GE-14 TRANSISTOR Search Results

ge-20 transistor

Abstract: ge-10 transistor transistor DJ marking transistor DJ 30 at GE Sensing Transistor GE 67 DJ marking DJ5GE GE-17 diagrams
Contextual Info: Proximity Sensors Inductive Nickel-plated Brass Housing Types DJ, M 14, PG 21 • Nickel-plated brass housing, cylindrical • Diameter: M 14, PG 21 • Sensing distance: 2 to 6 mm • Power supply: DJ 2 GE 24 VDC DJ 5 GE 24 VDC DJ 6 GE 10 to 40 VDC • Output: Transistor NPN, make switching

S5 100 B112 MT RELAY

Abstract: AMP A047 CONNECTOR VAT300 relay S5 100 B112 transistor b605 A 92 B331 transistor S5 100 B112 RELAY 9F52 transistor b686 A 42 B331 transistor
Contextual Info: Cover VAT300 quick guide 14-09-2007 10:37 Page 1 GE Consumer & Industrial Power Protection GE Consumer & Industrial GE POWER CONTROLS Hornhouse Lane Knowsley Industrial Park Liverpool L33 7YQ VAT300 - User Manual GE POWER CONTROLS IBERICA Marqués de Comillas 1

GE thyristor

Abstract: ge-2 transistor DR-6 GE DR6GE Transistor GE 67 ge-10 transistor proximity capactive sensor GE power SCR DR3GE Ge NPN
Contextual Info: Proximity Sensors Capacitive Steel Housing Types DR GE, M 14, PG 21, 13/8" • Steel housing, cylindrical • Diameter: M 14, PG 21, 1 3/8" • Sensing distance: 3 to 10 mm • Power supply: 10 to 27 VDC 90 to 240 VAC • LED-indication for output ON AC types

BCV72

Abstract: BCV71
Contextual Info: BCV71 BCV72 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BCV71 = K 7 BCV72 = K8 PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN mm _3.0_ 2.8 0 .14 0.48 0.38 3 Pin configuration 2.6 1 = BASE 2.4 2 = EMITTER 3 = COLLECTOR J ’ I _1.02_J

Contextual Info: B10067 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)80â V(BR)CBO (V) I(C) Max. (A)14 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC)125õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 440C-E Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)50 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)14 Maximum Operating Temp (øC)100þ I(CBO) Max. (A)500uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

74AC14SC

Abstract: "Inverter Gates" AC14 H123 74AC14 74AC14MTC 74AC14PC 74AC14SJ M14A M14D
Contextual Info: S E M ¡C O N D U C T O R D • Revised iO Q o D ecem k ber 1998 TM 74AC14 Hex Inverter with Schmitt Trigger Input General Description T h e AC14 contains six inverter gates each w ith a Schm itt trig ge r input. The AC 14 contains six logic inverters which

Contextual Info: 19-1476; Rev 0; 4/99 Low -Pow e r, Se ria l, 1 4 -Bit DACs w it h Forc e /Se nse Volt a ge Out put The MAX5171/MAX5173 low-power, serial, voltage-output, 14-bit digital-to-analog converters DACs feature a precision output amplifier in a space-saving 16-pin QSOP

MAX544ACPA

Contextual Info: 19-1088; Rev 2; Q/96 A I / X I A I +5V, Serial-Input, Voltage-Output, 14-Bit DACs The DAC output range is 0V to V ref . For bipolar opera­ tion, m atched scaling resistors are provided in the MAX545 for use with an external precision op amp such as the MAX400 ge nerating a ±V ref output

74AC14SC

Abstract: 74AC14 74AC14MTC 74AC14SJ 74ACT14 M14A M14D MTC14
Contextual Info: Revised D ecem ber 1999 S E M I C O N D U C T O R TM 74AC14 • 74ACT14 Hex Inverter with Schmitt Trigger Input General Description Features The 74A C 14 and 74A C T14 contain six inverter gates each w ith a S chm itt trig ge r input. T hey are capable of tra n sfo rm ­

74ACTQ14

Abstract: 74ACTQ14PC 74ACTQ14SC ACTQ14 M14A MS-001 N14A
Contextual Info: Revised D ecem ber 1998 S E M I C O N D U C T O R TM 74ACTQ14 Quiet Series Hex Inverter with Schmitt Trigger Input General Description T he AC TQ 14 contains six inverter gates each with a S chm itt trig ge r input. They are capable o f transform ing slow ly changing input signals into sharply defined, jitte r­

igbt 20A 1200v

Abstract: 035H HF40D120ACE IRGP20B120U-EP IRGP30B120KD-E
Contextual Info: PD- 95897 IRGP20B120U-EP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • UltraFast Non Punch Through NPT Technology • 10 µs Short Circuit capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Extended lead TO-247 package

1401-1407

Abstract: 2N1424 GT123 TIP04 2N5577 2N5579 MD38 2sc179 data
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. t - 40°c k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT

78m5

Abstract: PT2622 2N1841 5U100 2sc180 2N2340 S552 TO114 package 2SC23 2SC24
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

Contextual Info: PD- 95897 IRGP20B120U-EP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • UltraFast Non Punch Through NPT Technology • 10 µs Short Circuit capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Extended lead TO-247 package

GT123

Abstract: 2N2342 2SB123 transistor AD166 ST615 2sc180 dts105 2N234 2N235 2N285
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT

NKT 275 transistor

Abstract: 2N6135 MD14 package
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

2N1029

Abstract: 2N2211 MP2145 mp2143 2SB237 2n1030 2N115 MP2143A MP2144 MP2144A
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

STC1015E

Abstract: DTS104 ASY82 DTS103 DTS106 DTS108 NKT12
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

Contextual Info: PD- 95238 IRGP30B120KD-EP Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 µs Short Circuit Capability

035H

Abstract: IRGP30B120KD-E IRGP30B120KD-EP
Contextual Info: PD- 95238 IRGP30B120KD-EP Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 µs Short Circuit Capability

IRGP30B120KD-EP

Abstract: ir igbt 1200V 40A 035H IRGP30B120KD-E
Contextual Info: PD- 95238 IRGP30B120KD-EP Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 µs Short Circuit Capability

motor IG 2200 19 x 00 15 r

Abstract: 12v dc motor IG 2200 19
Contextual Info: PD- 93818 IRGP30B120KD-E Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 µs Short Circuit Capability

600V 25A Ultrafast Diode

Abstract: GE power diode IC OZ 9936 in 4436 Ir 900v 60a ir igbt 1200V 40A 035H IRGP30B120KD-E PW80 irgp30b120
Contextual Info: PD- 93818A IRGP30B120KD-E Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 s Short Circuit Capability