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    GAP3SLT33 Search Results

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    GAP3SLT33 Price and Stock

    GeneSic Semiconductor Inc GAP3SLT33-214

    DIODE SIC 3.3KV 300MA DO214AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GAP3SLT33-214 Reel 3,000 3,000
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    • 10000 $7.83004
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    Mouser Electronics GAP3SLT33-214 5,729
    • 1 $10.75
    • 10 $9.79
    • 100 $8.92
    • 1000 $8.12
    • 10000 $7.82
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    Verical GAP3SLT33-214 3,000 3,000
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    • 10000 $7.801
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    GAP3SLT33-214 2,898 6
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    • 10 $15.1756
    • 100 $13.4027
    • 1000 $12.3245
    • 10000 $12.0586
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    GAP3SLT33-214 2,133 1
    • 1 $9.011
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    • 100 $9.011
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    Arrow Electronics GAP3SLT33-214 3,000 18 Weeks 3,000
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    GAP3SLT33-214 Cut Strips 2,133 18 Weeks 1
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    • 100 $8.269
    • 1000 $8.264
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    Newark GAP3SLT33-214 Cut Tape 3,000
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    NAC GAP3SLT33-214 Reel 2,898 1
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    GeneSic Semiconductor Inc GAP3SLT33-220FP

    DIODE SIC 3.3KV 300MA TO220FP
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    DigiKey GAP3SLT33-220FP Tube 8,000
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    Newark GAP3SLT33-220FP Bulk 1,000
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    NAC GAP3SLT33-220FP Tube 50
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    GeneSic Semiconductor Inc GAP3SLT33-214..

    3300V 0.3A Do-214 Sic Schottky Mps/Reel Rohs Compliant: Yes |Genesic Semiconductor GAP3SLT33-214..
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    Newark GAP3SLT33-214.. Reel 3,000
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    Navitas Semiconductor GAP3SLT33-214

    SiC Schottky Diode - 3300V - 0.3A - DO-214 - Single/Surface Mount - Tape&Reel
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    Onlinecomponents.com GAP3SLT33-214
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    Avnet Silica GAP3SLT33-214 19 Weeks 3,000
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    Navitas Semiconductor GAP3SLT33-220FP

    3300V 0.3A TO-220-FP SiC Schottky MPS (Alt: GAP3SLT33-220FP)
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    Avnet Silica GAP3SLT33-220FP 19 Weeks 8,000
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    GAP3SLT33 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GAP3SLT33-214 GeneSiC Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, SIC SCHOTTKY DIODE 3330V .3A Original PDF
    GAP3SLT33-220FP GeneSiC Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTKY 3.3KV 0.3A TO220FP Original PDF

    GAP3SLT33 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: GAP3SLT33-214 Silicon Carbide Power Schottky Diode VRRM IF Tc ≤ 125°C QC Features Package •       RoHS Compliant Industry’s leading low leakage currents 175 °C maximum operating temperature Electrically isolated base-plate Positive temperature coefficient of VF


    Original
    PDF GAP3SLT33-214 214AA GAP3SLT33 39E-14 01E-11 00E-10 00E-03 00E-01

    Untitled

    Abstract: No abstract text available
    Text: GAP3SLT33-220FP Silicon Carbide Power Schottky Diode VRRM IF Tc ≤ 125°C QC Features Package •       RoHS Compliant Industry’s leading low leakage currents 175 °C maximum operating temperature Electrically isolated base-plate Positive temperature coefficient of VF


    Original
    PDF GAP3SLT33-220FP 220FP GAP3SLT33 39E-14 01E-11 00E-10 00E-03 00E-01

    Untitled

    Abstract: No abstract text available
    Text: GAP3SLT33-220FP SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GAP3SLT33-220FP. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 04-SEP-2013 $ * * GeneSiC Semiconductor Inc.


    Original
    PDF GAP3SLT33-220FP GAP3SLT33-220FP. 04-SEP-2013 GAP3SLT33-220FP GAP3SLT33 39E-14 01E-11 00E-10

    Untitled

    Abstract: No abstract text available
    Text: GAP3SLT33-220FP Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •       RoHS Compliant 3300 V Schottky rectifier 175 °C maximum operating temperature Electrically isolated base-plate Positive temperature coefficient of VF


    Original
    PDF GAP3SLT33-220FP 220FP rec-24) GAP3SLT33 39E-14 01E-11 00E-10 00E-03

    Untitled

    Abstract: No abstract text available
    Text: GAP3SLT33-214 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GAP3SLT33-214. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 09-SEP-2013 $ * * GeneSiC Semiconductor Inc.


    Original
    PDF GAP3SLT33-214 GAP3SLT33-214. 09-SEP-2013 GAP3SLT33-214 GAP3SLT33 39E-14 01E-11 00E-10

    Untitled

    Abstract: No abstract text available
    Text: GAP3SLT33-214 Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •       RoHS Compliant 3300 V Schottky rectifier 175 °C maximum operating temperature Electrically isolated base-plate Positive temperature coefficient of VF


    Original
    PDF GAP3SLT33-214 214AA GAP3SLT33 39E-14 01E-11 00E-10 00E-03 00E-01

    Untitled

    Abstract: No abstract text available
    Text: GAP3SLT33-220FP Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •       RoHS Compliant 3300 V Schottky rectifier 175 °C maximum operating temperature Electrically isolated base-plate Positive temperature coefficient of VF


    Original
    PDF GAP3SLT33-220FP 220FP recoverMP-24) GAP3SLT33 39E-14 01E-11 00E-10 00E-03

    Untitled

    Abstract: No abstract text available
    Text: GAP3SLT33-214 Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •       RoHS Compliant 3300 V Schottky rectifier 175 °C maximum operating temperature Electrically isolated base-plate Positive temperature coefficient of VF


    Original
    PDF GAP3SLT33-214 214AA MP-24) GAP3SLT33 39E-14 01E-11 00E-10 00E-03