GC MARKING CODE DIODE Search Results

Contextual Info: SIEMENS Silicon Switching Diodes BAW 78 A . BAW 78 D • Switching applications * • High breakdown voltage Type Marking Ordering Code tape and reel BAW 78 A BAW 78 B BAW 78 C BAW 78 D GA GB GC GD Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration

A778

Abstract: A778 transistor a784 Q62702-A779 Q62702-A778 A779 Q62702-A109 Q62702-A784
Contextual Info: Silicon Switching Diodes BAW 78 A … BAW 78 D Switching applications ● High breakdown voltage ● Type Marking Ordering Code tape and reel BAW 78 A BAW 78 B BAW 78 C BAW 78 D GA GB GC GD Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration

MARKING GA

Abstract: Q62702-A779 Q62702-A778
Contextual Info: SIEM EN S Silicon Switching Diodes BAW 78 A . BAW 78 D • Switching applications • High breakdown voltage Type BAW BAW BAW BAW 78 78 78 78 A B C D Marking Ordering Code tape and reel GA GB GC GD Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration

MARKING GA

Abstract: A779 baw78c
Contextual Info: BAW 78 A BAW 78 D Silicon Switching Diodes Type BAW BAW BAW BAW 78 78 78 78 A B C D Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package GA GB GC GD Q 62702-A675 Q 62 702-A 676 Q 62702-A677 Q 62 702-A 678 Q 62 70 2-A 77 8

GHM1540

Abstract: GHM3045 Iec384-14 GHM3145 GHM2145 223k x7r 50 cd 471k capacitor GHM1040 GHM1545 iec384
Contextual Info: This is the PDF file of catalog No.C16E-3. No.C16E3.pdf MEDIUM-VOLTAGE CHIP MONOLITHIC CERAMIC CAPACITOR DC250V-3.15kV/AC250V r.m.s. GHM Series MEDIUM-VOLTAGE CHIP MONOLITHIC CERAMIC CAPACITOR Murata Manufacturing Co., Ltd. Cat.No.C16E-3 This is the PDF file of catalog No.C16E-3.

diode MARKING CODE GC

Abstract: 2SC2012 fast recovery diode 600v 5A GC marking code diode marking code GC diode SC201 SC201-2 SC201-4 SC201-6 diode marking Gc
Contextual Info: SC201 0.5A ( 200V to 600V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability GA Applications

dALLAS MARKING CODE

Abstract: fast recovery diode 600v 5A SC201 SC201-2 SC201-4 SC201-6 diode MARKING CODE GC
Contextual Info: SC201 0.5A ( 200V to 600V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability GA Applications

ST T4 3660

Abstract: 035H IRFPE30 IRG4PH40UD2-E induction cooking ge 6220 induction cooking circuits
Contextual Info: PD - 96781 IRG4PH40UD2-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast

Contextual Info: PD - 96781A IRG4PH40UD2-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in

ST T4 3660

Abstract: 035H IRFPE30 IRG4PH40UD2-E TO247AD package marking GC diode induction cooking circuits induction cooking
Contextual Info: PD - 96781A IRG4PH40UD2-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in

2SC2012

Contextual Info: SC201 0.5A ( 200V to 800V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability Code GA Applications

irf 3250

Abstract: ULTRAFAST 10A 600V TD 1410 IC 035H C-150 IRFPE30 IRG4PH40UD2 IGBT 100V 200A td 1410
Contextual Info: PD - 94739 IRG4PH40UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter

transistor VCE 1000V

Abstract: TO-247AC Package 12A H3 irf 150 equivalent 035H IRFPE30
Contextual Info: PD - 95327 IRG4PC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

Contextual Info: PD - 95327 IRG4PC30UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

IRF 504

Abstract: 005 418 irf 144
Contextual Info: PD- 95565 IRG4BC20UD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

marking code GC diode

Abstract: SC201 SC201-2 SC201-4 SC201-6 SC201-8 diode marking Gc marking CODE GA
Contextual Info: SC201 0.5A ( 200V to 800V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability Code GA Applications

Contextual Info: PD- 95565 IRG4BC20UD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

IRF1010

Contextual Info: PD-94810 IRG4BC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

IGBT 600V 12A

Abstract: TO-220AB transistor package ic MARKING QG ultraFast Recovery Bridge Rectifier IRF1010
Contextual Info: PD-94810 IRG4BC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

Contextual Info: PD - 97480A IRG7PH42UD1PbF IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT technology Low switching losses

4060BE

Contextual Info: SC201 0.5A ( 200V to 800V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability Code GA Applications

IRG7PH42UD1-EP

Abstract: IRG7PH42UD1PbF induction heating Circuit P channel 600v 30a IGBT 035H C-150 IRFPE30 IRGP30B120KD-E 6 pulse IGBT single line drawing 600v 30a IGBT
Contextual Info: PD - 97480 IRG7PH42UD1PbF IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA

IRG7PH42UD1PBF

Abstract: IRG7PH42UD1-EP 60A12 IRG7PH42U irg7ph42ud IRG7PH42UD1 irgp30b120 irg7ph42 igbt 600V 30A
Contextual Info: PD - 97480A IRG7PH42UD1PbF IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT technology Low switching losses

irf 100v 200A

Abstract: transistor irf 840 IRF 840 equivalent
Contextual Info: PD - 94909 IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter