Untitled
Abstract: No abstract text available
Text: Micropac Industries, Inc – Microcircuits Division AN-9002 IPC Application Note: ote: Low Maintenance AC Powered Security ecurity Gate Mechanical Gate components: A typical Security Gate system consists of the gate, a rail or guide system, one or two motors,
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AN-9002
AN-900
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TO-226-AE
Abstract: BC108 characteristic JFET BF245 BC237
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers N–Channel — Depletion 2N5484 1 DRAIN 2N5486 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ TC = 25°C
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2N5484
2N5486
226AA)
V218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
TO-226-AE
BC108 characteristic
JFET BF245
BC237
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Untitled
Abstract: No abstract text available
Text: MOTOROLA QUAD 2-INPUT OR GATE QUAD 2-INPUT OR GATE The MC10103 is a quad 2-input OR gate. The MC10103 provides one gate w ith OR/NOR outputs. Pq = 25 mW typ/gate No Load tpd = 2.0 ns typ L SUFFIX CERAMIC PACKAGE CASE 620 t r, tf = 2.0 ns typ (20%-80%) 16
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OCR Scan
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MC10103
MC10103
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2N5486 MOTOROLA
Abstract: LMI24 2N5484 2N5484-2N5486 2N5484 MOTOROLA 2N5486 S229 2n5484 equivalent S119 S219
Text: MOTOROLA SEMICONDUCTOR — — TECHNICAL Order this document by 2N54841D DATA JFET VHF/UHF Amplifiers — Depletion N-Channel 1 DRAIN 3 GATE “6 I 2 SOURCE MHIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate–Source Voltage Drain Current Forward Gate Current
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2N54841D
MI-2447
81S521
602-2W609
OW7741
2N5486 MOTOROLA
LMI24
2N5484
2N5484-2N5486
2N5484 MOTOROLA
2N5486
S229
2n5484 equivalent
S119
S219
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mc10101
Abstract: No abstract text available
Text: MOTOROLA QUAD OR/NOR GATE QUAD OR/NOR GATE The MC10101 is a quad 2-input OR/NOR gate with one input from each gate common to pin 12. Pq = 25 m W typ/gate {No Load tpd = 2.0 ns typ t r, tf = 2.0 ns typ 20% -80% ) L SUFFIX CERAMIC PACKAGE CASE 620 1 P SUFFIX
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OCR Scan
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MC10101
MC10101
50-ohm
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2N5484
Abstract: 2N5486 MOTOROLA 2N5486 equivalent 2N5486 2N5484 MOTOROLA
Text: MOTOROLA Order this document by 2N5484/D SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers N–Channel — Depletion 2N5484 1 DRAIN 2N5486 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Drain Current Forward Gate Current
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2N5484/D
2N5484
2N5486
226AA)
2N5484
2N5486 MOTOROLA
2N5486 equivalent
2N5486
2N5484 MOTOROLA
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MGP2N60D
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP2N60D/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet MGP2N60D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching
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MGP2N60D/D
MGP2N60D
220AB
MGP2N60D
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MGP2N60D
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP2N60D/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet MGP2N60D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching
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MGP2N60D/D
MGP2N60D
220AB
MGP2N60D
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motorola JFET 2N3819
Abstract: BF245 application note BC237 transistor TO-92 bc108 N CHANNEL JFET 2N3819
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper Transistor N–Channel — Depletion J112 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Gate Voltage VDG – 35 Vdc Gate – Source Voltage VGS – 35 Vdc Gate Current IG 50 mAdc
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226AA)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
motorola JFET 2N3819
BF245 application note
BC237
transistor TO-92 bc108
N CHANNEL JFET 2N3819
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MC10102
Abstract: 0890
Text: MOTOROLA MCI0102 QUAD 2-INPUT NOR GATE QUAD 2-INPUT NOR GATE The MC10102 is a quad 2-input NOR gate. The MC10102 pro vides one gate with OR/NOR outputs. Pq = 25 m W typ/gate No Load tpd = 2.0 ns typ L SUFFIX CE RA M IC PACKAGE CASE 620 tr, tf = 2.0 ns typ (20°/^80% )
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OCR Scan
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MCI0102
MC10102
50-ohm
0890
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DL122
Abstract: MC10103
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad 2-Input OR Gate MC10103 The MC10103 is a quad 2–input OR gate. The MC10103 provides one gate with OR/NOR outputs. PD = 25 mW typ/gate No Load tpd = 2.0 ns typ tr, tf = 2.0 ns typ (20%–80%) L SUFFIX CERAMIC PACKAGE
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MC10103
MC10103
DL122
MC10103/D*
MC10103/D
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MC10102
Abstract: MC10102 motorola MC10102-D equivalent DL122 motorola 16 pin
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad 2-Input NOR Gate MC10102 The MC10102 is a quad 2–input NOR gate. The MC10102 provides one gate with OR/NOR outputs. PD = 25 mW typ/gate No Load tpd = 2.0 ns typ tr, tf = 2.0 ns typ (20%–80%) L SUFFIX CERAMIC PACKAGE
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MC10102
MC10102
MC10102/D*
MC10102/D
DL122
MC10102 motorola
MC10102-D equivalent
motorola 16 pin
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MC14501UB
Abstract: MC14XXXBCL MC14XXXBCP MC14XXXBD
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14501UB Triple Gate Dual 4–Input “NAND” Gate 2–Input “NOR/OR” Gate 8–Input “AND/NAND” Gate L SUFFIX CERAMIC CASE 620 The MC14501UB is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These
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MC14501UB
MC14501UB
75ture
MC14501UB/D*
MC14501UB/D
MC14XXXBCL
MC14XXXBCP
MC14XXXBD
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MC10101
Abstract: DL122 MC10101-D
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad OR/NOR Gate MC10101 The MC10101 is a quad 2–input OR/NOR gate with one input from each gate common to pin 12. PD = 25 mW typ/gate No Load tpd = 2.0 ns typ tr, tf = 2.0 ns typ (20%–80%) L SUFFIX CERAMIC PACKAGE
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MC10101
MC10101
DL122
MC10101/D*
MC10101/D
MC10101-D
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10503
Abstract: 10503/BEAJC
Text: M MOTOROLA Military 10503 Quad 2-Input OR Gate ELECTRICALLY TESTED PER: MPG 10503 The 10503 is a quad 2 input OR gate. The 10503 provides one gate with OR/NOR outputs. • 40 mW Max/Gate (No Load) • tpd = 2.0 ns typ • tr, tf = 2.0 ns typ (20% - 80%)
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10503/BXAJC
10503
10503/BEAJC
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mc10103
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad 2-Input OR Gate The MC10103 is a quad 2-input OR gate. The MC10103 provides one gate with OR/NOR outputs. Pq = 25 mW typ/gate No Load tpd = 2.0 ns typ tr, tf = 2.0 ns typ (20%-80%) L SUFFIX CERAMIC PACKAGE CASE 620-10
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OCR Scan
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MC10103
50-ohm
DL122
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motorola transistor ignition
Abstract: MGP15N40CL
Text: MOTOROLA Order this document by MGP15N40CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP15N40CL Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor IGBT features Gate–Emitter ESD protection, Gate Collector Over–
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MGP15N40CL/D
MGP15N40CL
motorola transistor ignition
MGP15N40CL
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MGP15N38CL
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP15N38CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP15N38CL Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor IGBT features Gate–Emitter ESD protection, Gate Collector Over–
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MGP15N38CL/D
MGP15N38CL
220AB
MGP15N38CL
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221A49
Abstract: MGP7N60E OP77
Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MGP7N60E/D DATA - DesignerkTM Data Sheet w Insulated Gate Bipoflar Transistor N-Channel Enhancement-Mode MGP7N60E Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination
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MGP7N60E/D
MGP7N60E
Oti21,
24W609
221A49
MGP7N60E
OP77
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ESD 141
Abstract: MGP20N63CL
Text: MOTOROLA Order this document by MGP20N63CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP20N63CL Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor IGBT features Gate–Emitter ESD protection, Gate Collector Over–
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MGP20N63CL/D
MGP20N63CL
220AB
ESD 141
MGP20N63CL
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3 phase IGBT inverter design by microcontroller
Abstract: STGIPS20K60 IGBT inverter design by microcontroller 3 phase IGBT inverter stgips10k60a 3 phase IGBT rectifier design by microcontroller SDIP-25L application note for STGIPL14K60 STGIPL14K60 3 phase bridge fully controlled rectifier
Text: IGBT intelligent power modules Bridge rectifier Microcontroller Gate driver Half bridge Gate driver Half bridge Gate driver Half bridge NTC temperature monitoring M Intelligent power module Feedback STMicroelectronics Compact and high-performance AC motor drive
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STGIPS10K60A
SDIP-25L
STGIPS14K60
STGIPL14K60
SDIP-38L
STGIPS20K60
FLIGBTINTE0710
3 phase IGBT inverter design by microcontroller
STGIPS20K60
IGBT inverter design by microcontroller
3 phase IGBT inverter
stgips10k60a
3 phase IGBT rectifier design by microcontroller
SDIP-25L
application note for STGIPL14K60
STGIPL14K60
3 phase bridge fully controlled rectifier
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A 720 transistor
Abstract: MGW12N120D
Text: MOTOROLA -SEMICONDUCTOR TECHNICAL DATA Advance information DataSheet MGW12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate This high voltage Insulated Gate Bipolar Transistor IGBT is co-packaged with a
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MGW12N120D
O-247
A 720 transistor
MGW12N120D
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tme 126
Abstract: MGW12N120 IC9012 Bipolar WPC
Text: MOTOROLA SEMICONDUCTOR = TECHNICAL DATA Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate MGW12N120 This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability.
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MGW12N120
O-247
10USminimum
tme 126
MGW12N120
IC9012
Bipolar WPC
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MGY25N120D
Abstract: No abstract text available
Text: . - MOTOROLA m~EMlcoNDu~ToR TECHNICAL DATA Advanceinformation DataSheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode MGY25N120D Silicon Gate This high voltage Insulated Gate Bipolar Transistor lGB~ is co-packaged with a
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MGY25N120D
O-264
MGY25N120D
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