36 diode 13.8 8w zener diode DO-214A sma marking sm RG DO-214AA smj58 24 DO-214A bu 450 GDF diode gde 61 81g diode
Text: SURFACE MOUNT Transient Voltage Suppressor TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage
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C398BB02
C398BB03
bu 3 GDG 125
marking CODE smb J36 diode
13.8 8w zener diode
DO-214A sma
marking sm RG DO-214AA
smj58
24 DO-214A
bu 450 GDF
diode gde 61
81g diode
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marking code SM diode
Abstract: GGV diode GGT DIODE marking SM 98 tvs diode sma nu GHM 25 DIODE GHM DIODE ph 41 zener diode ggr 86 176/Diode Zener C 47 pH
Text: SURFACE MOUNT TVS & Zener Diodes TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage
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DO-214AC
C3B05
marking code SM diode
GGV diode
GGT DIODE
marking SM 98
tvs diode sma nu
GHM 25 DIODE
GHM DIODE
ph 41 zener diode
ggr 86
176/Diode Zener C 47 pH
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bfm 2 TERMINAL DIODE
Abstract: Diode BFX 514 GFX DIODE Diode GFK diode gde 78 Gex DIODE Diode GFK 42 on 440 gex diode GEZ DIODES GFK 77
Text: Silicon Avalanche Diodes 1500W Surface Mount Transient Voltage Supressors RoHS SMCJ Series FEATURES • RoHS compliant • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction
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ph 41 zener diode
Abstract: J150A 13.8 8w zener diode GHM DIODE marking code SM diode Diode GHM GGR diode sg 82 do-214aB marking ghm J78A
Text: SURFACE MOUNT TVS & Zener Diodes TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage
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DO-214AC
C3B05
ph 41 zener diode
J150A
13.8 8w zener diode
GHM DIODE
marking code SM diode
Diode GHM
GGR diode
sg 82 do-214aB
marking ghm
J78A
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bu 450 GDF
Abstract: diode gde 78 J15A GEZ DIODE SMA marking code LG GGG 92 marking sm J11A J14A J16A
Text: SURFACE MOUNT Transient Voltage Suppressor TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage
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C3B04
bu 450 GDF
diode gde 78
J15A
GEZ DIODE
SMA marking code LG
GGG 92
marking sm
J11A
J14A
J16A
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BFM LF
Abstract: SMCJ12A vishay vishay smcj GENERAL SEMICONDUCTOR MARKING bfm SMCJ5.0A
Text: SMCJ5.0A thru SMCJ188CA www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional
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SMCJ188CA
DO-214AB
J-STD-020,
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
BFM LF
SMCJ12A vishay
vishay smcj
GENERAL SEMICONDUCTOR MARKING bfm
SMCJ5.0A
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general semiconductor marking code GFX
Abstract: GENERAL SEMICONDUCTOR MARKING bfm SMCG188A GENERAL SEMICONDUCTOR MARKING gfr E1367 GDM 3-17 BFM LF gfx 83 SMCG14A general semiconductor marking code GER
Text: SMCG5.0A thru SMCG188CA www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Supressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional
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SMCG188CA
DO-215AB
J-STD-020,
2002/95/EC
2002/96/EC
11-Mar-11
general semiconductor marking code GFX
GENERAL SEMICONDUCTOR MARKING bfm
SMCG188A
GENERAL SEMICONDUCTOR MARKING gfr
E1367
GDM 3-17
BFM LF
gfx 83
SMCG14A
general semiconductor marking code GER
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GEK DIODES
Abstract: Diode GFK Diode BFX 514 GEZ DIODES BDP 282 DIODE BFM DIODE BFT marking code GGP DIODE MARKING GEK GFX DIODE
Text: Silicon Avalanche Diodes 1500W Surface Mount Transient Voltage Supressors RoHS SMCJ Series FEATURES • RoHS compliant • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction
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DO-214AB
GEK DIODES
Diode GFK
Diode BFX 514
GEZ DIODES
BDP 282
DIODE BFM
DIODE BFT marking code
GGP DIODE
MARKING GEK
GFX DIODE
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Diode GFK
Abstract: GFX DIODE BJE 80 diode Diode BFM bfm 2 TERMINAL DIODE GGT DIODE Diode GEG Diode GFK 42 bem diode GEZ DIODES
Text: Silicon Avalanche Diodes 1500W Surface Mount Transient Voltage Supressors RoHS SMCJ Series FEATURES • RoHS compliant • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction
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DO-214AB
Diode GFK
GFX DIODE
BJE 80 diode
Diode BFM
bfm 2 TERMINAL DIODE
GGT DIODE
Diode GEG
Diode GFK 42
bem diode
GEZ DIODES
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GENERAL SEMICONDUCTOR SMCJ43A
Abstract: ghk general semiconductor BFM LF SMCJ5.0A
Text: SMCJ5.0A thru SMCJ188CA www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional
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SMCJ188CA
DO-214AB
J-STD-020,
2002/95/EC
2002/96/EC
11-Mar-11
GENERAL SEMICONDUCTOR SMCJ43A
ghk general semiconductor
BFM LF
SMCJ5.0A
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Untitled
Abstract: No abstract text available
Text: SMCG5.0A thru SMCG188CA www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • • • • • • • • Low profile package Ideal for automated placement Glass passivated chip junction Available in uni-directional and bi-directional
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SMCG188CA
J-STD-020,
AEC-Q101
DO-215AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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GEZ DIODES
Abstract: GEZ 63 DIODES GEZ 304 DIODES
Text: TVS DIODES 1.5SMCJ Series — 1500 Watt Surface Mount 1.5SMCJ Series Features • 1500 watt peak pulse power dissipation • Available in voltages from 5.0V to 170V • Unidirectional and bidirectional • Glass passivated junction • Low clamping factor
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E135015
RS-481-A
DO214AB
UL94V-0
5SMCJ160
5SMCJ160A
5SMCJ170
5SMCJ170A
GEZ DIODES
GEZ 63 DIODES
GEZ 304 DIODES
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Untitled
Abstract: No abstract text available
Text: MIC631/32/33 and MIC641/42/43 S rn r _ 'l—- l GlÉjM •-j Ü K G J lP L JM jjw j |l^ KÜi f P j| ^ f ijB n J Step-Up Switching Regulators g g |j|ghg j|i|fl| General Description The MIC631/641, MIC632/642, and MIC633/643 are fixed frequency, hysteretic-mode, step-up boost regulators.
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OCR Scan
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MIC631/32/33
MIC641/42/43
MIC631/641,
MIC632/642,
MIC633/643
50kHz,
MIC63x
150mW)
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M109
Abstract: No abstract text available
Text: ¡gHg illlil • I M-109 & M-122 t t e lM M H z i +7 dBm/Higit P M fsnlftion/OPL Vmhm/TS-5 PRINCIPAL SPECIFICATIONS RF/LO Frequency, MHz IF Frequency, MHz M-109 1 -500 DC - 500 7.0 8.5 5 -2 0 0 1 -500 40 25 1 -50 50 - 500 30 18 1 -50 50 - 500 M-122 5 -1 00 0
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M-109
M-122
M-109
M-122
MIL-M-28837
23Feb96
M109
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