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    TE Connectivity AGC227N00001215000

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    Text: S T P 4 N 100 S T P 4 N 100 FI ¿57 S G S -T H O M S O N ¡m e ra « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP 4N 100 S TP 4N 100FI V dss RDS on Id 1000 V 1000 V < 3 .5 Q. < 3 .5 Q. 4 A 2.2 A TYPICAL RDS(on) = 3.1 Q. AVALANCHE RUGGED TECHNOLOGY


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