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    GENERAL TRANSISTOR HFE 210 CLASSIFICATION MARKING Search Results

    GENERAL TRANSISTOR HFE 210 CLASSIFICATION MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GENERAL TRANSISTOR HFE 210 CLASSIFICATION MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SB709A

    Abstract: 2SB709AR 2sb709a-q 2SB709A-R 2SD601A SOT-23-hg
    Text: 2SB709A -0.2A , -45V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-23 For general amplification Complementary of the 2SD601A A L 3 3 C B Top View CLASSIFICATION OF hFE


    Original     		2SB709A OT-23 2SD601A 2SB709A-Q 2SB709A-R 2SB709A-S 18ollector 21-Jan-2011 200MHz 2SB709A 2SB709AR 2sb709a-q 2SB709A-R 2SD601A SOT-23-hg PDF

    2SA1309A

    Abstract: 2SC3311A
    Text: Transistor 2SA1309A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SC3311A Unit: mm 3.0±0.2 4.0±0.2 • Features marking Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage


    Original     		2SA1309A 2SC3311A 2SA1309A 2SC3311A PDF

    2SD1819A

    Abstract: transistor ZR 2SD1819AR 2SB1218A 2SD1819AS 2SD1819A-R 2SD1819A-S
    Text: 2SD1819A 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente 24 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES High DC Current Gain. Low collector to emitter saturation voltage VCE sat . Complementary to 2SB1218A


    Original     		2SD1819A OT-323 2SB1218A 2SD1819A-Q 2SD1819A-R 2SD1819A-S 24-Feb-2011 100mA 100mA, 200MHz 2SD1819A transistor ZR 2SD1819AR 2SB1218A 2SD1819AS 2SD1819A-S PDF

    smd transistor bq

    Abstract: marking BQ sot-23 2PB709AQ 2PB709AR ja TRANSISTOR smd bq smd transistor smd transistor marking bs MARKING SMD PNP TRANSISTOR smd transistor pnp bq SMD TRANSISTOR MARKING BR
    Text: Transistors IC SMD Type PNP General Purpose Transistor 2PB709A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage max. 45 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1


    Original     		2PB709A OT-23 2PB709AR 2PB709AQ 2PB709AS smd transistor bq marking BQ sot-23 2PB709AQ 2PB709AR ja TRANSISTOR smd bq smd transistor smd transistor marking bs MARKING SMD PNP TRANSISTOR smd transistor pnp bq SMD TRANSISTOR MARKING BR PDF

    transistor NF

    Abstract: 2SB709A 2SD601A BQ 15 Transistor
    Text: Transistor 2SB709A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD601A Unit: mm +0.2 2.8 –0.3 1.45 +0.1 +0.2 0.95 0.95 2.9 –0.05 1.9±0.2 3 2 Collector to base voltage VCBO –45 V Collector to emitter voltage VCEO –45


    Original     		2SB709A 2SD601A 100Hz 10kHz 270Hz transistor NF 2SB709A 2SD601A BQ 15 Transistor PDF

    2SB1218A

    Abstract: 2SD1819A
    Text: Transistor 2SB1218A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD1819A Unit: mm 2.1±0.1 • Features 0.425 0.3–0 0.65 1.3±0.1 +0.1 1.25±0.1 1 0.65 ● High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and


    Original     		2SB1218A 2SD1819A 100Hz 10kHz 270Hz 2SB1218A 2SD1819A PDF

    general Transistor hFE 210 CLASSIFICATION Marking

    Abstract: 2SB1462 2SD2216
    Text: Transistor 2SB1462 Silicon PNP epitaxial planer type For general amplification Complementary to 2SD2216 Unit: mm 1.6±0.15 • Features 0.4 0.5 +0.1 0.2–0.05 0.8±0.1 1 3 0.5 1.6±0.1 ● High foward current transfer ratio hFE. SS-Mini type package, allowing downsizing of the equipment


    Original     		2SB1462 2SD2216 100Hz 10kHz 270Hz general Transistor hFE 210 CLASSIFICATION Marking 2SB1462 2SD2216 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2PD601AW TRANSISTOR NPN FEATURES  High Collector Current  Low Colletor-Emitter Saturation Voltage APPLICATIONS SOT–323  General Purpose Switching and Amplification


    Original     		OT-323 2PD601AW 100mA 100mA, 2PD601AQW 100MHz 2PD601ARW 2PD601ASW PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2PD601AW TRANSISTOR NPN FEATURES  High Collector Current  Low Colletor-Emitter Saturation Voltage APPLICATIONS SOT–323  General Purpose Switching and Amplification


    Original     		OT-323 2PD601AW 100mA 100mA, 2PD601AQW 100MHz 2PD601ARW 2PD601ASW PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SD1819A TRANSISTOR NPN FEATURES SOT–323  High DC Current Gain  Complementary to 2SB1218A  Low Collector to Emitter Saturation Voltage APPLICATIONS  General Purpose Amplification


    Original     		OT-323 2SD1819A 2SB1218A 100mA, 200MHz PDF

    smd transistor marking n9

    Abstract: smd transistor marking n5 2PB709ARW smd transistor n9 02 N5 MARKING SMD PNP TRANSISTOR 2PB709AQW 2PB709ASW 2PB709AW N5 smd transistor N5
    Text: Transistors IC SMD Type PNP General Purpose Transistor 2PB709AW Features High collector current max. 100 mA . Low collector-emitter saturation voltage (max. 500 mV). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage


    Original     		2PB709AW 2PB709AQW 2PB709ARW 2PB709ASW 2PB709ARW smd transistor marking n9 smd transistor marking n5 smd transistor n9 02 N5 MARKING SMD PNP TRANSISTOR 2PB709AQW 2PB709ASW 2PB709AW N5 smd transistor N5 PDF

    smd transistor 6d

    Abstract: SMD Transistor 6f marking 6d SMD TRANSISTOR MARKING 6D 6E SMD 6F SMD 6F SMD Transistor transistor 625 smd transistor marking 6d 2PD601AQW
    Text: Transistors SMD Type NPN General Purpose Transistor 2PD601AW Features High collector current max. 100 mA Low collector-emitter saturation voltage (max. 500 mV). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage


    Original     		2PD601AW 2PD601AQW 2PD601ARW 2PD601ASW 2PD601ARW smd transistor 6d SMD Transistor 6f marking 6d SMD TRANSISTOR MARKING 6D 6E SMD 6F SMD 6F SMD Transistor transistor 625 smd transistor marking 6d 2PD601AQW PDF

    smd transistor marking K7

    Abstract: BCV71 BCV72
    Text: Transistors IC SMD Type NPN General Purpose Transistors BCV71,BCV72 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Low voltage max. 60 V . 0.4 3 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


    Original     		BCV71 BCV72 OT-23 BCV71 smd transistor marking K7 BCV72 PDF

    transistor smd K2

    Abstract: transistor smd marking k2 k2 smd transistor smd transistor k2 BCW71 BCW72 SMD TRANSISTOR MARKING k2
    Text: Transistors IC SMD Type NPN General Purpose Transistors BCW71,BCW72 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low voltage max. 45 V . 0.55 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1


    Original     		BCW71 BCW72 OT-23 BCW71 transistor smd K2 transistor smd marking k2 k2 smd transistor smd transistor k2 BCW72 SMD TRANSISTOR MARKING k2 PDF

    2SB1462

    Abstract: 2SD2216 marking YQ
    Text: Transistor 2SD2216 Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1462 Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE sat . SS-Mini type package, allowing downsizing of the equipment


    Original     		2SD2216 2SB1462 2SB1462 2SD2216 marking YQ PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SB1218A TRANSISTOR PNP FEATURES SOT–323  High DC Current Gain  Complementary to 2SD1819A APPLICATIONS  General Purpose Amplification MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		OT-323 2SB1218A 2SD1819A PDF

    2SB1218A

    Abstract: 2SD1819A
    Text: Transistor 2SD1819A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1218A Unit: mm 2.1±0.1 • Features +0.1 0.3–0 0.65 1.3±0.1 0.65 3 Ratings Unit VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage


    Original     		2SD1819A 2SB1218A 2SB1218A 2SD1819A PDF

    2SB709A

    Abstract: 2SD601A general Transistor hFE 210 CLASSIFICATION Marking
    Text: Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB709A Unit: mm +0.2 2.8 –0.3 Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7 V Peak collector current


    Original     		2SD601A 2SB709A 2SB709A 2SD601A general Transistor hFE 210 CLASSIFICATION Marking PDF

    smd transistor marking D3

    Abstract: BCW33 SMD TRANSISTOR D2 marking D2 SOT-23 BCW31 BCW32 smd TRANSISTOR marking ku
    Text: Transistors IC SMD Type NPN General Purpose Transistors BCW31,BCW32,BCW33 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage max. 32 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1


    Original     		BCW31 BCW32 BCW33 OT-23 BCW32 BCW31 smd transistor marking D3 BCW33 SMD TRANSISTOR D2 marking D2 SOT-23 smd TRANSISTOR marking ku PDF

    2SB0709A

    Abstract: 2SB709A 2SD0601A 2SD601A
    Text: Transistor 2SB0709A 2SB709A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD0601A (2SD601A) Unit: mm +0.2 2.8 –0.3 1.45 +0.1 +0.2 0.95 0.95 2.9 –0.05 3 2 Collector to base voltage VCBO –45 V Collector to emitter voltage


    Original     		2SB0709A 2SB709A) 2SD0601A 2SD601A) 2SB0709A 2SB709A 2SD0601A 2SD601A PDF

    CHT856BPT

    Abstract: 041 itt diode
    Text: CHENMKO ENTERPRISE CO.,LTD CHT856BPT SURFACE MOUNT PNP Muti-Chip General Purpose Amplifier VOLTAGE 65 Volts CURRENT 0.1 Ampere APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. FEATURE .019 0.50 .041 (1.05)


    Original     		CHT856BPT OT-23 OT-23) CHT856BPT) CHT856BPT 041 itt diode PDF

    CHT857BGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHT857BGP SURFACE MOUNT PNP Muti-Chip General Purpose Amplifier VOLTAGE 45 Volts CURRENT 0.1 Ampere APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. FEATURE 2 .103 (2.64) .086 (2.20)


    Original     		CHT857BGP OT-23 OT-23) CHT857BGP PDF

    CHT856BWGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHT856BWGP SURFACE MOUNT PNP Muti-Chip General Purpose Amplifier VOLTAGE 65 Volts CURRENT 0.1 Ampere APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. FEATURE SC-70/SOT-323 * Surface mount package. SC-70/SOT-323


    Original     		CHT856BWGP SC-70/SOT-323 SC-70/SOT-323) the10 CHT856BWGP PDF

    2SB0709A

    Abstract: 2SB709A 2SD0601A 2SD601A
    Text: Transistor 2SB0709A 2SB709A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD0601A (2SD601A) Unit: mm 0.40+0.10 ñ0.05 0.4±0.2 5° 1.50+0.25 -0.05 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and


    Original     		2SB0709A 2SB709A) 2SD0601A 2SD601A) 2SB0709A 2SB709A 2SD0601A 2SD601A PDF