GY 123
Abstract: SY 170 gd 241 c gd241c funkamateur sy 166 sy 164 VSF203 VSF200 SF 127
Text: Preisliste für Halbleiterbauelemente gültig ab 18. November 1969 Type EVP alt M ark EVP neu M ark Germanium- und Silizium-Gleichrichter GY 099 GY 100 GY 101 GY 102 GY 103 GY 104 GY 105 GY 109 GY 110 GY 111 GY 112 GY 113 GY 114 GY 115 GY 120 GY 121 GY 122
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GAZ14
GY 123
SY 170
gd 241 c
gd241c
funkamateur
sy 166
sy 164
VSF203
VSF200
SF 127
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LD5203
Abstract: asp 1103 VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN U881 AC176K KPSA 10-15 Scans-048 TL836 Leipzig U 3211
Text: SERVICE-M ITTEILUNGEN V E ft UFT I N D U S T K I E V E K T * I E ft R U N D F U N K U N O F E t N S E H E N ErjSiH Iradio - te/evisfon I A u tg a b * 1988 Seit* 7 1 - 4 M i t t e i l u n g a u s d en VBB S t e r n - B a d l o B e r l i n P e h l e r a u c h a t r a t e g l e HMK-D 1 0 0 L P 5 » C o « p a t e * l * i t e * p l a t t e
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Untitled
Abstract: No abstract text available
Text: GD54/74HC241, GD54/74HCT241 OCTAL NONINVERTING 3-STATE BUFFERS General Description These devices are identical in pinout to the 5 4 /7 4 L S 2 4 1 . They contain eight noniverting b u f fers with one active-low and one active-high enable. Each enable independently con tro ls 4 buffers.
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GD54/74HC241,
GD54/74HCT241
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4506 gh
Abstract: CB 7805 CW 7805 H6b 25 dk qb 7805 ck 8DAA wv-cq BD-9C KJ 9D
Text: 1UJF CJRVSU @NHONRL VJRVSU {1| 3SXRWJU _6JFWXUJV \+A6HI>8 >C?:8I>DC 86H: {2| DNQJU \.A>B 7D9Nc2mjRzknjR/kjhoBBd \2>9: G6C<: D; H:CH>C< 9>HI6C8:cjhkPmBf jhjoPkBd \}JIJ6A >CI:G;:G:C8: EG:K:CI>DCcx-w, sitd {3| DJQT~ HSRWUSPPJU \|><=I *~iv6G@ *~ HL>I8=>C< BD9:
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86IDG
HI6C96G9d
4506 gh
CB 7805
CW 7805
H6b 25
dk qb
7805 ck
8DAA
wv-cq
BD-9C
KJ 9D
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Untitled
Abstract: No abstract text available
Text: 97.07,. <:=:2BC@6 9:89 ?>E6@ @6;2F 7JGUVSJT V gdq FJ<G6;<A: 64C45<?<GL v<?8 }Bbnueghiek V h>0 7<8?86GE<6 FGE8A:G; ]58GJ88A 6B<? 4A7 6BAG46GF^ V g@@ 6BAG46G :4C 4I4<?45?8 v<?8 }Bbn,ideihkff V /{ <AFH?4G<BA FLFG8@n s?4FF v 4I4<?45?8 V uAI<EBA@8AG4? 9E<8A7?L CEB7H6G ],Bx- 6B@C?<4AG^
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64C45<
58GJ88A
6BAG46GF^
6BAG46G
sBAG46G
FG4A68
sBAG46G
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A114F
Abstract: No abstract text available
Text: 97.07,/ <:=:2BC@6 9:89 ?>E6@ @6;2F 7JGTURJS U gdq FJ<G6;<A: 64C45<?<GL v<?8 }Bbnueghiek U h>0 7<8?86GE<6 FGE8A:G; ]58GJ88A 6B<? 4A7 6BAG46GF^ U s?4FF v <AFH?4G<BA 4I4<?45?8 v<?8 }Bbn,ideihkff U g@@ 6BAG46G :4C 4I4<?45?8 U uAI<EBA@8AG4? 9E<8A7?L CEB7H6G ],Bx- 6B@C?<4AG^
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64C45<
58GJ88A
6BAG46GF^
6BAG46G
sBAG46G
FG4A68
sBAG46G
A114F
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MODELS 248, 249
Abstract: ACIM adc matlab code D 249 ISOmodem Si3019 Si3019 Application Note Si305x AN84 Si3050
Text: AN84 D I G I TA L H Y B R I D W I T H T H E Si305 X DAA S 1. Introduction This application note is a guide to understanding and implementing the digital hybrid feature found in Si305x DAA products. The Si305x contains an on-chip analog hybrid that performs the 2- to 4-wire conversion and
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Si305
Si305x
Si305x
MODELS 248, 249
ACIM
adc matlab code
D 249
ISOmodem
Si3019
Si3019 Application Note
AN84
Si3050
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Untitled
Abstract: No abstract text available
Text: 97.07-/ ]z,3aeejvaf^ <:=:2BC@6 9:89 ?>E6@ @6;2F 7JGTURJS W gd q GK=H7<=B; 75D56=@=HM v=@9 ~Cbnueghiek W h?1 8=9@97HF=7 GHF9B;H< ]69HK99B 7C=@ 5B8 7CBH57HG^ W x95JM @C58 ID HC kidd1q W s@5GG v =BGI@5H=CB 5J5=@56@9 v=@9 ~Cbn-iddgedlj W gAA 7CBH57H ;5D 5J5=@56@9
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75D56=
69HK99B
7CBH57HG^
x95JM
7CBH57H
sCBH57H
GH5B79
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IRLML2402
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet PD - 9.1257A IRLML2402 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching VDSS = 20V RDS(on) = 0.25Ω
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IRLML2402
OT-23
incorpo100
IRLML2402
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Untitled
Abstract: No abstract text available
Text: NOTES: UNLESS OTHERWISE SPECIFIED 1. NOTICE: RoHS 2. 3. T H IS IS A R o H S COMPLIANT C O M PO N EN T /P R O D U C T . ALL EN G IN EERIN G C H A N G ES M U ST HAVE P R IO R APPRO VAL BY TH E D ESIG N CENTER. dddoddoddodd : PLASTIC: THERMOSET PLASTIC MATERIAL WITH
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HX5008NL
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Untitled
Abstract: No abstract text available
Text: Tem ic SÌ6933DQ S e mi c o nd uc t o r s Dual P-Channel 30-V D-S Rated MOSFET Product Summary V d s (V) rDS(on) (ß ) I d (A) 0.045 @ VGS = -10 V ±3.5 0.085 @ VGs = -4.5 V ±2.5 30 TSSOP-8 G2 Gi "ni Top View d2 P-Channel M OSFET P-Channel M OSFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)
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6933DQ
S-49519--Rev.
18-Dec-96
TSSOP-8/-28
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IRF8734PBF
Abstract: IRF8734TRPBF
Text: PD - 96226 IRF8734PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS on at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage
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IRF8734PbF
10formation:
IRF8734PBF
IRF8734TRPBF
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Untitled
Abstract: No abstract text available
Text: SIEMENS 16 M X 1-Bit Dynamic RAM HYB 5116100AJ-50/-60/-70/-80 HYB 5116100ASJ-50/-60/-70/-80 Advanced Inform ation • 16 777 216 words by 1-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time: 50 ns -50 version
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5116100AJ-50/-60/-70/-80
5116100ASJ-50/-60/-70/-80
B235b05
00S53T7
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Untitled
Abstract: No abstract text available
Text: fc Pulse ' Electronics ww w.pulseelectronics.com NOTES: UNLESS OTHERWISE SPECIFIED 1. NOTICE: RoHS THIS IS A RoHS COMPLIANT CO M PO NEN T/PRO DU CT. ALL ENGINEERING CHANGES MUST HAVE PRIOR APPROVAL BY THE DESIGN CENTER. dooddooddodd: PLASTIC: THERMOSET PLASTIC MATERIAL WITH
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J-STD-003A
HX5008NL
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B56B
Abstract: NL JH gd xe
Text: ;AH,.-/7,. a}{ihm{eib =:>:2DEB6 9:89 @?G6B B6<2I 7NKYZWNX [ khv LPBM<ABG@ <:I:;BEBMR [ 0xw <HBE M>KFBG:ELd B=>:E ?HK A>:OR =NMR EH:= {BE> .Hfrziklmio [ l+6 =B>E><MKB< LMK>G@MA a;>MP>>G <HBE :G= <HGM:<MLb [ }>:OR EH:= NI MH odjhh6v [ /I>Gd L>:E>= ` =NLM <HO>K MRI>L :O:BE:;E>
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tl071 tl081
Abstract: LF451
Text: LF451 m,JFETA* - 241 - 0 X / U - 1 - - ¡-.m /u s • À ^ ' M T X iift:5 0 p A 0ÁMMME: 25nV /vr Hz •te fi 'y Y • '/ - X m m. m a fâ AAiTfcMKE t u s A ÍJ^ff n s iiA ^ œ » ff a * hf « m ife E # m Vos TC/Vos Vos/time Ib JöjMTT&ffiL I os K n v ï^ w .
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LF451
25nV/vr
TL071/TL081
Rs-100
Ta-25Â
-100kHz
tl071 tl081
LF451
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smd diode marking 271
Abstract: SIPMOS N-channel Small-Signal-Transistor
Text: BSP89 Rev. 2.1 SIPMOS Ò Small-Signal-Transistor Feature Product Summary • N-Channel VDS RDS on · Enhancement mode ID · Logic Level 240 V 6 W 0.35 A PG-SOT223 · dv/dt rated • Pb-free lead plating; RoHS compliant 4.5V rated lead plating; RoHS compliant
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BSP89
PG-SOT223
VPS05163
L6327:
smd diode marking 271
SIPMOS N-channel Small-Signal-Transistor
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STB45NF3LL
Abstract: No abstract text available
Text: STB45NF3LL N-CHANNEL 30V - 0.014Ω - 45A D2PAK STripFET II POWER MOSFET TYPE STB45NF3LL • ■ ■ ■ VDSS RDS on ID 30V <0.018Ω 45A TYPICAL RDS(on) = 0.016Ω @4.5V OPTIMAL RDS(ON) x Qg TRADE-OFF @ 4.5V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED
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STB45NF3LL
STB45NF3LL
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Untitled
Abstract: No abstract text available
Text: blE D • ^24^02^ DG1MSM7 SÖ7 ■ HITS MITSUBISHI LASER DIODES ML4XX5 SERIES MITSUBISHI DISCRETE SC FOR OPTICAL INFORMATION SYSTEMS TYPE NAME DESCRIPTION FEATURES ML4XX5 is a visible light AIGaAs sem iconductor • Low threshold current, low operating current
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750nm
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC bME » • IRF9620/9621 /9622/9623 7 S b 4142 0D 12271 ‘H û «SMlSK P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros ON Improved inductive ru gge d n e ss Fast sw itching tim es R u g ge d polysilicon gate cell structure
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IRF9620/9621
IRF9622
F9621
IRF9620
IRF9621
IRF9623
IRF9620/9621Ã
Q01E57b
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circuit TOP 242 PN
Abstract: Diode 1525 RD561 315J IRF720 LS33 diode ru
Text: PD-9.315J International S Rectifier IRF720 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V d s s - 400V R DS on = 1 -8 Í2 lD = 3.3A Description T h ird G e n e ra tio n H E X F E T s fro m In te rn a tio n a l R e ctifie r p rovid e th e d e sig n e r
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IRF720
O-220
T0-220
O-220AB
circuit TOP 242 PN
Diode 1525
RD561
315J
IRF720
LS33
diode ru
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Untitled
Abstract: No abstract text available
Text: DATA SH EE T MOS FIELD EFFECT TRANSISTOR _ ¿¿PA1912 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION T h e JUPA1912 PACKAGE DRAWING Unit : mm is a sw itching d ev ic e which can be driven directly by a 2 .5 -V p o w e r source.
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PA1912
JUPA1912
JUPA1912
D13806EJ2V0DS00
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Untitled
Abstract: No abstract text available
Text: CRD1616-8W CRD1616-8W 8 Watt Reference Design Features General Description • Quasi-resonant Flyback with Constant-current Output The CRD1616-8W reference design demonstrates the performance of the CS1616 single stage dimmable AC/DC LED driver IC with a 250mA output driving 10 LEDs in
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CRD1616-8W
CRD1616-8W
CS1616
250mA
207VAC
253VAC
CS1616
DS1003RD4
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pj 67 diode
Abstract: dvr circuit diagram T408F T290F js 1200
Text: European PowerSem iconductor and Electronics Company Marketing Information TT 200 F 35 '¡ A S LO a ' CO 2 8,5 -►*+-1 ^ -n \li 5 1 I ^ — 4 - - 4 AK ! ° 6 K K1 G1 K2 G2 VWK Okt. 1996 TT 200 F, TD 200 F, DT 200 E le k t r is c h e E ig e n s c h a f te n
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