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    GATE MOTOR Search Results

    GATE MOTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB67Z833SFTG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver / 3-Phase Brushless Motor Gate Driver / VVM(V)=-0.3~80 / P-WQFN40-0606-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TB67Z850SFTG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver / 3-Phase Brushless Motor Gate Driver / VVM(V)=-0.3~80 / P-VQFN32-0505-0.50-007 Visit Toshiba Electronic Devices & Storage Corporation
    TB67Z850HFTG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver / 3-Phase Brushless Motor Gate Driver / VVM(V)=-0.3~80 / P-VQFN32-0505-0.50-007 Visit Toshiba Electronic Devices & Storage Corporation
    TB67Z830HFTG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver / 3-Phase Brushless Motor Gate Driver / VVM(V)=-0.3~80 / P-VQFN32-0505-0.50-007 Visit Toshiba Electronic Devices & Storage Corporation
    TB67Z830SFTG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver / 3-Phase Brushless Motor Gate Driver / VVM(V)=-0.3~80 / P-VQFN32-0505-0.50-007 Visit Toshiba Electronic Devices & Storage Corporation

    GATE MOTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Micropac Industries, Inc – Microcircuits Division AN-9002 IPC Application Note: ote: Low Maintenance AC Powered Security ecurity Gate Mechanical Gate components: A typical Security Gate system consists of the gate, a rail or guide system, one or two motors,


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    AN-9002 AN-900 PDF

    TO-226-AE

    Abstract: BC108 characteristic JFET BF245 BC237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers N–Channel — Depletion 2N5484 1 DRAIN 2N5486 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ TC = 25°C


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    2N5484 2N5486 226AA) V218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 TO-226-AE BC108 characteristic JFET BF245 BC237 PDF

    2N5486 MOTOROLA

    Abstract: LMI24 2N5484 2N5484-2N5486 2N5484 MOTOROLA 2N5486 S229 2n5484 equivalent S119 S219
    Text: MOTOROLA SEMICONDUCTOR — — TECHNICAL Order this document by 2N54841D DATA JFET VHF/UHF Amplifiers — Depletion N-Channel 1 DRAIN 3 GATE “6 I 2 SOURCE MHIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate–Source Voltage Drain Current Forward Gate Current


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    2N54841D MI-2447 81S521 602-2W609 OW7741 2N5486 MOTOROLA LMI24 2N5484 2N5484-2N5486 2N5484 MOTOROLA 2N5486 S229 2n5484 equivalent S119 S219 PDF

    2N5484

    Abstract: 2N5486 MOTOROLA 2N5486 equivalent 2N5486 2N5484 MOTOROLA
    Text: MOTOROLA Order this document by 2N5484/D SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers N–Channel — Depletion 2N5484 1 DRAIN 2N5486 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Drain Current Forward Gate Current


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    2N5484/D 2N5484 2N5486 226AA) 2N5484 2N5486 MOTOROLA 2N5486 equivalent 2N5486 2N5484 MOTOROLA PDF

    MGP2N60D

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGP2N60D/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet MGP2N60D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching


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    MGP2N60D/D MGP2N60D 220AB MGP2N60D PDF

    MGP2N60D

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGP2N60D/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet MGP2N60D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching


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    MGP2N60D/D MGP2N60D 220AB MGP2N60D PDF

    motorola JFET 2N3819

    Abstract: BF245 application note BC237 transistor TO-92 bc108 N CHANNEL JFET 2N3819
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper Transistor N–Channel — Depletion J112 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Gate Voltage VDG – 35 Vdc Gate – Source Voltage VGS – 35 Vdc Gate Current IG 50 mAdc


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    226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 motorola JFET 2N3819 BF245 application note BC237 transistor TO-92 bc108 N CHANNEL JFET 2N3819 PDF

    DL122

    Abstract: MC10103
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad 2-Input OR Gate MC10103 The MC10103 is a quad 2–input OR gate. The MC10103 provides one gate with OR/NOR outputs. PD = 25 mW typ/gate No Load tpd = 2.0 ns typ tr, tf = 2.0 ns typ (20%–80%) L SUFFIX CERAMIC PACKAGE


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    MC10103 MC10103 DL122 MC10103/D* MC10103/D PDF

    MC10102

    Abstract: MC10102 motorola MC10102-D equivalent DL122 motorola 16 pin
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad 2-Input NOR Gate MC10102 The MC10102 is a quad 2–input NOR gate. The MC10102 provides one gate with OR/NOR outputs. PD = 25 mW typ/gate No Load tpd = 2.0 ns typ tr, tf = 2.0 ns typ (20%–80%) L SUFFIX CERAMIC PACKAGE


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    MC10102 MC10102 MC10102/D* MC10102/D DL122 MC10102 motorola MC10102-D equivalent motorola 16 pin PDF

    MC14501UB

    Abstract: MC14XXXBCL MC14XXXBCP MC14XXXBD
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14501UB Triple Gate Dual 4–Input “NAND” Gate 2–Input “NOR/OR” Gate 8–Input “AND/NAND” Gate L SUFFIX CERAMIC CASE 620 The MC14501UB is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These


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    MC14501UB MC14501UB 75ture MC14501UB/D* MC14501UB/D MC14XXXBCL MC14XXXBCP MC14XXXBD PDF

    MC10101

    Abstract: DL122 MC10101-D
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad OR/NOR Gate MC10101 The MC10101 is a quad 2–input OR/NOR gate with one input from each gate common to pin 12. PD = 25 mW typ/gate No Load tpd = 2.0 ns typ tr, tf = 2.0 ns typ (20%–80%) L SUFFIX CERAMIC PACKAGE


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    MC10101 MC10101 DL122 MC10101/D* MC10101/D MC10101-D PDF

    motorola transistor ignition

    Abstract: MGP15N40CL
    Text: MOTOROLA Order this document by MGP15N40CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP15N40CL Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor IGBT features Gate–Emitter ESD protection, Gate Collector Over–


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    MGP15N40CL/D MGP15N40CL motorola transistor ignition MGP15N40CL PDF

    MGP15N38CL

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGP15N38CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP15N38CL Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor IGBT features Gate–Emitter ESD protection, Gate Collector Over–


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    MGP15N38CL/D MGP15N38CL 220AB MGP15N38CL PDF

    221A49

    Abstract: MGP7N60E OP77
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MGP7N60E/D DATA - DesignerkTM Data Sheet w Insulated Gate Bipoflar Transistor N-Channel Enhancement-Mode MGP7N60E Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination


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    MGP7N60E/D MGP7N60E Oti21, 24W609 221A49 MGP7N60E OP77 PDF

    3 phase IGBT inverter design by microcontroller

    Abstract: STGIPS20K60 IGBT inverter design by microcontroller 3 phase IGBT inverter stgips10k60a 3 phase IGBT rectifier design by microcontroller SDIP-25L application note for STGIPL14K60 STGIPL14K60 3 phase bridge fully controlled rectifier
    Text: IGBT intelligent power modules Bridge rectifier Microcontroller Gate driver Half bridge Gate driver Half bridge Gate driver Half bridge NTC temperature monitoring M Intelligent power module Feedback STMicroelectronics Compact and high-performance AC motor drive


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    STGIPS10K60A SDIP-25L STGIPS14K60 STGIPL14K60 SDIP-38L STGIPS20K60 FLIGBTINTE0710 3 phase IGBT inverter design by microcontroller STGIPS20K60 IGBT inverter design by microcontroller 3 phase IGBT inverter stgips10k60a 3 phase IGBT rectifier design by microcontroller SDIP-25L application note for STGIPL14K60 STGIPL14K60 3 phase bridge fully controlled rectifier PDF

    A 720 transistor

    Abstract: MGW12N120D
    Text: MOTOROLA -SEMICONDUCTOR TECHNICAL DATA Advance information DataSheet MGW12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate This high voltage Insulated Gate Bipolar Transistor IGBT is co-packaged with a


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    MGW12N120D O-247 A 720 transistor MGW12N120D PDF

    tme 126

    Abstract: MGW12N120 IC9012 Bipolar WPC
    Text: MOTOROLA SEMICONDUCTOR = TECHNICAL DATA Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate MGW12N120 This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability.


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    MGW12N120 O-247 10USminimum tme 126 MGW12N120 IC9012 Bipolar WPC PDF

    MGY25N120D

    Abstract: No abstract text available
    Text: . - MOTOROLA m~EMlcoNDu~ToR TECHNICAL DATA Advanceinformation DataSheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode MGY25N120D Silicon Gate This high voltage Insulated Gate Bipolar Transistor lGB~ is co-packaged with a


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    MGY25N120D O-264 MGY25N120D PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA QUAD 2-INPUT OR GATE QUAD 2-INPUT OR GATE The MC10103 is a quad 2-input OR gate. The MC10103 provides one gate w ith OR/NOR outputs. Pq = 25 mW typ/gate No Load tpd = 2.0 ns typ L SUFFIX CERAMIC PACKAGE CASE 620 t r, tf = 2.0 ns typ (20%-80%) 16


    OCR Scan
    MC10103 MC10103 PDF

    mc10101

    Abstract: No abstract text available
    Text: MOTOROLA QUAD OR/NOR GATE QUAD OR/NOR GATE The MC10101 is a quad 2-input OR/NOR gate with one input from each gate common to pin 12. Pq = 25 m W typ/gate {No Load tpd = 2.0 ns typ t r, tf = 2.0 ns typ 20% -80% ) L SUFFIX CERAMIC PACKAGE CASE 620 1 P SUFFIX


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    MC10101 MC10101 50-ohm PDF

    MC10102

    Abstract: 0890
    Text: MOTOROLA MCI0102 QUAD 2-INPUT NOR GATE QUAD 2-INPUT NOR GATE The MC10102 is a quad 2-input NOR gate. The MC10102 pro­ vides one gate with OR/NOR outputs. Pq = 25 m W typ/gate No Load tpd = 2.0 ns typ L SUFFIX CE RA M IC PACKAGE CASE 620 tr, tf = 2.0 ns typ (20°/^80% )


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    MCI0102 MC10102 50-ohm 0890 PDF

    6156m

    Abstract: Motorola MC14070B
    Text: MC14070B MOTOROLA QUAD EXCLUSIVE "OR" GATE MC14077B CMOS S S I QUAD EXCLUSIVE “NOR” GATE QUAD EXCLUSIVE "OR" AND "NOR" GATES The MC14Q70B quad exclusive OR gate and the MC14077B quad exclusive NOR gate are constructed with MOS P-channel and N-channel enhancement mode devices in a single monolithic


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    MC14Q70B MC14077B MC14070B CD4030B CD4070B CD4077B 6156m Motorola MC14070B PDF

    10503

    Abstract: 10503/BEAJC
    Text: M MOTOROLA Military 10503 Quad 2-Input OR Gate ELECTRICALLY TESTED PER: MPG 10503 The 10503 is a quad 2 input OR gate. The 10503 provides one gate with OR/NOR outputs. • 40 mW Max/Gate (No Load) • tpd = 2.0 ns typ • tr, tf = 2.0 ns typ (20% - 80%)


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    10503/BXAJC 10503 10503/BEAJC PDF

    mc10103

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad 2-Input OR Gate The MC10103 is a quad 2-input OR gate. The MC10103 provides one gate with OR/NOR outputs. Pq = 25 mW typ/gate No Load tpd = 2.0 ns typ tr, tf = 2.0 ns typ (20%-80%) L SUFFIX CERAMIC PACKAGE CASE 620-10


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    MC10103 50-ohm DL122 PDF