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Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> GF1425B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 2 5 B low -noise GaAs FET w ith an N -channel O U TLIN E DRAW ING Unit: m illim eters inches 4 M ÍN . (0 .1 5 7 M IN . ) 4 M IN . ( 0 .1 5 7 M IN .) S cho ttky gate is designed fo r use in Ku band am plifiers.	OCR Scan	MGF1425B MGF1425B GF1425B 12GHz	PDF

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Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> GF1425B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 2 5 B low -noise GaAs FET w ith an N -channel O U TLIN E DRAW ING Unit: m illim eters inches 4 M ÍN . (0 .1 5 7 M IN . ) 4 M IN . ( 0 .1 5 7 M IN .) S cho ttky gate is designed fo r use in Ku band am plifiers.

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MGF1425B MGF1425B GF1425B 12GHz

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