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    GAIN Search Results

    GAIN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LM108AL Rochester Electronics LLC LM108 - Super Gain Op Amp Visit Rochester Electronics LLC Buy
    LM108AJ-8/B Rochester Electronics LLC LM108 - Super Gain Op Amp Visit Rochester Electronics LLC Buy
    CLC522A/B2A Rochester Electronics LLC CLC522 - Wideband Amplifier, Variable-Gain - Dual marked (5962-9451701M2A) Visit Rochester Electronics LLC Buy
    CLC522A/BCA Rochester Electronics LLC CLC522 - Wideband Amplifier, Variable-Gain - Dual marked (5962-9451701MCA) Visit Rochester Electronics LLC Buy
    A82370-16 Rochester Electronics LLC Multifunction Peripheral, CMOS, CPGA132, PGA-132 Visit Rochester Electronics LLC Buy
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    GAIN Price and Stock

    Siretta Ltd DELTA12B-X-SMAM-S-S-17-HIGH-GAIN

    RF ANT 173MHZ WHIP STR SMA MALE
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    DigiKey DELTA12B-X-SMAM-S-S-17-HIGH-GAIN Bulk 13 1
    • 1 $21.45
    • 10 $15.671
    • 100 $12.5346
    • 1000 $11.575
    • 10000 $11.575
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    Jabil Photonics JP-EDFA-HGAIN-2525

    25DBM DWDM EDFA MODULE
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    DigiKey JP-EDFA-HGAIN-2525 Bulk 2 1
    • 1 $3050.14
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    NXP Semiconductors LFBGAINTPZA

    ADAPTER 516-BGA TO PGA
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    DigiKey LFBGAINTPZA Box 1
    • 1 $96.38
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    Avnet Americas LFBGAINTPZA Box 1
    • 1 $94.095
    • 10 $92.565
    • 100 $87.975
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    Mouser Electronics LFBGAINTPZA
    • 1 $95.62
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    Newark LFBGAINTPZA Bulk 1
    • 1 $100.22
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    NXP Semiconductors LFBGAINTPWA

    ADAPTER 416-BGA TO PGA
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    DigiKey LFBGAINTPWA Box 1
    • 1 $96.38
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    Avnet Americas LFBGAINTPWA Box 1
    • 1 $94.095
    • 10 $92.565
    • 100 $87.975
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    Mouser Electronics LFBGAINTPWA
    • 1 $95.62
    • 10 $95.62
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    NXP Semiconductors LFBGAINTPV1A

    356 PIN 0.8 MM BGA TO PGA ADAPTE
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    DigiKey LFBGAINTPV1A Bulk 1
    • 1 $251.34
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    Avnet Americas LFBGAINTPV1A Box 1
    • 1 $188.19
    • 10 $185.13
    • 100 $175.95
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    Mouser Electronics LFBGAINTPV1A
    • 1 $203.18
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    Newark LFBGAINTPV1A Bulk 1
    • 1 $218.79
    • 10 $212.67
    • 100 $200.43
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    Find more GAIN price and stock on Findchips.com

    GAIN Datasheets (112)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    700-0023 GainSpan RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI TRACE ANT Original PDF
    700-0023-100 GainSpan RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI TRACE ANT Original PDF
    700-0024 GainSpan RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI U.FL ANT Original PDF
    700-0024-100 GainSpan RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI U.FL ANT Original PDF
    700-0025 GainSpan RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI TRACE ANT Original PDF
    700-0025-100 GainSpan RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI TRACE ANT Original PDF
    700-0026 GainSpan RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI U.FL ANT Original PDF
    700-0026-100 GainSpan RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI U.FL ANT Original PDF
    700-0031 GainSpan RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI TRACE ANT Original PDF
    700-0031-100 GainSpan RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI TRACE ANT Original PDF
    700-0033 GainSpan RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI TRACE ANT Original PDF
    700-0033-100 GainSpan RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI TRACE ANT Original PDF
    700-0034 GainSpan RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI U.FL ANT Original PDF
    700-0034-100 GainSpan RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI U.FL ANT Original PDF
    700-0036 GainSpan RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI TRACE + U.FL Original PDF
    700-0036-100 GainSpan RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI TRACE + U.FL Original PDF
    700-0045 GainSpan RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI U.FL ANT Original PDF
    700-0045-100 GainSpan RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI U.FL ANT Original PDF
    700-0047 GainSpan RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI CHIP ANT Original PDF
    700-0047-100 GainSpan RF/IF and RFID - RF Transceiver Modules - RF TXRX MODULE WIFI CHIP ANT Original PDF

    GAIN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TLE2037, TLE2037A EXCALIBUR LOW -NOISE HIGH-SPEED PRECISION DECOM PENSATED OPERATIONAL AM PLIFIERS D3454, MAY 1990 - REVISED APRIL 1991 available features Outstanding Combination of DC Precision and AC Performance: Gain-Bandwldth Product. . . 80 MHz Typ V


    OCR Scan     		PDF TLE2037, TLE2037A D3454,

    UM5583

    Abstract: UM55 SPKP rs 355 integrated circuits 5583H
    Text: UMC UM5583 3 Sec Recording / Playback 1C Features • "BEEP" sound indicates to start recording and memory full for manual playback ■ Built-In AGC Automatic Gain Control to enlarge input dynamic range ■ Built-in low pass filter ■ Built-in microphone amplifier


    OCR Scan     		PDF UM5583 UM5583 UM5583H UM55 SPKP rs 355 integrated circuits 5583H

    2SD1294

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SD1294 POWER REGULATOR FOR LINE OPERATED TV. Unit in mm # 3 .2 ± Q 2 FEATURES : . Excellent Wide Safe Operating Area (80 W.s z at Tc=25°C) . eo . Included Abalanche Diode : Vz=60±15V . High DC Current Gain


    OCR Scan     		PDF 2SD1294 2SD1294

    Untitled

    Abstract: No abstract text available
    Text: Texas Instruments TGA8300 Monolithic 2- to 18-GHz Amplifier Features • ■ ■ ■ ■ 18-dBm typical output power at 1-dB gain compression 6.5-dB gain Input and output SWR less than 2:1 Size: 0.093 x 0.064 x 0.006 inch Recessed V ^ m gate structure Description


    OCR Scan     		PDF TGA8300 18-GHz 18-dBm TGA8300

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TY P E 2SC3420 STROBO FLASH APPLICATIONS. Unit in nun MEDIMUM POWER AMPLIFIER APPLICATIONS. Ì.3MAX. FEATURES: . High DC Current Gain : hpE=140~600 Vc e =2V, Ic =0.5A bFE=70(Min.) (Vqj;=2V, Ic =4A) . Low Saturation Voltage : vCE(sat)=l •0(Max.) (Ic =4A, Ib =0.1A)


    OCR Scan     		PDF 2SC3420

    Untitled

    Abstract: No abstract text available
    Text: TLE2024, TLE2024A, TLE2024B, TLE2024Y EXCALIBUR HIGH-SPEED LOW-POWER PRECISION QUAD OPERATIONAL AMPLIFIERS D 3 2 6 5 , M A Y 1 9 8 9 - R E V IS E D O C T O B E R 1991 available features Supply Current . . . 1 mA Max High Open-Loop Gain . . . 7 V/jiV 137 dB Typ


    OCR Scan     		PDF TLE2024, TLE2024A, TLE2024B, TLE2024Y 2024Y

    TRANSISTOR Marking XB PNP

    Abstract: YTS3906
    Text: TOSHIBA TRANSISTOR YTS3906 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : IcEV“” 50nA(Max.), IuEV“ 50nA(Max.) 0 VCE— 30V, VBE-3V . Excellent DC Current Gain Linearity


    OCR Scan     		PDF YTS3906 -50mA, YTS3904 300ne TRANSISTOR Marking XB PNP YTS3906

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SD2079 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2079 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 10 ±0.3 High DC Current Gain : hpE (i) = 2000 (Min.) Low Saturation Voltage : V q e (sat) ( 1 ) = 1-5V (Max.)


    OCR Scan     		PDF 2SD2079 2SB1381. MAX30

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3265 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3265 Unit in mm LOW FREQUENCY POWER AMPLIFER APPLICATIONS POWER SWITCHING APPLICATIONS h0.5 High DC Current Gain : hpg (i) = 100~320 Low Saturation Voltage : VcE(sat) = 0.4 V (Max.)


    OCR Scan     		PDF 2SC3265 2SA1298 O-236MOD SC-59CEO

    TIM1414-4LA-371

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM1414-4LA-371 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Linear Gain SYMBOL PldB Drain Current Power Added Efficiency 3rd Order Intermodulation


    OCR Scan     		PDF TIM1414-4LA-371 TIM1414-4LA-371

    MG50G2CL3

    Abstract: Mg50G2cl mg50g2
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG50G2CL3 HIGH POWER SWITCHING APPLICATIONS. Unit in ram MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector Is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-In to 1 Package. . High DC Current Gain: hFE=100 Min. (Ic=50A)


    OCR Scan     		PDF MG50G2CL3 MG50G2CL3 Mg50G2cl mg50g2

    2SB907

    Abstract: No abstract text available
    Text: SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS -2SB907 U nit in mm SW ITCH IN G APPLICATIONS. H A M M E R DRIVE, PULSE M O T O R DRIVE APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. High DC Current Gain : hFE(l) =2000 (Min.) (Vc e = - 2V, I c = - 1 A ) Low Saturation Voltage


    OCR Scan     		PDF -2SB907 2SD1222. 2SB907 2SB907

    MG15G1AL3

    Abstract: MG15G1AL3 equivalent mg15g1 mg15g MG15G1AL
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG15G1AL3 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-In Free Wheeling Diode. . High DC Current Gain : hFE=100 Min. (Ic=15A)


    OCR Scan     		PDF MG15G1AL3 MG15G1AL3 MG15G1AL3 equivalent mg15g1 mg15g MG15G1AL

    Untitled

    Abstract: No abstract text available
    Text: HN3C17FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU Unit in mm V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS 2-1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : N F=1.3dB (f=2GHz) • High Gain : |S2l e|2 = 9-0dB (f=2GHz)


    OCR Scan     		PDF HN3C17FU 16GHz

    MG400H1FK1

    Abstract: LF400A
    Text: MG400H1FK1 G TR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : h]?E=200 Min. . Low Saturation Voltage


    OCR Scan     		PDF MG400H1FK1 TjSl85' MG400H1FK1 LF400A

    POUT315

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-16SL-081 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • ■ LOW INTERMODULATION DISTORTION HIGH GAIN IM3=-45dBc a t Po=31.5dBm GldB=8.0dB at 5.9GHz to 6.4GHz Single C arrier Level BROAD BAND INTERNALLY MATCHED


    OCR Scan     		PDF -45dBc TIM5964-16SL-081 2-16G1B) POUT315

    TIM0910-20

    Abstract: No abstract text available
    Text: TIM0910-20 FE A TU R E S : • HIGH POWER ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE P 1dB = 43.0 dBm at 9.5 GHz to 10.5GHz ■ HIGH GAIN GldB B 7 0 dB at 9 5 GHz * 10 5 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C CHARACTERISTIC


    OCR Scan     		PDF TIM0910-20 2-11C1B) TIM0910-20

    MG75M2CK1

    Abstract: tkp7
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG75M2CK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain


    OCR Scan     		PDF MG75M2CK1 MG75M2CK1 tkp7

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-4 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 6.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM7179-4 MW50970196 TIM7179-4

    TGF1350

    Abstract: No abstract text available
    Text: Texas Instruments TGF1350 Low-Noise Microwave GaAs FET Features • 1.5-dB noise figure with 11 -dB associated gain at 10 GHz ■ 2.2-dB noise figure with 7-dB associated gain at 18 GHz ■ All-gold metallization ■ Recessed 1/2-^m gate structure ■ Si3N4 channel passivation


    OCR Scan     		PDF TGF1350 TGF1350

    MG150H2CL1

    Abstract: No abstract text available
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150H2CL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FAST—ON—TAB #110 MS w.s±a5 FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diodes. . High DC Current Gain : hpjr=80 Min. (Ic=150A)


    OCR Scan     		PDF MG150H2CL1 MG150H2CL1

    Untitled

    Abstract: No abstract text available
    Text: Texas Instruments Microwave Military Components TGM8014 Carrier Plate Assembly Product Features • 0.6-watt average output power at 1-dB gain compression ■ 6 to 18 GHz bandwidth ■ Automated assembly ■ Selectable gate biasing ■ 100% RF screening Product Description


    OCR Scan     		PDF TGM8014 TGA8014

    S-AU25

    Abstract: SAU25
    Text: i TOSHIBA RF POWER AMPLIFIER MODULE - S-AU25 900MHz UHF POWER AMPLIFIER MODULE EUROPE CELLULAR RADIO FEATURES : Unit in mm . Built-in Driver Stage 2-R2.1±a2 . Output Power (6W) is Directly Gained by VCO(lmW). %


    OCR Scan     		PDF S-AU25 900MHz -----------------------------------S-AU25 15000pF, S-AU25 SAU25

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SC4394 Transistor Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications F e a tu re s • L o w N oise Figure, H igh Gain • N F = 1.1 d B , IS21el2 = 11 dB f= 1GHz A b s o lu te M a x im u m R a tin g s (Ta = 2 5 C )


    OCR Scan     		PDF 2SC4394 IS21el2