Untitled
Abstract: No abstract text available
Text: Technologies GmbH & Co KG Closed Loop Hall Current Sensor CYHCS-P This Hall Effect current sensor is based on the closed loop compensating principle and designed with a high galvanic isolation between primary and secondary circuits. It can be used for measurement of DC and AC current, pulse currents etc. The output of the transducer reflects the
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--15V
D-85464
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Untitled
Abstract: No abstract text available
Text: Technologies GmbH & Co KG Closed Loop Hall Current Sensor CYHCS-D4C This Hall Effect current sensor is based on closed loop compensating principle and designed with a high galvanic isolation between primary and secondary circuits. It can be used for measurement of DC and AC current, pulse currents etc. The output of the transducer reflects
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D-85464
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ADM2484E
Abstract: SD103C ADP3330
Text: 500 kbps, ESD Protected, Half-/Full-Duplex, iCoupler, Isolated RS-485 Transceiver ADM2484E FEATURES FUNCTIONAL BLOCK DIAGRAM VDD2 VDD1 ADM2484E DE GALVANIC ISOLATION TxD Y Z A RxD B RE GND1 GND2 06984-001 Isolated, RS-485/RS-422 transceiver, configurable as half- or
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RS-485
ADM2484E
RS-485/RS-422
RS-485-A-1998
UL1577
03-27-2007-B
16-Lead
RW-16)
ADM2484E
SD103C
ADP3330
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lem current lt 100
Abstract: LEM Components
Text: Current Transducer LT 4000-T IPN = 4000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current
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4000-T
lem current lt 100
LEM Components
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current SENSOR
Abstract: "Current Sensor" CS1000EK waveform of hall effect sensor CS400EK hall effect sensor for current measurement CS200EK
Text: CS1000EK Dismountable Hall-Effect Current Sensor Series Product Information Introduction:CS1000EK Series is a new generation of open -loop current sensor based on the principle of Hall effect. It is applicable for the measuring of DC, AC, pulse and complex waveform current with galvanic
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CS1000EK
CS200EKCS400EKCS600EKCS800EKS1000EK
004006008001000A
5KV/50Hz/1min
current SENSOR
"Current Sensor"
waveform of hall effect sensor
CS400EK
hall effect sensor for current measurement
CS200EK
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MARKING CODE Zi sot363
Abstract: WRS SOT363 Marking Code ZI ZI Marking Code transistor sot-363 marking ZI 198S Transistor WRS
Text: SIEMENS BCR 198S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, driver circuit •Two galvanic internal isolated Transistors in one package ■Built in bias resistor (R1=47k£i, R2=47kQ) Type Marking Ordering Code Pin Configuration
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OCR Scan
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Q62702-C2419
OT-363
27llector-base
MARKING CODE Zi sot363
WRS SOT363
Marking Code ZI
ZI Marking Code transistor
sot-363 marking ZI
198S
Transistor WRS
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5b1 transistor
Abstract: transistor 5b1 transistor bc qe TRANSISTOR MARKING TE SOT363 Marking 1cs sot marking 1cs FR1E marking code YA Transistor 6c2 transistor
Text: SIEMENS BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications 4 • High current gain 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package 2 1 Type
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OCR Scan
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Q62702-C2372
OT-363
Mav-12-1998
BC847S
av-12-1998
5b1 transistor
transistor 5b1
transistor bc qe
TRANSISTOR MARKING TE SOT363
Marking 1cs sot
marking 1cs
FR1E
marking code YA Transistor
6c2 transistor
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Untitled
Abstract: No abstract text available
Text: SIEMENS BC 846S NPN Silicon AF Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with high matching in one package 11 az t.£. FI iïl R Lü
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OCR Scan
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Q62702-C2529
OT-363
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sot 23-5 marking code
Abstract: CMWSH-4
Text: Central CMWSH-4 TM Semiconductor Corp. SURFACE MOUNT SUPERminiTM DUAL ISOLATED SILICON SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMWSH-4, 40V, Low VF, consists of two galvanically isolated SUPERminiTM Silicon Schottky diodes. The CMWSH-4 has been designed for use in
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OT-343
100mA
14-November
sot 23-5 marking code
CMWSH-4
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846PN
Abstract: VQE 11E
Text: SIEMENS BC 846PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation
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846PN
EHA07193
846PN
Q62702-C2537
OT-363
VQE 11E
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Untitled
Abstract: No abstract text available
Text: Industrial DC/DC CONVERTER MGDI-100 Wide Input : 100W POWER Industrial Grade 4:1 & 5:1 Wide Input Single Output Metallic Case - 1 500 VDC Isolation • Wide input range • Nominal power up to 100 W • High efficiency typ. 88% • Soft start • Galvanic isolation 1.500 VDC according to EN 60950
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MGDI-100
FC06-054
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Untitled
Abstract: No abstract text available
Text: Industrial DC/DC CONVERTER MGDI-26 Wide Input : 25W POWER Industrial Grade 4:1 Wide Input Single Output Metallic Case - 1.500 VDC Isolation • Wide input range • Nominal power of 25 W • Wide temperature range : -40°C/+95°C case • Soft start • Galvanic isolation 1.500 VDC according to EN60950
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MGDI-26
EN60950
FC99-044
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Untitled
Abstract: No abstract text available
Text: Industrial DC/DC CONVERTER MGDI-100 Wide Input : 100W POWER Industrial Grade 5:1 Wide Input Single Output Metallic Case - 1.500 VDC Isolation • Wide input range • Nominal power up to 100 W • High efficiency typ. 88% • Soft start • Galvanic isolation 1.500 VDC according to EN 60950
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MGDI-100
FC06-054
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In 0 K63
Abstract: sot 363 marking tm CMKD6263 marking MA sot-363 MARKING d3 sot363
Text: Central CMKD6263 SURFACE MOUNT ULTRAmini TRIPLE ISOLATED HIGH VOLTAGE SILICON SCHOTTKY DIODES TM TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD6263 contains three 3 galvanically isolated, high voltage Silicon Schottky diodes, epoxy molded in a SOT-363 surface
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CMKD6263
CMKD6263
OT-363
21-November
In 0 K63
sot 363 marking tm
marking MA sot-363
MARKING d3 sot363
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MT29C4G96MAZBACJG-5 IT
Abstract: No abstract text available
Text: Pulse Transformer with Double Secondary Winding Pulse Transformers IT series Galvanic separation of drive and power circuit Voltage resistance up to 4kV Approvals Ignition current up to 1A Turns ratio up to 3:1:1 Features and benefits Galvanic separation with secondary winding.
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sot23 s1a marking
Abstract: marking code S1A sot23
Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906
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SMBT3904.
MMBT3904
SMBT3904S:
SMBT3906.
MMBT3906
SMBT3904/MMBT3904
SMBT3904S
OT363
sot23 s1a marking
marking code S1A sot23
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scr firing
Abstract: EIA-422-B EIA-485-A scr firing circuit EIA-485 rs485 scr 5w EIA-485-A termination rs485 termination GSCB6-CT002
Text: Green Power Solutions srl Via Greto di Cornigliano 6R - 16152 Genova , Italy Phone: +39-010-659 1869 Fax: +39-010-659 1870 Web: www.gpsemi.it E-mail: info@gpsemi.it GSCB6-C RS485 & CANBUS communication interface board. Full galvanic insulation Protection against communication channel shorts
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RS485
RS422/RS485
TIA/EIA-422-B
TIA/EIA-485-A.
GSCB6-CT002
scr firing
EIA-422-B
EIA-485-A
scr firing circuit
EIA-485
rs485
scr 5w
EIA-485-A termination
rs485 termination
GSCB6-CT002
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AEC-Q100 optocoupler
Abstract: No abstract text available
Text: ISO7421E-Q1 www.ti.com SLLSEA5B – MARCH 2012 – REVISED JUNE 2012 Low-Power Dual Digital Isolators Check for Samples: ISO7421E-Q1 FEATURES DESCRIPTION • • The ISO7421E-Q1 provides double galvanic isolation of up to 2.5 KVrms for 1 minute per UL. This digital
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ISO7421E-Q1
AEC-Q100
AEC-Q100 optocoupler
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MARKING CODE CCB
Abstract: BC847S
Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see
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BC846S/
BC846U/
BC847S
BC846S
BC847S:
BC846U
EHA07178
MARKING CODE CCB
BC847S
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VIE150-12S4
Abstract: VIE150-12S fin heat sink igbt IC100
Text: ISOSMART IGBT Module VIE150-12S4 IC = 150 A = 1200 V VCES Intelligent Power Module IPM with integrated galvanic isolation interface High Short Circuit SOA Capability 3 3 4 5 6 7 8 9 10 Preliminary data 2 Driver 1 1 Protection Isolation 2 Symbol Test Conditions
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VIE150-12S4
IC100
VIE150-12S4
VIE150-12S
fin heat sink igbt
IC100
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VIE100-12S4
Abstract: VIE100-12S IC100 reset ic
Text: ISOSMART IGBT Module VIE100-12S4 IC = 100 A = 1200 V VCES Intelligent Power Module IPM with integrated galvanic isolation interface High Short Circuit SOA Capability 3 3 4 5 6 7 8 9 10 Preliminary data 2 Driver 1 1 Protection Isolation 2 Symbol Test Conditions
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VIE100-12S4
IC100
VIE100-12S4
VIE100-12S
IC100
reset ic
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transformerless power inverter
Abstract: leakage current transducer AC lem ct 02-p CT 0.4-TP LEM
Text: Current Transducers CT 0.1 . 0.4-P For the electronic measurement of small currents: AC,DC, mixed, with a galvanic isolation between the primary circuit and the secondary circuit. IPN = ± 100.400 mA VOUT = ± 5 V Electrical data Primary nominal current rms
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500Hz.
transformerless power inverter
leakage current transducer AC
lem ct 02-p
CT 0.4-TP LEM
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5045-04A
Abstract: HAS 50-S
Text: Current Transducer HAS 50 . 600-S For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). IPN = 50 . 600 A VOUT = ± 4 V Electrical data
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600-S
100-S
200-S
300-S
400-S
500-S
5045-04A
HAS 50-S
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VD-300 T
Abstract: No abstract text available
Text: Voltage Transducer LV 100-300 VPN = 300 V For the electronic measurement of voltages : DC, AC, pulsed., with a galvanic isolation between the primary circuit high voltage and the secondary circuit (electronic circuit). Electrical data V PN VP I PN RM Primary nominal r.m.s. voltage
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