GENERAL PURPOSE COMPLEMENTARY TRANSISTORS 1A 50V Search Results
GENERAL PURPOSE COMPLEMENTARY TRANSISTORS 1A 50V Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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GRM022C71A682KE19L | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose |
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GRM033C81A224ME01D | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose |
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GRM155D70G475ME15J | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose |
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GRM155R61J334KE01J | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose |
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GRM2195C2A333JE01J | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose |
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GENERAL PURPOSE COMPLEMENTARY TRANSISTORS 1A 50V Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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em 234 stepper
Abstract: 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090
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O01ED0 H1-O01ED0-0106030ND em 234 stepper 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090 | |
2SC5586 equivalent
Abstract: 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent
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TM1641S-L TM1661B-L TM1661P-L TM1661S-L TM2541B-L TM2561B-L TM341M-L TM341S-L TM341S-R TM361M-L 2SC5586 equivalent 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent | |
BZX85C12V
Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
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DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E | |
NTE388
Abstract: NPN 250W NTE68 NTE68MCP
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NTE388 NTE68 NTE388 NPN 250W NTE68 NTE68MCP | |
TO202N
Abstract: NTE272 NTE273 ic 555 audio amplifiers
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NTE272 NTE273 200mA 500mA NTE273 O202N TO202N NTE272 ic 555 audio amplifiers | |
Complementary Darlington Audio Power Amplifier
Abstract: PNP Monolithic Transistor Pair ic 555 audio amplifiers npn darlington transistor 150 watts darlington complementary power amplifier NTE272 NTE273 application note ic 555
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NTE272 NTE273 200mA 500mA NTE273 O202N Complementary Darlington Audio Power Amplifier PNP Monolithic Transistor Pair ic 555 audio amplifiers npn darlington transistor 150 watts darlington complementary power amplifier NTE272 application note ic 555 | |
Contextual Info: NTE272 NPN & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications. |
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NTE272 NTE273 200mA 500mA NTE273 | |
NTE262
Abstract: NTE261 DARLINGTON 3A 100V npn
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NTE261 NTE262 100mA NTE262 NTE261 DARLINGTON 3A 100V npn | |
Contextual Info: FEATURES • WIDE SUPPLY RANGE — ±30V to ±100V • HIGH OUTPUT CURRENT— Up to 2A Continuous • VOLTAGE AND CURRENT GAIN • HIGH SLEW — 50V/JXS Minimum • PROGRAMMABLE OUTPUT CURRENT LIMIT • HIGH POWER BANDWIDTH — 160 kHz Minimum • LOW QUIESCENT CURRENT — 12mA Typical |
OCR Scan |
60K/2K PB50U | |
MB4213
Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
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SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD | |
2596
Abstract: BDS29A BDS29B BDS29C
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BDS29A BDS29B BDS29C 2596 BDS29A BDS29B BDS29C | |
Contextual Info: BDS29A BDS29B BDS29C MECHANICAL DATA Dimensions in mm 13.59 0.535 13.84 (0.545) COMPLEMENTARY POWER DARLINGTON TO254 METAL TRANSISTORS 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) |
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BDS29A BDS29B BDS29C | |
alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
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Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent | |
Contextual Info: NTE2363 NPN & NTE2364 (PNP) Silicon Complementary Transistors High Current General Purpose Amp/Switch Features: D Low Saturation Voltage D Large Current Capacity and Wide ASO Applications: D Power Supplies D Relay Drivers D Lamp Drivers D Automotive Wiring |
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NTE2363 NTE2364 | |
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NTE2364
Abstract: NTE2363
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NTE2363 NTE2364 NTE2364 NTE2363 | |
npn C 1740Contextual Info: BDS29A BDS29B BDS29C MECHANICAL DATA Dimensions in mm 13.59 0.535 13.84 (0.545) COMPLEMENTARY POWER DARLINGTON TO254 METAL TRANSISTORS 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) |
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BDS29A BDS29B BDS29C BDS29ASMD BDS29ASMD-JQR-B BDS29BSMD BDS29BSMD-JQR-B BDS29C npn C 1740 | |
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO – 92L 3DG8051 TRANSISTOR NPN 1. EMITTER 2. COLLECTOR FEATURES z General Purpose Switching Application z Complementary to 3CG8551 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) |
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O-92L 3DG8051 3CG8551 100MHz | |
2N6714
Abstract: 2N6726 2N6727 92GU51 92GU51A 30C40
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2N6714 15/92GU01, 92GU51 2N6726 -30-C-40) O-237 03r-Emitter 2N6726 -10mA, 2N6727 92GU51A 30C40 | |
Contextual Info: 108&3#0045&3".1-*'*&3 PB50 551888"1&9.*$305&$)$0. "1&9 M I C R O T E C H N O L O G Y FEATURES • WIDE SUPPLY RANGE — ±30V to ±100V • HIGH OUTPUT CURRENT — Up to 2A Continuous • VOLTAGE AND CURRENT GAIN • HIGH SLEW RATE — 50V/µs Minimum |
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PB50U | |
Contextual Info: FEATURES • • • • • • • WIDE SUPPLY RANGE — ±30V to ±100V HIGH OUTPUT CURRENT — Up to 2A Continuous VOLTAGE AND CURRENT GAIN HIGH SLEW RATE — 50V/|is Minimum PROGRAMMABLE OUTPUT CURRENT LIMIT HIGH POWER BANDWIDTH — 160 kHz Minimum LOW QUIESCENT CURRENT — 12mA Typical |
OCR Scan |
60K/2K PB50U 0DD2020 | |
Contextual Info: PB50 PB50 PB50 Power Booster Amplifier FEATURES • WIDE SUPPLY RANGE — ±30V to ±100V • HIGH OUTPUT CURRENT — Up to 2A Continuous • VOLTAGE AND CURRENT GAIN • HIGH SLEW RATE — 50V/µs Minimum • PROGRAMMABLE OUTPUT CURRENT LIMIT • HIGH POWER BANDWIDTH — 160 kHz Minimum |
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PB50U | |
Contextual Info: PB50 PB50 P r o d u PB50 c t IInnnnoovvaa t i o n FFr roomm Power Booster Amplifier FEATURES • WIDE SUPPLY RANGE — ±30V to ±100V • HIGH OUTPUT CURRENT — Up to 2A Continuous • VOLTAGE AND CURRENT GAIN • HIGH SLEW RATE — 50V/µs Minimum • PROGRAMMABLE OUTPUT CURRENT LIMIT |
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PB50U | |
Contextual Info: PB50 PB50 PB50 Power Booster Amplifier FEATURES • • • • • • • WIDE SUPPLY RANGE — ±30V to ±100V HIGH OUTPUT CURRENT — Up to 2A Continuous VOLTAGE AND CURRENT GAIN HIGH SLEW RATE — 50V/µs Minimum PROGRAMMABLE OUTPUT CURRENT LIMIT HIGH POWER BANDWIDTH — 160 kHz Minimum |
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PB50U | |
Contextual Info: • PB58A PB58PB58 • PB58A PB58, PB58A Power Booster Amplifier FEATURES • WIDE SUPPLY RANGE — ±15V to ±150V • HIGH OUTPUT CURRENT — 1.5A Continuous PB58 2.0A Continuous (PB58A) • VOLTAGE AND CURRENT GAIN • HIGH SLEW — 50V/µs Minimum (PB58) |
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PB58A PB58A) PB58U |