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    GERMANIUM VARACTOR DIODE Search Results

    GERMANIUM VARACTOR DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    GERMANIUM VARACTOR DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    hp5082-2810

    Abstract: YSI 44018 HP5082 2N3904 LM10 LT1034 varactor diode sample problems YSI-44018 Widlar 1N914
    Text: Application Note 15 November 1985 Circuitry for Single Cell Operation Jim Williams Portable, battery-powered operation of electronic apparatus has become increasingly desirable. Medical, remote data acquisition, power monitoring and other applications are good candidates for battery operation. In some circumstances, due to space, power or reliability considerations,


    Original     		PDF 1017/LT1018 600mV LT1017/LT1018 LT1004 LT1034 an15f AN15-8 hp5082-2810 YSI 44018 HP5082 2N3904 LM10 varactor diode sample problems YSI-44018 Widlar 1N914

    tunnel diode high frequency

    Abstract: diode tunnel transistor use in oscillator diode nomenclature DATASHEET TUNNEL DIODE photo thyristor thyristor regulator Low frequency power transistor oscillator tunnel diode transistor power
    Text: VISHAY Vishay Semiconductors Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. For example: B Material


    Original     		PDF OT323 OT343 07-Jan-03 tunnel diode high frequency diode tunnel transistor use in oscillator diode nomenclature DATASHEET TUNNEL DIODE photo thyristor thyristor regulator Low frequency power transistor oscillator tunnel diode transistor power

    GaAs tunnel diode

    Abstract: tunnel diode GaAs darlington transistor for audio power application photo thyristor diode tunnel DATASHEET TUNNEL DIODE Tunnel diode tunnel diode high frequency photocoupler Thyristor transistor power
    Text: Philips Semiconductors Pro Electron Type Numbering System General PRO ELECTRON TYPE NUMBERING SYSTEM U Basic type number W surface acoustic wave device This type designation code applies to discrete semiconductor devices not integrated circuits , multiples


    Original     		PDF

    6 pin TRANSISTOR SMD CODE 21

    Abstract: germanium diode smd 6 pin TRANSISTOR SMD CODE p SMD CODE y17 transistor smd z a smd transistor 5 lead R Y SMD TRANSISTOR BRT12H-X009T OPTOCOUPLER thyristor photo thyristor
    Text: VISHAY Vishay Semiconductors Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The type number of semiconductor devices consists of two letters followed by a serial number For example: C Material


    Original     		PDF 21-Oct-03 CNY17F-2X017T 4N35-X016 BRT12H-X009T 6 pin TRANSISTOR SMD CODE 21 germanium diode smd 6 pin TRANSISTOR SMD CODE p SMD CODE y17 transistor smd z a smd transistor 5 lead R Y SMD TRANSISTOR BRT12H-X009T OPTOCOUPLER thyristor photo thyristor

    BPW50

    Abstract: tda1000 BD232 PHILIPS SEMICONDUCTOR cqy17 Germanium Diode aa112 GaAs tunnel diode BD232 BPW50-9 74LS00A DIODE BZW70
    Text: Philips Semiconductors General Pro electron type numbering DISCRETE SEMICONDUCTORS U Basic type number W Surface acoustic wave device This type designation code applies to discrete semiconductor devices not integrated circuits , multiples of such devices, semiconductor chips and Darlington


    Original     		PDF PCF1105WP: GMB74LS00A-DC: 74LS00A; TDA1000P: SAC2000: BPW50 tda1000 BD232 PHILIPS SEMICONDUCTOR cqy17 Germanium Diode aa112 GaAs tunnel diode BD232 BPW50-9 74LS00A DIODE BZW70

    Conventions used in Presenting Technical Data

    Abstract: 80057 germanium diode smd R Y SMD TRANSISTOR smd dual transistor G 9 Optocoupler with thyristor OPTOCOUPLER thyristor 4N35-X016 optocoupler SFH615 datasheet suppressor diode smd
    Text: Conventions used in Presenting Technical Vishay Semiconductors Conventions used in Presenting Technical Data NOMENCLATURE FOR SEMICONDUCTOR DEVICES ACCORDING TO PRO ELECTRON The type number of semiconductor devices consists of two letters followed by a serial number.


    Original     		PDF 10-Sep-07 Conventions used in Presenting Technical Data 80057 germanium diode smd R Y SMD TRANSISTOR smd dual transistor G 9 Optocoupler with thyristor OPTOCOUPLER thyristor 4N35-X016 optocoupler SFH615 datasheet suppressor diode smd

    Infineon technology roadmap for mosfet

    Abstract: germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor
    Text: Small CHIPS for big visions Silicon Discretes www.infineon.com Never stop thinking. INTRODUCTION O n e o f t h e w o r l d ' s major manufacturers of radio frequency RF components, Infineon Technologies is committed to innovative technologies and products, flexible service and the very best supply conditions for customers and partners.


    Original     		PDF B191-H7496-G1-X-7600 Infineon technology roadmap for mosfet germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor

    zener 8v diode

    Abstract: Zener Diode high frequency applications varactor diode high frequency VARACTOR DIODE Zener Diode frequency "Varactor Diode" Varactor Diodes 1N34* diode varactor MILITARY DIODES
    Text: ~ 3074 ^ 7 4 EASTRON CORP ’ 7 4 4 7 4 0000155 5 | Q rjT J tj Eastron £ i MILITARY Co m m u n i c a t i o n DIODES EASTRON furnishes a broad range of diodes to meet specific military drwalngs for production and design applications: EIA or EASTRON TYPE #


    OCR Scan     		PDF Hl3074 1N3488 SMC374845 1N3550 S416324 1N3551* SMB416394* 1N3552* SMB416386* 1N3553 zener 8v diode Zener Diode high frequency applications varactor diode high frequency VARACTOR DIODE Zener Diode frequency "Varactor Diode" Varactor Diodes 1N34* diode varactor MILITARY DIODES

    zener 8v diode

    Abstract: Zener Diode high frequency applications varactor diode high frequency 1N3559 VARACTOR DIODE "Varactor Diode" D00D1SE Zener Diode frequency varactor Varactor Diodes
    Text: 3074^74 EASTRON CORP ~si 1 1^ 3074474 D00D1SE S | 0 T' ¿W'f^ Eastron MILITARY ÜOMMUNICATION DIODES EASTRON furnishes a broad range of diodes to meet specific military drwalngs for production and design applications : EIA or EASTRON TYPE # DESCRIPTION* MILITARY


    OCR Scan     		PDF 307Lm74 D00D1SE 1N3488 SMC374845 1N3550 S416324 1N3551* SMB416394* 1N3552* SMB416386* zener 8v diode Zener Diode high frequency applications varactor diode high frequency 1N3559 VARACTOR DIODE "Varactor Diode" Zener Diode frequency varactor Varactor Diodes

    YSI 44018

    Abstract: YSI-44018 hp5082-2810 0-10v ramp ic Germanium diode 0.2V varactor diode sample problems hp5082 1N4148 LM10 voltage reference IC LM10
    Text: ' LU IL/M<_ ! •' TECHNOLOGY Application Note 15 November 1985 Circuitry for Single Cell Operation Jim Williams Portable, battery powered operation of electronic appara­ tus has become increasingly desirable. Medical, remote data acquisition, power monitoring and other applications


    OCR Scan     		PDF LT1017/LT1018 600mV YSI 44018 YSI-44018 hp5082-2810 0-10v ramp ic Germanium diode 0.2V varactor diode sample problems hp5082 1N4148 LM10 voltage reference IC LM10

    1s188fm

    Abstract: 1S426 SVC321 1SS53 1S188-FM SVC201SP SVC321SP SVC201Y SVC202 SVC203
    Text: ♦ :Dnl t j j e 20 40~600 IV <35(9V) Plastic SVC321 388.1-459.1(1.2 V ) 20.30-27.05(8V) Plastic SVC321SP 388.1-459.1(1.2V) 20.30-27.05(8V) Plastic(SP) 399.7-516.8(1V ) 25.19-46.87(9V) Plastic 345.0-408.4(3V ) 18. 92-25. 61 (25V) Plastic SVC303Y AH Electronic


    OCR Scan     		PDF 1SS53T SVC303Y SVC321 SVC321SP SVC311 SVC333 SVC201Y SVC201SP SVC202* SVC203* 1s188fm 1S426 SVC321 1SS53 1S188-FM SVC201SP SVC321SP SVC201Y SVC202 SVC203

    DIODE BZW70

    Abstract: Germanium Diode aa112 cqy17 BPW50 BZY74-C6V3 BPW50-9 g1 smd transistor thyristor smd AA112 germanium diode smd
    Text: Philips Semiconductors General Pro electron type numbering DISCRETE SEMICONDUCTORS U Transistor; power, switching Basic type number W Surface acoustic wave device This type designation code applies to discrete semiconductor devices not integrated circuits , multiples


    OCR Scan     		PDF BZW10-15B. BYT-100 -100R. DIODE BZW70 Germanium Diode aa112 cqy17 BPW50 BZY74-C6V3 BPW50-9 g1 smd transistor thyristor smd AA112 germanium diode smd

    diode nomenclature

    Abstract: high frequency diode Low frequency power transistor "tunnel diode" oscillator "high frequency Diode"
    Text: Vishay Telefunken VI^UVY Nomenclature for Semiconductor Devices According to Pro Electron The type number of semiconductor devices consists of: Two letters followed by a serial number B For example: Material W20 P Serial number Function The first letter indicates the material used for the active


    OCR Scan     		PDF TLHR5401AS12. diode nomenclature high frequency diode Low frequency power transistor "tunnel diode" oscillator "high frequency Diode"

    9999 DIODE

    Abstract: high frequency diode Low frequency power transistor step recovery diode tunnel diode high frequency "high frequency Diode" diode tunnel transistor power audio
    Text: VISHAY Vishay Telefunken General Information Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron I The part number of a semiconductor device consists of two letters followed by a serial number.


    OCR Scan     		PDF

    transistor A 1013

    Abstract: high frequency diode Low frequency power transistor 9999 DIODE diode nomenclature "high frequency Diode"
    Text: Tem ic S e m i c o n d u c t o r s Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. For example: B


    OCR Scan     		PDF

    BYX38-600

    Abstract: germanium rectifier diode byx38 diode germanium varactor diode BYX38
    Text: TYPE DESIGNATION J^ PRO ELECTRON TYPE DESIGNATION CODE FOR SEMICONDUCTOR DEVICES This type designation code applies to discrete semiconductor devices — as opposed to integrated circuits — , multiples of such devices and semiconductor chips. "Although not all type numbers accord with the Pro Electron system, the following explanation is given


    OCR Scan     		PDF BYX38-600 BZY93-C7V5 BYX38 BZY93 germanium rectifier diode byx38 diode germanium varactor diode

    tda1000

    Abstract: TDA1000P 74LS00a Radiation Detector PCF1105 Germanium Diode aa112
    Text: Philips Semiconductors General Pro electron type numbering DISCRETE SEMICONDUCTORS U Basic type number W Surface acoustic wave device X This type designation code applies to discrete semiconductor devices not integrated circuits , multiples of such devices, semiconductor chips and Darlington


    OCR Scan     		PDF PCF1105WP: GMB74LS00A-DC; 74LS00A; TDA1000P: SAC2000: tda1000 TDA1000P 74LS00a Radiation Detector PCF1105 Germanium Diode aa112

    BPW50

    Abstract: tda1000 74LS00A
    Text: Philips Semiconductors General Pro electron type numbering DISCRETE SEMICONDUCTORS U Transistor; power, switching Basic type number W Surface acoustic wave device This type designation code applies to discrete semiconductor devices not integrated circuits , multiples


    OCR Scan     		PDF PCF1105WP: GMB74LS00A-DC: 74LS00A; TDA1000P: SAC2000: BPW50 tda1000 74LS00A

    tda1000

    Abstract: BPW50 Germanium Diode aa112 BD232 PHILIPS SEMICONDUCTOR cqy17 74LS00A BZW10-15 DIODE BZW70 BPW50-12 PCF1105WP
    Text: Philips Semiconductors General Pro electron type numbering DISCRETE SEMICONDUCTORS U Transistor; power, switching Basic type number W Surface acoustic wave device This type designation code applies to discrete semiconductor devices not integrated circuits , multiples


    OCR Scan     		PDF PCF1105WP: GMB74LS00A-DC: 74LS00A; TDA1000P: SAC2000: tda1000 BPW50 Germanium Diode aa112 BD232 PHILIPS SEMICONDUCTOR cqy17 74LS00A BZW10-15 DIODE BZW70 BPW50-12 PCF1105WP

    tda1000

    Abstract: 74LS00 20 PIN LEADLESS CHIP CARRIER THICK FILM smd dual diode code 1c
    Text: Philips Semiconductors General Pro electron type numbering DISCRETE SEMICONDUCTORS U Basic type number W Surface acoustic wave device This type designation code applies to discrete semiconductor devices not integrated circuits , multiples of such devices, semiconductor chips and Darlington


    OCR Scan     		PDF PCF1105WP: GMB74LS00A-DC; 74LS00A; TDA1000P: SAC2000: tda1000 74LS00 20 PIN LEADLESS CHIP CARRIER THICK FILM smd dual diode code 1c

    tda1000

    Abstract: 74LS00A BPW50 Germanium Diode aa112
    Text: Philips Semiconductors General Pro electron type numbering DISCRETE SEMICONDUCTORS U Basic type number W Surface acoustic wave device This type designation code applies to discrete semiconductor devices not integrated circuits , multiples of such devices, semiconductor chips and Darlington


    OCR Scan     		PDF PCF1105WP: GMB74LS00A-DC: 74LS00A; TDA1000P: SAC2000: tda1000 74LS00A BPW50 Germanium Diode aa112

    tba 450

    Abstract: dc46a GUNN DIODE plessey
    Text: GEC PLESSEY SENICONDS PACKAGED DETECTOR MODULES 43E D • 3?t.asaa oaisabi m ■ plsb 'X -o'i-o 'j DB3031 Germanium Backward Diode Detector Modules • • • • • • 0-1-18 GHz frequency range High sensitivity at zero bias High dynamic range > 4 5 d B


    OCR Scan     		PDF DB3031 17dBmf 1-18GHz tba 450 dc46a GUNN DIODE plessey

    lc 7252

    Abstract: MC68836
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C 1658 V o ltag e C ontrolled M u ltivib rato r The MC1658 is a voltage-controlled multivibrator which provides appropriate level shifting to produce an output compatible with MECL III and MECL 10,000 logic levels. Frequency control is accomplished


    OCR Scan     		PDF MC1658 16-Lead lc 7252 MC68836

    tda1000

    Abstract: Germanium Diode aa112 BPW50 PCF-1105WP 74LS00A PCF1105 BZW70 9v1 zener diode circuits
    Text: Philips Semiconductors Semiconductors for Telecom systems QUALITY General • acceptance tests on finished products to verify conformance with the device specification. The test results are used for quality feedback and corrective actions. The inspection and test requirements are


    OCR Scan     		PDF PCF1105WP: GMB74LS00A-DC: 74LS00A; TDA1000P: SAC2000: tda1000 Germanium Diode aa112 BPW50 PCF-1105WP 74LS00A PCF1105 BZW70 9v1 zener diode circuits