GaAs wafer
Abstract: No abstract text available
Text: ED-012IRC GaAs/GaAs IrED Chips 940 nm Features : Typical Applications : • GaAs/GaAs wafer • Good spectral matched to si detector • Peripherals • Photocoupler • Photointerrupter Outline Dimensions : Unit: um 285 270 p-Electrode p-GaAs epi layer
|
Original
|
ED-012IRC
110um
270um
280um
285um
285um
GaAs wafer
|
PDF
|
420um
Abstract: No abstract text available
Text: ED-018IRC GaAs/GaAs IrED Chips 940 nm Features : Typical Applications : • GaAs/GaAs wafer • Good spectral matched to si detector • Peripheral Device • Photocoupler • Photointerrupter Outline Dimensions : Unit: um 435 420 p-Electrode p-GaAs epi layer
|
Original
|
ED-018IRC
140um
420um
280um
435umx
435um
420um
|
PDF
|
ED-014IRC
Abstract: GaAs wafer
Text: ED-014IRC GaAs/GaAs IrED Chips 940 nm Features : Typical Applications : • GaAs/GaAs wafer • Good spectral matched to si detector • Peripherals • Photocoupler • Photointerrupter Outline Dimensions : Unit: um 335 320 p-Electrode p-GaAs epi layer
|
Original
|
ED-014IRC
105um
320um
280um
335um
x335um
ED-014IRC
GaAs wafer
|
PDF
|
ED-010IRC
Abstract: No abstract text available
Text: ED-010IRC GaAs/GaAs IrED Chips 940 nm Features : Typical Applications : • GaAs/GaAs wafer • Good spectral matched to si detector • Peripheral Device • Photocoupler • Photointerrupter Outline Dimensions : Unit: um 220 235 p-Electrode p-GaAs epi layer
|
Original
|
ED-010IRC
105um
220um
235um
100mA
ED-010IRC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ED-011IRC GaAs/GaAs IrED Chips 940 nm Features : Typical Applications : • GaAs/GaAs wafer • Good spectral matched to si detector • Peripheral Device • Photocoupler • Photointerrupter Outline Dimensions : Unit: um 245 260 260 p-Electrode p-GaAs epi layer
|
Original
|
ED-011IRC
105um
245um
280um
260um
260um
02OPTOELECTRONIC
|
PDF
|
CFA0301-A
Abstract: CF003-01 CFB0301-B CFB0301
Text: GaAs MESFET Transistor CF003-01 July 2008 - Rev 15-Jul-08 Features High Gain: 8 dB at 12 GHz P1dB Power: 22 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-01 GaAs-based transistor is a 600 um gate width, sub-half-micron gate length GaAs device with Silicon
|
Original
|
CF003-01
15-Jul-08
CF003-01
CF003-01-000X
CFA0301-A
CFB0301-B
CFB0301
|
PDF
|
CF001-01
Abstract: CFB0101 CFB0101B CFA0101A CF001 GaAs MESFET
Text: GaAs MESFET Transistor CF001-01 March 2008 - Rev 15-Mar-08 Features High Gain: Usable to 44 GHz P1dB Power: 21 dBm Wfer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF001-01 GaAs-based transistor is a 300 um gate width, sub-half-micron gate length GaAs device with Silicon
|
Original
|
CF001-01
15-Mar-08
CF001-01
CF001-01-000X
CFB0101
CFB0101B
CFA0101A
CF001
GaAs MESFET
|
PDF
|
Mil-Std-883 Wire Bond Pull Method 2011
Abstract: MIL-STD-883 Method 2010 pHEMT transistor RF MESFET S parameters MESFET 0.15 phemt p-hemt TGA8310 MIL-STD-883 method 2011 GaAs 0.15 pHEMT
Text: GaAs MMIC Space Qualification GaAs MMIC Testing TriQuint Semiconductor has advanced Lot Acceptance Testing LAT for High Reliability Applications of GaAs MMICs. A flowchart depicting the entire MMIC processing flow, including the Quality Conformance Inspection
|
Original
|
|
PDF
|
TGS 2201
Abstract: x-band limiter "Variable Capacitance Diode" X-band pin diode limiter VPIN Vertical P-I-N GaAs Diode limiters TGA2304-SCC x-band limiter diode ADS 10 diode RF limiter PIN diode
Text: VPIN Vertical P-I-N GaAs Diode Process Data Sheet Features Ti/Pt/Au, 0.6 µm • • • • • • • • • • p-GaAs, 0.25 µm Contacts i-GaAs, 1.2 µm n-GaAs, 0.75 µm Multiple P-I-N diode sizes Low on-state resistance Low off-state capacitance Device passivation
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ED-012IRA AlGaAs/GaAs IrED Chips 940 nm ! Typical Applications : ! Features : • AlGaAs/GaAs wafer • remote controller • good spectral matched to Si detector • peripheral device • photocoupler • photointerrupter ! Outline Dimensions : Unit: mil
|
Original
|
ED-012IRA
|
PDF
|
uv phototransistor
Abstract: 8602 rectifier photodiode ge uv photodiode, GaP TSAL6200 ga09 80086 "photoconductive" 1015
Text: VISHAY Vishay Semiconductors Physics and Technology Emitters www.vishay.com 1 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. Structure of the chip is displayed in figure 1. Al p - GaAs : Si n - GaAs : Si 94 8200
|
Original
|
14-Apr-04
uv phototransistor
8602 rectifier
photodiode ge
uv photodiode, GaP
TSAL6200
ga09
80086
"photoconductive" 1015
|
PDF
|
a3bz
Abstract: No abstract text available
Text: SXA389BZ SXA389BZ 400MHz to 2500MHz ¼W Medium Power GaAs HBT Amplifier With Active Bias 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description Features RFMD’s SXA389BZ amplifier is a high efficiency GaAs Heterojunction
|
Original
|
SXA389BZ
400MHz
2500MHz
OT-89
SXA389BZ
OT-89
ECB-101499
a3bz
|
PDF
|
a3bz
Abstract: SXA-389BZ Sirenza amplifier SOT-89 Marking 1485C trace code marking RFMD lot code RFMD SXA389BZSQ
Text: SXA389BZ SXA389BZ 400MHz to 2500MHz ¼W Medium Power GaAs HBT Amplifier With Active Bias 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description Features RFMD’s SXA389BZ amplifier is a high efficiency GaAs Heterojunction
|
Original
|
SXA389BZ
400MHz
2500MHz
SXA389BZ
OT-89
DS110610
a3bz
SXA-389BZ
Sirenza amplifier SOT-89 Marking
1485C
trace code marking RFMD
lot code RFMD
SXA389BZSQ
|
PDF
|
SHF-0189Z
Abstract: SHF0189Z
Text: SHF0189Z SHF0189Z 0.05Ghz to 6GHz, 0.5Watt GaAs HFET 0.05GHz to 6GHz, 0.5WATT GaAs HFET Package: SOT-89 Product Description Features RFMD’s SHF0189Z is a high performance AIGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET
|
Original
|
SHF0189Z
05Ghz
SHF0189Z
OT-89
27dBm
100mA.
40dBm
SHF-0189Z
|
PDF
|
|
|
ED-011IRA
Abstract: No abstract text available
Text: ED-011IRA AlGaAs/GaAs IrED Chips 940 nm Features : Typical Applications : • AlGaAs/GaAs wafer • Good spectral matched to Si detector • Remote Controller • Peripheral Device • Photocoupler • Photointerrupter Outline Dimensions : Unit: um 260 260
|
Original
|
ED-011IRA
105um
245um
280um
260um
260um
Electro-Opt00
ED-011IRA
|
PDF
|
SHF-0289Z
Abstract: SHF0289Z GaAS fet sot89 SHF0289ZSQ
Text: SHF0289Z SHF0289Z 0.05GHz to 6GHz, 1.0Watt GaAs HFET 0.05GHz to 6GHz, 1.0WATT GaAs HFET Package: SOT-89 Product Description Features RFMD’s SHF0289Z is a high performance AIGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET technology improves
|
Original
|
SHF0289Z
05GHz
SHF0289Z
OT-89
30dBm
200mA.
43dBm
SHF-0289Z
GaAS fet sot89
SHF0289ZSQ
|
PDF
|
BPW-20R
Abstract: BPW20 large area quadrant photodiode BPV10NF BPV22NF BPW20R BPW34 BPW46 BPW97 S153P
Text: Vishay Telefunken Physics and Technology Emitters Materials vt vt 12.99 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si 94 8200
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ED-016IRA AlGaAs/GaAs IrED Chips 940 nm Features : Typical Applications : • AlGaAs/GaAs wafer • Good spectral matched to si detector • High power • Low forward voltage • Remote Controller • Pperipheral Device • Photocoupler • Photointerrupter
|
Original
|
ED-016IRA
130um
370um
280um
385um
385um
|
PDF
|
uv phototransistor
Abstract: solar cell transistor infrared monocrystalline solar cell telefunken Dielectric Constant Silicon Nitride power density for monocrystalline solar cell External Quantum Efficiency solar 10MW BPW21R short distance measurement ir infrared diode Telefunken Phototransistor
Text: Vishay Telefunken Physics and Technology Emitters Materials vt vt 05.00 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 1. p - GaAs : Si Al n - GaAs : Si 94 8200
|
Original
|
|
PDF
|
GaAs wafer
Abstract: No abstract text available
Text: ED-018IRA AlGaAs/GaAs IrED Chips 940 nm ! Typical Applications : ! Features : • AlGaAs/GaAs wafer • remote controller • good spectral matched to Si detector • peripheral device • high power • photocoupler • low forward voltage • photointerrupter
|
Original
|
ED-018IRA
mils00
GaAs wafer
|
PDF
|
TSAL6200
Abstract: pn junction diode structure phototransistor K-T TSAL6200 application circuit
Text: Vishay Semiconductors Physics and Technology Emitters Materials Document Number 80086 02-02 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si
|
Original
|
|
PDF
|
ED-010IRA
Abstract: No abstract text available
Text: ED-010IRA AlGaAs/GaAs IrED Chips 940 nm Features : Typical Applications : • AlGaAs/GaAs wafer • Good spectral matched to Si detector • High power • Remote Controller • Peripheral Device • Photocoupler • Photointerrupter Outline Dimensions : Unit: um
|
Original
|
ED-010IRA
105um
220um
280um
ED-010IRA
|
PDF
|
IR 638
Abstract: No abstract text available
Text: ED-010HRP AlGaAs/GaAs LED Chips Red Features : Typical Applications : • AlGaAs/GaAs epi wafer • Double heterojunction structure • Lamp • Display Outline Dimensions : Unit:um 235 220 n-Electrode 120 235 n-Electrode n-AlGaAs epi layer AlGaAs active layer
|
Original
|
ED-010HRP
IR 638
|
PDF
|
GaAs SPDT IC FET
Abstract: SW-239TR MESFET Application
Text: Key Application Features of MMIC GaAs and Pin Diode* Switches Applications Features of PIN Diode and GaAs FET Switches In SOIC type plastic packages the GaAs FET switches can handle up M /A -COM manufactures both PIN diodes and GaAs FET sem icon able that operate to 3 GH z as analog attenuators, digital attenuators
|
OCR Scan
|
ATC100A
AT-210/AT-220
GaAs SPDT IC FET
SW-239TR
MESFET Application
|
PDF
|
