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    GE-10 TRANSISTOR Search Results

    GE-10 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    GE-10 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    S5 100 B112 MT RELAY

    Abstract: AMP A047 CONNECTOR VAT300 relay S5 100 B112 transistor b605 A 92 B331 transistor S5 100 B112 RELAY 9F52 transistor b686 A 42 B331 transistor
    Text: Cover VAT300 quick guide 14-09-2007 10:37 Page 1 GE Consumer & Industrial Power Protection GE Consumer & Industrial GE POWER CONTROLS Hornhouse Lane Knowsley Industrial Park Liverpool L33 7YQ VAT300 - User Manual GE POWER CONTROLS IBERICA Marqués de Comillas 1


    Original     		VAT300 VAT300, ST-3450C E-08225 D-50677 F-93601 I-20092 B-9000 C/4566/E S5 100 B112 MT RELAY AMP A047 CONNECTOR VAT300 relay S5 100 B112 transistor b605 A 92 B331 transistor S5 100 B112 RELAY 9F52 transistor b686 A 42 B331 transistor PDF

    ge-20 transistor

    Abstract: ge-10 transistor transistor DJ marking transistor DJ 30 at GE Sensing Transistor GE 67 DJ marking DJ5GE GE-17 diagrams
    Text: Proximity Sensors Inductive Nickel-plated Brass Housing Types DJ, M 14, PG 21 • Nickel-plated brass housing, cylindrical • Diameter: M 14, PG 21 • Sensing distance: 2 to 6 mm • Power supply: DJ 2 GE 24 VDC DJ 5 GE 24 VDC DJ 6 GE 10 to 40 VDC • Output: Transistor NPN, make switching


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1010 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)10 I(C) Max. (A)2.0m Absolute Max. Power Diss. (W)20m Maximum Operating Temp (øC)55õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original     		2N1010 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1176 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)10ã V(BR)CBO (V)10 I(C) Max. (A)300m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)85þ I(CBO) Max. (A)25u @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original     		2N1176 PDF

    IRGBC30MD2

    Abstract: No abstract text available
    Text: PD - 9.1108 IRGBC30MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses


    Original     		IRGBC30MD2 10kHz) O-220AB C-364 IRGBC30MD2 PDF

    c845

    Abstract: c846 transistor D-12 IRGBC30K C-844
    Text: PD - 9.1071 IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz


    Original     		IRGBC30K O-220AB C-848 c845 c846 transistor D-12 IRGBC30K C-844 PDF

    transistor c900

    Abstract: c897 c901 transistor transistor c904 transistor c903 C899 C9-03 transistor c902 LTA 902 TE 901
    Text: PD - 9.1105 IRGBC20KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses


    Original     		IRGBC20KD2 O-220AB C-904 transistor c900 c897 c901 transistor transistor c904 transistor c903 C899 C9-03 transistor c902 LTA 902 TE 901 PDF

    c839 transistor

    Abstract: c838 transistor transistor C839 c841 transistor C839 C838 C837 c841 C839 J TRANSISTOR c842
    Text: PD - 9.1128 IRGBC20K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz


    Original     		IRGBC20K O-220AB C-842 c839 transistor c838 transistor transistor C839 c841 transistor C839 C838 C837 c841 C839 J TRANSISTOR c842 PDF

    c838 transistor

    Abstract: transistor C839 c839 D-12 IRGBC20K C842 c839 transistor gc 840 C838
    Text: PD - 9.1128 IRGBC20K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz


    Original     		IRGBC20K O-220AB C-842 c838 transistor transistor C839 c839 D-12 IRGBC20K C842 c839 transistor gc 840 C838 PDF

    transistor c900

    Abstract: transistor c904 IRGBC20KD2 c897 C901 transistor c903 c901 transistor
    Text: PD - 9.1105 IRGBC20KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses


    Original     		IRGBC20KD2 O-220AB C-904 transistor c900 transistor c904 IRGBC20KD2 c897 C901 transistor c903 c901 transistor PDF

    IRGBC30MD2

    Abstract: No abstract text available
    Text: PD - 9.1108 IRGBC30MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses


    Original     		IRGBC30MD2 10kHz) O-220AB C-364 IRGBC30MD2 PDF

    transistor c388

    Abstract: transistor C383 a 381 c C-388 IRGPC20MD2
    Text: PD - 9.1144 IRGPC20MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses


    Original     		IRGPC20MD2 10kHz) O-247AC C-388 transistor c388 transistor C383 a 381 c C-388 IRGPC20MD2 PDF

    c845

    Abstract: C847 c846 transistor C-843 C844 D-12 IRGBC30K c844 g C-844 C847 RECTIFIER
    Text: PD - 9.1071 IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz


    Original     		IRGBC30K O-220AB C-848 c845 C847 c846 transistor C-843 C844 D-12 IRGBC30K c844 g C-844 C847 RECTIFIER PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N394 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)10 I(C) Max. (A)200m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)6.0 @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain.20 h(FE) Max. Current gain.150


    Original     		2N394 PDF

    IRGPC40MD2

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1084 IRGPC40MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V


    Original     		IRGPC40MD2 10kHz) O-247AC C-398 IRGPC40MD2 PDF

    g10 smd transistor

    Abstract: transistor c347 SMD Transistor g10 C348 gFE smd diode AN-994 D-12 IRGBC40M-S SMD-220 c347 transistor
    Text: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1135 IRGBC40M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses


    Original     		IRGBC40M-S 10kHz) SMD-220 C-348 g10 smd transistor transistor c347 SMD Transistor g10 C348 gFE smd diode AN-994 D-12 IRGBC40M-S c347 transistor PDF

    transistor C372

    Abstract: c372 transistor transistor C368 c371 transistor AN-994 IRGBC20MD2-S SMD-220 C-366 C369 transistor c369
    Text: PD - 9.1141 IRGBC20MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT C Features VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses


    Original     		IRGBC20MD2-S 10kHz) SMD-220 C-372 transistor C372 c372 transistor transistor C368 c371 transistor AN-994 IRGBC20MD2-S SMD-220 C-366 C369 transistor c369 PDF

    c337 transistor

    Abstract: c338 transistor transistor c337 C337 w 79 C336 SMD C339 transistor c338 c336 transistors g10 smd transistor Transistor c340
    Text: PD - 9.1131A IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to


    Original     		IRGBC20M-S 10kHz) SMD-220 C-340 c337 transistor c338 transistor transistor c337 C337 w 79 C336 SMD C339 transistor c338 c336 transistors g10 smd transistor Transistor c340 PDF

    c328 transistor

    Abstract: C327 IRGPC40M C327 - 25
    Text: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1078 IRGPC40M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses


    Original     		IRGPC40M 10kHz) O-247AC C-328 c328 transistor C327 IRGPC40M C327 - 25 PDF

    IRGPH30MD2

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1115 IRGPH30MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 1200V • Short circuit rated -10µs @125°C, V GE = 15V


    Original     		IRGPH30MD2 10kHz) O-247AC C-478 IRGPH30MD2 PDF

    IRGPH40MD2

    Abstract: C479
    Text: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1118 IRGPH40MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 1200V • Short circuit rated -10µs @125°C, V GE = 15V


    Original     		IRGPH40MD2 10kHz) O-247AC C-480 IRGPH40MD2 C479 PDF

    ge d44h11

    Abstract: D44* general electric npn to-220 D44H5 D44Hll D44H1 D44H2 D44H4 D44H7 D44H8 D45H1
    Text: SILICON POWER TRANSISTORS 229 KP COMPLEMENTARY - 10 AMPERES Pt T c = 2 5°C GE Type NPN V CEO Min. V •c Cont. (A I 50 30 50 PNP M in. M in. 10 35 20 -3 0 -1 0 35 20 50 30 10 60 40 50 —30 ■10 60 40 50 45 10 35 20 <W) D44H1 - D45H1 D 44 H 2 - D 45H 2


    OCR Scan     		D44H1 D45H1 D44H2 D45H2 D44H4 D45H4 D44H5 D45H5 D44H7 D45H7 ge d44h11 D44* general electric npn to-220 D44Hll D44H1 D44H2 D44H4 D44H7 D44H8 PDF

    A9 npn

    Abstract: GES93 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) 10 10 10 10 2 •BaBB B B i» « ¡■ M l ■ M M ■ ■ ■ I 300 350 250 300 300 25 ?.5 2.5 2.5 2.5 200


    OCR Scan     		2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 A9 npn GES93 PDF

    ge d45h11

    Abstract: GE D45H2 ge d44h11 D44H8 D44H5 D45H2 D44H1 D44H2 transistor d44h11 D44H7
    Text: SILICON POWER TRANSISTORS 229 KP COMPLEMENTARY - 10 AMPERES Pt T c = 2 5°C GE T yp e NPN V CEO M in. V •c C o n t. (A I 50 30 50 PNP M in . M in . 10 35 20 -3 0 -1 0 35 20 50 30 10 60 40 50 —30 ■10 60 40 50 45 10 35 20 <W) D44H1 - D45H1 D 44 H 2


    OCR Scan     		D44H1 D45H1 D44H2 D45H2 D44H4 D45H4 D44H5 D45H5 D44H7 D45H7 ge d45h11 GE D45H2 ge d44h11 D44H8 D44H1 D44H2 transistor d44h11 D44H7 PDF