GE SEMICONDUCTOR DATA SCR Search Results

GE SEMICONDUCTOR DATA SCR Result Highlights (5)

Part	Manufacturer	Description
NFMJMPC226R0G3D	Murata Manufacturing Co Ltd	Data Line Filter,
NFM15PC755R0G3D	Murata Manufacturing Co Ltd	Feed Through Capacitor,
NFM15PC435R0G3D	Murata Manufacturing Co Ltd	Feed Through Capacitor,
NFM15PC915R0G3D	Murata Manufacturing Co Ltd	Feed Through Capacitor,
SCL3400-D01-004	Murata Manufacturing Co Ltd	2-axis (XY) digital inclinometer

GE SEMICONDUCTOR DATA SCR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP1N50E TMOS E-FET ™ Power Field Effect Transistor Motorola Prefarrtd D o vi» N-Channel Enhancement-Mode Silicon Gate This high volta ge M O S FET uses an advanced te rm inatio n scheme to provide enhanced voltage-blocking capability without	OCR Scan	MTP1N30E 0E-05 0E-04 0E-03 0E-02 0E-01	PDF
2N7332 Contextual Info: HARRIS SEMICOND SECTOR ffj HARRIS 1 if n - r HARRIS SEMICONDUCTOR RCA GE MOE D OBJECTIVE 4302271 ÜD33ÖS1 T BiHAS 2N7332R, 2N7332H REGISTRATION PENDING Available As FRK9460R, FRK9460H IN T E R S IL -T 1Q A,-500V RDS on =1.20n This Objective Data Sheet Represents the Proposed Device Performance.	OCR Scan	2N7332R, 2N7332H FRK9460R, FRK9460H -500V 2N7332	PDF
mtp2p Abstract: 2p50e Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s D ata Sheet M TP 2P 50E TM O S E -F E T ™ P o w er Field E ffe c t T ransistor M otorola Preferred Device P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 500 VOLTS This high volta ge M O S FET uses an advanced term ination	OCR Scan	TP2P50E 0E-05 mtp2p 2p50e	PDF
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dynam ic S w itch PLL C lock D river M PC993 The M PC 993 is a PLL c lo ck drive r de sign ed spe cifically for redundant clo ck tree designs. T h e d e vice rece ives tw o differential LVP EC L clo ck sig nals from w hich it ge ne rates 5 new differential LVP EC L c lo ck outputs.	OCR Scan	uPC993 PC993 MPC993/D	PDF
B1545 Abstract: b1545 motorola b1545 to220 Contextual Info: MOTOROLA Order this document by MBRF1545CT/D SEMICONDUCTOR TECHNICAL DATA SW ITCH MODE Schottky Power R ectifier The S W IT C H M O D E P ow er R ectifier em p lo ys the S cho ttky B arrier p rincip le in a large area m e ta l-to -s ilic o n po w e r diode. S ta te - o f- th e - a r t ge o m e try fea tu res	OCR Scan	MBRF1545CT/D B1545 b1545 motorola b1545 to220	PDF
BRF2045 Contextual Info: MOTOROLA Order this document by MBRF2045CT/D SEMICONDUCTOR TECHNICAL DATA SW ITCH MODE Schottky Power R ectifier The S W IT C H M O D E P ow er R ectifier em p lo ys the S cho ttky B arrier p rincip le in a large area m e ta l-to -s ilic o n po w e r diode. S ta te - o f- th e - a r t ge o m e try fea tu res	OCR Scan	MBRF2045CT/D BRF2045	PDF
B745 MOTOROLA Abstract: b745 diode b745 Contextual Info: MOTOROLA Order this document by MBRF745/D SEMICONDUCTOR TECHNICAL DATA SW ITCH MODE S ch o ttky Pow er R ectifier MBRF745 The S W IT C H M O D E P ow er R ectifier em p lo ys the S cho ttky B arrier p rincip le in a large area m e ta l-to -s ilic o n po w e r diode. S ta te - o f- th e - a r t ge o m e try fea tu res	OCR Scan	MBRF745/D B745 MOTOROLA b745 diode b745	PDF
Contextual Info: MOTOROLA Order this document by MBRF1045/D SEMICONDUCTOR TECHNICAL DATA SW ITCH MODE Schottky Power R ectifier M BRF1045 The S W IT C H M O D E P ow er R ectifier em p lo ys the S cho ttky B arrier p rincip le in a large area m e ta l-to -s ilic o n po w e r diode. S ta te - o f- th e - a r t ge o m e try fea tu res	OCR Scan	MBRF1045/D	PDF
IC400 Abstract: CM400HA-24A Contextual Info: MITSUBISHI IGBT MODULES CM400HA-24A HIGH POWER SWITCHING USE INSULATED TYPE CM400HA-24A ●I C ….………………….……. 400 A ●V CES …………….….…. 1200 V ●Flat base Type Copper non-plating base plate No accessory (terminal screw) attach	Original	CM400HA-24A July-2010 IC400 CM400HA-24A	PDF
cm500ha-34a Contextual Info: MITSUBISHI IGBT MODULES CM500HA-34A HIGH POWER SWITCHING USE INSULATED TYPE CM500HA-34A ●I C ….………………….……. 500 A ●V CES …………….….…. 1700 V ●Flat base Type Copper non-plating base plate No accessory (terminal screw) attach	Original	CM500HA-34A July-2010 cm500ha-34a	PDF
IC600 Abstract: CM600HA-24A CM600HA-24 Contextual Info: MITSUBISHI IGBT MODULES CM600HA-24A HIGH POWER SWITCHING USE INSULATED TYPE CM600HA-24A ●I C ….………………….……. 600 A ●V CES …………….….…. 1200 V ●Flat base Type Copper non-plating base plate No accessory (terminal screw) attach	Original	CM600HA-24A July-2010 IC600 CM600HA-24A CM600HA-24	PDF
Contextual Info: MITSUBISHI IGBT MODULES CM400HA-24A HIGH POWER SWITCHING USE INSULATED TYPE CM400HA-24A ●I C ….………………….……. 400 A ●V CES …………….….…. 1200 V ●Flat base Type Copper non-plating base plate No accessory (terminal screw) attach	Original	CM400HA-24A January-2011	PDF
Mitsubishi Electric IGBT MODULES Abstract: IE-500 ie500 Contextual Info: MITSUBISHI IGBT MODULES CM500HA-34A HIGH POWER SWITCHING USE INSULATED TYPE CM500HA-34A ●I C ….………………….……. 500 A ●V CES …………….….…. 1700 V ●Flat base Type Copper non-plating base plate No accessory (terminal screw) attach	Original	CM500HA-34A July-2010 Mitsubishi Electric IGBT MODULES IE-500 ie500	PDF
CM600HA-24A Abstract: IC600 Contextual Info: MITSUBISHI IGBT MODULES CM600HA-24A HIGH POWER SWITCHING USE INSULATED TYPE CM600HA-24A ●I C ….………………….……. 600 A ●V CES …………….….…. 1200 V ●Flat base Type Copper non-plating base plate No accessory (terminal screw) attach	Original	CM600HA-24A January-2011 CM600HA-24A IC600	PDF

eupec FZ 800 R 16 Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 800 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997	Original		PDF
IC2500 Abstract: FZ 800 R 12 KF6 Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 1600 R 17 KF6 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be done 06.04.1998	Original		PDF
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FD 400 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 C2 16 18 G2 44 2,5 deep 57 E1 C2 K C1 E2 (A) E1	Original		PDF
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 800 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997	Original		PDF
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FD 400 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 C2 16 18 G2 44 2,5 deep 57 E1 C2 K C1 E2 (A) E1	Original		PDF
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 800 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997	Original		PDF
FD400R12KF4 Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 400 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 7 28 2,5 deep screwing depth max. 8 16 40 2,5 deep 53 E1 C2 K C1 E2 (A) E1 G1	Original	A15/97 FD400R12KF4	PDF
fz 79 1500 Abstract: KF423 Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 1800 R 16 KF4 61,5 61,5 13 190 31,5 1 171 57 2 4 3 C C C E M4 M8 E E 4,0 tief C 2,5 tief 28 G E 7 8 6 20,25 5 7 41,25 for M6 screw 79,4 external connection to be done C C C E E	Original		PDF
ic 7800 Abstract: 16KF4 Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 1200 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997	Original		PDF
FD400R12KF4 Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 400 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 7 28 2,5 deep screwing depth max. 8 16 40 2,5 deep 53 E1 C2 K C1 E2 (A) E1 G1	Original	A15/97 FD400R12KF4	PDF

GE SEMICONDUCTOR DATA SCR Search Results

GE SEMICONDUCTOR DATA SCR Result Highlights (5)

GE SEMICONDUCTOR DATA SCR Datasheets Context Search

2N7332

mtp2p

B1545

BRF2045

B745 MOTOROLA

IC400

cm500ha-34a

IC600

Mitsubishi Electric IGBT MODULES

CM600HA-24A

eupec FZ 800 R 16

IC2500

FD400R12KF4

fz 79 1500

ic 7800

FD400R12KF4