Curtice
Abstract: fet curtice nonlinear model fet curtice LAMBDA alpha 400 NE33200 FET model NE71300 Alpha 1000 GaAsFET pspice
Text: California Eastern Laboratories AN1023 APPLICATION NOTE Converting GaAs FET Models For Different Nonlinear Simulators INTRODUCTION GaAs FET MODELS This paper addresses the issues involved in converting GaAs models for different nonlinear simulators. Three nonlinear GaAs FET models are the Curtice[2], the
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AN1023
sam13-106.
Curtice
fet curtice nonlinear model
fet curtice
LAMBDA alpha 400
NE33200
FET model
NE71300
Alpha 1000 GaAsFET
pspice
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NEC JAPAN
Abstract: NE960R2 NE960R200 NE960R275
Text: DATA SHEET N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power CW with high linear
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NE960R2
NE960R200
NE960R275
NEC JAPAN
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NE960R5
Abstract: NE960R500 NE960R575
Text: DATA SHEET N-CHANNEL GaAs MES FET NE960R5 SERIES 0.5 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.5 watt of output power CW with high linear
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NE960R5
NE960R500
NE960R575
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NES1823M-240
Abstract: j3780
Text: DATA SHEET GaAs FET NES1823M-240 240 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-240 is a 240 W push-pull type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It operates at 12 V and is capable of delivering 240 W of output power CW with high
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NES1823M-240
NES1823M-240
IMT2000
j3780
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NES1823M-180-A
Abstract: No abstract text available
Text: DATA SHEET GaAs FET NES1823M-180 180 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-180 is a 180 W push-pull type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It operates at 12 V and is capable of delivering 180 W of output power CW with high
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NES1823M-180
NES1823M-180
IMT2000
NES1823M-180-A
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8712 RESISTOR
Abstract: NES1823M-180
Text: DATA SHEET GaAs FET NES1823M-180 180 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-180 is a 180 W push-pull type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It is capable of delivering 180 W of output power CW with high linear gain, high
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NES1823M-180
NES1823M-180
IMT2000
8712 RESISTOR
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NES1823S-90
Abstract: No abstract text available
Text: DATA SHEET GaAs FET NES1823S-90 90 W L, S-BAND SINGLE-END POWER GaAs FET DESCRIPTION The NES1823S-90 is a 90 W single-end type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It is capable of delivering 90 W of output power CW with high linear gain, high efficiency
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NES1823S-90
NES1823S-90
IMT2000
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J3780
Abstract: IMT-2000 NES1823M-240 J4083
Text: DATA SHEET GaAs FET NES1823M-240 240 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-240 is a 240 W push-pull type GaAs FET designed for high power transmitter applications for IMT-2000 base station systems. It is capable of delivering 240 W of output power CW with high linear gain, high
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NES1823M-240
NES1823M-240
IMT-2000
J3780
J4083
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NE650103M
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE650103M 10 W L, S-BAND POWER GaAs MES FET DESCRIPTION The NE650103M is a 10 W GaAs MES FET designed for power transmitter applications for mobile communication base station systems. It is capable of delivering 10 W of output power CW with high linear gain, high efficiency and
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NE650103M
NE650103M
T-91M)
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IMT-2000
Abstract: NES1823S-45
Text: DATA SHEET GaAs FET NES1823S-45 45 W L, S-BAND SINGLE-END POWER GaAs FET DESCRIPTION The NES1823S-45 is a 45 W single-end type GaAs FET designed for high power transmitter applications for WCDMA IMT-2000 base station systems. It operates at 12 V and is capable of delivering 45 W of output power (CW)
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NES1823S-45
NES1823S-45
IMT-2000)
IMT-2000
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NE650103M
Abstract: NE650103M-A
Text: DATA SHEET N-CHANNEL GaAs MES FET NE650103M 10 W L, S-BAND POWER GaAs MES FET DESCRIPTION The NE650103M is a 10 W GaAs MES FET designed for power transmitter applications for mobile communication base station systems. It is capable of delivering 10 W of output power CW with high linear gain, high efficiency and
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NE650103M
NE650103M
NE650103M-A
T-91M)
NE650103M-A
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SMD M05 sot
Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
Text: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial
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08/2M
SMD M05 sot
NESG303100G
SMD transistor M05
transistor NEC D 882 p
m33 tf 130
H02 SOT-363
SMD M05 sot23
UPC8236
T6N 700
NE68000 s-parameters
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Phycomp
Abstract: MGA-545P8 TL11 TL22 F293
Text: Medium Power Amplifier for 5.8 GHz Applications using the Agilent MGA-545P8 GaAs MMIC Application Note 1339 Introduction Agilent Technologies’s MGA-545P8 is an economical low current medium power GaAs MMIC that offers excellent power output at 5.8 GHz. At a quiescent
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MGA-545P8
MGA-545P8.
MGA-545P8
5988-8652EN
Phycomp
TL11
TL22
F293
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AM020MH2-BI-R
Abstract: No abstract text available
Text: AM020MH2-BI-R Aug 2010 Rev 4 HiFET High Voltage GaAs FET DESCRIPTION 0.025 AMCOM’s AM020MH2-BI-R is a part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power and broadband applications.
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AM020MH2-BI-R
AM020MH2-BI-R
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Untitled
Abstract: No abstract text available
Text: AM030MH4-BI-R HiFET High Voltage GaAs FET August 2007 Rev. 1 DESCRIPTION AMCOM’s AM030MH4-BI-R is part of the BH series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power, high linearity, and broadband applications. This
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AM030MH4-BI-R
AM030MH4-BI-R
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Untitled
Abstract: No abstract text available
Text: AM010MH4-BI-R HiFET High Voltage GaAs FET August 2007 Rev. 1 DESCRIPTION AMCOM’s AM010MH4-BI-R is part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power, high linearity, and broadband applications. This
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AM010MH4-BI-R
AM010MH4-BI-R
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PT 4115
Abstract: maximum gain s2p AM020
Text: AM020MH2-BI HiFET High Voltage GaAs FET February 2004 v.1 DESCRIPTION AMCOM’s AM020MH2-BI is a part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power and broadband applications. This part has a
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AM020MH2-BI
AM020MH2-BI
AM02MH2-BI
270mA)
PT 4115
maximum gain s2p
AM020
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AM010MH2-BI
Abstract: pt 4115 25302
Text: AM010MH2-BI HiFET High Voltage GaAs FET February 2004 v.1 DESCRIPTION AMCOM’s AM010MH2-BI is a part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power and broadband applications. This part has a
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AM010MH2-BI
AM010MH2-BI
pt 4115
25302
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Untitled
Abstract: No abstract text available
Text: AM030WH4-BI-R December 2008 Rev. 0 HiFET High Voltage GaAs FET DESCRIPTION AMCOM’s AM030WH4-BI-R is part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power, high linearity, and broadband applications. This
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AM030WH4-BI-R
AM030WH4-BI-R
300mA)
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AM030MH4-BI-R
Abstract: AM030MH4-BI
Text: AM030MH4-BI-R Aug 2010 Rev 3 HiFET High Voltage GaAs FET DESCRIPTION 0.025 AMCOM’s AM030MH4-BI-R is part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power, high linearity, and broadband applications.
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AM030MH4-BI-R
AM030MH4-BI-R
AM030MH4-BI
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AM010MH4-BI-R
Abstract: No abstract text available
Text: AM010MH4-BI-R Aug 2010 Rev 2 HiFET High Voltage GaAs FET DESCRIPTION 0.025 AMCOM’s AM010MH4-BI-R is part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power, high linearity, and broadband applications.
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AM010MH4-BI-R
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High voltage GaAs FET
Abstract: 37758 DC bias of gaas FET
Text: AM010MH4-BI HiFET High Voltage GaAs FET January 2003 Preliminary DESCRIPTION AMCOM’s AM010MH4-BI is part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power and broadband applications. This part has a total
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AM010MH4-BI
AM010MH4-BI
High voltage GaAs FET
37758
DC bias of gaas FET
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AM030MH4-BI
Abstract: No abstract text available
Text: HiFET High Voltage GaAs FET AM030MH4-BI January 2003 Preliminary DESCRIPTION AMCOM’s AM030MH4-BI is part of the BH series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power and broadband applications. This part has a total
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AM030MH4-BI
AM030MH4-BI
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mga 017
Abstract: MGA-634P8-BLKG
Text: MGA-634P8 Ultra Low Noise, High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-634P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of Avago Technologies’ proprietary 0.25um GaAs
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MGA-634P8
MGA-634P8
75mm3
450MHz
AV02-2544EN
mga 017
MGA-634P8-BLKG
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