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Amphenol Fiber Systems International TKIT-MNT-NGCONTEST, POLISH AND CLEANING KIT NG |
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BZBGEAR BG-CONNEXIO4K Wireless BYOD Presentation |
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Semtech Corporation RDK-12GCONV-02UHD-SDI CONVERTER REF DESIGN |
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E-Switch Inc D16EES11CORGCONCAVESWITCH PB SPDT 8A 125V |
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OmniOn Power Inc CP3000HV54TEZ-FSG-CONVERTERAC/DC CONVERTER |
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GCON Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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marvell rgmii layout
Abstract: GMII layout ethernet PHY hybrid 1000BASE-X 88E1040S 88E1041S 88E1042H 1000base SX receiver "Ethernet Transceivers" marvell ethernet PHY transceivers
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88E1040/S, 88E1041/S, 88E1042H 100BASE-TX 1000BASE-T 10BASE-T marvell rgmii layout GMII layout ethernet PHY hybrid 1000BASE-X 88E1040S 88E1041S 88E1042H 1000base SX receiver "Ethernet Transceivers" marvell ethernet PHY transceivers | |
U2761BContextual Info: U2761B DECT RF / IF IC Description The U2761B is an integrated circuit manufactured in Atmel Wireless & Microcontrollers’ UHF5S technology, designed for DECT application. It contains rejection mixer, IF amplifier, FM demodulator working at f = fIF/2, baseband filter, RSSI, TX preamplifier and power-ramping generator for power amplifier. |
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U2761B U2761B D-74025 17-Aug-00 | |
512K32
Abstract: 9Q512K32 UT9Q512 UT9Q512K32
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UT9Q512K32 16Megabit 30krads 300krads 16Mbit) 68-lead 10krad 30krad 512K32 9Q512K32 UT9Q512 | |
EM78458
Abstract: EM78459 78459
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EM78458/459 EM78458AP 300mil EM78459AK EM78459AM EM78458AM EM78458 EM78459 78459 | |
44-PIN
Abstract: M48T129V M48T129Y
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M48T129Y M48T129V 32-pin M48T129Y: M48T129V: 44-PIN M48T129V M48T129Y | |
TS921IPT
Abstract: TS921 TS921IN 5v headphone AMPLIFIER CIRCUIT DIAGRAM 5.1 audio amplifier
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TS921 TS921 TS921IPT TS921IN 5v headphone AMPLIFIER CIRCUIT DIAGRAM 5.1 audio amplifier | |
Contextual Info: Standard Products QCOTSTM UT7Q512 512K x 8 SRAM Advanced Data Sheet June 12, 2000 FEATURES q 100ns 5 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state |
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UT7Q512 100ns 30krads 300krads 32E-8 0E14n/cm2 32-lead 36-lear 36-lead | |
Contextual Info: Standard Products QCOTSTM UT8Q512K32 16Megabit SRAM MCM Data Sheet January 21, 2002 FEATURES q 25ns maximum 3.3 volt supply address access time q MCM contains four (4) 512K x 8 industry-standard asynchronous SRAMs; the control architecture allows operation as 8, 16, 24, or 32-bit data width |
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UT8Q512K32 16Megabit 32-bit 50krads 1E-10 68-lead 512K32 10krad | |
Contextual Info: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Preliminary Data Sheet May 21, 2007 www.aeroflex.com/radhardsram INTRODUCTION FEATURES 20ns read, 10ns write maximum access times Functionally compatible with traditional 512K x 32 SRAM devices |
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UT8ER512K32 100Krad 100MeV-cm2/mg 01x10-16 156KHz 0E14n/cm2 68-lead | |
Contextual Info: Standard Products QCOTSTM UT8Q512 512K x 8 SRAM Data Sheet August, 2002 FEATURES q 25ns 3.3 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state |
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UT8Q512 50krads 100krads 36-lead 10krad) 30krad) 50krad | |
Contextual Info: NOTE: This product has been replaced with UT9Q512E. Please use the UT9Q512E for NEW designs. See the April 2007 customer letter at www.aeroflex.com/QCOTS for the improvements and differences. 1 Standard Products QCOTSTM UT9Q512 512K x 8 SRAM Data Sheet August 19, 2004 |
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UT9Q512E. UT9Q512E UT9Q512 50krads 100krads | |
Contextual Info: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Preliminary Data Sheet August 28, 2012 www.aeroflex.com/memories FEATURES 20ns Read, 10ns Write maximum access times available Functionally compatible with traditional 1M, 2M and 4M |
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UT8ER1M32 32Megabit UT8ER2M32 64Megabit UT8ER4M32 128Megabit UT8ER1M32: UT8ER2M32: UT8ER4M32: x10-16 | |
Contextual Info: Standard Products QCOTSTM UT9Q512K32 16Megabit SRAM MCM Advanced Data Sheet August 6, 2001 FEATURES q 35ns maximum 5 volt supply address access time q Asynchronous operation for compatible with industry standard 512K x 8 SRAMs q TTL compatible inputs and output levels , three-state |
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UT9Q512K32 16Megabit 50krads 1E-10 0E14n/cm2 68-lead 10krad 30krad 50krad | |
Contextual Info: Standard Products UT7Q512 512K x 8 SRAM Advanced Data Sheet June 30, 1999 FEATURES q 100ns 5 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state |
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UT7Q512 100ns 30Krad 100Krad 0E14n/cm2 32-lead 100ns 7Q512) | |
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Contextual Info: Standard Products QCOTSTM UT8Q512K32 16Megabit SRAM MCM Advanced Data Sheet December 17, 2001 FEATURES q 25ns maximum 3.3 volt supply address access time q MCM contains four (4) 512K x 8 industry-standard asynchronous SRAMs; the control architecture allows |
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UT8Q512K32 16Megabit 32-bit 50krads 1E-10 68-lead 512K32 10krad | |
5962-0422Contextual Info: Standard Products UT8CR512K32 16 Megabit SRAM Advanced Data Sheet March 2006 www.aeroflex.com/4MSRAM FEATURES 17ns maximum access time Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs CMOS compatible inputs and output levels, three-state |
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UT8CR512K32 67E-7cm2/bit 0E14n/cm2 68-lead 5962-0422 | |
UT9Q512K32Contextual Info: Standard Products UT9Q512K32E 16 Megabit RadTolerant SRAM MCM Data Sheet June 28, 2011 INTRODUCTION The UT9Q512K32E RadTol product is a high-performance 2M byte 16Mbit CMOS static RAM multi-chip module (MCM), organized as four individual 524,288 x 8 bit SRAMs with a |
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UT9Q512K32E 68-lead UT9Q512K32 | |
Contextual Info: Standard Products QCOTSTM UT9Q512K32 16Megabit SRAM MCM Data Sheet January 21, 2002 FEATURES q 25ns maximum 5 volt supply address access time q Asynchronous operation for compatible with industry standard 512K x 8 SRAMs q TTL compatible inputs and output levels , three-state |
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UT9Q512K32 16Megabit 50krads 1E-10 68-lead 512K32 -40oC | |
Contextual Info: Standard Products QCOTSTM UT7Q512 512K x 8 SRAM Preliminary Data Sheet November 21, 2000 FEATURES q 100ns 5 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state |
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UT7Q512 100ns 30krad 300krad 32E-8 0E14n/cm2 0E11pped 36-lead 32-lead | |
Contextual Info: Standard Products QCOTSTM UT9Q512 512K x 8 SRAM Data Sheet August, 2002 FEATURES q 25ns maximum 5 volt supply address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state |
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UT9Q512 50krads 100krads 36-lead 50krad | |
UT8ER
Abstract: UT8ER512K
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UT8ER512K32 100Krad 100MeV-cm2/mg 01x10-16 156KHz 0E14n/cm2 68-lead 898in UT8ER UT8ER512K | |
UT8R512K8Contextual Info: Standard Products UT8R512K8 512K x 8 SRAM Advanced Data Sheet November 9, 2001 Rev G FEATURES q 10ns maximum access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q CMOS compatible inputs and output levels, three-state |
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UT8R512K8 0E14n/cm 36-lead 40-lead | |
Contextual Info: Standard Products QCOTSTM UT8Q1024K8 SRAM Data Sheet June, 2002 FEATURES q 25ns maximum 3.3 volt supply address access time q Dual cavity package contains two (2) 512K x 8 industrystandard asynchronous SRAMs; the control architecture allows operation as an 8-bit data width |
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UT8Q1024K8 50krad 44-lead -40oC 10krad 30krad | |
Contextual Info: Standard Products UT8R512K8 512K x 8 SRAM Advanced Data Sheet April 2, 2003 FEATURES q 15ns maximum access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q CMOS compatible inputs and output levels, three-state bidirectional data bus |
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UT8R512K8 0E14n/cm 36-lead 02TBD) 40-lead |