GERMANIUM TRANSISTOR AC 125 Search Results

2N1042

Abstract: 2N1043 2N1044 2N1045 Germanium power 3011 fe
Contextual Info: ê MJL-S-19500/137C 2l_Jung^9,n _ SUPERSEDING MIL-S-19500/137B 7 A p ril 1964 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PN P, GERMANIUM, POWER f\AC i irL O ft\fi r\An rrnti/MT/^ti m n u u u n Oxti ¿¿'iau?«; This specification Is m andatory fo r use by a ll D epart­

pnp germanium transistor

Abstract: germanium transistors PNP Germanium Transistors
Contextual Info: 520C Specifications Model 520C Industrial Transistor Tester IN-CIRCUIT TEST The B+K Precision model 520C Transistor Tester is designed for in-circuit and out-of circuit transistor testing with special features for making additional tests on devices out-of circuit.

rca transistor manual

Abstract: rca case outlines diode 1N539 2N301 2N140 transistor bf 175 rca thyristor manual drift-field 2N1637 transistor rca 2n173
Contextual Info: RCA Transistor Manual T h is book has been prepared to assist those who work or experiment with semi­ conductor devices and circuits. It will be useful to engineers, service technicians, edu­ cators, students, radio amateurs, hobbyists, and others technically interested in transis­

1671B

Abstract: 2N1671 scr firing 2N1671A 160 germanium transistor 2N 1671 1671C Germanium power 2N1671B MT53B256M32D1NP-062 AUT:C
Contextual Info: Germanium Power Devices Corp. SILICON UNIJUNCTION TRANSISTOR The| GPJ3 Unijunction Transistor is a three terminal device having a stable “N ” type negative resistance charac­ teristic over a wide temperature range. A stable peak point voltage, a low peak point

NKT677

Abstract: NKT612 ORP12 sft353 GEX34 1/equivalent transistor ac127 OC171 equivalent AD149 NKT275 ac128
Contextual Info: CONTENTS p ag e Mazda Range of Audio Transistors 2 Recommended Line-ups for Audio Amplifiers 3 Key to Symbols 4 Do’s and Dont’s 6 Device Data 7 European Nomenclature 34 Device Identification 35 Comparables List 47 Replacing Selenium Rectifiers 62 Replacing Valve Rectifiers

TI3030

Abstract: TI3029 kc-300 power supply TI-3029 TI3031 TI-3030 Germanium Transistor Texas Germanium Germanium power TI-3031
Contextual Info: TYPES TI3029, TI3030, TI3031 P-N-P ALLOY-JUNCTION GERMANIUM POWER TRANSISTORS JO SO “4 m c -< < r j SKB HIGH-POWER TRANSISTORS 3 id 3 %8 ro r > o 8 Ì m O r b CONSUMER APPLICATIONS s S 8 m echanical d ata siCO - > These transistors are in a resistance-welded, herm etically sealed enclosure. The mounting base provides

AC181

Abstract: AC161 AG151 AC16F Q60103-X151-D Q60103-X151-D1 Q60103-X151-E Q60103-X151-E1 Q60103-X151-F Q60103-X151-F1
Contextual Info: ESC D • û235bDS Q0Q403S ^ « S I E G 1 PNP Germanium Transistors AC 151 SIEMENS AKTIENGESELLSCHAF 9 04035- 2- A— 151T - Not for new design fo r AF input and driver stages o f m ediu m perform ance AC 151 and AC 151 r are alloyed germanium PNP transistors in 1A 3 DIN 41871 case

KJE transistor

Abstract: KJE 17 transistor NT 101 transistor AC151 AC151 transistor kje KJE ZO transistor ac 151 k 151 transistor Q60103-X151-F1
Contextual Info: 2SC D • fi235bQS 0004035 ISIE6 AC 151 AC 151 r PNP Germanium Transistors SIEMENS AKTIENGESELLSCHAF C 04035 T- 0 9 - U Not for new design for AF input and driver stages of medium performance AC 151 and AC 151 r are alloyed germanium PNP transistors in 1A 3 DIN 41871 case

transistor 152 M

Abstract: ac121 TRANSISTOR K 1507 siemens ac121 transistor 3403V AC121 germanium transistor transistor ac 127 transistor ac 152 ac127 Transistor 1507
Contextual Info: BSC D • 0235bG 5 0 Q 0 4 D 2 el 3 W Ê S IE 6 ’ / T ^ ? - / / PNP Germanium Transistors - S IE M E N S — A K T I E N 6 E S E L L S C H A F - A— 1 - 2 for AF, driver and output stages of medium performance

transistor ac 152

Abstract: AC1* germanium transistor transistor ac 127 AC121 transistor 152 M xl 1507 germanium transistor ac 125 OC 76 germanium transistor AC152 Q60103-F121
Contextual Info: ESC ]> • 023SbGS 000402^ 3 H S I E 6 ./ PNP Germanium Transistors A C 121 _ SIEMENS AKTIEN6ESELLSCHAF -— — fo r AF, driver and output stages o f m edium perform ance A C 121 and AC 152 are alloyed germanium PNP transistors in 1 A 3 DIN 41871 metal case

k 151 transistor

Abstract: transistor ac 151 AC161 AC151 transistor AC151 Q60103-X151-D Q60103-X151-D1 Q60103-X151-E Q60103-X151-F Q60103-X151-F1
Contextual Info: SSC T> m 0235bD5 0004035 ISI EG AC 151 AC 1 5 1 r PNP Germanium Transistors SIEMENS AKTIENúESELLSCHAF C 04035 T - 9 - / / Not for new design fo r AF inp u t and driver stages o f m e d iu m p erfo rm an ce AC 151 and AC 151 r are alloyed germanium PNP transistors in 1A 3 DIN 41871 case

kt420

Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
Contextual Info: Introduction This summary contains abridged information on the range of NKT semiconductor products, and the five main product groups are listed below. a HYBRID MICROCIRCUITS b) SILICON TRANSISTORS c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS

transistor c114

Abstract: C114 Transistor HA1319 for C114 transistor transistor c119 transistor c114 transistors R107 diode GERMANIUM SMALL SIGNAL TRANSISTORS GERMANIUM TRANSISTOR C109 capacitor
Contextual Info: H A I 3 1 9 AUDIO AM PLIFIER FOR TEPE RECORDER • FEATURES • No transformer required thanks to complementary output circuit • Excellent equalizer characteristics • Low-distortion recording even if volumeless because of AGC circuit wide dynamic range.

6 pin TRANSISTOR SMD CODE 21

Abstract: germanium diode smd 6 pin TRANSISTOR SMD CODE p SMD CODE y17 transistor smd z a smd transistor 5 lead R Y SMD TRANSISTOR BRT12H-X009T OPTOCOUPLER thyristor photo thyristor
Contextual Info: VISHAY Vishay Semiconductors Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The type number of semiconductor devices consists of two letters followed by a serial number For example: C Material

OC 74 germanium transistor

Abstract: OC 140 germanium transistor pnp germanium transistor UJ33 2N396A Germanium Transistor kc 2026 TRANSISTOR SUBSTITUTION MIL-S-1950P
Contextual Info: MLL-S-i95ÛÛ/64D 29 June 196? SU PER SED E MIL-S-19500/64C «I nuvemrer I_ ivo i iu See 6.2 M ILITARY SPECIFICATION SEMICONDUCTOR D EVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER T Y PE 2N39GA This specification is mandatory for use by all Depart* ments and Agencies of the Department of Defense.

car inverter theory

Abstract: baxandall chopper transformer winding formula sterling inverter diagrams 2N1552 2N3612 3 phase inverter 120 conduction mode theory 1961 motorola power transistor handbook 2N2527 12VOLT SCR DIAGRAMS
Contextual Info: AN-222 Application Note THE ABC’SOFDCTOAC Revised by amination inverters. .~{ of the entire Among the proper inverter tion; operating of inverters; field of dc to ac the topics discussed are; for a specific principlesof the problem applica- different selection in the design of inverters,

Contextual Info: BFP740FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2012-10-11 RF & Protection Devices Edition 2012-10-11 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.

Contextual Info: BFP720FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2012-10-16 RF & Protection Devices Edition 2012-10-16 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.

MARKING CODE T7s

Abstract: MARKINGCODET7s
Contextual Info: BFP740ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-08 RF & Protection Devices Edition 2012-10-08 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.

Contextual Info: BFP720ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-15 RF & Protection Devices Edition 2012-10-15 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.

Contextual Info: BFP640FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.

Contextual Info: BFP640ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-09-17 RF & Protection Devices Edition 2012-09-17 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.

80mAF

Abstract: 6069 marking
Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability

RBS 3000

Abstract: 1g28
Contextual Info: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT - Silicon Germanium technology