GFC36V5258 Search Results

GFC36V5258 Price and Stock

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Mitsubishi Electric MGFC36V525801 5.2-5.8 GHZ BAND 4W INTERNALLY MATCHED GAAS FET RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	MGFC36V525801		15			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mitsubishi Electric MGFC36V525851 RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	MGFC36V525851		4			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC36V5258 5 .2 ~ 5 .8 G H z BAND 4W INTERNALLY M ATCHED GaAs F E T DESCRIPTION The GFC36V5258 is an internally impedance-matched GaAs power FET especially designed fo r use in 5.2 ~ 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic	OCR Scan	GFC36V5258 MGFC36V5258	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 36V S 258 5 .2 —5 .8G H z BAND 4 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 6 V 5 2 5 8 is an internally impedance-matched GaAs power F E T especially designed for use in 5.2 ~ 5.8 G H z band amplifiers. The herm etically sealed metal-ceramic	OCR Scan		PDF