180NM cmos process parameters
Abstract: 180NM nmos Germanium audio Amplifier diagram "BJT Transistors" spice high frequency SiGe bicmos transistor circuit diagram for simple RF transceiver BJT Transistors CMOS Stacked RF 130NM cmos process parameters AUDIO MOSFET POWER AMPLIFIER SCHEMATIC
Text: Motivation for RF Integration W H I T E P A P E R Motivation for RF Integration Introduction While CMOS technology has made great strides in its ability to fabricate radio frequency RF circuitry, many RF chip designers have yet to take advantage of this
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WFS-FS-21329-9/2008
180NM cmos process parameters
180NM nmos
Germanium audio Amplifier diagram
"BJT Transistors"
spice high frequency SiGe bicmos transistor
circuit diagram for simple RF transceiver
BJT Transistors
CMOS Stacked RF
130NM cmos process parameters
AUDIO MOSFET POWER AMPLIFIER SCHEMATIC
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LA4160
Abstract: Germanium audio Amplifier diagram germanium diode equivalent TR13 TR17 TR22 GERMANIUM DIODE diode germanium catalog 12800T audio preamplifier circuit diagram
Text: Ordering number:ENN870D Monolithic Linear IC LA4160 Single-Chip Tape Recorder Audio System Features Package Dimensions • A single package contaning preamplifier, ALC circuit, power amplifier. • Preamplifier with high gain, and power amplifier with high gain and output.
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ENN870D
LA4160
005A-DIPtd.
LA4160
Germanium audio Amplifier diagram
germanium diode equivalent
TR13
TR17
TR22
GERMANIUM DIODE
diode germanium catalog
12800T
audio preamplifier circuit diagram
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1S188 Diode
Abstract: 1S188 LA4160 CNF7047 DS442 TR13 TR17 TR22 Germanium Amplifier Circuit diagram 1S1882
Text: Ordering number : EN870E Monolithic Linear IC LA4160 Single-Chip Tape Recorder Audio System Overview LA4160 is Single-chip tape recoder audio system. A single package contaning preamplifier, ALC circuit, power amplifier. Features • Preamplifier with high gain, and power amplifier with high gain and output.
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EN870E
LA4160
LA4160
1S188 Diode
1S188
CNF7047
DS442
TR13
TR17
TR22
Germanium Amplifier Circuit diagram
1S1882
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Avalanche photodiode APD
Abstract: germanium photodiode PIN photodiode germanium photodiode "interference filter" Photodiodes Germanium receiver photodiode preamplifier AGC photovoltaic receiver 1550 pin Photodiode preamp avalanche photodiodes PREAMP circuit diagram
Text: APPLICATIONS OPTOELECTRONICS Joachim Krug PIN photodiodes with transimpedance amplifiers for optical networks: Compact pre-amp modules immune to interference The first amplifier stage of a receiver circuit in optical networks is usually a transimpedance amplifier. It has
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DF1084
Abstract: driver AM 5766 transistor df1084 transistor intercom circuit in3754 CA3020 2N2869 2N3053 equivalent AM 5766 ca3020 equivalent
Text: Application Of The CA3020 And CA3020A Multipurpose Wide-band Power Amplifiers Application Note April 1994 AN5766.1 The discussions in this Note are applicable to both integrated circuit types. The CA3020A can operate in all circuits shown for the CA3020. The CA3020, on the other hand, has
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CA3020
CA3020A
AN5766
CA3020A
CA3020.
CA3020,
CA3020A,
150mA
DF1084
driver AM 5766
transistor df1084
transistor intercom circuit
in3754
2N2869
2N3053 equivalent
AM 5766
ca3020 equivalent
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DF1084
Abstract: IN3754 driver AM 5766 transistor df1084 AM 5766 coil 2N3053 class B push pull power amplifier class A push pull power amplifier 2N3053 equivalent Stancor output transformer
Text: Harris Semiconductor No. AN5766.1 Harris Intelligent Power April 1994 APPLICATION OF THE CA3020 AND CA3020A MULTIPURPOSE WIDE-BAND POWER AMPLIFIERS Authors: W.M. Austin and H.M. Kleinman The discussions in this Note are applicable to both integrated circuit types. The CA3020A can operate in all circuits
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AN5766
CA3020
CA3020A
CA3020.
CA3020,
CA3020A,
150mA
char3020A
DF1084
IN3754
driver AM 5766
transistor df1084
AM 5766
coil 2N3053
class B push pull power amplifier
class A push pull power amplifier
2N3053 equivalent
Stancor output transformer
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DF1084
Abstract: AM 5766 transistor df1084 driver AM 5766 coil 2N3053 Germanium audio Amplifier diagram 2.5W AUDIO AMPLIFIER CIRCUIT DIAGRAM transistors transistor intercom circuit audio amplifier class A schematic AN5766
Text: [ /Title AN57 66 /Subject (Application Of The Ca302 0 And Ca302 0a Multipurpose Wideband Power Amplifiers) /Autho r () /Keywords (Intersil Corporation, Semiconductor, wideband power amplifier, wide band power Application Of The CA3020 And CA3020A Multipurpose Wide-band Power Amplifiers
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Ca302
CA3020
CA3020A
1-888Call
AN5766
CA3020A
CA3020.
CA3020,
DF1084
AM 5766
transistor df1084
driver AM 5766
coil 2N3053
Germanium audio Amplifier diagram
2.5W AUDIO AMPLIFIER CIRCUIT DIAGRAM transistors
transistor intercom circuit
audio amplifier class A schematic
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Untitled
Abstract: No abstract text available
Text: November 3, 2008 LMH6554 2.5 GHz Ultra Linear Fully Differential Amplifier General Description Features The LMH6554 is a high performance fully differential amplifier designed to provide the exceptional signal fidelity and wide large-signal bandwidth necessary for driving 8 to 16 bit high
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LMH6554
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pnx8316
Abstract: tda10046 china car DVD player program ic latest research topics in microcontroller technology PNX83 industrial automation using cellphone bgb202 tda10046 tuner TDA8920B nexus s smartmx
Text: World News Volume 14 Semiconductors Number 1 Distribution Focus February - March 2005 Inside World News page Identification 2&3 Research 3 Distribution 4 to 8 MultiMarket Semiconductors 9 Automotive 10 Connectivity 10 Products in brief 11 Communications 12
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BFU730
Abstract: BFU690 364B AN11024 0603CS BUF690 GRM1555 network analyzer measure antenna NXP antenna design guide 2.5 ghz lna transistor
Text: AN11024 SDARS active antenna 2nd stage LNA with BFU690, 2.33 GHz Rev. 1 — 24 March 2011 Application note Document information Info Content Keywords LNA, 2.33 GHz, BFU690, SDARS Abstract This application note provides circuit, layout, BOM and performance
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AN11024
BFU690,
33GHz
BFU690
BFU730
364B
AN11024
0603CS
BUF690
GRM1555
network analyzer measure antenna
NXP antenna design guide
2.5 ghz lna transistor
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Untitled
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC3237TK LOW NOISE WIDE BAND SILICON GERMANIUM MMIC AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The μPC3237TK is a silicon germanium SiGe monolithic integrated circuit designed as low noise amplifier for the
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PC3237TK
PC3237TK
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uPC3224TB
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3227TB 5 V, SILICON GERMANIUM MMIC WIDEBAND AMPLIFIER DESCRIPTION The µPC3227TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.
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PC3227TB
PC3227TB
uPC3224TB
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nec marking power amplifier
Abstract: nec 575 HS350
Text: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8211TK SiGe LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS DESCRIPTION The µPC8211TK is a silicon germanium SiGe monolithic integrated circuit designed as low noise amplifier for GPS and mobile communications.
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PC8211TK
PC8211TK
nec marking power amplifier
nec 575
HS350
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LEE14A
Abstract: No abstract text available
Text: February 5, 2009 LMH6554 2.5 GHz Ultra Linear Fully Differential Amplifier General Description Features The LMH6554 is a high performance fully differential amplifier designed to provide the exceptional signal fidelity and wide large-signal bandwidth necessary for driving 8 to 16 bit high
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LMH6554
16-ductor
LEE14A
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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HS350
Abstract: PC3237TK MARKING 6N
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3237TK LOW NOISE WIDE BAND SILICON GERMANIUM MMIC AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The μPC3237TK is a silicon germanium SiGe monolithic integrated circuit designed as low noise amplifier for the mobile digital TV etc. This device exhibits low noise figure and high power gain characteristics.
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PC3237TK
PC3237TK
HS350
MARKING 6N
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Untitled
Abstract: No abstract text available
Text: AN11066 SDARS active antenna 1st stage LNA with BFU730F, 2.33 GHz Rev. 1 — 25 October 2011 Application note Document information Info Content Keywords LNA, 2.33 GHz, BFU730F, SDARS. Abstract This document provides circuit, layout, BOM and performance information
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AN11066
BFU730F,
BFU730F
AN11066
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old nec tv diagram
Abstract: HS350 PC3237TK
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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R04003
Abstract: uPC8215TU HS350 upc8215tu-e2-a R0400
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8215TU SiGe LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS DESCRIPTION The µPC8215TU is a silicon germanium SiGe monolithic integrated circuit designed as low noise amplifier for GPS and mobile communications.
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PC8215TU
PC8215TU
R04003
uPC8215TU
HS350
upc8215tu-e2-a
R0400
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rca transistor manual
Abstract: rca case outlines diode 1N539 2N301 2N140 transistor bf 175 rca thyristor manual drift-field 2N1637 transistor rca 2n173
Text: RCA Transistor Manual T h is book has been prepared to assist those who work or experiment with semi conductor devices and circuits. It will be useful to engineers, service technicians, edu cators, students, radio amateurs, hobbyists, and others technically interested in transis
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kt420
Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
Text: Introduction This summary contains abridged information on the range of NKT semiconductor products, and the five main product groups are listed below. a HYBRID MICROCIRCUITS b) SILICON TRANSISTORS c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS
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TIS69 equivalent
Abstract: 2N3575 Germanium itt TIS59 TIS58 2N2386 TIS26
Text: IN T R O D U C T IO N This booklet is designed to simplify your selection of field effect transistors, which best meet your requirement. It is a comprehensive pocket size reference to your widest choice of field effect transistors. This broad selection is your best assurance of pin-pomting the
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2N5045,
2N5046,
2N5047
TIS69 equivalent
2N3575
Germanium itt
TIS59
TIS58
2N2386
TIS26
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