GENERAL SEMICONDUCTOR MARKING 36A SMA Search Results

FDD26AN06A0

Contextual Info: FDD26AN06A0_F085 N-Channel PowerTrench MOSFET 60V, 36A, 26mΩ Features Applications • rDS ON = 20mΩ (Typ.), VGS = 10V, ID = 36A • Motor / Body Load Control • Qg(tot) = 13nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management

Contextual Info: FDD26AN06A0_F085 N-Channel PowerTrench MOSFET 60V, 36A, 26mΩ Features Applications • rDS ON = 20mΩ (Typ.), VGS = 10V, ID = 36A • Motor / Body Load Control • Qg(tot) = 13nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management

FDD24AN06LA0

Contextual Info: FDD24AN06LA0_F085 N-Channel Logic Level PowerTrench MOSFET 60V, 36A, 24mΩ Features Applications • r DS ON = 20mΩ (Typ.), VGS = 5V, ID = 36A • Motor / Body Load Control • Qg(tot) = 16nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management

Contextual Info: FDD24AN06LA0_F085 N-Channel Logic Level PowerTrench MOSFET 60V, 36A, 24mΩ Features Applications • r DS ON = 20mΩ (Typ.), VGS = 5V, ID = 36A • Motor / Body Load Control • Qg(tot) = 16nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management

Contextual Info: FQA36P15 / FQA36P15_F109 P-Channel QFET MOSFET −150 V, -36 A, 90 mΩ Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce

M043 Diode

Abstract: FDD26AN06A0 m043
Contextual Info: FDD26AN06A0_F085 N-Channel PowerTrench MOSFET 60V, 36A, 26mΩ Features Applications • rDS ON = 20mΩ (Typ.), VGS = 10V, ID = 36A • Motor / Body Load Control • Qg(tot) = 13nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

KP-69

Abstract: mosfet 30V 18A TO 252 FDD24AN06LA0
Contextual Info: FDD24AN06LA0_F085 N-Channel Logic Level PowerTrench MOSFET 60V, 36A, 24mΩ Features Applications • r DS ON = 20mΩ (Typ.), VGS = 5V, ID = 36A • Motor / Body Load Control • Qg(tot) = 16nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management

N310AS

Abstract: N310AP ISL9N310AP3 ISL9N310AS3 ISL9N310AS3ST
Contextual Info: ISL9N310AP3/ISL9N310AS3ST/ISL9N310AS3 N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

N310AS

Abstract: ISL9N310AP3 ISL9N310AS3 ISL9N310AS3ST M028
Contextual Info: ISL9N310AP3/ISL9N310AS3ST/ISL9N310AS3 N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

6V8C 67

Contextual Info: P4SMA6.8A Series Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AC SMA V(BR) 6.8 to 220V Peak Pulse Power 400W Cathode Band 0.065 (1.65) Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.049 (1.25)

Contextual Info: TPCA8A01-H ＴOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type Ultra-High-Speed U-MOS Ⅲ TPCA8A01-H High Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm

FCP36N60N

Abstract: fcp36N60 Mosfet application note fairchild FCp Series MOSFET 600V 36A
Contextual Info: SupreMOSTM FCP36N60N N-Channel MOSFET 600V, 36A, 90m Features Description • RDS on = 81m ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based

6v8a

Abstract: diode 6v8a IEC1000-4-4 IEC801-2 IEC801-4 P4SMA10CA
Contextual Info: P4SMA Series Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AC SMA d e e d en ang t x E eR g a t l Vo Cathode Band 0.065 (1.65) Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.049 (1.25)

Contextual Info: P4SMA6.8A Series Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AC SMA Cathode Band 0.065 (1.65) 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) V(BR) Unidirectional 6.8 to 540V V(BR) Bidirectional

Fairchild Semiconductor - Process

Abstract: FCP36N60N mosfet 600v
Contextual Info: SupreMOSTM FCP36N60N tm N-Channel MOSFET 600V, 36A, 90mΩ Features Description • RDS on = 81mΩ ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based

FCB36N60N

Abstract: ISD36A MOSFET 600V 36A
Contextual Info: SupreMOSTM FCB36N60N N-Channel MOSFET 600V, 36A, 90m Features Description • RDS on = 81m ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based

6v8a

Abstract: diode marking on semiconductor transzorb IEC1000-4-4 3 Volt transzorb 420 6V8A diode 47c diode 6v8a TVS 33A type marking code 30C IEC801-2
Contextual Info: P4SMA Series Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AC SMA Cathode Band 0.065 (1.65) 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) V(BR) Unidirectional 6.8 to 540V V(BR) Bidirectional 6.8 to 220V

Contextual Info: P4SMA Series Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AC SMA d e e d en ang t x E eR g a t l Vo Cathode Band 0.065 (1.65) Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.049 (1.25)

N-Channel 40V MOSFET 32a

Abstract: FDB8878
Contextual Info: FDB8878 N-Channel Logic Level PowerTrench MOSFET 30V, 48A, 14mΩ General Descriptions Features „ rDS ON = 14mΩ, VGS = 10V, ID = 40A This N-Channel MOSFET has been designed specifically to „ rDS(ON) = 18mΩ, VGS = 4.5V, ID = 36A improve the overall efficiency of DC/DC converters using

Contextual Info: FDP8878 N-Channel Logic Level PowerTrench MOSFET 30V, 40A, 15mΩ Features General Descriptions ̈ rDS ON = 15mΩ, VGS = 10V, ID = 40A This N-Channel MOSFET has been designed specifically to ̈ rDS(ON) = 19mΩ, VGS = 4.5V, ID = 36A improve the overall efficiency of DC/DC converters using

FDP8878

Contextual Info: FDP8878 N-Channel Logic Level PowerTrench MOSFET 30V, 40A, 15mΩ General Descriptions Features „ rDS ON = 15mΩ, VGS = 10V, ID = 40A This N-Channel MOSFET has been designed specifically to „ rDS(ON) = 19mΩ, VGS = 4.5V, ID = 36A improve the overall efficiency of DC/DC converters using

Contextual Info: SupreMOS FCA36N60NF TM tm N-Channel MOSFET, FRFET 600V, 36A, 95mΩ Features Description • RDS on = 80mΩ ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling