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    GAAS POWER AMPLIFIER 10W Search Results

    GAAS POWER AMPLIFIER 10W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    GAAS POWER AMPLIFIER 10W Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RF Power Amplifier 125KHz

    Abstract: RFHA5966AX 4500m 1n4148 die GAAS FET AMPLIFIER x-band 10w RFHA5966A x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm
    Text: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF


    Original     		RFHA5966AX RFHA5966A 4500m 4000m 41dBm RFHA5966A 1N4148, RF Power Amplifier 125KHz 1n4148 die GAAS FET AMPLIFIER x-band 10w x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm PDF

    MMIC X-band amplifier

    Abstract: No abstract text available
    Text: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF


    Original     		RFHA5966A RFHA5966AX 41dBm RFHA5966A Radar023 1N4148, DS111023 MMIC X-band amplifier PDF

    Untitled

    Abstract: No abstract text available
    Text: RFPA1012 RFPA1012 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package Style: DFN, 8-Pin, 2mm x 2mm Features High Linearity: OIP3 = 44dBm at 900MHz  Low Noise: NF = 3.5dB at 900MHz  Low DC Power: 5V, 90mA 


    Original     		RFPA1012 400MHz 2700MHz 44dBm 900MHz PDF

    CHA7010

    Abstract: x-Band High Power Amplifier
    Text: CHA7010 RoHS COMPLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP


    Original     		CHA7010 CHA7010 DSCHA70104054 x-Band High Power Amplifier PDF

    x-Band High Power Amplifier

    Abstract: 10Ghz RF Power 10w amplifier CHA7010
    Text: CHA7010 RoHS COMPLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP


    Original     		CHA7010 CHA7010 DSCHA70104054 x-Band High Power Amplifier 10Ghz RF Power 10w amplifier PDF

    CHA7010

    Abstract: x-Band High Power Amplifier x band Gaas Power Amplifier 10W
    Text: CHA7010 X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through


    Original     		CHA7010 CHA7010 DSCHA70102175 -24-June-02 x-Band High Power Amplifier x band Gaas Power Amplifier 10W PDF

    x-Band High Power Amplifier

    Abstract: 6 ghz amplifier 10w United Monolithic Semiconductors x-band power transistor 4GHz RF power transistors with s-parameters CHA7010
    Text: CHA7010 X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through


    Original     		CHA7010 CHA7010 DSCHA70103135 x-Band High Power Amplifier 6 ghz amplifier 10w United Monolithic Semiconductors x-band power transistor 4GHz RF power transistors with s-parameters PDF

    WiFi transceiver

    Abstract: 860mhz rf amplifier circuit diagram LQP15MN6N2B02D ERJ2RKF1000X 500R07S2R4
    Text: RFPA1012 RFPA1012 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz to 2700MHz Power Amplifier Package Style: DFN, 8-Pin, 2mm x 2mm Features 1 8 VBIAS Low Noise: NF = 3.5dB at 900MHz RFIN 2 7 RFOUT/VCC  Low DC Power: 5V, 90mA NC 3 400MHz to 2700MHz Operation


    Original     		RFPA1012 400MHz 2700MHz RFPA1012 44dBm 900MHz WiFi transceiver 860mhz rf amplifier circuit diagram LQP15MN6N2B02D ERJ2RKF1000X 500R07S2R4 PDF

    wifi transceiver

    Abstract: 860mhz rf amplifier circuit diagram 500R07S0R5 LQP15MN6N2B02D
    Text: RFPA1012 RFPA1012 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package Style: DFN, 8-Pin, 2mm x 2mm Features 1 8 VBIAS Low Noise: NF = 3.5dB at 900MHz RFIN 2 7 RFOUT/VCC  Low DC Power: 5V, 90mA NC 3 400MHz to 2700MHz Operation


    Original     		RFPA1012 400MHz 2700MHz RFPA1012 44dBm 900MHz wifi transceiver 860mhz rf amplifier circuit diagram 500R07S0R5 LQP15MN6N2B02D PDF

    860mhz rf amplifier circuit diagram

    Abstract: wifi transceiver ERJ2RKF1000X lot date code panasonic ERJ lot date code panasonic Merix LQP15MN6N2B02D ERJ2GEJ202 GRM155R71H102KA01E RFPA1012
    Text: RFPA1012 RFPA1012 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package Style: DFN, 8-Pin, 2mm x 2mm Features 1 8 VBIAS Low Noise: NF = 3.5dB at 900MHz RFIN 2 7 RFOUT/VCC  Low DC Power: 5V, 90mA NC 3 400MHz to 2700MHz Operation


    Original     		RFPA1012 400MHz 2700MHz RFPA1012 44dBm 900MHz 860mhz rf amplifier circuit diagram wifi transceiver ERJ2RKF1000X lot date code panasonic ERJ lot date code panasonic Merix LQP15MN6N2B02D ERJ2GEJ202 GRM155R71H102KA01E PDF

    Untitled

    Abstract: No abstract text available
    Text: 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD May 2008 - Rev 28-May-08 Features Chip Device Functional Diagram 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power


    Original     		28-May-08 P1057-BD MIL-STD-883 surfaD-000V XP1057-BD-EV1 XP1057-BD PDF

    tanaka gold wire

    Abstract: tanaka wire XP1057-BD DM6030HK tanaka TS3332LD tanaka TS3332LD epoxy
    Text: 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 10W Power Amplifier Dual Sided Bias Architecture 18 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power


    Original     		12-May-08 P1057-BD MIL-STD-883 surfaD-000V XP1057-BD-EV1 XP1057-BD tanaka gold wire tanaka wire DM6030HK tanaka TS3332LD tanaka TS3332LD epoxy PDF

    tanaka gold wire

    Abstract: tanaka au wire DM6030HK tanaka TS3332LD
    Text: 14.5-17.0 GHz GaAs MMIC Power Amplifier P1070-BD October 2008 - Rev 16-Oct-08 Features Chip Device Functional Diagram 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power


    Original     		16-Oct-08 P1070-BD MIL-STD-883 chipD-000V XP1070-BD-EV1 XP1070-BD tanaka gold wire tanaka au wire DM6030HK tanaka TS3332LD PDF

    tanaka TS3332LD

    Abstract: TS3332LD
    Text: 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD October 2008 - Rev 16-Oct-08 Features Chip Device Functional Diagram 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power


    Original     		16-Oct-08 P1057-BD MIL-STD-883 sD-000V XP1057-BD-EV1 XP1057-BD tanaka TS3332LD TS3332LD PDF

    mmic AMPLIFIER x-band 10w

    Abstract: P1006-FA power transistor mimix x-band XP1006-FA-0N00 x-band power amplifier I0004966
    Text: 8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin September 2008 - Rev 10-Sep-08 P1006-FA Features X-Band 10W Power Amplifier Flange Package 21.5 dB Large Signal Gain +40.5 dBm Saturated Output Power 37% Power Added Efficiency 100% On-Wafer RF, DC and Output Power Testing


    Original     		10-Sep-08 P1006-FA XP1006-FA-0N00 XP1006-FA-EV1 XP1006-FA mmic AMPLIFIER x-band 10w power transistor mimix x-band x-band power amplifier I0004966 PDF

    P1006BD

    Abstract: P1006-BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2008 - Rev 11-Nov-08 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		11-Nov-08 P1006-BD MIL-STD-883 XP1006 XP1006-BD-000V XP1006-BD-EV1 P1006BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia PDF

    tanaka gold wire

    Abstract: MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006 bonding X-band GaAs pHEMT MMIC Chip
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier March 2006 - Rev 13-Mar-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		13-Mar-06 P1006 MIL-STD-883 XP1006 tanaka gold wire MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006 bonding X-band GaAs pHEMT MMIC Chip PDF

    p1006-fa

    Abstract: XP1006-FA MMIC X-band amplifier P1006 XP1006-FA-0N00 mmic AMPLIFIER x-band 10w XP1006-FA-EV1
    Text: 8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin August 2006 - Rev 16-Aug-06 P1006-FA Features X-Band 10W Power Amplifier Flange Package 21.5 dB Large Signal Gain +40.5 dBm Saturated Output Power 37% Power Added Efficiency 100% On-Wafer RF, DC and Output Power Testing


    Original     		16-Aug-06 P1006-FA XP1006-FA-0N00 XP1006-FA-EV1 XP1006-FA p1006-fa MMIC X-band amplifier P1006 XP1006-FA-0N00 mmic AMPLIFIER x-band 10w XP1006-FA-EV1 PDF

    GAAS FET AMPLIFIER x-band 10w

    Abstract: XP1006-BD XP1006-BD-EV1 P1006BD MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006-BD-000V
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier August 2007 - Rev 03-Aug-07 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		03-Aug-07 P1006-BD MIL-STD-883 XP1006 XP1006-BD-000V XP1006-BD-EV1 XP1006 GAAS FET AMPLIFIER x-band 10w XP1006-BD XP1006-BD-EV1 P1006BD MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006-BD-000V PDF

    Untitled

    Abstract: No abstract text available
    Text: 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD April 2009 - Rev 18-Apr-09 Features 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power +48.0 dBm Output Third Order Intercept


    Original     		P1057-BD 18-Apr-09 MIL-STD-883 XP1057-BD-EV1 XP1057-BD PDF

    Untitled

    Abstract: No abstract text available
    Text: 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD January 2009 - Rev 29-Jan-09 Features 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power +48.0 dBm Output Third Order Intercept


    Original     		29-Jan-09 P1057-BD MIL-STD-883 anD-000V XP1057-BD-EV1 XP1057-BD PDF

    P1006

    Abstract: GAAS FET AMPLIFIER x-band 10w XP1006 bonding XP1006 XP1006-BD
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 - Rev 01-Nov-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		01-Nov-06 P1006 MIL-STD-883 XP1006 XP1006-BD-000V XP1006-BD-000W XP1006-BD-EV1 GAAS FET AMPLIFIER x-band 10w XP1006 bonding XP1006-BD PDF

    Untitled

    Abstract: No abstract text available
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 - Rev 01-Nov-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		01-Nov-06 P1006 MIL-STD-883 XP1006 XP1006-BD-000V XP1006-BD-000W XP1006-BD-EV1 XP1006 PDF

    power transistor gaas x-band

    Abstract: x-band transistor
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier September 2005 - Rev 30-Sep-05 P1006 Features Chip Device Layout X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		30-Sep-05 P1006 MIL-STD-883 XP1006 power transistor gaas x-band x-band transistor PDF