Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD BAS21 Preliminary DIODE GEN ERAL PU RPOSE DI ODES ̈ DESCRI PT I ON The UTC BAS21 is a general purpose diode using UTC’s planar technology to provide customers with high current capacity and high switching speed. ̈ FEAT U RES
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BAS21
BAS21
BAS21L-AE3-R
BAS21G-AE3-R
OT-23
QW-R601-040
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Untitled
Abstract: No abstract text available
Text: COMCHIP SMD Gen er al Purpose Bridge Rect ifier Diode SMD Diodes Specialist B01S-G B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features TO269AA MiniDIP -Rating to 1000V PRV. -Ideal for printed circuit board. 0.193 (4.90)
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B01S-G
B05S-G
B10S-G
O269AA
125grams.
QW-BBR01
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2010 4n35
Abstract: 4n35 4N35 circuits optocouplers 4n35
Text: 4N35 GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS 0.69 Opt. Page 1 of 1 Enter Your Part # Home Part Number: 4N35 Online Store 4N35 Diodes GEN ER A L Transistors PU R POS E 6 -PIN PH O TO T RA N SIS T OR OPT OC O U PLER S Integrated Circuits Optoelectronics
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com/4n35
2010 4n35
4n35
4N35 circuits
optocouplers 4n35
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NTC 2R5-S237
Abstract: 86H-5410B LFR2205B smd diode bc 2R5-S237 zener diode c18 st 86H-5410 atx 400w circuit schematic arcotronics mkp L6563
Text: EVAL6563-400W L6563 400 W FOT-controlled PFC pre-regulator Data Brief General description The board implements a 400 W, wide-range mains input, PFC pre-conditioner suitable for ATX PSU, flat screen displays, game console. The low-cost L6563 can be used at such power level thanks to fixed-off-time control. This
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EVAL6563-400W
L6563
AN2485.
EVAL6563-400W)
NTC 2R5-S237
86H-5410B
LFR2205B
smd diode bc
2R5-S237
zener diode c18 st
86H-5410
atx 400w circuit schematic
arcotronics mkp
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86H-5410
Abstract: LFR2205B arcotronics 1uf 450V MKP PQ40-500 delta 400w atx power supply capacitor 470nf 50v smd diode bc atx 400w circuit schematic 2R5-S237 EPCOS 470
Text: EVAL6563-400W L6563 400 W FOT-controlled PFC pre-regulator Data Brief General description The board implements a 400 W, wide-range mains input, PFC pre-conditioner suitable for ATX PSU, flat screen displays, game console. The low-cost L6563 can be used at such power level thanks to fixed-off-time control. This
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EVAL6563-400W
L6563
AN2485.
EVAL6563-400W)
2007n
86H-5410
LFR2205B
arcotronics 1uf 450V MKP
PQ40-500
delta 400w atx power supply
capacitor 470nf 50v
smd diode bc
atx 400w circuit schematic
2R5-S237
EPCOS 470
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Untitled
Abstract: No abstract text available
Text: ASSR-4110 and ASSR-4120 General Purpose, Form A, Solid State Relay 400V/0.12A/25Ω Data Sheet Description Features The ASSR-41x0 Series consists of an AlGaAs infrared light-emitting diode (LED) input stage optically coupled to a high-voltage output detector circuit. The
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ASSR-4110
ASSR-4120
00V/0
2A/25)
ASSR-41x0
ASSR-4120
AV01-0618EN
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mosfet based power inverter project
Abstract: MS 1307 mosfet mosfet ms 1307 mitsubishi sic MOSFET igbt based high frequency inverter 10KV SiC NATIONAL IGBT Mitsubishi SiC IPM module "silicon carbide" FET home made inverter
Text: Present PresentStatus StatusAnd AndFuture FutureProspects Prospectsof ofSiC SiCPower PowerDevices Devices Contributors : Gourab Majumdar Chief Engineer, Power Device Works, Mitsubishi Electric Corporation, Japan John Donlon Senior Application Engineer, Powerex Inc., U.S.A.
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ECG584 schottky
Abstract: diode ECG109 diode ecg 588 vat 2000 ge ECG575 Z3 DIODE ECG577 Z4 diode Diode ECG110A ECG113
Text: Diodes and R<£ctifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description ECG109 ECG110A Gen Purp Ge Gen Purp Ge 100 40 ECG110MP Matched Diode Pair Ge 30 ECG112 UHF Mixer (Schottky) Si Common Cathode Si Dual Diode, CenterTap TV Horiz ECG114
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ECG109
ECG110A
ECG110MP
ECG112
ECG113A
ECG114
ECG115
ECG592
ECG593
ECG694
ECG584 schottky
diode ECG109
diode ecg 588
vat 2000 ge
ECG575
Z3 DIODE
ECG577
Z4 diode
Diode ECG110A
ECG113
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DIODE SW-05
Abstract: No abstract text available
Text: DIODES & RECTIFIERS GENERAL PURPOSE Material Description and Application Case Style Dlag. No. Maximum Peak Reverse Voltage Volts pRV If !f s m VF Irr 109 Ge Gen Purp, Fast Switch D07 91 100 0.2 0.5 1 - 110MP Ge Gen Purp, AFC, Matched Diode Pair D07 91 40
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110MP
OT-23
200MHz
T0220
b43125T
0P03SSÃ
DIODE SW-05
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Untitled
Abstract: No abstract text available
Text: ß Semiconductor LM3045/LM3046/LM3086 Transistor Arrays General Description Features The LM3045, LM3046 and LM3086 each consist of five gen eral purpose silicon NPN transistors on a common mono lithic substrate. Two of the transistors are internally con
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LM3045/LM3046/LM3086
LM3045,
LM3046
LM3086
LM3045
14-lead
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LT111A
Abstract: No abstract text available
Text: uim TECHNOLOGY LT111A/LT311A LM111/LM311 Voltage Comparator F€OTUR€S DCSCfflPTIOn • ■ ■ ■ ■ ■ ■ The LT111A is an improved version of the LM 111 gen eral purpose comparator. These new devices offer maximum input offset voltage of 1.0mV and input off
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LT111A/LT311A
LM111/LM311
LT111A
250ns.
250nS
120ppm
30ppm
10ppm/
10kHz.
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fairchild 9314
Abstract: D type latch ScansUX986
Text: TTL/MSI 9314 QUAD LATCH DESC RIPTIO N — The MSI 9314 is a m u ltifu n ctio n a l 4 -B it Latch. The latch is designed fo r gen eral purpose storage applications in high speed digital systems. A ll inputs feature diode clamping to reduce negative line transients. A ll outputs have active p u ll-up c irc u itry to provide high capac
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LM311N-8
Abstract: LM311J-8 LM311J8 LM311T appli note LM311 T05M PLIC LT111X LT111A
Text: LT111A / L T 3 1 1A LM 111/LM311 / T u r m TECHNOLOGY V oltage C om parator F€flTUR€S D c s c n iP T io n • ■ ■ ■ ■ ■ ■ The LT111A is an improved version of the LM111 gen eral purpose comparator. These new devices offer maximum input offset voltage of 1.0mV and input off
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LT111A
111/LM311
LM111
250ns.
120ppm
30ppm
10ppm/
LM311N-8
LM311J-8
LM311J8
LM311T
appli note LM311
T05M
PLIC
LT111X
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YTS4403
Abstract: No abstract text available
Text: YTS4403 SILICON PNP EPITAXIAL TYPE U n i t in m m FOR GEN ERA L PURPOSE USE S WIT CHI NG AN D A MPL I F I E R +05 APPLICATIONS. FEATURES: •Low Leakage Current : IC E V = - 1 0 0 n A M a x . , Ig v = 1 0 0 n A ( M a x . ) @ V c e =-35V, V b e =0.4V • Excellent DC Current Gain Linearity
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YTS4403
-15raA
8G-59
500mA,
-150mA,
-500mA,
100MHz
20/iB
YTS4403
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D 92 M - 02 DIODE
Abstract: 110MP fast diode 1.5 A diode d07 Super matched pair 1a fast diode
Text: DIODES AND HECTII NTE Type No. Material Description and Application Case Style Diag. No. Maximum Average Forward Current Amps Max Peak Surge Forward Current (Amps) Maximum Forward Voltage Drop (Volts) Reverse Recovery Time (ns) P RV If If s m vF *fT 0.5
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110MP
Brid200
D027A
T0220
D 92 M - 02 DIODE
fast diode 1.5 A
diode d07
Super matched pair
1a fast diode
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Z6 DIODE
Abstract: z12 diode Z4 diode z11 diode diode ECG125 ECG555 ECG584 schottky ECG117A ecg125 diode ECG178MP
Text: PHILIPS E C 6 INC 54E ]> • bbS3ti2a Q00720S 535 m i Q G Diodes and Rectifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description Average Rectified Forward Current lO Max Forward Current Repetitive Peak IFRM Max Reverse Recovery Time trr
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ECG109
ECG110A
ECG110MP
ECG113A
ECG114
DO-27
ECG515
ECG551
ECG117A
ECG556
Z6 DIODE
z12 diode
Z4 diode
z11 diode
diode ECG125
ECG555
ECG584 schottky
ECG117A
ecg125 diode
ECG178MP
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diode ECG125
Abstract: CI 3060 elsys ECG113A ci 3060 ECG577 Z6 DIODE DIODE GENERAL PURPOSE DET 200 PRV SCR ECG117A ECG576 ECG584 schottky
Text: PHILIPS E C 6 INC 54E ]> • b b S 3 ti2a Q00720S 535 m i Q G Diodes and Rectifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description Average Rectified Forward Current lO Max Forward Current Repetitive Peak IFRM Max Reverse Recovery Time
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bb53R2fi
ECG109
ECG110A
ECG110MP
ECG113A
ECG114
1N415C
1N415E
1N416C
1N416E
diode ECG125
CI 3060 elsys
ci 3060
ECG577
Z6 DIODE
DIODE GENERAL PURPOSE DET 200 PRV SCR
ECG117A
ECG576
ECG584 schottky
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Philips ECG125
Abstract: t75 hv diode ecg125 diode ECG125 ECG605 Z6 DIODE ECG558 ECG156 ECG584 schottky ECG1151
Text: PHILIPS E C 6 INC 54E ]> • bbS3ti2a Q00720S 535 m i Q G Diodes and Rectifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description Average Rectified Forward Current lO Max Forward Current Repetitive Peak IFRM Max Reverse Recovery Time trr
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Q00720S
ECG109
ECG110A
ECG110MP
ECG112
ECG113A
72OLARITY
OT-23
SP-92
ECG615A
Philips ECG125
t75 hv diode
ecg125 diode
ECG125
ECG605
Z6 DIODE
ECG558
ECG156
ECG584 schottky
ECG1151
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BFW12
Abstract: bc264c BFT46
Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs N-CHANNEL JUNCTION FETS FOR AMPLIFIERS rating type number characteristics ± V DS max. ’d ss Ciss typ. c rss l v f s l 1 pF) typ.
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PMBFJ308
PMBFJ309
PMBFJ310
PMBF4416
PMBF4416A
PMBF5484
PMBF5485
PMBF5486
BFW12
bc264c
BFT46
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logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
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TDA1510
TDA1510A
logos 4012B
1LB553
Rauland ETS-003
Silec Semiconductors
MCP 7833
4057A
transistor sr52
74c912
1TK552
74S485
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metal rectifier diode
Abstract: DIODE S2E D026 110MP Super matched pair d041 12 pulse diode rectifier D07 15 diode diode d07 104 FAST RECOVERY DIODE 1A
Text: N T E ELECTRONICS TNC S2E D • b 4 3 1 2 S e G Q Q 2 b 3 S ‘H S H N T E T~Ö I - 0 I r I.CHbw .ü t N C r f A L ,r : U B r U O E — T-39-01 Maximum Average Forward Currant Ampe) Max Peek Surge Forward Currant (Ampe) Maximum Forward Vortage Drop (Volts)
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b4312Sel
110MP
100pA
T0220
metal rectifier diode
DIODE S2E
D026
Super matched pair
d041
12 pulse diode rectifier
D07 15 diode
diode d07 104
FAST RECOVERY DIODE 1A
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DIODE S2E
Abstract: No abstract text available
Text: N T E ELE CTRONICS TNC — S2E D • I r I . C H bw .ü b 4 3 1 2 S e GQQ2b3S ‘H S H N T E t N C r f A L ,r : U B r U T-39-01 Maxim um Average Forw ard Currant Ampe) Max Peek Surge Forw ard Currant (Ampe) Maxim um Forward Vortage Drop (Volts) R ecovery
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T-39-01
110MP
100pA
T0220
OT-23
DIODE S2E
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TF 450
Abstract: No abstract text available
Text: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Case Style Diag. No. Maximum Collector Current (Amps) BVceo BVebo h FE Pd fT T0218
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T0218
NTE2305)
T0220
TF 450
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erc12 diode
Abstract: marking A7 ERC12 DIODE A46 marking A46 general purpose diode marking code -06 general purpose diode marking code -08
Text: ERC12 i.2A I Outline D raw ings - M t M m m ? * * - k _ GEN ERAL USE R EC TIFIER DIODE -w¿3 5. — 28MIN — /Q 8 20MIN — : Features • •0— Hi gh surge current • 'JV£ M $ A • f f if flfit t ■ S /jv i Marking Compact size, lightweight
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ERC12
28MIN
erc12 diode
marking A7
DIODE A46
marking A46
general purpose diode marking code -06
general purpose diode marking code -08
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