2n2886
Abstract: ST6574 2SC38 BC226 2sc5250 transistor 2SC1381 2SC511R BF140 250M 2SC111
Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,
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buy56-4
BUY56-6
buy56-10
BUY72-4
BUY72-6
BUY72-10
2n2886
ST6574
2SC38
BC226
2sc5250 transistor
2SC1381
2SC511R
BF140
250M
2SC111
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PDINP075500A-0-0-01
Abstract: PD-LD 850nm APD 850nm photodiode pigtail pigtail pin photodiode ge PDINV300SC2A-M-0 PDSIU500ST73-T-0 Si apd photodiode PDGAJ1001FCA-0-0-01 PDINC100SC22-M-0
Text: PD LD PDXX Series Detectors for Fiber Optics InGaAs, Si and Ge PIN Diodes Si and Ge APDs Inc PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs is fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our Silicon
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1100nm,
1650nm
2100nm.
100micron.
PDINP075500A-0-0-01
PD-LD
850nm APD
850nm photodiode pigtail
pigtail pin photodiode ge
PDINV300SC2A-M-0
PDSIU500ST73-T-0
Si apd photodiode
PDGAJ1001FCA-0-0-01
PDINC100SC22-M-0
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Ge APD
Abstract: PD-LD analog laser diode 6 GHz
Text: Analog InGaAs PIN Detectors Analog InGaAs PIN Detectors PD-LD Inc. offers low noise, high responsivity analog InGaAsP photo detectors in convenient fiber coupled packages. These assemblies incorporate 70 micron diameter active area detector that responds optimally to both 1310 and 1550
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A827
Abstract: MSM5416263
Text: O KI Semiconductor MSM5416263 262,144-W ord x 16-B it M ultiport D RA M DESCRIPTION The MSM5416263 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.
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MSM5416263
144-Word
16-Bit
MSM5416263
512-word
A827
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PDINP075500A-0-0-01
Abstract: pigtail pin photodiode ge Si apd photodiode APDS PDINP075100A PDSIU500ST73-T-0 0/PDINP075500A-0-0-01
Text: PD LD Inc PDXX Series PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs is fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our Silicon devices cover the optical spectrum from 400 to 1100nm, InGaAs is
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1100nm,
1650nm
2100nm.
100micron.
PDINP075500A-0-0-01
pigtail pin photodiode ge
Si apd photodiode
APDS
PDINP075100A
PDSIU500ST73-T-0
0/PDINP075500A-0-0-01
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PDINP075ST83-W-0
Abstract: PDINP075SC23-W-0 PDINP075FC13-W-0 laser Silicon Detector
Text: InGaAs PIN Photodiodes 75 µm PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs is fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our PDINP Series are 75um diameter InGaAs PIN photodiodes thar are optimal from 1100 to 1650nm. These devices are available in fiber pigtailed
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1650nm.
PDINP075ST83-W-0
PDINP075SC23-W-0
PDINP075FC13-W-0
laser Silicon Detector
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5295G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For 2 GHz band low-noise amplification • Package • High transition frequency fT • Low collector output capacitance (Common base, input open circuited) Cob
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2002/95/EC)
2SC5295G
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Untitled
Abstract: No abstract text available
Text: an en ue on tin isc ce /D Part No. Publication date: October 2008 AN78L09M Package Code No. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro
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AN78L09M
HSIP003-P-0000Q
SFF00108BEB
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04390G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For switching/digital circuits • Package Two elements incorporated into one package (Transistors with built-in resistor)
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2002/95/EC)
UP04390G
UNR2114
UNR2213
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0431NG Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Package Two elements incorporated into one package (Transistors with built-in resistor)
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2002/95/EC)
UP0431NG
UNR2213
UNR211F
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04312G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For switching/digital circuits • Package Two elements incorporated into one package (Transistors with built-in resistor)
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2002/95/EC)
UP04312G
UNR2212
UNR2112
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04315G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For switching/digital circuits • Package Two elements incorporated into one package (Transistors with built-in resistor)
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UP04315G
UNR2215
UNR2115
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04313G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For switching/digital circuits • Package Two elements incorporated into one package (Transistors with built-in resistor)
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2002/95/EC)
UP04313G
UNR2213
UNR2113
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03394G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Package Two elements incorporated into one package (Transistors with built-in resistor)
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2002/95/EC)
UP03394G
UNR2118
UNR2213
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04598G Silicon NPN epitaxial planar type For high frequency amplification (Tr1) For low frequency amplification (Tr2) • Features Package Two elements incorporated into one package (Each transistor is separated)
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2002/95/EC)
UP04598G
2SC2404
2SD2216J
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Untitled
Abstract: No abstract text available
Text: an en ue on tin isc ce /D Part No. Publication date: October 2008 AN78L09 Package Code No. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro
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SSIP003-P-0000S
AN78Lxx)
SFF00038BEB
AN78L09
AN78L09
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SC108
Abstract: GE SC 160
Text: n Outline Drawing Fuji Discrete Package IGBT n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Minimized Internal Stray Inductance n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls
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Box702708-Dallas
TX75370-
-233-1589Fax
-233-0481-www
SC108
GE SC 160
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Untitled
Abstract: No abstract text available
Text: n Outline Drawing Fuji Discrete Package IGBT n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Minimized Internal Stray Inductance n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls
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702708-Dallas,
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Untitled
Abstract: No abstract text available
Text: n Outline Drawing Fuji Discrete Package IGBT n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Minimized Internal Stray Inductance n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls
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702708-Dallas,
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PDF
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Untitled
Abstract: No abstract text available
Text: n Outline Drawing Fuji Discrete Package IGBT n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Minimized Internal Stray Inductance n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls
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Original
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Box702708-Dallas
TX75370-
-233-1589Fax
-233-0481-www
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PDF
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Untitled
Abstract: No abstract text available
Text: n Outline Drawing Fuji Discrete Package IGBT n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Minimized Internal Stray Inductance n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls
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702708-Dallas,
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PDF
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Untitled
Abstract: No abstract text available
Text: n Outline Drawing Fuji Discrete Package IGBT n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Minimized Internal Stray Inductance n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls
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Original
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702708-Dallas,
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PDF
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Untitled
Abstract: No abstract text available
Text: n Outline Drawing Fuji Discrete Package IGBT n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Minimized Internal Stray Inductance n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls
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Original
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702708-Dallas,
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PDF
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Untitled
Abstract: No abstract text available
Text: n Outline Drawing Fuji Discrete Package IGBT n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Minimized Internal Stray Inductance n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls
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702708-Dallas,
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PDF
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