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    GE2 TRANSISTOR Search Results

    GE2 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GE2 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


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    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES □ Dual, Low Noise Wideband Variable Gain Amplifiers AD600/AD602 1.1 Scope. This specification covers the detail requirements for monolithic, dual-channel variable gain amplifiers for gain ranges of 0 dB to +40 dB AD600 and -1 0 dB to +30 dB (AD602).


    OCR Scan     		PDF AD600/AD602 AD600) AD602) AD600SQ/883B AD602SQ/883B AD600 AD602, MIL-STD-883

    Untitled

    Abstract: No abstract text available
    Text: m W E R E X QIS0660001 Powerex Inc., 200 Hillis St., Youngwood, PA 15697 724 925-7272 Single IGBT H-Series Hermetic Module 600 Amperes/600 Volts Description: .r" Powerex IGBT Hermetic modules are designed for use in switching applications. Each Module consists of two IGBT transistors


    OCR Scan     		PDF QIS0660001 Amperes/600

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM150DU-24H HIGH POWER SWITCHING USE INSULATED TYPE T q Measured Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­


    OCR Scan     		PDF CM150DU-24H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM200DU-24H HIGH POWER SWITCHING USE INSULATED TYPE T q Measured Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­


    OCR Scan     		PDF CM200DU-24H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM400DU-12H HIGH POWER SWITCHING USE INSULATED TYPE T q Measured Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­


    OCR Scan     		PDF CM400DU-12H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM300DU-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configura­ tion with each transistor having a


    OCR Scan     		PDF CM300DU-24H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM75DU-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­


    OCR Scan     		PDF CM75DU-24H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM50TU-24H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor


    OCR Scan     		PDF CM50TU-24H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM100DU-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­


    OCR Scan     		PDF CM100DU-24H -200A/

    CM75DU-24H

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM75DU-24H HIGH POW ER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a re­


    OCR Scan     		PDF CM75DU-24H ---150A/ CM75DU-24H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM350DU-5F HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching appli­ cations. Each module consists of two IGBTs in a half-bridge configu­ ration with each transistor having


    OCR Scan     		PDF CM350DU-5F

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM150DU-12H HIGH POWER SWITCHING USE INSULATED TYPE Tc Measured Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­


    OCR Scan     		PDF CM150DU-12H

    transistor LT 028

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM50TF-28H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are d e ­ signed fo r use in sw itching a pp li­ cations. Each m odule consists of six IGBTs in a three phase bridge configuration, w ith each transistor


    OCR Scan     		PDF CM50TF-28H transistor LT 028

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM75DY-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­


    OCR Scan     		PDF CM75DY-12H -150A

    CM100DY-24H

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM100DY-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching appli­ cations. Each module consists of two IGBTs in a half-bridge configu­ ration with each transistor having a


    OCR Scan     		PDF CM100DY-24H -200A/ CM100DY-24H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM50TF-28H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching appli­ cations. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor


    OCR Scan     		PDF CM50TF-28H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM50DY-12H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge con­ figuration with each transistor hav­


    OCR Scan     		PDF CM50DY-12H -100A/

    Untitled

    Abstract: No abstract text available
    Text: m u m Ê X QIR0620001 IGBT H-Series Chopper Module 200/300 Amperes/600 Volts Powerex Inc., 200 Hillis St., Youngwood, PA 15697 724 925-7272 Description: Powerex IGBT modules are designed for use in switching applications. Each Module consists of one IGBT


    OCR Scan     		PDF QIR0620001 Amperes/600

    GE2 TRANSISTOR

    Abstract: Transistor BSX 95 CM1200HA-24H
    Text: m M BSX CM1200HA-24H Tentative Powerex, Inc., 200 Hillls Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Single IGBTMOD H-Series Module 1200 Amperes/1200 Volts Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists


    OCR Scan     		PDF CM1200HA-24H Amperes/1200 135ns) 20-25kHz) -2400A//iS -2400A//IS GE2 TRANSISTOR Transistor BSX 95

    IGBT Transistors

    Abstract: QID0630001
    Text: m W EREX QID0630001 Dual IGBT H-Series Hermetic Module 300 Amperes/600 Volts Powerex Inc., 200 Hillis St., Youngwood, PA 15697 724 925-7272 Description: Powerex IGBT Hermetic modules are designed for use in switching applications. Each Module consists of


    OCR Scan     		PDF QID0630001 Amperes/600 IGBT Transistors QID0630001

    Untitled

    Abstract: No abstract text available
    Text: CM50DY-28H Powerex, Inc., 200Hlllis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 DUSl IGBTMOD H-Series Module 50 Amperes/1400 Volts Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists


    OCR Scan     		PDF CM50DY-28H 200Hlllis Amperes/1400 135ns) 72T4b21

    D2L DIODE

    Abstract: GE2 TRANSISTOR d2l2 diode d2l
    Text: HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE p^ sm l Y V *4 MULTI PHOTOCOUPLER SERIES FEATURES_ DESCRIPTION_ • PS2502-1, -2, -4 and PS2502L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode and an NPN


    OCR Scan     		PDF PS2502-1, PS2502L-1, PS2502L-2 PS2502L-1 PS2502L-4 D2L DIODE GE2 TRANSISTOR d2l2 diode d2l