GB50XF120K IGBT 6PACK MODULE Search Results

GB50XF120K IGBT 6PACK MODULE Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
GT30J110SRA		Toshiba Electronic Devices & Storage Corporation	IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N)
MG250YD2YMS3		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 2200 V, 250 A, 2-153A1A
TPD4207F		Toshiba Electronic Devices & Storage Corporation	Intelligent power device 600V (High voltage PWM DC brushless motor driver)
TPD4204F		Toshiba Electronic Devices & Storage Corporation	Intelligent power device 600V (High voltage PWM DC brushless motor driver)
TPD4162F		Toshiba Electronic Devices & Storage Corporation	Intelligent power device 600V (High voltage PWM DC brushless motor driver)

GB50XF120K IGBT 6PACK MODULE Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ECONO2-6PACK IGBT module Abstract: IR E78996 GB50XF120K IGBT 6PACK MODULE IRF E78996 E78996 IR GB50XF120K ECONO-2 Text: PD - 94567 GB50XF120K IGBT 6PACK MODULE Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics • Positive VCE (on) Temperature Coefficient	Original	PDF	GB50XF120K ECONO2-6PACK IGBT module IR E78996 GB50XF120K IGBT 6PACK MODULE IRF E78996 E78996 IR GB50XF120K ECONO-2
GB50XF120K Abstract: No abstract text available Text: Bulletin PD - 94567 rev.A 05/03 GB50XF120K IGBT SIK PACK MODULE VCES = 1200V Features Low VCE on Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics	Original	PDF	GB50XF120K E78996 GB50XF120K
GB50XF120K Abstract: No abstract text available Text: Bulletin PD - 94567 rev.B 08/03 GB50XF120K IGBT SIXPACK MODULE VCES = 1200V Features Low VCE on Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics	Original	PDF	GB50XF120K E78996 GB50XF120K
95089 Abstract: GB50XF120K IGBT 6PACK MODULE GB50XF120K Text: GB50XF120K Vishay High Power Products IGBT Sixpack Module, 50 A FEATURES • Low diode VF • 10 µs short circuit capability RoHS • Square RBSOA COMPLIANT • Low VCE on non punch through IGBT technology • HEXFRED antiparallel diode with ultrasoft reverse	Original	PDF	GB50XF120K 18-Jul-08 95089 GB50XF120K IGBT 6PACK MODULE GB50XF120K
NV17 Abstract: 942 rectifier diode Text: GB50XF120K Vishay High Power Products IGBT Sixpack Module, 50 A FEATURES • Low diode VF • 10 µs short circuit capability RoHS • Square RBSOA COMPLIANT • Low VCE on non punch through IGBT technology • HEXFRED antiparallel diode with ultrasoft reverse	Original	PDF	GB50XF120K 12-Mar-07 NV17 942 rectifier diode
Untitled Abstract: No abstract text available Text: Bulletin I27283 11/06 GB50XF120K IGBT SIXPACK MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 50A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ=150°C • HEXFRED Antiparallel Diode with Ultrasoft	Original	PDF	I27283 GB50XF120K E78996 12-Mar-07