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    GD 08 RECTIFIERS Search Results

    GD 08 RECTIFIERS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    P104 Coilcraft Inc Silicon Controlled Rectifier, Visit Coilcraft Inc
    iW673-01 Renesas Electronics Corporation Digital Green-Mode Synchronous Rectifier Controller Visit Renesas Electronics Corporation
    iW673-10 Renesas Electronics Corporation Digital Green-Mode Synchronous Rectifier Controller Visit Renesas Electronics Corporation
    iW673-20 Renesas Electronics Corporation Digital Green-Mode Synchronous Rectifier Controller Visit Renesas Electronics Corporation
    iW673-00 Renesas Electronics Corporation Digital Green-Mode Synchronous Rectifier Controller Visit Renesas Electronics Corporation

    GD 08 RECTIFIERS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    thyristor SCR 600V 8A

    Abstract: Gate Turn-off Thyristor 8TWS04S 8TWS06S 8TWS08S AN-994
    Text: Preliminary Data Sheet I2132 11/97 SAFEIR Series 8TWS.S PHASE CONTROL SCR VT < 1.2 V @ 8A ITSM = 120A VR / VD = up to 800V Description/Features The 8TWS.S SAFEIR new series of silicon controlled rectifiers in D-Pak, are specifically designed for low power switching and phase


    Original     		PDF I2132 O-252AA thyristor SCR 600V 8A Gate Turn-off Thyristor 8TWS04S 8TWS06S 8TWS08S AN-994

    40TPS12

    Abstract: 40TPS08 scr 40tps12 035H 40TPS 40TPS08A
    Text: Bulletin I2107 rev. F 03/03 SAFEIR Series 40TPS. PHASE CONTROL SCR VT < 1.45V @ 40A ITSM = 500A VRRM = 800 - 1200V Description/ Features The 40TPS. SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications.


    Original     		PDF I2107 40TPS. O-247 40TPS08A 40TPS12 40TPS08 scr 40tps12 035H 40TPS 40TPS08A

    40TPS12A

    Abstract: 40TPS08 40TPS12 035H 40TPS 40TPS08A 800v, 40a scr
    Text: Bulletin I2107 rev. G 09/03 SAFEIR Series 40TPS. PHASE CONTROL SCR VT < 1.45V @ 40A ITSM = 500A VRRM = 800 - 1200V Description/ Features The 40TPS. SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications.


    Original     		PDF I2107 40TPS. O-247 40TPS08A 40TPS12A 40TPS12A 40TPS08 40TPS12 035H 40TPS 40TPS08A 800v, 40a scr

    IRF7524D1

    Abstract: No abstract text available
    Text: PD -91648B IRF7524D1 PRELIMINARY FETKYTM MOSFET & Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = -20V


    Original     		PDF -91648B IRF7524D1 forward-481 IRF7524D1

    ir*526

    Abstract: HEXFET SO-8 IRF7526D1
    Text: PD -91649B IRF7526D1 PRELIMINARY FETKY TM MOSFET & Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = -30V


    Original     		PDF -91649B IRF7526D1 forwar-481 ir*526 HEXFET SO-8 IRF7526D1

    IRF7521D1

    Abstract: ba 7321
    Text: PD- 91646B IRF7521D1 PRELIMINARY FETKY MOSFET / Schottky Diode ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A


    Original     		PDF 91646B IRF7521D1 forward-481 IRF7521D1 ba 7321

    IRF7523D1

    Abstract: No abstract text available
    Text: PD- 91647C IRF7523D1 FETKY MOSFET / Schottky Diode ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = 30V


    Original     		PDF 91647C IRF7523D1 IRF7523D1

    40TPS12A

    Abstract: 40TPS12 scr 40tps12 035H 40TPS 40TPS08 40TPS08A 800v, 40a scr
    Text: Bulletin I2107 rev. G 09/03 SAFEIR Series 40TPS. PHASE CONTROL SCR VT < 1.45V @ 40A ITSM = 500A VRRM = 800 - 1200V Description/ Features The 40TPS. SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications.


    Original     		PDF I2107 40TPS. 12-Mar-07 40TPS12A 40TPS12 scr 40tps12 035H 40TPS 40TPS08 40TPS08A 800v, 40a scr

    IRF7523D1

    Abstract: No abstract text available
    Text: PD- 91647C IRF7523D1 PRELIMINARY FETKY MOSFET / Schottky Diode ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A


    Original     		PDF 91647C IRF7523D1 IRF7523D1

    96176

    Abstract: No abstract text available
    Text: PD -96176 IRF7524D1GPbF FETKYTM MOSFET & Schottky Diode l l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint Lead-Free Halogen-Free A A S G 1 8 K 2 7 K 3 6


    Original     		PDF IRF7524D1GPbF EIA-481 EIA-541. 96176

    EIA-541

    Abstract: xf 017 A10160 ma892
    Text: PD -96176 IRF7524D1GPbF FETKYTM MOSFET & Schottky Diode l l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint Lead-Free Halogen-Free 1 8 K A 2 7 K S 3 6 D G


    Original     		PDF IRF7524D1GPbF EIA-481 EIA-541. EIA-541 xf 017 A10160 ma892

    skb 28/08

    Abstract: Semikron SKB 28/12 skb 28/04 SKB 28/12 skch 28-04 SKBH28 SKBT28 SKCH28 Semikron SKBT 28 skbz 25 12
    Text: SEMIKRON V d rm Id Tease V r sm SEMIPONT 1 Controllable Bridge Rectifiers = 89 °C, full conduction 28 A V r rm 400 V 600 V 800 V 1200 V 1400 V SKBT 28/06 SKBT 28/08 SKBT 28/12 SKBT 28/14 SKBH 28/06 SKBH 28/08 SKBH 28/12 SKBH 28/14 SKBZ 28/04 SKBZ 28/06


    OCR Scan     		PDF 13bb71 P5A/100 P13A/125 P1A/120 11Hillâ 13bti71 SKBH28 SKCH28 skb 28/08 Semikron SKB 28/12 skb 28/04 SKB 28/12 skch 28-04 SKBH28 SKBT28 SKCH28 Semikron SKBT 28 skbz 25 12

    Untitled

    Abstract: No abstract text available
    Text: s EMIKRO n V drm Id Tease = 89 °C, full conduction V rsm V rrm 28 A 400 V 600 V SKBT 28/06 SEMIPONT 1 Controllable Bridge Rectifiers SKBZ 28/04 SKCH 28/04 SKBH 28/06 SKBZ 28/06 SKCH 28/06 800 V SKBT 28/08 SKBH 28/08 SKBZ 28/08 SKCH 28/08 1200 V SKBT 28/12


    OCR Scan     		PDF P5A/100 P13A/125 P1A/120

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    Untitled

    Abstract: No abstract text available
    Text: A13LL71 V rsm V rrm Vdrm V 500 700 900 1100 1300 V 400 600 800 1000 1200 1500 1700 1400 1600 V/ JS 500 500 500 500 500 1000 1000 1000 Sin. It s m Tvj 180; (Tease = • • • Tvj = = = = tgd Tvj = 25 °C; tgr Vd T Vj i2t T vj 25 °C; 130 °C; 25 °C; 130 °C;


    OCR Scan     		PDF A13LL71 613bb71 GDD474A 613bb71 B3-11 SKT16 SKT24 BS3934 SO-35A O-208

    SKT300

    Abstract: SKT250 SKT30 SKT300-06C SKT250/08C Semikron SKT 250/08C SKT250-06C SKT300-08C semikron skt 900 skt 2500 semikron
    Text: T V rsm o | ai3bb?i aaaisas 1 | „ s e MIKRON S '\°\ — ise SEMIKRON INC - 2 . maximum values for continuous operation 375 A | 450 A | 550 A Itrms V rrm V dt /c r V drm 240 A (78 °C) 180; Tease 2=3 .°C) 285 A (77 °C) 350 A (85 °C) 200 SKT 215/04 C


    OCR Scan     		PDF SKT250/04 SKT300/04 SKT250/06 SKT300/06 SKT300/08 SKT300/12 SKT250/16 SKT215 SKT250 B3-31 SKT300 SKT30 SKT300-06C SKT250/08C Semikron SKT 250/08C SKT250-06C SKT300-08C semikron skt 900 skt 2500 semikron

    SKT240

    Abstract: SKT491/18E SKT491/12E SKT551/16E b337 KT340 SKT490 SKT551/18E SKT240/04D SKT240/14E
    Text: SEM IKR O N 1SE INC D I A13bfa71 'T-zs-ioi Vrsm Vrrm Vdrm i\ d- t /ic r maximum values for continuous operation 600 A I 700 A (sin. 180;Tcase = • • •! DSC) 380 A (60 °C) 450 A (57 °C) Itrm s Itav V V V/ns 500 400 500 SKT 240/04 D SKT340/04 D 900


    OCR Scan     		PDF SKT340/04 SKT340/08 SKT340/12 SKT340/14 SKT240/16 SKT340/16 SKT240/18 SKT340/18 SKT240 B3-37 SKT491/18E SKT491/12E SKT551/16E b337 KT340 SKT490 SKT551/18E SKT240/04D SKT240/14E

    SKDH 115

    Abstract: diode b71 SKUT35 skdt35
    Text: SEMIKRON INC 3bE D fll3bb?l 0Q0EA2Q S M S E K G • _ ^ Id Tease VO RM = .;fullcond uction Irm s = 83 °C) 35 A (Tease V rsm 35A(94°C) V rrm 800 V 1200 V 1400 V SKDT 35/08 SKDT 35/12 SKDT 35/14 SKDH 35/08 SKDH 35/12 SKDH 35/14 Symbol Conditions Tease


    OCR Scan     		PDF P1/120 P1/120 SKDH 115 diode b71 SKUT35 skdt35

    thyristor SCR 600V 8A

    Abstract: No abstract text available
    Text: Preliminary Data Sheet 12132 11/97 Inte rn ation a l I ö R Rectifier SAFElR Series 8TWS.S PHASE CONTROL SCR vT < 1.2 V @ 8A ^TSM = 120A V R/ V D = up to 800V Description/Features The 8TWS.S SAFER new series of silicon controlled rectifiers in D-Pak, are specifically


    OCR Scan     		PDF O-252AA thyristor SCR 600V 8A

    skch26

    Abstract: B1151 BH26 BH-26
    Text: SEMIKRON INC 3bE » • fliabb?! OGGEfllb 3 ■ SEKG s e MIKRDn r r - Z 5 V drm Id Tease = 89 °C, full conduction V rsm V rrm 28 A 400 V SKBT 26/04 S K B H 26/04 S K C H 26/04 600 V S K B T 26/06 S K B H 26/06 S K C H 26/06 S K C H 27/06 800 V SKBT 26/08


    OCR Scan     		PDF SKBT26 SKCH26 P1/120 00V/ps 50mA/15Q B13bfa71 fil3bb71 SKYT35 M7-K16-5? B1151 BH26 BH-26

    28xq

    Abstract: SKBT28/08
    Text: s e MIKRON V drm V rsm V rrm I d T e a se = 89 °C, full conduction 28 A SKBZ 28/04 SKCH 28/04 600 V SKBT 28/06 SKBH 28/06 SKBZ 28/06 SKCH 28/06 800 V SKBT 28/08 SKBH 28/08 SKBZ 28/08 SKCH 28/08 1200 V SKBT 28/12 SKBH 28/12 SKBZ 28/12 SKCH 28/12 1400V SKBT 28/14


    OCR Scan     		PDF SKBT28 P1/120 00V/ps SKBH28 SKBZ28 28xq SKBT28/08

    34A65

    Abstract: skch4012 P5100 semikron skch 20 12 Semikron SKB b 80 semikron skd 30 P13125 semikron skb 30 semikron skb 60 25A45
    Text: S EM IK R O N D V drm V rsm Tease = .°C, full c o n d u c tio n 40 A (92 °C) 40A (92°C ) 60A (86°C ) 100A(84°C) 400 V SKCH 40/04 SKBT 40/04 SKDT 60/04 SKDT 100/04 800 V 1200 V 1400 V SKCH 40/08 SKCH 40/12 SKCH 40/14 SKBT 40/08 SKBT 40/12 SKBT 40/14


    OCR Scan     		PDF SKBT40 1100A2s SKDT60 3600A2s P13/125 P1/120 P1/120 34A65 skch4012 P5100 semikron skch 20 12 Semikron SKB b 80 semikron skd 30 P13125 semikron skb 30 semikron skb 60 25A45

    2sd 5200

    Abstract: SKT300 skt 2500 semikron skt 450 semikron skt 24 SKT250 to-209ad C450A M24-P 2sd 209 l
    Text: S1E D Ö13bb71 DOOBMfib a 77 s e m ik r g n SEMIKRON INC V rsm Itrm s V rrm iV-dt i/or V drm maximum values for continuous operation 450 A I 550 A (sin. 180; Tease “ . .°C) 285 A (77 °C) 350 A (85 °C) Ita v V V V/ns 500 400 200 SKT250/04 C SKT300/04 C


    OCR Scan     		PDF ai3bb71 SKT250/04 SKT250/12 SKT300/04 SKT300/08 2sd 5200 SKT300 skt 2500 semikron skt 450 semikron skt 24 SKT250 to-209ad C450A M24-P 2sd 209 l

    Untitled

    Abstract: No abstract text available
    Text: s e m ik r d n fll3bt.71 GOOS'm 732 • V rsm V rrm V drm W er V V V/|is 500 700 900 1300 1500 1700 400 600 800 1200 1400 1600 500 500 500 1000 1000 1000 Itrm s maximum values for continuous operation 220 A | 280 A Itav (sin. 180; case = . . . °C) 140 A (80 °C)


    OCR Scan     		PDF A13bb71