GENERAL TRANSISTOR HFE 210 CLASSIFICATION MARKING Search Results

2SB709A

Abstract: 2SB709AR 2sb709a-q 2SB709A-R 2SD601A SOT-23-hg
Contextual Info: 2SB709A -0.2A , -45V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-23 For general amplification Complementary of the 2SD601A A L 3 3 C B Top View CLASSIFICATION OF hFE

2SA1309A

Abstract: 2SC3311A
Contextual Info: Transistor 2SA1309A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SC3311A Unit: mm 3.0±0.2 4.0±0.2 • Features marking Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage

2SD1819A

Abstract: transistor ZR 2SD1819AR 2SB1218A 2SD1819AS 2SD1819A-R 2SD1819A-S
Contextual Info: 2SD1819A 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente 24 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES High DC Current Gain. Low collector to emitter saturation voltage VCE sat . Complementary to 2SB1218A

smd transistor bq

Abstract: marking BQ sot-23 2PB709AQ 2PB709AR ja TRANSISTOR smd bq smd transistor smd transistor marking bs MARKING SMD PNP TRANSISTOR smd transistor pnp bq SMD TRANSISTOR MARKING BR
Contextual Info: Transistors IC SMD Type PNP General Purpose Transistor 2PB709A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage max. 45 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1

transistor NF

Abstract: 2SB709A 2SD601A BQ 15 Transistor
Contextual Info: Transistor 2SB709A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD601A Unit: mm +0.2 2.8 –0.3 1.45 +0.1 +0.2 0.95 0.95 2.9 –0.05 1.9±0.2 3 2 Collector to base voltage VCBO –45 V Collector to emitter voltage VCEO –45

2SB1218A

Abstract: 2SD1819A
Contextual Info: Transistor 2SB1218A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD1819A Unit: mm 2.1±0.1 • Features 0.425 0.3–0 0.65 1.3±0.1 +0.1 1.25±0.1 1 0.65 ● High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and

general Transistor hFE 210 CLASSIFICATION Marking

Abstract: 2SB1462 2SD2216
Contextual Info: Transistor 2SB1462 Silicon PNP epitaxial planer type For general amplification Complementary to 2SD2216 Unit: mm 1.6±0.15 • Features 0.4 0.5 +0.1 0.2–0.05 0.8±0.1 1 3 0.5 1.6±0.1 ● High foward current transfer ratio hFE. SS-Mini type package, allowing downsizing of the equipment

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2PD601AW TRANSISTOR NPN FEATURES  High Collector Current  Low Colletor-Emitter Saturation Voltage APPLICATIONS SOT–323  General Purpose Switching and Amplification

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2PD601AW TRANSISTOR NPN FEATURES  High Collector Current  Low Colletor-Emitter Saturation Voltage APPLICATIONS SOT–323  General Purpose Switching and Amplification

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SD1819A TRANSISTOR NPN FEATURES SOT–323  High DC Current Gain  Complementary to 2SB1218A  Low Collector to Emitter Saturation Voltage APPLICATIONS  General Purpose Amplification

smd transistor marking n9

Abstract: smd transistor marking n5 2PB709ARW smd transistor n9 02 N5 MARKING SMD PNP TRANSISTOR 2PB709AQW 2PB709ASW 2PB709AW N5 smd transistor N5
Contextual Info: Transistors IC SMD Type PNP General Purpose Transistor 2PB709AW Features High collector current max. 100 mA . Low collector-emitter saturation voltage (max. 500 mV). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage

smd transistor 6d

Abstract: SMD Transistor 6f marking 6d SMD TRANSISTOR MARKING 6D 6E SMD 6F SMD 6F SMD Transistor transistor 625 smd transistor marking 6d 2PD601AQW
Contextual Info: Transistors SMD Type NPN General Purpose Transistor 2PD601AW Features High collector current max. 100 mA Low collector-emitter saturation voltage (max. 500 mV). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

smd transistor marking K7

Abstract: BCV71 BCV72
Contextual Info: Transistors IC SMD Type NPN General Purpose Transistors BCV71,BCV72 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Low voltage max. 60 V . 0.4 3 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1

transistor smd K2

Abstract: transistor smd marking k2 k2 smd transistor smd transistor k2 BCW71 BCW72 SMD TRANSISTOR MARKING k2
Contextual Info: Transistors IC SMD Type NPN General Purpose Transistors BCW71,BCW72 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low voltage max. 45 V . 0.55 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1

2SB1462

Abstract: 2SD2216 marking YQ
Contextual Info: Transistor 2SD2216 Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1462 Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE sat . SS-Mini type package, allowing downsizing of the equipment

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SB1218A TRANSISTOR PNP FEATURES SOT–323  High DC Current Gain  Complementary to 2SD1819A APPLICATIONS  General Purpose Amplification MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SB1218A

Abstract: 2SD1819A
Contextual Info: Transistor 2SD1819A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1218A Unit: mm 2.1±0.1 • Features +0.1 0.3–0 0.65 1.3±0.1 0.65 3 Ratings Unit VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage

2SB709A

Abstract: 2SD601A general Transistor hFE 210 CLASSIFICATION Marking
Contextual Info: Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB709A Unit: mm +0.2 2.8 –0.3 Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7 V Peak collector current

smd transistor marking D3

Abstract: BCW33 SMD TRANSISTOR D2 marking D2 SOT-23 BCW31 BCW32 smd TRANSISTOR marking ku
Contextual Info: Transistors IC SMD Type NPN General Purpose Transistors BCW31,BCW32,BCW33 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage max. 32 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A
Contextual Info: Transistor 2SB0709A 2SB709A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD0601A (2SD601A) Unit: mm +0.2 2.8 –0.3 1.45 +0.1 +0.2 0.95 0.95 2.9 –0.05 3 2 Collector to base voltage VCBO –45 V Collector to emitter voltage

CHT856BPT

Abstract: 041 itt diode
Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHT856BPT SURFACE MOUNT PNP Muti-Chip General Purpose Amplifier VOLTAGE 65 Volts CURRENT 0.1 Ampere APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. FEATURE .019 0.50 .041 (1.05)

CHT857BGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHT857BGP SURFACE MOUNT PNP Muti-Chip General Purpose Amplifier VOLTAGE 45 Volts CURRENT 0.1 Ampere APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. FEATURE 2 .103 (2.64) .086 (2.20)

CHT856BWGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHT856BWGP SURFACE MOUNT PNP Muti-Chip General Purpose Amplifier VOLTAGE 65 Volts CURRENT 0.1 Ampere APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. FEATURE SC-70/SOT-323 * Surface mount package. SC-70/SOT-323

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A
Contextual Info: Transistor 2SB0709A 2SB709A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD0601A (2SD601A) Unit: mm 0.40+0.10 ñ0.05 0.4±0.2 5° 1.50+0.25 -0.05 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and