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    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC42V5258 5 .2 —5 .8G H z BAND 1 6W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F C 4 2 V 5 2 5 8 is an in te rn a lly im pedance m atched GaAs p o w e r F E T especially designed fo r use in 5 . 2 — 5 . 8 G H z band a m p lifie rs . T h e h e rm e tic a lly sealed m eta l-c e ram ic


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    GFC42V5258 PDF

    G25q

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC42VS258 5 . 2 - 5 . 8GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 2 V 5 2 5 8 is an internally impedance-matched GaAs power FE T especially designed fo r use in 5 .2 — 5 .8 GHz band amplifiers. The herm etically sealed metal-ceramic


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    GFC42VS258 G25q PDF