IC400
Abstract: CM400HA-24A
Text: MITSUBISHI IGBT MODULES CM400HA-24A HIGH POWER SWITCHING USE INSULATED TYPE CM400HA-24A ●I C ….………………….……. 400 A ●V CES …………….….…. 1200 V ●Flat base Type Copper non-plating base plate No accessory (terminal screw) attach
|
Original
|
CM400HA-24A
July-2010
IC400
CM400HA-24A
|
PDF
|
cm500ha-34a
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM500HA-34A HIGH POWER SWITCHING USE INSULATED TYPE CM500HA-34A ●I C ….………………….……. 500 A ●V CES …………….….…. 1700 V ●Flat base Type Copper non-plating base plate No accessory (terminal screw) attach
|
Original
|
CM500HA-34A
July-2010
cm500ha-34a
|
PDF
|
IC600
Abstract: CM600HA-24A CM600HA-24
Text: MITSUBISHI IGBT MODULES CM600HA-24A HIGH POWER SWITCHING USE INSULATED TYPE CM600HA-24A ●I C ….………………….……. 600 A ●V CES …………….….…. 1200 V ●Flat base Type Copper non-plating base plate No accessory (terminal screw) attach
|
Original
|
CM600HA-24A
July-2010
IC600
CM600HA-24A
CM600HA-24
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM400HA-24A HIGH POWER SWITCHING USE INSULATED TYPE CM400HA-24A ●I C ….………………….……. 400 A ●V CES …………….….…. 1200 V ●Flat base Type Copper non-plating base plate No accessory (terminal screw) attach
|
Original
|
CM400HA-24A
January-2011
|
PDF
|
Mitsubishi Electric IGBT MODULES
Abstract: IE-500 ie500
Text: MITSUBISHI IGBT MODULES CM500HA-34A HIGH POWER SWITCHING USE INSULATED TYPE CM500HA-34A ●I C ….………………….……. 500 A ●V CES …………….….…. 1700 V ●Flat base Type Copper non-plating base plate No accessory (terminal screw) attach
|
Original
|
CM500HA-34A
July-2010
Mitsubishi Electric IGBT MODULES
IE-500
ie500
|
PDF
|
CM600HA-24A
Abstract: IC600
Text: MITSUBISHI IGBT MODULES CM600HA-24A HIGH POWER SWITCHING USE INSULATED TYPE CM600HA-24A ●I C ….………………….……. 600 A ●V CES …………….….…. 1200 V ●Flat base Type Copper non-plating base plate No accessory (terminal screw) attach
|
Original
|
CM600HA-24A
January-2011
CM600HA-24A
IC600
|
PDF
|
70nh
Abstract: rg4 16 diode RG4 DIODE CE900
Text: European PowerSemiconductor and Electronics Company Marketing Information FD 400 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 C2 16 18 G2 44 2,5 deep 57 E1 C2 K C1 E2 (A) E1
|
Original
|
|
PDF
|
eupec FZ 800 R 16
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 800 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997
|
Original
|
|
PDF
|
IC2500
Abstract: FZ 800 R 12 KF6
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1600 R 17 KF6 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be done 06.04.1998
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FD 400 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 C2 16 18 G2 44 2,5 deep 57 E1 C2 K C1 E2 (A) E1
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 800 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FD 400 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 C2 16 18 G2 44 2,5 deep 57 E1 C2 K C1 E2 (A) E1
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 800 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997
|
Original
|
|
PDF
|
FD400R12KF4
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 400 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 7 28 2,5 deep screwing depth max. 8 16 40 2,5 deep 53 E1 C2 K C1 E2 (A) E1 G1
|
Original
|
A15/97
FD400R12KF4
|
PDF
|
|
|
ic 7800
Abstract: 16KF4
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1200 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997
|
Original
|
|
PDF
|
FD400R12KF4
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 400 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 7 28 2,5 deep screwing depth max. 8 16 40 2,5 deep 53 E1 C2 K C1 E2 (A) E1 G1
|
Original
|
A15/97
FD400R12KF4
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP1N50E TMOS E-FET ™ Power Field Effect Transistor Motorola Prefarrtd D o vi» N-Channel Enhancement-Mode Silicon Gate This high volta ge M O S FET uses an advanced te rm inatio n scheme to provide enhanced voltage-blocking capability without
|
OCR Scan
|
MTP1N30E
0E-05
0E-04
0E-03
0E-02
0E-01
|
PDF
|
2N7332
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR ffj HARRIS 1 if n - r HARRIS SEMICONDUCTOR RCA GE MOE D OBJECTIVE 4302271 ÜD33ÖS1 T BiHAS 2N7332R, 2N7332H REGISTRATION PENDING Available As FRK9460R, FRK9460H IN T E R S IL -T 1Q A,-500V RDS on =1.20n This Objective Data Sheet Represents the Proposed Device Performance.
|
OCR Scan
|
2N7332R,
2N7332H
FRK9460R,
FRK9460H
-500V
2N7332
|
PDF
|
mtp2p
Abstract: 2p50e
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s D ata Sheet M TP 2P 50E TM O S E -F E T ™ P o w er Field E ffe c t T ransistor M otorola Preferred Device P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 500 VOLTS This high volta ge M O S FET uses an advanced term ination
|
OCR Scan
|
TP2P50E
0E-05
mtp2p
2p50e
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dynam ic S w itch PLL C lock D river M PC993 The M PC 993 is a PLL c lo ck drive r de sign ed spe cifically for redundant clo ck tree designs. T h e d e vice rece ives tw o differential LVP EC L clo ck sig nals from w hich it ge ne rates 5 new differential LVP EC L c lo ck outputs.
|
OCR Scan
|
uPC993
PC993
MPC993/D
|
PDF
|
B1545
Abstract: b1545 motorola b1545 to220
Text: MOTOROLA Order this document by MBRF1545CT/D SEMICONDUCTOR TECHNICAL DATA SW ITCH MODE Schottky Power R ectifier The S W IT C H M O D E P ow er R ectifier em p lo ys the S cho ttky B arrier p rincip le in a large area m e ta l-to -s ilic o n po w e r diode. S ta te - o f- th e - a r t ge o m e try fea tu res
|
OCR Scan
|
MBRF1545CT/D
B1545
b1545 motorola
b1545 to220
|
PDF
|
BRF2045
Abstract: No abstract text available
Text: MOTOROLA Order this document by MBRF2045CT/D SEMICONDUCTOR TECHNICAL DATA SW ITCH MODE Schottky Power R ectifier The S W IT C H M O D E P ow er R ectifier em p lo ys the S cho ttky B arrier p rincip le in a large area m e ta l-to -s ilic o n po w e r diode. S ta te - o f- th e - a r t ge o m e try fea tu res
|
OCR Scan
|
MBRF2045CT/D
BRF2045
|
PDF
|
B745 MOTOROLA
Abstract: b745 diode b745
Text: MOTOROLA Order this document by MBRF745/D SEMICONDUCTOR TECHNICAL DATA SW ITCH MODE S ch o ttky Pow er R ectifier MBRF745 The S W IT C H M O D E P ow er R ectifier em p lo ys the S cho ttky B arrier p rincip le in a large area m e ta l-to -s ilic o n po w e r diode. S ta te - o f- th e - a r t ge o m e try fea tu res
|
OCR Scan
|
MBRF745/D
B745 MOTOROLA
b745 diode
b745
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MBRF1045/D SEMICONDUCTOR TECHNICAL DATA SW ITCH MODE Schottky Power R ectifier M BRF1045 The S W IT C H M O D E P ow er R ectifier em p lo ys the S cho ttky B arrier p rincip le in a large area m e ta l-to -s ilic o n po w e r diode. S ta te - o f- th e - a r t ge o m e try fea tu res
|
OCR Scan
|
MBRF1045/D
|
PDF
|
