transistor 42-10a
Abstract: transistor 42-10a 3 pin mosfet 42-10a
Text: SC4210A 8-Pin N-FET Linear Regulator Controller POWER MANAGEMENT Description Features The SC4210A Linear Regulator Controller includes all the features required for an extremely low dropout linear regulator that uses an external N-channel MOSFET as the pass transistor. The device can operate from input
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SC4210A
SC4210A
FDB7030BL
transistor 42-10a
transistor 42-10a 3 pin
mosfet 42-10a
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transistor 42-10a
Abstract: transistor 42-10a 3 pin SC4210AIMSTRT SC4210 8224k0
Text: SC4210A 8-Pin N-FET Linear Regulator Controller POWER MANAGEMENT Description Features The SC4210A Linear Regulator Controller includes all the features required for an extremely low dropout linear regulator that uses an external N-channel MOSFET as the pass transistor. The device can operate from input
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SC4210A
SC4210A
FDB7030BL
transistor 42-10a
transistor 42-10a 3 pin
SC4210AIMSTRT
SC4210
8224k0
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transistor 42-10a
Abstract: transistor 42-10a 3 pin SC4210
Text: SC4210A 8-Pin N-FET Linear Regulator Controller POWER MANAGEMENT Description Features The SC4210A Linear Regulator Controller includes all the features required for an extremely low dropout linear regulator that uses an external N-channel MOSFET as the pass transistor. The device can operate from input
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SC4210A
SC4210A
FDB7030BL
transistor 42-10a
transistor 42-10a 3 pin
SC4210
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transistor 42-10a
Abstract: transistor 42-10a 3 pin 42-10a FDB7030BL MO-187
Text: SC4210A 8-Pin N-FET Linear Regulator Controller POWER MANAGEMENT Description Features The SC4210A linear regulator controller includes all the features required for an extremely low dropout linear regulator that uses an external N-channel MOSFET as the pass transistor. The device can operate from input
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SC4210A
SC4210A
MO-187,
transistor 42-10a
transistor 42-10a 3 pin
42-10a
FDB7030BL
MO-187
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SLUA476
Abstract: UC3832 SOIC-16 FDD3706
Text: Application Report SLUA476 – August 2008 Using the UC3832 Linear Controller with an NMOS Pass Element Chris Glaser . PMP - DC/DC Converters ABSTRACT This application note describes the design of a linear power supply solution using the
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SLUA476
UC3832
SOIC-16)
SLUA476
SOIC-16
FDD3706
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transistor 42-10a
Abstract: transistor 42-10a 3 pin pspice model gate driver FDB7030BL MO-187
Text: SC4210A 8-Pin N-FET Linear Regulator Controller POWER MANAGEMENT Description Features The SC4210A linear regulator controller includes all the features required for an extremely low dropout linear regulator that uses an external N-channel MOSFET as the pass transistor. The device can operate from input
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SC4210A
SC4210A
transistor 42-10a
transistor 42-10a 3 pin
pspice model gate driver
FDB7030BL
MO-187
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diode rj 93
Abstract: ma4p HP4291A M541 MA4PBL027 20E-14 W-band diode ODS-186
Text: HMICTM Silicon Beam-Lead PIN Diodes Features • • • • • • • • • • • MA4PBL027 V1 Case Style ODS-1302 Beam-Lead Device No Wirebonds Required Rugged Silicon-Glass Construction Silicon Nitride Passivation Polymer Scratch and Impact Protection
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MA4PBL027
ODS-1302
diode rj 93
ma4p
HP4291A
M541
MA4PBL027
20E-14
W-band diode
ODS-186
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Triac Z0109
Abstract: No abstract text available
Text: STEVAL-IHT005V2 Demonstration board with full 3.3 V ACS/Triac control using the STM32F100 Data brief • • • IEC 61000-4-4 pre-compliance test passed burst up to 8 kV IEC 61000-4-5 pre-compliance test passed (surge up to 2 kV) RoHS compliant Description
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STEVAL-IHT005V2
STM32F100
VIPer16L
48-pin,
32-bit
STM32F100C4T6B
DocID025092
Triac Z0109
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TRANSISTORS BJT list
Abstract: bjt differential amplifier bjt differential amplifier application circuits BJT amplifiers input output bjt npn transistor pnp germanium low power bjt pnp germanium bjt jfet discrete differential transistor pnp germanium small signal bjt power BJT PNP
Text: Application Report SLOA026A - April 2000 Understanding Basic Analog – Active Devices Ron Mancini Mixed Signal Products ABSTRACT This application report describes active devices and their use as the basic building blocks of all electronic equipment. Active devices, coupled with passive devices, create the
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SLOA026A
TRANSISTORS BJT list
bjt differential amplifier
bjt differential amplifier application circuits
BJT amplifiers
input output bjt npn transistor
pnp germanium low power bjt
pnp germanium bjt
jfet discrete differential transistor
pnp germanium small signal bjt
power BJT PNP
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30SPA0536
Abstract: 84-1LMI
Text: 27.0-33.0 GHz GaAs MMIC Power Amplifier May 2005 - Rev 20-May-05 30SPA0536 Features Chip Device Layout tio n Ka-Band 4 W Power Amplifier Balanced Design Provides Good Input/Output Match 21.0 dB Small Signal Gain +35.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing
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20-May-05
30SPA0536
MIL-STD-883
30SPA0536
84-1LMI
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Untitled
Abstract: No abstract text available
Text: 27.0-33.0 GHz GaAs MMIC Power Amplifier P1027-BD March 2007 - Rev 05-Mar-07 Features Ka-Band 4 W Power Amplifier Balanced Design Provides Good Input/Output Match 21.0 dB Small Signal Gain +35.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing
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P1027-BD
05-Mar-07
MIL-STD-883
XP1027-BD
XP1027-BD-000V
XP1027-BD-EV1
XP1027-BD
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p1027
Abstract: P1027-BD 30SPA0536 DM6030HK TS3332LD XP1027-BD XP1027-BD-000V XP1027-BD-EV1
Text: 27.0-33.0 GHz GaAs MMIC Power Amplifier P1027-BD March 2007 - Rev 27-Mar-07 Features Ka-Band 4 W Power Amplifier Balanced Design Provides Good Input/Output Match 21.0 dB Small Signal Gain +35.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing
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P1027-BD
27-Mar-07
MIL-STD-883
XP1027-BD
XP1027-BD-000V
XP1027-BD-EV1
XP1027-BD
p1027
P1027-BD
30SPA0536
DM6030HK
TS3332LD
XP1027-BD-000V
XP1027-BD-EV1
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30MPA0562
Abstract: 84-1LMI ka-band transistor
Text: 28.0-31.0 GHz GaAs MMIC Power Amplifier August 2005 - Rev 04-Aug-05 30MPA0562 Features Chip Device Layout tio n Ka-Band 1 W Power Amplifier 27.0 dB Small Signal Gain +30.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883
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04-Aug-05
30MPA0562
MIL-STD-883
30MPA0562
84-1LMI
ka-band transistor
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Untitled
Abstract: No abstract text available
Text: 27.0-33.0 GHz GaAs MMIC Power Amplifier May 2005 - Rev 20-May-05 30SPA0536 Features Chip Device Layout tio n Ka-Band 4 W Power Amplifier Balanced Design Provides Good Input/Output Match 21.0 dB Small Signal Gain +35.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing
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20-May-05
30SPA0536
MIL-STD-883
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ablestick
Abstract: 30SPA0557 84-1LMI
Text: 27.0-32.0 GHz GaAs MMIC Power Amplifier 30SPA0557 May 2005 - Rev 20-May-05 Features Chip Device Layout io n Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883
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30SPA0557
20-May-05
ablestick
30SPA0557
84-1LMI
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P1027-BD
Abstract: p1027 30SPA0536 DM6030HK TS3332LD XP1027-BD XP1027-BD-000V XP1027-BD-EV1 ka-band transistor
Text: 27.0-33.0 GHz GaAs MMIC Power Amplifier P1027-BD March 2007 - Rev 27-Mar-07 Features Ka-Band 4 W Power Amplifier Balanced Design Provides Good Input/Output Match 21.0 dB Small Signal Gain +35.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing
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P1027-BD
27-Mar-07
MIL-STD-883
XP1027-BD
XP1027-BD-000V
XP1027-BD-EV1
XP1027-BD
P1027-BD
p1027
30SPA0536
DM6030HK
TS3332LD
XP1027-BD-000V
XP1027-BD-EV1
ka-band transistor
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P1025-BD
Abstract: 30MPA0562 DM6030HK TS3332LD XP1025-BD XP1025-BD-000V ka-band bare
Text: 28.0-31.0 GHz GaAs MMIC Power Amplifier P1025-BD March 2007 - Rev 05-Mar-07 Features Ka-Band 1 W Power Amplifier 27.0 dB Small Signal Gain +30.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883
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P1025-BD
05-Mar-07
MIL-STD-883
XP1025-BD
XP1025-BD-000V
XP1025-BD-EV1
XP1025-BD
P1025-BD
30MPA0562
DM6030HK
TS3332LD
XP1025-BD-000V
ka-band bare
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Untitled
Abstract: No abstract text available
Text: 28.0-31.0 GHz GaAs MMIC Power Amplifier May 2005 - Rev 20-May-05 30MPA0562 Features Chip Device Layout tio n Ka-Band 1 W Power Amplifier 27.0 dB Small Signal Gain +30.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883
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20-May-05
30MPA0562
MIL-STD-883
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Untitled
Abstract: No abstract text available
Text: 27.0-32.0 GHz GaAs MMIC Power Amplifier 30SPA0557 May 2005 - Rev 20-May-05 Features Chip Device Layout io n Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883
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30SPA0557
20-May-05
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Untitled
Abstract: No abstract text available
Text: Data Sheet No.PD60180-C IR3220S FULLY PROTECTED H-BRIDGE FOR D.C. MOTOR Features The IR3220S is a fully protected dual high side switch I.C that integrates an H–bridge motor controller with two very efficient high side MOSFETs in a single 20-pin package. The IR3220S
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PD60180-C
IR3220S
IR3220S
20-pin
IRF7484
MS-012AA)
MS-013AC)
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IC 7484
Abstract: IR3220S IC 7484 pin diagram AN-1032 IRF7484 IRF7484Q shunt resistor current motor E-041 IR Sensor obstacle detection MOTOR DRIVER IC LM 2003
Text: Data Sheet No.PD60180-C IR3220S FULLY PROTECTED H-BRIDGE FOR D.C. MOTOR Features The IR3220S is a fully protected dual high side switch I.C that integrates an H–bridge motor controller with two very efficient high side MOSFETs in a single 20-pin package. The IR3220S
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PD60180-C
IR3220S
IR3220S
20-pin
IRF7484Q
MS-012AA)
MS-013AC)
IC 7484
IC 7484 pin diagram
AN-1032
IRF7484
shunt resistor current motor
E-041
IR Sensor obstacle detection
MOTOR DRIVER IC LM 2003
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3n84
Abstract: D29A4 C13P ring COUNTER SCR AUTOMOTIVE APPLICATIONS scr triggering 2N1770-8 C13F C13Y scs thyristor
Text: SCR I e« I C11 S E R IE S SE E 2N1770-8 PAG E 322 The General Electric C13 Complementary Silicon Controlled Rectifier CSCR is a threeterminal, planar-passivated PN PN device in the standard, low-cost plastic TO-98 JE D E C pack age. As CSCR’s, the C13P and the C13Y offer greater flexibility in circuit design through the
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2N1770-8
D29A4
2N34I5
3n84
D29A4
C13P
ring COUNTER
SCR AUTOMOTIVE APPLICATIONS
scr triggering
C13F
C13Y
scs thyristor
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR THYRISTOR CR3EM LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE OUTLINE DRAWING Dim ensions in mm VDRM .400V
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O-202
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CMK evox CAPACITOR
Abstract: capacitor f 1.0 j CMK evox mmk evox polyester capacitor stable low frequency crystal oscillator fet evox mmk evox cmk PMR Capacitors
Text: General information Application guide Typical applications of film capacitors Peak detector Multivibrator Passive filters In this application, C e.g. 1.0 |jF PMR or CMK will charge to the peak value of the signal to be detected, and hold the voltage impressed upon it. A polypropylene or poly
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