GATE LOGICAL AND Search Results

TC534200F

Abstract: UTC A11 TC534200P
Contextual Info: TOSHIBA TC534200P/F SILICON STACKED GATE CMOS 262,144 WORD x 16 BIT/524,288 WORD x 8 BIT CMOS MASK ROM Description The TC534200P/F is a 4,194,304 bit read only memory organized as 262,144 words by 16 bits when BYTE is logical high and organized as 524,288 words by 8 bits when BY I t is logical low.

74c SERIES cmos logic data

Abstract: mm54c30 MM74C30 AN-90 cmos 74C
Contextual Info: MM54C30/MM74C30 Wm National Semiconductor MM54C30/MM74C30 8-Input NAND Gate General Description Features The logical gate employs complementary MOS CMOS to achieve wide power supply operating range, low power con­ sumption and high noise immunity. Function and pin out

TC5316200bP

Abstract: TC5316200BP/BF
Contextual Info: TOSHIBA TC5316200BP/BF SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS MASK ROM D escription The TC5316200BP/BF is a 16,777,216 bit read only memory organized as 1,048,576 words by 16 bits when BY I t is logical high, and organized as 2,097,152 words by 8 bits when BYTE is logical low.

MM74C30N

Abstract: MM54C30J MM74C30 MM54C30 MM74C30J AN-90 C1995 J14A
Contextual Info: MM54C30 MM74C30 8-Input NAND Gate General Description Features The logical gate employs complementary MOS CMOS to achieve wide power supply operating range low power consumption and high noise immunity Function and pin out compatibility with series 54 74 devices minimizes design

TC5316210

Abstract: Tc5316210cf
Contextual Info: TC5316210CP/CF TOSHIBA TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 16 MBIT 1 M WORD BY 16 BITS/2 M WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC5316210CP/CF is a 16,777,216-bit Read Only Memory organized as 1,048,576 words by 16 bits when BYTE is logical high, and as 2,097,152 words by 8 bits when BYTE is logical low.

Contextual Info: TC5332410BF/BFT TOSHIBA TOSHIBA MOS INTEGRATED CIRCUIT 32 MBIT 1 M WORD BY 32 BITS/2 SILICON GATE CMOS WORD BY 16 BITS CMOS MASK ROM DESCRIPTION The TC5332410BF/BFT is a 33,554,432-bit Read Only Memory organized as 1,048,576 words by 32 bits when DW/W is logical high, and as 2,097,152 words by 16 bits when DW/W is logical low.

TC534200CF

Contextual Info: TOSHIBA TC534200CP/CF/CFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 4 MBIT 256 K WORD BY 16 BITS/512 K WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC534200CP/CF is a 4,194,304-bit Read Only Memory organized as 262,144 words by 16 bits when BYTE is logical high, and as 524,288 words by 8 bits when BYTE is logical low.

XC6200

Abstract: XC009 PN16 XC6209 XC6216 XC6264 C031 vhdl code up down counter
Contextual Info:  XC6200 Field Programmable Gate Arrays Table Of Contents Features Description Architecture Logical and Physical Organization Additional Routing Resources Magic Wires Global Wires Function Unit Cell Logic Functions Routing Switches Clock Distribution Clear Distribution

TC5332200AF

Abstract: TC53322
Contextual Info: TO SH IB A TC5332200AF/AFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 32 MBIT 2,097,152 WORD BY 16 BITS/4,194,304 WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC53322Ö0AF/AFT is a 33,554,432-bit Read Only Memory organized as 2,097,152 words by 16 bits when BYTE is logical high, and as 4,194,304 words by 8 bits when BYTE is logical low.

A10AL

Abstract: TC538200AFT
Contextual Info: TO SH IB A TC538200AP/AF/AFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 8 MBIT 512 K WORD BY 16 BITS/1 M WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC538200AP/AF is a 8,388,608-bit Read Only Memory organized as 524,288 words by 16 bits when BYTE is logical high, and as 1,048,576 words by 8 bits when BYTE is logical low.

XC6200

Abstract: p61 s43 XC6264 w1p77 w56 transistor BUF C038 N48 pqfp Package Typ P194 B1 121 W97 diode ak38
Contextual Info:  XC6200 Field Programmable Gate Arrays Table Of Contents Features Description Architecture Logical and Physical Organization Additional Routing Resources Magic Wires Global Wires Function Unit Cell Logic Functions Routing Switches Clock Distribution Clear Distribution

TC5316200CP

Abstract: TC5316200CF
Contextual Info: T O S H IB A TC5316200CP/CF/CFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 16 MBIT 1 M WORD BY 16 BITS/2 M WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC5316200CP/CF/CFT is a 16,777,216-bit Read Only Memory organized as 1,048,576 words by 16 bits when BYTE is logical high, and as 2,097,152 words by 8 bits when BYTE is logical low.

Integrated CMOS Systems

Abstract: 4 bit ALU USING VLSI ICS10000 ICS10045 ICS10080 ICS10130 ICS10220G ICSI0250 gpR circuit design
Contextual Info: H H Integrated S b S CMOS • ■ Systems ICS10000 Series Gate Arrays Features • Silicon gate 1.5 um drawn advanced CMOS technology with 2 levels of interconnection • High speed: 0.52 ns for a 2 input NAND with fanout=2 logical loads at 25 °C and Vdd=5V

Contextual Info: TO SHIBA TC5332410BF/BFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 32 MBIT 1 M W O RD BY 32 BITS/2 M W O RD BY 16 BITS CMOS MASK ROM DESCRIPTION The TC5332410BF/BFT is a 33,554,432-bit Read Only Memory organized as 1,048,576 words by 32 bits when DW/W is logical high, and as 2,097,152 words by 16 bits when DW/W is logical low.

MM54C30J

Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 10/19/95 Last Update Date: 05/19/97 Last Major Revision Date: 04/02/97 MNMM54C30-X REV 1A0 8-INPUT NAND GATE General Description The logical gate employs complementary MOS CMOS to achieve wide power supply operating

C1995

Abstract: DM74ALS DM74ALS09 DM74ALS09M DM74ALS09N M14A N14A
Contextual Info: DM74ALS09 Quad 2-Input AND Gate with Open Collector Outputs General Description Features This device contains four independent gates each of which performs the logic AND function The open-collector outputs require external pull-up resistors for proper logical operation

Contextual Info: C J MTTL I MC500/400 series "OR" e x p a n d a b le \ DUAL «-INPUT "AND" GATE I MC527 • MC577 MC427 • MC477 This device consists of two 4-input logical AND gates. Each gate has a single point connected externally which enables a single wire OR expansion using the

DM74ALS09

Abstract: DM74ALS09M DM74ALS09N M14A MS-001 N14A
Contextual Info: Revised February 2000 DM74ALS09 Quad 2-Input AND Gate with Open Collector Outputs General Description Features This device contains four independent gates, each of which performs the logic AND function. The open-collector outputs require external pull-up resistors for proper logical

Contextual Info: December 1989 DM74ALS09 Quad 2-Input AND Gate with Open Collector Outputs General Description Features This device contains four independent gates, each of which performs the logic AND function. The open-collector out­ puts require external pull-up resistors for proper logical op­

Contextual Info: National Semiconductor DM74ALS09 Quad 2-Input AND Gate with Open Collector Outputs General Description Features This device contains four independent gates, each of which performs the logic AND function. The open-collector out­ puts require external pull-up resistors for proper logical op­

Contextual Info: National Semiconductor DM74ALS09 Quad 2-Input AND Gate with Open Collector Outputs General Description Features This device contains four independent gates, each of which performs the logic AND function. The open-collector out­ puts require external pull-up resistors for proper logical op­

C1995

Abstract: DM74ALS DM74ALS03B DM74ALS03BM DM74ALS03BN M14A N14A
Contextual Info: DM74ALS03B Quad 2-Input NAND Gate with Open Collector Outputs General Description Features This device contains four independent gates each of which performs the logic NAND function The open-collector outputs require external pull-up resistors for proper logical operation

Contextual Info: AVG Semiconductors DDi Technical Data Triple 3-Input NAND Gate with Open Collector Ouputs N Suffix Plastic DIP AVG-001 Case This device contains three independent gates, each of which performs the logic AND function. The open-collector outputs require external pull-up resistors for proper logical operation.

DM74ALS03B

Abstract: DM74ALS03BM DM74ALS03BN M14A MS-001 N14A
Contextual Info: Revised February 2000 DM74ALS03B Quad 2-Input NAND Gate with Open Collector Outputs General Description Features This device contains four independent gates, each of which performs the logic NAND function. The open-collector outputs require external pull-up resistors for proper logical