GFE SMD DIODE Search Results

SMD marking code GEM

Abstract: bfm smd code marking GHM SMD BFE smd diode SMD bey SMD marking code bfk smd diode code Bek smd marking BHp bfg smd smd marking ggd
Contextual Info: SMD Transient Voltage Suppressor SMD Diodes Specialist TV15C5V0-G Thru TV15C171-G Working Peak Reverse Voltage: 5.0 -170 Volts Power Dissipation: 1500Watts RoHS Device Features -Ideally for surface mount applications. SMC/DO-214AB -Easy pick and place. -Plastic package has Underwriters Lab.

SMD marking code GEM

Abstract: bdl 494 BFE smd diode GHM SMD BHW MARKING CODE smd marking BHp 938 GFM smd code marking 777 BEV smd MARKING smd marking ggd
Contextual Info: SMD Transient Voltage Suppressor SMD Diodes Specialist TV15C5V0-G Thru. TV15C441-G Working Peak Reverse Voltage: 5.0 - 440 Volts Power Dissipation: 1500Watts RoHS Device Features -Ideally for surface mount applications. SMC/DO-214AB -Easy pick and place. -Plastic package has Underwriters Lab.

BHN* marking smc

Contextual Info: SMD Transient Voltage Suppressor SMD Diodes Specialist TV15C5V0-HF Thru. TV15C441-HF Working Peak Reverse Voltage: 5.0 - 440 Volts Power Dissipation: 1500Watts RoHS Device Halogen free Features -Glass passivated chip. -1500 W peak pulse power capability with a

SMD marking code GEM

Abstract: bfm smd code marking BEV smd MARKING bdp 286 SMD marking code bfk SMD BHD D2 BFW 100A smd marking BJk BHD D2 SMD DEVICE smd marking BFX
Contextual Info: SMD Transient Voltage Suppressor SMD Diodes Specialist TV15C5V0-G Thru. TV15C441-G Working Peak Reverse Voltage: 5.0 - 440 Volts Power Dissipation: 1500Watts RoHS Device Features -Ideally for surface mount applications. SMC/DO-214AB -Easy pick and place. 0.280 7.02

Contextual Info: SMD Transient Voltage Suppressor SMD Diodes Specialist TV15C5V0-G Thru. TV15C441-G Working Peak Reverse Voltage: 5.0 - 440 Volts Power Dissipation: 1500Watts RoHS Device Features -Glass passivated chip. -1500 W peak pulse power capability with a 10/1000µs waveform, repetitive rate

BUK856-400IZ

Abstract: TP500
Contextual Info: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor Protected Logic-Level IGBT GENERAL DESCRIPTION Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope suitable for surface mount applications. It is intended for

Contextual Info: I Z II X Y S HiPerFAST IGBT with Diode V.CES IXGH 30N60BD1 IXGT 30N60BD1 600 60 1.8 C25 CE sat V A V 100 ns tfi(typ) Preliminary data sheet Maximum Ratings Symbol TestC onditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i

BUZ102

Abstract: smd transistor py
Contextual Info: SIEMENS BUZ 102 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dvfdt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vbs BUZ102 50 V b 42 A flbston Package Ordering Code

Contextual Info: SPD 07N20 In fin e o n technologies Preliminary Data SIPMOS Power Transistor Product Summary Features Drain-Source on-state resistance • Enhancement mode Continuous drain current • Avalanche rated V 200 Drain source voltage • N channel ^ D S o n

smd diode code b54

Abstract: smd transistor c015 BUZ101S E3045 Q67040-S4013-A2 smd code book 71ss TRANSISTOR SMD MARKING CODE c015 01333LA
Contextual Info: BUZ101S Infineon ta c h n ol o g ¡ u m p f ° v c d Ro8'°”’ SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance R0S on • Avalanche rated Continuous drain current

18p06p

Contextual Info: SPP 18P06P SPB 18P06P Infineon technologies Preliminary Data SIPMOS Small-Signal-T ransistor Features Product Summary • P Channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current

ultrafast igbt

Abstract: 50mt060ulstapbf GC smd diode 94540
Contextual Info: 50MT060ULSTAPbF Vishay High Power Products "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses

Contextual Info: 50MT060ULSTAPbF Vishay High Power Products "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse RoHS COMPLIANT • Very low conduction and switching losses

gFE smd diode

Abstract: 50MT060ULSTAPBF
Contextual Info: 50MT060ULSTAPbF Vishay High Power Products "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse RoHS COMPLIANT • Very low conduction and switching losses

Contextual Info: 05406 SMCJ5.0C & SMCJ36A Only One Name Means ProTek’Tion 1500 WATT TVS COMPONENT APPLICATIONS • Power Supply • AC/DC Applications • Telecom DO-214AB PACKAGE FEATURES MECHANICAL CHARACTERISTICS • Compatible with IEC 61000-4-2 ESD : Level 4 - Air 15kV, Contact 8kV

Contextual Info: 05406 SMCJ5.0C & SMCJ36A Only One Name Means ProTek’Tion 1500 WATT TVS COMPONENT APPLICATIONS • Power Supply • AC/DC Applications • Telecom DO-214AB PACKAGE FEATURES MECHANICAL CHARACTERISTICS • IEC Compatibility 61000-4-2 ESD • IEC Compatibility 61000-4-4 (EFT)

GC 72 smd diode

Contextual Info: 50MT060ULSTAPbF www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses

GC 72 smd diode

Contextual Info: 50MT060ULSTAPbF www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses

Contextual Info: 50MT060ULSTAPbF www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses

kd smd transistor

Abstract: smd transistor wc LG Philips LM 300 W 01
Contextual Info: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK866-400 IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION Protected N-channel logic-level Insulated gate bipolar power transistor In a plastic envelope

40MT120UHAPBF

Abstract: ultrafast igbt 40MT120UHAP
Contextual Info: 40MT120UHAPbF, 40MT120UHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP Ultrafast NPT IGBT , 80 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • Square RBSOA

40MT120UHAPBF

Abstract: 250 uH
Contextual Info: 40MT120UHAPbF/40MT120UHTAPbF Vishay High Power Products "Half-Bridge" IGBT MTP Ultrafast NPT IGBT , 80 A FEATURES • Ultrafast Non Punch Through (NPT) technology Pb-free • Positive VCE(on) temperature coefficient Available RoHS* • 10 µs short circuit capability

DIODE SMD GEM

Abstract: 232 GFP smd diode
Contextual Info: 05406 SMCJ SERIES Only One Name Means ProTek’Tion 1500 WATT TVS COMPONENT APPLICATIONS • Power Supply • AC/DC Applications • Telecom DO-214AB PACKAGE FEATURES MECHANICAL CHARACTERISTICS • UL File Recognition #E333727 • Compatible with IEC 61000-4-2 ESD : Level 4 - Air 15kV, Contact 8kV

10s100

Contextual Info: 40MT120UHAPbF, 40MT120UHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP Ultrafast NPT IGBT , 80 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • Square RBSOA