GAN ON SIC HEMT PULSED POWER TRANSISTOR PEAK Search Results

Contextual Info: MAGX-003135-120L00 GaN on SiC HEMT Pulsed Power Transistor 120 W Peak, 3.1 to 3.5 GHz, 300 s Pulse, 10% Duty Rev. V2 Features •         GaN on SiC Depletion-Mode HEMT Transistor Common-Source Configuration Broadband Class AB Operation

Contextual Info: MAGX-000912-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty Production V1 18 Aug 11 Features •       GaN depletion mode HEMT microwave transistor Internally matched Common source configuration

MAGX-001214-250L00

Abstract: Gan on silicon transistor Gan transistor 1350 transistor Gan hemt transistor GaN TRANSISTOR 180 L-Band 1200-1400 MHz Hemt transistor
Contextual Info: MAGX-001214-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty Production V1 18 Aug 11 Features •       GaN depletion mode HEMT microwave transistor Internally matched Common source configuration

Gan on silicon

Abstract: 960-1215MHz jtids amplifier 250W MAGX-000
Contextual Info: MAGX-000912-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty Production V1 18 Aug 11 Features •       GaN depletion mode HEMT microwave transistor Internally matched Common source configuration

MAGX-000912-125L00

Abstract: transistor 1.25W MAGX000912125L00 sic wafer 100 mm MAGX-000
Contextual Info: MAGX-000912-125L00 GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty Production V1 18 Aug 11 Features •       GaN depletion mode HEMT microwave transistor Internally matched Common source configuration

Contextual Info: MAGX-001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 s Pulse, 2% Duty Features Rev. V3 MAGX-001090-600L00 • GaN on SiC Depletion-Mode Transistor Technology  Internally Matched  Common-Source Configuration

Contextual Info: MAGX-000912-125L00 GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty Production V1 18 Aug 11 Features •       GaN depletion mode HEMT microwave transistor Internally matched Common source configuration

Contextual Info: MAGX-001214-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty Production V1 18 Aug 11 Features •       GaN depletion mode HEMT microwave transistor Internally matched Common source configuration

Contextual Info: MAGX-000912-500L00 MAGX-000912-500L0S GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 s Pulse, 10% Duty Features Rev. V3 MAGX-000912-500L00 • GaN on SiC Depletion-Mode Transistor Technology  Internally matched  Common-Source configuration

Contextual Info: MAGX-001214-650L00 GaN on SiC HEMT Pulsed Power Transistor 650 W Peak, 1200-1400 MHz, 300 s Pulse, 10% Duty Features Rev. V1 MAGX-001214-650L00 • GaN on SiC Depletion-Mode Transistor Technology  Internally Matched  Common-Source Configuration  Broadband Class AB Operation

Contextual Info: MAGX-001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 s Pulse, 2% Duty Features Rev. V4 MAGX-001090-600L00 • GaN on SiC Depletion-Mode Transistor Technology  Internally Matched  Common-Source Configuration

L-Band 1200-1400 MHz

Contextual Info: MAGX-001214-125L00 GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty Production V1 18 Aug 11 Features •       GaN depletion mode HEMT microwave transistor Internally matched Common source configuration

Contextual Info: MAGX-001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 s Pulse, 2% Duty Features Rev. V5 MAGX-001090-600L00 • GaN on SiC Depletion-Mode Transistor Technology  Internally Matched  Common-Source Configuration

Contextual Info: MAGX-000912-500L00 MAGX-000912-500L0S GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 s Pulse, 10% Duty Features Rev. V5 MAGX-000912-500L00 • GaN on SiC Depletion-Mode Transistor Technology  Internally matched  Common-Source configuration

Contextual Info: MAGX-001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor 500W Peak, 1200-1400 MHz, 300 µs Pulse, 10% Duty Rev. V1 Features •       GaN on SiC Depletion-Mode Transistor Technology Internally Matched

Contextual Info: MAGX-001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 1200-1400 MHz, 300 s Pulse, 10% Duty Features •       Rev. V2 MAGX-001214-500L00 GaN on SiC D-Mode Transistor Technology Internally Matched Common-Source Configuration

Contextual Info: 1011GN-700ELM 700 Watts – 70% Efficiency Mode-S ELM, Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 1011GN-700ELM is a common source, class AB, GaN on SiC HEMT power transistor specifically designed for Mode-S ELM Applications. It is capable of delivering 700 Watts of pulsed peak power

thermal analysis and its application to high power gan hemt amplifiers

Abstract: heat and mass transfer CuMoCu MMIC doherty 113C 157C 300C Designing with Field Effect Transistors
Contextual Info: Thermal Analysis and its application to High Power GaN HEMT Amplifiers A. Prejs, S. Wood, R. Pengelly, W. Pribble Cree Inc., Durham, NC 27703 USA Abstract – A systematic and consistent approach to the thermal modeling and measurement of GaN on SiC HEMT power transistors is described. Since the power density of such

MG1007-42

Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Contextual Info: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are

combiner THEORY

Abstract: amplifier 400W GaN microwave amplifier 100W 28V GaN amplifier 100W DSASW0033875 transformer matsunaga RFMD HEMT GaN SiC transistor 3,5Ghz, power 100w RF amplifier 400W WP100318
Contextual Info: AN RFMD WHITE PAPER RFMD. ® Wideband 400W Pulsed Power GaN HEMT Amplifiers Matthew J. Poulton, Karthik Krishnamurthy, Jay Martin, Bart Landberg, Rama Vetury, David Aichele RF Micro Devices, Inc. RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, and PowerStar® are trademarks of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective

ofdm predistortion

Abstract: CGH21120 transistors cross reference cgh40120F Digital Transistors Cross Reference CGH25120F RF power transistors cross reference GaN on SiC HEMT Pulsed Power Transistor Peak digital Pre-distortion Gan hemt transistor
Contextual Info: May 2009 Short range wireless UWB GPS and satellite  GaN HEMT transistors Advances in high power GaN HEMT transistors By Simon Wood, Carl Platis, Don Farrell, Brad Millon, Bill Pribble, Peter Smith, Ray Pengelly, and Jim Milligan, Cree Inc. G allium nitride (GaN) HEMT based

Contextual Info: August 25, 2014 MACOM Extends Industry Leading GaN Portfolio with New 15 W GaN on SiC Pulsed Power Transistor Unmatched Transistor Delivers 63% Drain Efficiency with 50 V Operation over DC-3.5 GHz LOWELL, Mass.- BUSINESS WIRE - M/A-COM Technology Solutions Inc. ("MACOM"), a leading supplier of high performance

Contextual Info: T1G4020036-FL 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers

Contextual Info: T1G4020036-FS 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers