GE2 TRANSISTOR Search Results

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

Contextual Info: ANALOG DEVICES □ Dual, Low Noise Wideband Variable Gain Amplifiers AD600/AD602 1.1 Scope. This specification covers the detail requirements for monolithic, dual-channel variable gain amplifiers for gain ranges of 0 dB to +40 dB AD600 and -1 0 dB to +30 dB (AD602).

Contextual Info: m W E R E X QIS0660001 Powerex Inc., 200 Hillis St., Youngwood, PA 15697 724 925-7272 Single IGBT H-Series Hermetic Module 600 Amperes/600 Volts Description: .r" Powerex IGBT Hermetic modules are designed for use in switching applications. Each Module consists of two IGBT transistors

Contextual Info: MITSUBISHI IGBT MODULES CM150DU-24H HIGH POWER SWITCHING USE INSULATED TYPE T q Measured Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­

Contextual Info: MITSUBISHI IGBT MODULES CM200DU-24H HIGH POWER SWITCHING USE INSULATED TYPE T q Measured Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­

Contextual Info: MITSUBISHI IGBT MODULES CM400DU-12H HIGH POWER SWITCHING USE INSULATED TYPE T q Measured Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­

Contextual Info: MITSUBISHI IGBT MODULES CM300DU-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configura­ tion with each transistor having a

Contextual Info: MITSUBISHI IGBT MODULES CM75DU-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­

Contextual Info: MITSUBISHI IGBT MODULES CM50TU-24H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor

Contextual Info: MITSUBISHI IGBT MODULES CM100DU-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­

CM75DU-24H

Contextual Info: MITSUBISHI IGBT MODULES CM75DU-24H HIGH POW ER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a re­

Contextual Info: MITSUBISHI IGBT MODULES CM350DU-5F HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching appli­ cations. Each module consists of two IGBTs in a half-bridge configu­ ration with each transistor having

Contextual Info: MITSUBISHI IGBT MODULES CM150DU-12H HIGH POWER SWITCHING USE INSULATED TYPE Tc Measured Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­

transistor LT 028

Contextual Info: MITSUBISHI IGBT MODULES CM50TF-28H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are d e ­ signed fo r use in sw itching a pp li­ cations. Each m odule consists of six IGBTs in a three phase bridge configuration, w ith each transistor

Contextual Info: MITSUBISHI IGBT MODULES CM75DY-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­

CM100DY-24H

Contextual Info: MITSUBISHI IGBT MODULES CM100DY-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching appli­ cations. Each module consists of two IGBTs in a half-bridge configu­ ration with each transistor having a

Contextual Info: MITSUBISHI IGBT MODULES CM50TF-28H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching appli­ cations. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor

Contextual Info: MITSUBISHI IGBT MODULES CM50DY-12H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge con­ figuration with each transistor hav­

Contextual Info: m u m Ê X QIR0620001 IGBT H-Series Chopper Module 200/300 Amperes/600 Volts Powerex Inc., 200 Hillis St., Youngwood, PA 15697 724 925-7272 Description: Powerex IGBT modules are designed for use in switching applications. Each Module consists of one IGBT

GE2 TRANSISTOR

Abstract: Transistor BSX 95 CM1200HA-24H
Contextual Info: m M BSX CM1200HA-24H Tentative Powerex, Inc., 200 Hillls Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Single IGBTMOD H-Series Module 1200 Amperes/1200 Volts Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists

IGBT Transistors

Abstract: QID0630001
Contextual Info: m W EREX QID0630001 Dual IGBT H-Series Hermetic Module 300 Amperes/600 Volts Powerex Inc., 200 Hillis St., Youngwood, PA 15697 724 925-7272 Description: Powerex IGBT Hermetic modules are designed for use in switching applications. Each Module consists of

Contextual Info: CM50DY-28H Powerex, Inc., 200Hlllis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 DUSl IGBTMOD H-Series Module 50 Amperes/1400 Volts Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists

D2L DIODE

Abstract: GE2 TRANSISTOR d2l2 diode d2l
Contextual Info: HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE p^ sm l Y V *4 MULTI PHOTOCOUPLER SERIES FEATURES_ DESCRIPTION_ • PS2502-1, -2, -4 and PS2502L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode and an NPN