GATE ARRAY Search Results

LZ95300

Abstract: SHARP LZ93 LZ95
Contextual Info: CMOS Gate Array CMOS Gate Array Gate Array Series High Speed Low Power Supply High Speed BiCMOS LZ93 Series LZ95 Series LZ96 Series LZ97 Series ' F.O. = 3 , Al = 2mm 300 to 5000 gates, 1.7ns/gate* 300 to 10000 gates, 1.2ns/gate* 300 to 4000 gates, 9.5ns/gate*

acumos

Abstract: list of n channel fet A300 MF10 nmos pmos array n channel fet array
Contextual Info: A300 Analog/Digital Gate Array DESCRIPTION The Acumos A300 is a high performance analog/digital gate array. The gate array can perform analog and/or digital functions. The gate array is silicon gate construction using a double­ poly p-well process. The minimum gate channel

nmos pmos array

Abstract: mf10 A300 list of n channel fet Acumos n channel fet array
Contextual Info: A300 Analog/Digital Gate Array DESCRIPTION The Acumos A300 is a high performance analog/digital gate array. The gate array can perform analog and/or digital functions. The gate array is silicon gate construction using a double­ poly p-well process. The minimum gate channel

LSI CMOS GATE ARRAY

Contextual Info: A 1c • CMOS Gate Arrays # MN5COOO Series Sea-of-Gate (Some products under development) Internal gate delay time 0.110ns 3.3V, F.O. = 2, Standard wiring length Gate density Max. 150 gate (number of laid-down gates) Gate use ratio: 35 - 45% (2-layer wiring), 65 - 85% (three-layer wiring)

Contextual Info: > Gate Arrays and Cell-based ICs Gate Arrays Thanks to a short turnaround time and ease of design, gate arrays are being employed in a wide variety of applications. Sharp offers a broad range of gate array series, including channel-free "Seaof-Gate" type gate arrays and low voltage CMOS

MN53010

Abstract: MN53007 MN53003 MN53015 MN53020 MN-53020 mn53005 MN-53
Contextual Info: ASIC • CMOS Gate Arrays # Series Lineup Series Delay Time MN53ÛC0 Features 1.4ns VDD =5V Low gate, Few pin package MN56000 Standard channel type gate array, Actel pin compatible gate array support MN56A00 Sea-of-gate, Optional bit, Word RAM/ROM possible

LZ95300

Abstract: NT315 LZ96650 LZ9G5100
Contextual Info: GATE ARRAY GATE ARRAYS ★ Under development SFASIC ♦ Features • A variety of feature-intensive devices are available, including the “sea of gate” gate arrays featuring a wide range of functional blocks and high speeds, and CMOS gate arrays with low operating voltage.

Field-Programmable Gate Arrays

Contextual Info: TPC14 SERIES CMOS FIELD-PROGRAMMABLE GATE ARRAYS ^ JA N U A RY 1993 • • • • • • Gate Capacities from < 1,000 to > 10,000 Gate Array Gates Gate Capacities from < 2,500 to > 25,000

clcc 68

Abstract: CLCC 44 Fairchild 100K series ECL CPGA routing CLCC 24 layout CERAMIC LEADLESS CHIP CARRIER LCC 44 CERAMIC leaded CHIP CARRIER CLCC 68 CPGA132 CPGA CLCC 84
Contextual Info: Gate Array Products FAIRCHILD A Schlum berger Com pany First/Second Q uarter 1986 Gate Array Division Fairchild Gate Array Division offers com plete in-house design and production capabilities for high perform ance ECL and CMOS gate arrays. Featured with all Fairchild ECL gate arrays are speed/power

LZ95300

Abstract: lz95 000GATES
Contextual Info: GATEARRAYS AND CELL-BASED fCs Lineup of Gate Arrays Available Gate Count Channel Type Gate count LZ95 series « Internal gate 1.2 ns/gate Vcc = 5 V, F.O. = 3, 4 = 2 mm n? Input butter 2.4 ns (Vcc = 5 V, F.O. = 3 , i = 2mm) CD a Output butter Supply voltage

Contextual Info: GATEARRAYS AND CELL-BASED ICs Channel Type Low-voftage Type Sea-of-Gate Type High-density Sea-of-Gate Type Thanks to a short turnaround time and ease of desigh, gate arrays are being employed in a wide variety of applications. Sharp offers a broard range of gate array series, including channel-free “ Seaof-Gate” type gate arrays and low voltage CMOS

Contextual Info: m i Enhanced I/O Airays SEMICONDUCTORS 1.0 micron Gate Arrays October 1992 AMI’s ASIC product line has been expanded to include gate arrays targeted toward high pin count, low gate count applications. FPGA conversions to gate array, disk drive, computer, and telecom applications with high I/O, low gate count ratios are perfect

sla6050

Abstract: SLA6270 SLA6080 SLA6430 SLA6620 SLA6000 AA132 SLA6270* plcc F44-6 SLA6140
Contextual Info: SLA6000 / - y .2 ' CMOS HIGH SPEED GATE ARRAY • • • • High Speed Silicon Gate CMOS Technology TTL and CMOS I/O Compatible High Output Drive Compatible Gate Densities from 513 to 6,206 Gates • DESCRIPTION The SLA6000 series consists of a group of 8 CMOS gate arrays with gate counts from 513 to 6,206 gates. The

FGE0500

Abstract: FGE2000 FGE2500 F100K ECL 300 series and design guide Fairchild 100K series ECL Fairchild ZN 1010 1240 picosecond la 4440 LA 4440 circuit diagram PS-1050
Contextual Info: FGE Series ECL Gate Arrays F A IR C H IL D A Schlumberc J/n A 005596 January 1986 n Description 0r>y ^ Gate Array Division FiC The FGE Series of ECL gate arrays are the fastest silicon gate arrays commercially available. These advanced ECL gate arrays, ranging from 100 to 2840 equivalent gates, offer

LZ9G5100

Contextual Info: GATE ARRAYS AND CELL-BASED ICs High-Density Sea-of-Gate type Gate c o u n t i LZ9G series Internal gate 0.9 ns/gate Vcc = 5 V, F.O. = 2, l = 2 mm Input buffer 2.7 ns (Vcc = 5 V, F.O. =2, I = 2 mm) Output buffer j 5.0 ns (Vcc = 5 V, C l 750 gates 2.0 to 5.5 V

CTR34

Abstract: FGE2000 BL33B DFI01 Fairchild ZN 1010 L1332 JKI02 ctr-34 SHR04 OAI43
Contextual Info: NATL SEMICOND -CMEnORY> □2E D | ts D iia b □□bi3n ? I FGE Series ECL Gate Arrays FAIRCHILD A Schlumberger Company Description FGE Series Features The FGE Series of ECL gate arrays are the fastest silicon gate arrays commercially available. These advanced ECL gate ar­

transistor Bc 540

Abstract: BC 241 BC 511 description of transistor bc 148 pf958 SLA6028 bc 148 transistor 107ps BC 247 transistor bc 548
Contextual Info: PF958-02 SLA60000 Series High Density Gate Array ● 0.25µm CMOS Gate Array ● Low power consumption ● Covered from 99k to 2,519k raw gates • DESCRIPTION The SLA60000 Series are CMOS Gate Arrays which are adopting on 0.25µm silicon gate process with 3

4009S

Abstract: LZ95300 lz93 LZ95
Contextual Info: CM O S Gate Array LZ93 Series LZ93 Series • CMOS Gate Array Description ■ The LZ93 series CMOS gate array provides 300 to 5000 gates of line up with high speed and low power consumption. It is fabricated using 1.6 ,«m CMOS silicon gate/ double metal technology.

1N3064

Abstract: 1N916 TE1000 TE3000
Contextual Info: DATA SHEET Bipolar Gate Arrays TE1000 Series Gate Array DESCRIPTION The TE1000 high-speed gate array is a member o f the Customized TTL-ECL Gate Array family, designed using advanced oxil-isolated OXIL bipolar technology. It features 1000 internal gates and has a total of 96 inputs,

SHARP LZ93

Abstract: 74ls series gate
Contextual Info: CM OS Gate Array LZ96 Series LZ96 Series • CMOS Gate Array ■ Description 1. CMOS process 2. Number of gates : 300, 650, 1170. 2000, and 4000 3. Internal gate delay 9.5ns/gate 1.5V operating voltage 4. Macro cell : 95cells 74LS cell : 126cells 5. I/O level : CMOS level

Contextual Info: ACT 3 Field Programmable Gate Arrays Features • Gate Capacities from Less than 1,000 to G reater than 10,000 Gate A rray Gates • Gate Capacities from Less than 2,500 to G reater than 25,000 PLD/LCA ™ Equivalent Gates • Replace from 30 to 340 T T L Packages

Contextual Info: DATA SHEET Bipolar Gate Arrays LS2000 Series Gate Array DESCRIPTION CAD FEATURES The LS2000 high-speed gate array is designed using advanced oxil-isolated OXIL bipolar technology. It is compatible with the TTL-ECL series o f customized gate arrays. It features 2000 internal gates and has a total of

Fairchild ZN 1010

Abstract: GENERAL INSTRUMENT west 2500 ic ZN 415 FGE2000
Contextual Info: FGE Series ECL Gate Arrays PAIRCHIL.D A Schlum berc T'HO Qr>y 005596 January 1986 Description U/v\A m b The FGE Series of ECL gate arrays are the fastest silicon gate arrays com m ercially available. These advanced ECL gate arrays, ranging from 100 to 2840 equivalent gates, offer

tc140g

Abstract: TC140G37 TC140G27 TC140G54 TC140G44 TC140G12 TC140G68 toshiba tc140g27 TC140G09 TC140G18
Contextual Info: *1A’ li ' 'S/Si _ TOSHIBA 1t TOSHIBA AMERICA ELECTRONIC COMPOMEWTS, IIMC 1.0 micron TC140G CMOS Gate Array Features Description • Process: 1.0 micron drawn HC2MOS Si-gate double layer metal Raw gates: 2K to 172K Usable gates: up to 68K Gate speed: 0.4ns 2-input NAND gate, fanout - 2, tpd.