GaN amplifier temperature compensation
Abstract: GAN temperature compensation 20k ohm potentiometer GaN amplifier hemt biasing thermistor 40k table NPTB00025 GaN Bias 25 watt NPT25100 AN009
Text: APPLICATION NOTE AN-009 GaN Essentials AN-009: Bias Sequencing and Temperature Compensation for GaN HEMTs NITRONEX CORPORATION 1 OCTOBER 2008 APPLICATION NOTE AN-009 GaN Essentials: Bias Sequencing and Temperature Compensation of GaN HEMTs 1. Table of Contents
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AN-009
AN-009:
NPT25100
GaN amplifier temperature compensation
GAN temperature compensation
20k ohm potentiometer
GaN amplifier
hemt biasing
thermistor 40k table
NPTB00025
GaN Bias 25 watt
AN009
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NPTB0004
Abstract: GaN amplifier 100W GaN Bias 25 watt vmos fet NPT25100 NPTB00004 NPTB00025 GaN amplifier temperature compensation future scope of wiMAX NPT25015
Text: APPLICATION NOTE AN-010 GaN Essentials AN-010: GaN for LDMOS Users NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-010 GaN Essentials: GaN for LDMOS Users 1. Table of Contents 1. TABLE OF CONTENTS. 2
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AN-010
AN-010:
NPT25100
NPTB0004
GaN amplifier 100W
GaN Bias 25 watt
vmos fet
NPTB00004
NPTB00025
GaN amplifier temperature compensation
future scope of wiMAX
NPT25015
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GaN amplifier temperature compensation
Abstract: No abstract text available
Text: Part Number: QBS-561 Broadband 32 Watt GaN Power Amplifier 2400 to 6000 MHz high power, class AB design utilizing GaN technology Features *Similar Model • 32 Watts Typical Saturated Output Power • Rugged GaN Technology • Adaptive Biasing to Promote Efficiency
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QBS-561
QBS-561
GaN amplifier temperature compensation
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Abstract: No abstract text available
Text: Part Number: QBS-560 Broadband 32 Watt GaN Power Amplifier 700 to 2500 MHz high power, class AB design utilizing GaN technology Features o 32 Watts Typical Saturated Output Power o Microprocessor Based Control o Rugged GaN Technology o Adaptive Biasing to Promote Efficiency
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QBS-560
QBS-560
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QBS-559
Abstract: No abstract text available
Text: Part Number: QBS-559 Broadband 50 Watt GaN Power Amplifier 20 to 800 MHz high power, class AB design utilizing GaN technology Features *Similar Model • 65 Watts Typical Saturated Output Power • Rugged GaN Technology • Adaptive Biasing to Promote Efficiency
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QBS-559
QBS-559
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BZX385-C11
Abstract: zener diode A29
Text: AN11130 Bias module for 50 V GaN demonstration boards Rev. 1 — 8 December 2011 Application note Document information Info Content Keywords GaN, bias Abstract This application note describes a bias controller module for GaN HEMT RF power transistors. It provides constant quiescent drain current with
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AN11130
BZX385-C11
zener diode A29
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Untitled
Abstract: No abstract text available
Text: ISO 9001:2008 Certified AMCOM Communications, Inc. Product Brochure April 2015 ISO 9001:2008 Certified Registration # 220501.1Q ISO 9001:2008 Certified Section 1 - AMCOM Communications, Inc. AMCOM was established in December 1996 by a group of microwave engineers experienced in both
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FETDRV
Abstract: No abstract text available
Text: Sample & Buy Product Folder Support & Community Tools & Software Technical Documents LMP92066 SNAS634 – MARCH 2014 LMP92066 Dual Temperature-Controlled DAC with Integrated EEPROM and Output ON/OFF Control 1 Features 3 Description • The LMP92066 is a highly integrated temperaturecontrolled dual DAC. Both DACs can be programmed
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LMP92066
SNAS634
LMP92066
FETDRV
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FETDRV
Abstract: No abstract text available
Text: Sample & Buy Product Folder Support & Community Tools & Software Technical Documents LMP92066 SNAS634 – MARCH 2014 LMP92066 Dual Temperature-Controlled DAC with Integrated EEPROM and Output ON/OFF Control 1 Features 3 Description • The LMP92066 is a highly integrated temperaturecontrolled dual DAC. Both DACs can be programmed
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LMP92066
SNAS634
LMP92066
FETDRV
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fetdrv1
Abstract: FETDRV
Text: Sample & Buy Product Folder Support & Community Tools & Software Technical Documents LMP92066 SNAS634 – MARCH 2014 LMP92066 Dual Temperature-Controlled DAC with Integrated EEPROM and Output ON/OFF Control 1 Features 3 Description • The LMP92066 is a highly integrated temperaturecontrolled dual DAC. Both DACs can be programmed
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LMP92066
SNAS634
LMP92066
fetdrv1
FETDRV
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GaN amplifier
Abstract: GaN amplifier temperature compensation SM2560-47GN GaN temperature compensation RF connector rack-mounted modular 17W2 rf gan amplifier
Text: Model SM2560-47GN 2500 - 6000 MHz 50 Watt Power Amplifier FOR MILITARY APPLICATIONS PRELIMINARY The SM2560-47GN is a 2.5 to 6.0 GHz solid state GaN amplifier designed for various commercial and military applications. The amplifier provides 45 dB of linear gain with a typical Psat of +47
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SM2560-47GN
SM2560-47GN
Conn00
GaN amplifier
GaN amplifier temperature compensation
GaN temperature compensation
RF connector
rack-mounted modular
17W2
rf gan amplifier
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817B OPTOCOUPLER 4-PIN
Abstract: optocoupler 817C optocoupler 817a optocoupler 817b 817C optocoupler OPTOCOUPLER 817c data sheet 817c OPTO-coupler 817c 4 pin phototransistor 4 pin optocoupler 817a LTV-817C
Text: Analog Discrete Interface & Logic Optoelectronics Optoelectronics Power Solutions Power Conversion Power Conversion Circuits • ac to dc Power Supplies • ac to dc Battery Chargers • dc to dc Converters Optoelectronics Components • Optocouplers • Optically Isolated Error Amplifier
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BB 509 varicap diode
Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s
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Abstract: No abstract text available
Text: RF2363 Preliminary '8$/%$1' 9 /2: 12,6 $03/, ,(5 7\SLFDO $SSOLFDWLRQV • GSM/DCS Dual-Band Handsets • General Purpose Amplification • Cellular/PCS Dual-Band Handsets • Commercial and Consumer Systems GENERAL PURPOSE AMPLIFIERS 4 3URGXFW 'HVFULSWLRQ
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RF2363
RF2363
950MHz
1850MHz
900MHz
1900MHz
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GaN amplifier temperature compensation
Abstract: 10MF 35V GAN temperature compensation AN060 XD010-24S-D2F schematic diagram bluetooth video d2f schematic ER35
Text: XD010-24S-D2F Y XD010-24SD2F(Y) 1930 MHz to 1990 MHz Class A/AB 12 W CDMA Driver Amplifier 1930 MHz to 1990 MHz CLASS A/AB 12 W CDMA DRIVER AMPLIFIER NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Y Part Number) Package: D Product Description Features
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XD010-24S-D2F
XD010-24SD2F
EDS-102932
GaN amplifier temperature compensation
10MF 35V
GAN temperature compensation
AN060
schematic diagram bluetooth video
d2f schematic
ER35
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10MF 35V
Abstract: XD010-04S-D4F AN060 GaN amplifier temperature compensation AGC AMPLIFIER RFMD
Text: XD010-04S-D4F Y XD010-04SD4F(Y) 350 MHz to 600 MHz Class AB 12 W Power Amplifier Module 350 MHz to 600 MHz CLASS AB 12 W POWER AMPLIFIER MODULE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Y Part Number) Package: D Product Description Features
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XD010-04S-D4F
XD010-04SD4F
AN-060
EDS-104259
10MF 35V
AN060
GaN amplifier temperature compensation
AGC AMPLIFIER RFMD
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10MF 35V
Abstract: "InP HBT" InP transistor HEMT AN060 XD010-12S-D4F GaN Bias 25 watt GaN temperature compensation
Text: XD010-12S-D4F Y XD010-12SD4F(Y) 869 MHz to 894 MHz Class AB 15 W Power Amplifier Module 869 MHz to 894 MHz CLASS AB 15 W POWER AMPLIFIER MODULE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Y Part Number) Package: D Product Description Features
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XD010-12S-D4F
XD010-12SD4F
EDS-102934
10MF 35V
"InP HBT"
InP transistor HEMT
AN060
GaN Bias 25 watt
GaN temperature compensation
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SDM-08120
Abstract: 08120 GAN temperature compensation AN067
Text: SDM-08120 Y SDM-08120(Y) 869 MHz to 894 MHz Class AB 130 W Power Amplifier Module 869 MHz to 894 MHz CLASS AB 130 W POWER AMPLIFIER MODULE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Y Part Number) Product Description Features Available in RoHS Compliant
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SDM-08120
unit-to-uni04208
AN054,
EDS-104208
08120
GAN temperature compensation
AN067
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AN067
Abstract: SDM-09120 AN054 GaN amplifier temperature compensation
Text: SDM-09120 Y SDM-09120(Y) Low Noise, High Gain SiGe HBT 925 MHz to 960 MHz CLASS AB 130 W POWER AMPLIFIER MODULE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Y Part Number) Product Description Features Available in RoHS Compliant Packaging
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SDM-09120
interDS-104211
AN054,
EDS-104211
AN067
AN054
GaN amplifier temperature compensation
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GSM repeater circuit
Abstract: AN060 XD010-14S-D4F repeater gsm
Text: XD010-14S-D4F Y XD010-14SD4F(Y) 925 MHz to 960 MHz Class A/AB 15 W Power Amplifier Module 925 MHz to 960 MHz CLASS A/AB 15 W POWER AMPLIFIER MODULE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Y Part Number) Package: D Product Description Features
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XD010-14S-D4F
XD010-14SD4F
EDS-102936
GSM repeater circuit
AN060
repeater gsm
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XD010-22S-D2FY
Abstract: 10MF 35V GSM repeater circuit XD010-22S-D2F GaN amplifier temperature compensation GSM module BLOCK diagram AN060 GAN temperature compensation repeater gsm
Text: XD010-22S-D2F Y XD010-22SD2F(Y) 1805 Mhz to 1880 MHz Class A/AB 12 W power Amplifier Module 1805 MHz to 1880 MHz CLASS A/AB 12 W POWER AMPLIFIER MODULE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Y Part Number) Package: D Product Description
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XD010-22S-D2F
XD010-22SD2F
EDS-102930
XD010-22S-D2FY
10MF 35V
GSM repeater circuit
GaN amplifier temperature compensation
GSM module BLOCK diagram
AN060
GAN temperature compensation
repeater gsm
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HMC934LP5E
Abstract: No abstract text available
Text: October 2011 OFF-THE-SHELF Analog, Digital & Mixed-Signal ICs, Modules, Subsystems & Instrumentation New Instrumentation Website www.tm-hittite.com! New Automatic Gain Control Product Line! Complete 50 to 800 MHz IF-AGC Solution in 25 mm² SMT Package Hittite introduces the first product in the new Automatic Gain Control product line. The HMC992LP5E
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HMC992LP5E
HMC992LP5E
NL-1011
HMC934LP5E
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Untitled
Abstract: No abstract text available
Text: XD010-51S-D4F Y XD010-51SD4F(Y) 902 MHz to 928 MHz CLASS A/AB 15 W POWER AMPLIFIER MODULE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Y Part Number) Package: D Product Description Features Available in RoHS Compliant Packaging 50 Ω RF Impedance
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XD010-51SD4F
XD010-51S-D4F
1000pF,
EDS-105061
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Untitled
Abstract: No abstract text available
Text: RF2314 I MICRO-DEVICES GEN ER AL PURPOSE LOW NOISE AMPLIFIER T y p ic a l A p p lic a tio n s • Broadband Gain Blocks Driver Stage for Power Amplifiers • Final PA for Low-Power Applications Oscillator Loop Amplifiers GENERAL PURPOSE AMPLIFIERS • IF or RF Buffer Amplifiers
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RF2314
150MHz,
900MHz,
1900MHz,
2400MHz,
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