GEE TRANSISTOR Search Results

Contextual Info: KSC2756 NPN EPITAXIAL SILICON TRANSISTOR MIXER FOR VHF TV TUNER S O T -2 3 • HIGH Gee Typi 23dB ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation

Contextual Info: TOSHIBA 2SC4250 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL PLANAR TYPE 2SC4250 TV VHF M IXER APPLICATIONS • High Conversion Gain : Gee = 25dB Typ. • Low Reverse Transfer Capacitance : Cre —0 ,45pF (Typ.) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

58m transistor

Contextual Info: KSC2756 NPN EPITAXIAL SILICON TRANSISTOR MIXER FOR VHF TV TUNER . HIGH Gee Typ. 23dB ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol Col lector-Base Voltage C ollector-E m ltter Voltage V Em itter-Base Voltage C ollector C urrent V Rating Unit

Contextual Info: A HIGH-DENSITY DUAL-POLYSILICON 5 VOLT-ONLY EEPROM CELL R. Lambertson, A. Malazgirt, C. Lo, A. Vahidimowlavi, P. Holland, M. Fliesler, H. Gee Xicor Inc, 851 Buckeye Court, Milpitas, California, 95035 ABSTRACT In this paper a novel full-function EEPROM cell

IRF 4145

Abstract: KSC2756 marking uma samsung tv gee transistor
Contextual Info: AMSUN6 SEMICONDUCTOR INC KSC2756 14E D | 7^4142 QOOb^k 2 | NPN EPITAXIAL SILICON TRANSISTOR T -3 1 -1 5 MIXER FOR VHF TV TUNER SOT-23 • HIGH Gee lÿp. 23d8 ABSOLUTE MAXIMUM RATINGS (T8=25°C) Characteristic • Rating Symbol Collector-Base Voltage Coiector-Emitter Voltage

71/10VZ/

Contextual Info: TURRET TERMINAL BOARDS • SAVE TOOLING • ECONOMICAL • COMPLETE RANGE OF SIZES BOARDS ON THIS PAGE ARE NOT SCORED Readi-Made Terminal Boards: Low cost, meets commercial and military specifications. Produced in large quantities, making it possible to eliminate tooling and setup charges usually applied

Contextual Info: TURRET TERMINAL ROARDS m MINIATURE TURRET TERMINAL BOARDS Terminals: Brass,ASTM-B16. Terminals are staked in all holes except end mounting holes. '^ Plating: Hot Tin Dipped, MIL-T-10727. Recommended for longer shelf life and better solderability. Other plating can be furnished.

MIL-F-14072

Abstract: 15408 L-P-513 LP-513 ASTM-B16 MIL-T-10727 MIL-I-24768 q 1257
Contextual Info: R TI F I ED TURRET TERMINAL BOARDS 2 T Y CE 900 ISO Q I UAL MINIATURE TURRET TERMINAL BOARDS Terminals: Brass, ASTM-B16. Terminals are staked in all holes except end mounting holes. Plating: Hot Tin Dipped, MIL-T-10727. Recommended for longer shelf life and better solderability. Other plating can be furnished.

Contextual Info: MITSUBISHI HVIGBT MODULES CM800HB-50H U°mePa,a soW HIGH POWER SWITCHING USE INSULATED TYPE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules A PPLIC A TIO N Inverters, Converters, DC choppers, Induction heating, DC to DC converters.

2sc1965

Abstract: 2SC1965A transistor 6w
Contextual Info: 1=24^02=] 0017537 MITSUBISHI RF POWER TRANSISTOR 30T 2SC1965A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 1 96 5A is a silicon NPN epitaxial planar type transistor Dimension in mm designed for industrial use RF power amplifiers on VHF band 0 8 .5 O M A X

ptb2011

Contextual Info: ERICSSON $ PTB 2011 0 50 Watts, 500-1000 MHz UHF Broadband Power Transistor Prelim inary Description Key Features The 20110 is a class AB, NPN, common emitter RF Power Tran­ sistor intended for 28 VDC operation across 500 -1000 MHz fre­ quency band. It is rated at 50 Watts minimum output power and

Contextual Info: 2SC3123 TO SHIBA 2 S C312 3 TOSHIBA TRANSISTOR TV VHF M IXER APPLICATIONS • • SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm + 0.5 2.5-0.3 High Conversion Gain : Gce = 23dB Typ. Low Reverse Transfer Capacitance : Cre = 0.4pF (Typ.) + 0.25 .1 .5 -0 .1 5 .

transistor C 639 W

Abstract: transistor 639 BC 639 transistor transistor BC 639 transistor BC 637 Transistor S 637 T transistor BC 639 c transistor BC 635 transistor bc 100 bc 639
Contextual Info: BC 635 BC 637 NPN S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR NPN S ILIC IU M , P LAN A R E P IT A X IA L BC 639 Compì, of BC 636, BC 638, BC 640 - Driver stages of audio amplifiers Etages "D rive rs" d'amplificateurs BF 'CEO h21E 150m A

5948A

Abstract: 100L 2SC4245 marking L4 800mhz transistor MURATA TTA23A100
Contextual Info: T O S H IB A 2SC4245 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4245 Unit in mm TV TUNER, UHF MIXER APPLICATIONS. VHF-UHF BAND RF AMPLIFIER APPLICATIONS. 2.1 ±0.1 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage

pin diagram for IC 7473

Abstract: pin DIAGRAM OF IC 7473 74LS73D pin diagram of 7473 7473PC ic 7473 pin diagram IC 7473 fan out 74ls73 IC 74LS73 74LS73 dual JK
Contextual Info: ' NATIONAL SENICOND {LOGIO DEE D | b S D l l S E OOfc.3712 7 | 73 r-¥ù-o7'0r CO N N ECTIO N DIAGRAM PIN O UT A 54/7473 54H/74H73 54LS/74LS73 DUAL JK FLIP-FLOP W ith S ep arate Clears and Clocks D ESC R IP TIO N — The ’73 and 'H73 dual J K master/slave flip-flops have a

2SC3120

Contextual Info: 2SC3120 TOSHIBA 2 S C 3 1 20 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV TUNER, UHF MIXER APPLICATIONS VHF ~ UHF B A N D RF AMPLIFIER APPLICATIONS + 0.5 M A X IM U M RATINGS Ta = 25°C SYMBOL VCBO VCEO v EBO ic Ib Pc Tj CHARACTERISTIC

Contextual Info: 2SC3120 TOSHIBA 2 S C312 0 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV TUNER, UHF MIXER APPLICATIONS VHF ~ UHF B AN D RF AMPLIFIER APPLICATIONS + 0.5 2 .5 - 0 .3 + 0.25 .1 .5 - 0 .1 5 . 3- M A X IM U M RATINGS Ta = 25°C SYMBOL VCBO

MURATA TTA23A100

Contextual Info: TO SHIBA 2SC4245 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4245 U nit in mm TV TUNER, UHF M IXER APPLICATIONS VHF—UHF BAND RF AM PLIFIER APPLICATIONS 2.1 ± 0.1 1.25t 0.1 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage

Contextual Info: SAMSUNG SEMI CONDUCTOR INC MPSH24 14E D §7*14,41*45 0007337 fl J NPN EPITAXIAL SILICON TRANSISTOR T-31-19 VHF TRANSISTOR ABSOLUTE M AXIM UM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage CoUector-Emitter Voltage Emitter-Base Voltage Collector Current

J551

Abstract: TS 4142 MPSH20 MPSH24 S1000 sc 4145 276MH 4142 TS I10M1 213M1
Contextual Info: .SAMSUNG SEM ICO NDUCTOR INC 14E D | TTbMlME 0007304 S J MPSH20 7^3/- NPN EPITAXIAL SILICON TRANSISTOR VHF TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voftage Emitter-Base Voltage Collector Current

2SC4245

Contextual Info: TO SH IBA 2SC4245 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4245 TV TUNER, UHF MIXER APPLICATIONS U n it in mm V H F -U H F BAND RF AMPLIFIER APPLICATIONS 2.1 ¿ 0.1 |1 .2 5 i0 .1 | MAXIMUM RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Collector-Base Voltage

IRGAC50U

Abstract: transistor G46 IGBT g48 ge 142 bt 34w
Contextual Info: International Rectifier PD-9.726A IRGAC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

Contextual Info: J amer philips /discrete ObE D • 001S1DS 1 bhS3T31 y PTB32001X PTB32003X PTB32005X v i T T - 3 3 - o '? MICROWAVE POWER TRANSISTORS N-P-N silicon transistors fo r use in common-base class-B power amplifiers up to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide

IRGMC50F

Abstract: IRGMC50FD IRGMC50FU 39AF
Contextual Info: International S S Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while