B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
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GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
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GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
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GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
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JANTX1N5719
Abstract: 01038-1N5719TX C68001 1N5719 equivalent MA1N5719HX 1N4456 96341 HP JANTX1N5719 MA1N5719 C-68001
Text: REVISIONS LTR DESCRIPTION DATE Page 3, paragraph 3.5 marking. Page 9, added vendor part number reference to paragraph 6.5. Update lead finish, manufacturer information, editorial and format changes. A B APPROVED 8 April 2002 Thomas M. Hess 18 August 2008 Thomas M. Hess
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MIL-PRF-19500/443
037Z3
JANTX1N5719
01038-1N5719TX
C68001
1N5719 equivalent
MA1N5719HX
1N4456
96341
HP JANTX1N5719
MA1N5719
C-68001
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D65019
Abstract: 1N23 diode JAN1N23WE 1N23WGMR 1N23 Diode Holder 037Z3 01037 JAN1N23WG JAN1N23WGMR ASME-14 1N23WG
Text: REVISIONS LTR A DESCRIPTION DATE APPROVED Add new source, correct figure 1 notes. Editorial changes throughout. 2 June 2006 Thomas M. Hess MIL-S-19500/322 has been inactivated. This drawing may be used as a substitute. Prepared in accordance with ASME-14.100
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MIL-S-19500/322
ASME-14
037Z3
D65019
1N23 diode
JAN1N23WE
1N23WGMR
1N23 Diode Holder
037Z3 01037
JAN1N23WG
JAN1N23WGMR
1N23WG
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label infineon lot number
Abstract: zestron washing machine verilog code Infineon code date marking format INFINEON LOT NUMBER code label washing machine panasonic schematic INFINEON trace code label samsung bluetooth KP12x matlab washing machine
Text: KP12x Barometric Air Pressure Sensors Freq uent ly Asked Quest i ons App lication No te Rev. 1.1, 2009-06-01 Sense & Control Edition 2009-06-01 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved.
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KP12x
KP12x
KP12x-Absolute
label infineon lot number
zestron
washing machine verilog code
Infineon code date marking format
INFINEON LOT NUMBER code label
washing machine panasonic schematic
INFINEON trace code label
samsung bluetooth
matlab washing machine
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1N21WE
Abstract: 1N21WEM 1N21WEMR JAN1N21WE JAN1N21WEM JAN-1N21WEM C66058
Text: . REVISIONS LTR DESCRIPTION Change supplier, validate, editorial changes A DATE APPROVED 18 February 2009 Alan Barone MIL-S-19500/232 has been canceled. This drawing may be used as a substitute for MIL-S-19500/232. THIS DRAWING WAS REVIEWED ON 18 FEBRUARY
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MIL-S-19500/232
MIL-S-19500/232.
MIL-STD-100
1N21WE,
1N21WEM
1N21WEMR
00005-1N21WE
00005-1N21WEM
00005-1N21WEMR
UXAN1N21WE
1N21WE
1N21WEMR
JAN1N21WE
JAN1N21WEM
JAN-1N21WEM
C66058
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XK power 220
Abstract: SMZJ3788 SMZJ3788A SMZJ3789A SMZJ3790A SMZJ3791A SMZJ3792A SMZJ3809B
Text: SMZJ3788 thru SMZJ3809B Vishay Semiconductors formerly General Semiconductor Surface Mount Power Voltage-Regulating Diodes Zener Voltage 9.1 to 68V Steady State Power 1.5W DO-214AA SMBJ-Bend e g a lt o V ed e d n Exte Rang Cathode Band 0.155 (3.94) 0.130 (3.30)
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SMZJ3788
SMZJ3809B
DO-214AA
09-Oct-02
XK power 220
SMZJ3788A
SMZJ3789A
SMZJ3790A
SMZJ3791A
SMZJ3792A
SMZJ3809B
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TVS marking ED VISHAY
Abstract: TVS marking code ED VISHAY
Text: BZD27 Series Vishay Semiconductors New Product formerly General Semiconductor Zener Diodes VZ Range 3.6 to 200V TVS VWM Range 6.2 to 160V Power Dissipation 2.3W DO-219AB SMF Cathode Band Top View ed t n e t a P 1.8 ± 0.1 1.0 ± 0.2 2.8 ± 0.1 5° Mounting Pad Layout
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BZD27
DO-219AB
DO-219
G1-10K
50K/box
30K/box
08-Apr-05
TVS marking ED VISHAY
TVS marking code ED VISHAY
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c4v7p
Abstract: C6V2P Bz027 c15p zener c47p c5v6p BZD27-C4V7P BZD27-C6V8P C18p c51p
Text: BZD27 Series Vishay Semiconductors New Product formerly General Semiconductor Zener Diodes VZ Range 3.6 to 200V TVS VWM Range 6.2 to 160V Power Dissipation 2.3W DO-219AB SMF Cathode Band Top View ed t n e t a P 1.8 ± 0.1 1.0 ± 0.2 2.8 ± 0.1 5° Mounting Pad Layout
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BZD27
DO-219AB
DO-219
G1-10K
50K/box
30K/box
18-Jul-08
c4v7p
C6V2P
Bz027
c15p zener
c47p
c5v6p
BZD27-C4V7P
BZD27-C6V8P
C18p
c51p
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Untitled
Abstract: No abstract text available
Text: New Product BYD13DGP thru BYD13MGP Vishay General Semiconductor Avalanche Glass Passivated Junction Rectifier FEATURES • Cavity-free glass-passivated junction • Avalanche surge capability guaranteed • Low forward voltage drop ed* t n e Pat *Glass Encapsulation
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BYD13DGP
BYD13MGP
DO-204AL
DO-41)
MIL-S-19500
2002/95/EC
2002/96/EC
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: BYD13DGP thru BYD13MGP New Product Vishay General Semiconductor Avalanche Glass Passivated Junction Rectifier FEATURES • Cavity-free glass-passivated junction • Avalanche surge capability guaranteed • Low forward voltage drop ed* t n e Pat *Glass Encapsulation
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BYD13DGP
BYD13MGP
DO-204AL
DO-41)
MIL-S-19500
2002/95/EC
2002/96/EC
08-Apr-05
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90024-03TX
Abstract: pic646
Text: REVISIONS LTR DESCRIPTION DATE APPROVED A Revise drawing, update sources. 7 August 2000 Monica Poelking B Supplier/address/CAGE change; reformat document 23 May 2002 Thomas M. Hess C Correct figure 1 - header thickness, supplier name, editorial changes throughout - RK
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037Z3
ASME-14
12certificate
90024-01TX,
90024-02TX,
90024-03TX,
90024-04TX,
90024-05TX,
90024-06TX,
PIC645
90024-03TX
pic646
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SMBG10
Abstract: SMBJ10C SMBJ10CA KD 271
Text: SMBG5.0 thru 188CA Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-215AA SMBG Cathode Band Stand-off Voltage 5.0 to 188V Peak Pulse Power 600W ed e d n Exte e Rang ag t l o V Mounting Pad Layout
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188CA
DO-215AA
24-Jul-03
SMBG10
SMBJ10C
SMBJ10CA
KD 271
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CK 66 UL 94V-0
Abstract: MZ 197 3 Volt transzorb CK 66 94V-0 KM MARKING SMBG10 SMBJ10C SMBJ10CA
Text: SMBG5.0 thru 188CA Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-215AA SMBG 0.083 (2.10) 0.077 (1.96) 0.155 (3.94) 0.130 (3.30) ed e d n Exte e Rang ag t l o V Mounting Pad Layout Dimensions in inches
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188CA
DO-215AA
26-Sep-02
CK 66 UL 94V-0
MZ 197
3 Volt transzorb
CK 66 94V-0
KM MARKING
SMBG10
SMBJ10C
SMBJ10CA
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Untitled
Abstract: No abstract text available
Text: AOZ8208 Eight-line TVS Diode Array General Description Features The AOZ8208 is a transient voltage suppressor diode array designed to protect data lines from high transient conditions and ESD. This state-of-the-art device utilizes AOS leading edge Trench Vertical Structure [TVS]2
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AOZ8208
AOZ8208
IEC61000-4-5
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AOZ8208DI
Abstract: AOS date code System alpha marking code dfn 8l
Text: AOZ8208 Eight-line TVS Diode Array General Description Features The AOZ8208 is a transient voltage suppressor diode array designed to protect data lines from high transient conditions and ESD. This state-of-the-art device utilizes AOS leading edge Trench Vertical Structure [TVS]2
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AOZ8208
AOZ8208
AOZ8208DI
AOS date code System
alpha marking code dfn 8l
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Untitled
Abstract: No abstract text available
Text: TQM8M9079 500−2700 MHz Variable Gain Amplifier Applications • Wireless Infrastructure LTE / WCDMA / CDMA / EDGE PtP IF Gain Control General Purpose Wireless 20-pin 5x5 mm Leadless Package Product Features Functional Block Diagram
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TQM8M9079
20-pin
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Z11 Marking Code
Abstract: No abstract text available
Text: TQM8M9079 500−2700 MHz Variable Gain Amplifier Applications • Wireless Infrastructure LTE / WCDMA / CDMA / EDGE PtP IF Gain Control General Purpose Wireless 20-pin 5x5 mm Leadless Package Product Features Functional Block Diagram
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TQM8M9079
20-pin
TQM8M9079
Z11 Marking Code
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Untitled
Abstract: No abstract text available
Text: TPSMC6.8 thru TPSMC47A Vishay General Semiconductor Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability & High Reliability Conditions FEATURES • Patented PAR construction • Available in Unidirectional polarity only ed* • 1500 W peak pulse power capability with a
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TPSMC47A
J-STD-020C,
2002/95/EC
2002/96/EC
08-Apr-05
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DO-214BA
Abstract: No abstract text available
Text: RGF1A thru RGF1M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.3 V trr 150 ns, 250 ns, 500 ns Tj max. 175 °C ed* t n e Pat
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DO-214BA
MIL-S-19500
10-Aug-05
DO-214BA
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Untitled
Abstract: No abstract text available
Text: TPSMC6.8 thru TPSMC47A Vishay General Semiconductor Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability & High Reliability Conditions FEATURES • Patented PAR construction • Available in Unidirectional polarity only ed* • 1500 W peak pulse power capability with a
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TPSMC47A
J-STD-020C,
2002/95/EC
2002/96/EC
08-Apr-05
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JESD22-B102D
Abstract: J-STD-002B TPSMC10
Text: TPSMC6.8 thru TPSMC47A Vishay General Semiconductor Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability & High Reliability Conditions FEATURES • Patented PAR construction • Available in Unidirectional polarity only ed* • 1500 W peak pulse power capability with a
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TPSMC47A
J-STD-020C,
DO-214AB
2002/95/EC
2002/96/EC
08-Apr-05
JESD22-B102D
J-STD-002B
TPSMC10
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Untitled
Abstract: No abstract text available
Text: Central" CMPTH81 Semiconductor Corp. SURFACE MOUNT PNP SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy mold ed in a surface mount package, designed for general RF amplifier applications. MARKING CODE: C3D
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OCR Scan
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CMPTH81
OT-23
20-February
OT-23
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Untitled
Abstract: No abstract text available
Text: Central“ CMPTH81 Semiconductor Corp. SURFACE MOUNT PNP SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy mold ed in a surface mount package, designed for general RF amplifier applications. MARKING CODE: C3D
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CMPTH81
1001OV,
100MHz
20-February
OT-23
OT-23
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