ba 5888 fp
Abstract: md 5408 usb connector CRT TCL COLOUR TV SCHEMATIC DIAGRAM CRT TCL-2027u COLOUR TV SCHEMATIC DIAGRAM free CRT TCL-2027u COLOUR TV SCHEMATIC DIAGRAM Solid state CCIR ca 152 CD 5888 1412D kre 101 2065 md 5408
Text: STPC Atlas Programming Manual Issue 1.0 July 2, 2002 STMicroelectronics 1/639 Information provided is believed to be accurate and reliable. However, ST Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringements of patents or other
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tyco igbt
Abstract: V23990-P485-A D813 tyco pim GE 639
Text: V23990-P485-A flow PIM 1, 600V version 0303 Maximum Ratings / Höchstzulässige Werte Parameter Condition Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode Dauergrenzstrom
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V23990-P485-A
D81359
tyco igbt
V23990-P485-A
D813
tyco pim
GE 639
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40841
Abstract: 40841 MOSFET CA3096AE CA3096 CA3096A CA3096AM CA3096AM96 CA3096C CA3096CE CA3096E
Text: CA3096 S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Applications Description • Five-Independent Transistors - Three N-P-N and - Two P-N-P The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of
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CA3096
CA3096C,
CA3096,
CA3096A
CA3096A,
CA3096C
40841
40841 MOSFET
CA3096AE
CA3096
CA3096AM
CA3096AM96
CA3096CE
CA3096E
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UJT-2N2646 PIN DIAGRAM DETAILS
Abstract: UJT-2N2646 1N5844 transistor GDV 64A motorola diode marking 925b Zener Diode SOT-23 929b 1N4042A Motorola 1n4504 1N5856B 1n5844 diode
Text: Motorola TVS/Zener Device Data Alphanumeric Index of Part Numbers 1 Cross Reference and Index 2 Selector Guide for Transient Voltage Suppressors and Zener Diodes 3 Transient Voltage Suppressors Axial Leaded Data Sheets 4 Transient Voltage Suppressors Surface Mounted Data Sheets
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28ohm
Abstract: No abstract text available
Text: data sheet version 02/03 V23990-P443-C-PM flow PIM 0+E, 600V Maximum Ratings / Höchstzulässige Werte Parameter Condition Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode
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V23990-P443-C-PM
D81359
28ohm
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transistor C 639 W
Abstract: bc736 transistor BC637 complement BC635 transistor 639 fa 506 BC637 BC639 TI 506 transistor I100O
Text: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/638f640 ABSOLUTE MAXIMUM RATINGS Ta= 250C Characteristic C o lle c to r E m itter V olta ge : at R Be = 1Kohm : : C o lle c to r E m itter V olta ge :
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BC635/637/639
BC635/638f640
BC635
BC637
BC639
transistor C 639 W
bc736
transistor BC637 complement
transistor 639
fa 506
BC637
BC639
TI 506 transistor
I100O
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Halbleiterbauelemente DDR
Abstract: BEL 639 transistor Sowjetische Halbleiter-Bauelemente KBC111 k4213 Germanium Transistor katalog radio fernsehen elektronik elektronik DDR KT904 KT372
Text: K a ta lo g sowjetischer H albleiterbauelem ente Si« linden im K a t a lo g t e il : Der hiermit unseren Lesern vorgelegte Katalog sowjetischer Transistoren, Dioden und integrierter Schaltkreise ist das Resultat enger Zusammen arbeit zwischen dem VEB Elektronikhandel Berlin und der Redaktion der
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hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This
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MY110B
Z0206
Z0208
Z0210
Z0211
Z0212
Z0214
Z0215
Z0217
Z0219
hep 154 silicon diode
zy 406 transistor
motorola HEP 801
hep 154 diode
hep R1751
triac zd 607
2sb337
RS5743.3
F82Z
hep 230 pnp
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Untitled
Abstract: No abstract text available
Text: DA TA SHEET NEC / _ / TFT COLOR LCD MODULE N L6448AC20-06 17cm 6.5 type , 640x480 pixels 262144/4096 colors, incorporated edge-light type backlight high brightness, inverter separated from module DESCRIPTION NL6448AC20-06 is a TFT(thin film transistor) active m atrix color liquid crystal display(LCD) com prising am or
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L6448AC20-06
640x480
NL6448AC20-06
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Untitled
Abstract: No abstract text available
Text: NPN 180, 200 V. ^ General 3 ^ Semiconductor ^ Industries, Inc. 5 0 A m p S w it c h in g GSDS50018. 20 C 2R R c2r h ig h speed / h ig h po w e r s w it c h in g t r a n s is t o r s The GSD series is a reliable NPN double diffused epitaxial transistor designed fo r
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GSDS50018.
GSDS50020
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2SD675
Abstract: 2sd676 2SD674 2SD673 2SB631 2SD600 2SD612 2SD613 2SD638 2SD639
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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2SD669
7c-25-C)
2SD673
2SD674
2SD675
2SD676
2SD675
2SD673
2SB631
2SD600
2SD612
2SD613
2SD638
2SD639
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TO2506
Abstract: No abstract text available
Text: X RFW2N06RLE N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors Features Package 4-PIN HEXDIP TOP VIEW • 2A.60V • rDS on = 0.160ft • UIS Rating Curve (Single Pulse) • Design Optimized For 5 Volt Gate Drive DRAIN • Can be Driven Directly from CMOS, NMOS, TTL Circuits
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160ft
RFW2N06RLE
TA9861)
AN7254
AN7260
RFW2N06RLE
TO2506
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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ca3096
Abstract: CA3096AE 639 TRANSISTOR PNP CA3096E
Text: ui H A R R CA3096 I S S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Applications Description • F ive-Independent Transistors The CA3096C, CA3Û96, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of
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CA3096
CA3096C,
CA3096A
CA3096A,
CA3096,
CA3096C
CA3096.
ca3096
CA3096AE
639 TRANSISTOR PNP
CA3096E
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CT 1975 sam
Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the
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2SC4570
2SC4570-T1
CT 1975 sam
transistor NEC D 588
NEC 2561 LE 401
zo 607 p 408
NEC 2561 de
nec 2561 Q 634
date sheet ic 7483
C4570
CT 1975 - sam
T72 marking
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AX653
Abstract: L640A MAX639CPA
Text: 19-4505; Rev 3; 8/97 J S ÏS ÏÏ!S > k i y j x i y v i 5V/3.3V/3V/Adjustable, High-Efficiency, L o w I , S t e p - D o w n DC-DC C o n v e r t e r s q The M AX639/M AX640/M AX653 ste p-do w n sw itchin g regulators provide high efficiency over a wide range of
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AX639/M
AX640/M
AX653
225mA.
640/M
004IN
L640A
MAX639CPA
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triac zd 607
Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni cian. The information contained herein is based on an analysis of the published
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thT404
ZV15A
ZY33A
ZT696
ZV15B
ZY33B
ZT697
ZT706
ZV27A
ZY62A
triac zd 607
hep c6004
2sb504
2SC 968 NPN Transistor
sje 607
motorola c6004
diode BY127 specifications
K872
af118
Motorola Semiconductor hep c3806p
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Transistor A1H
Abstract: BA6860FS BA6862FS FORWARD REVERSE 3 PHASE MOTOR operation
Text: Motor driver ICs 3-phase motor driver BA6860FS/BA6862FS The BA6860FS and BA6862FS are 3-phase, full-wave, pseudo-linear m otor drivers suited for driving movie cam era cap stan m otors th a t can be op era te d at low voltages. T he ICs have a to rq u e rip p le can ce lla tio n c irc u it to reduce
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BA6860FS/BA6862FS
BA6860FS
BA6862FS
Transistor A1H
FORWARD REVERSE 3 PHASE MOTOR operation
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Untitled
Abstract: No abstract text available
Text: SG1644/SG2644/SG3644 5ILIŒ1N GENERAL DUAL HIGH SPEED DRIVER L IN E A R IN T E G R A T E D C IR C U IT S DESCRIPTION FEATURES The SG1644,2644, 3644 is a dual non-inverting monolithic high speed driver. This device utilizes high voltage Schottky logic to convert TTL signals to high speed outputs up to 18V. The totem
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SG1644/SG2644/SG3644
SG1644
10OOpF
SG1644R/883B
SG1644R
SG2644R
SG3644R
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BA6860FS
Abstract: BA6862FS 2x100 A1H Transistor dc motor high torque Transistor A1H
Text: Motor driver ICs 3-phase motor driver BA6860FS/BA6862FS The BA6860FS and BA6862FS are 3-phase, full-wave, pseudo-linear m otor drivers suited for driving movie cam era cap stan m otors th a t can be op era te d at low voltages. T he ICs have a to rq u e rip p le can ce lla tio n c irc u it to reduce
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BA6860FS/BA6862FS
BA6860FS
BA6862FS
2x100
A1H Transistor
dc motor high torque
Transistor A1H
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7B424
Abstract: MSM5117100
Text: O K I Sem iconductor M SM5117100 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCR IPTIO N The MSM5117100 is a new generation dynam ic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM5117100 is OKI's CMOS silicon gate process technology.
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MSM5117100_
216-Word
MSM5117100
cycles/32ms
MSM5117100
A0-A11
EM240
7B424
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2SC 968 NPN Transistor
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 0 7 is an NPN e p ita x ia l silico n tra n s is to r d e s ig n e d fo r use in lo w no ise and sm a ll sig n a l a m p lifie rs from
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2SC5007
2SC 968 NPN Transistor
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Untitled
Abstract: No abstract text available
Text: For Immilliate M i m e , Contaci four Lotal Salesperson B U R R -B R O W N r « H ^ VFC110 i High-Frequency VOLTAGE-TO-FREQUENCY CONVERTER FEATURES APPLICATIONS • HIGH-FREQUENCY OPERATION: 4MHz FS max • INTEGRATING A/D CONVERSION • PROCESS CONTROL
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VFC110
VFC110
17313LS
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