GAAS PHOTODIODE OPERATING TEMPERATURE RANGE Search Results

Contextual Info: 1.5GHz GaAs PIN Photodiode Module • • • • • • GaAs PIN Photodiode Module Features High Responsivity High speed, typical 1.5 GHz Low dark current, < 1nA Low capacitance, typical 0.7pF Operating temperature range -40°C to 85°C Hermetically sealed TO-18 package in pigtailed or

Contextual Info: GaAs PIN Photodiode Module GaAs PIN Photodiode Module Features • High Responsivity • High speed, typical 3.5 GHz • Low dark current, < 1nA • Low capacitance, typical 0.7pF • Operating temperature range -40°C to 85°C • Hermetically sealed TO-18 package in pigtailed or

TA-TSY-000983

Abstract: photodiode DSC PPA1515-155-A-DN PPA1515-155-A-FP PPA1515-155-A-SC PPA1515-155-A-ST PPA1515-155-D-FP PPA1515-XXX-X-XX
Contextual Info: WhoI HEWLETT m Llim PACKARD Pigtailed PIN-PREAMP Technical Data PPA1515-155/622 Features Description • Integrated InGaAs PIN and GaAs Preamplifier The PPA1515 is a compact fiber pigtailed InGaAs photodiode with preamplifier designed for wide operating temperature range, low

GaAs 1000 nm Infrared Diode,

Abstract: SD1410 SD1420 SD1440 SE1450
Contextual Info: SE1450 GaAs Infrared Emitting Diode FEATURES • Compact, metal can coaxial package • 24¡ nominal beam angle • 935 nm wavelength • Wide operating temperature range (- 55¡C to +125¡C) • Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and

GaAs 1000 nm Infrared Diode,

Abstract: SE1450-002L
Contextual Info: SE1450 GaAs Infrared Emitting Diode FEATURES • Compact, metal can coaxial package • 24° nominal beam angle • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C) • Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and

dd127

Abstract: TA-TSY-000983
Contextual Info: Whpl H E W L E T T mLfimPA C K A R D Connectorized PIN-PREAMP Technical Data PPA0515-052/155/622 Features Description • Integrated InGaAs PIN and GaAs Preamplifier The PPA0515 is a compact connectorized InGaAs photodiode with preamplifier designed for wide operating temperature range,

GaAs 1000 nm Infrared Diode,

Abstract: SE1450-002L se1450-003l
Contextual Info: SE1450 GaAs Infrared Emitting Diode FEA TU R ES • Compact, metal can coaxial package • 24° nominal beam angle • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C) • Mechanically and spectrally matched to SD 1420 photodiode, SD 1440 phototransistor and SD1410

photodiode ge

Abstract: TSAL6200 TSFF5410 TSHA550 TSHF5410 TSUS540 detect radiation
Contextual Info: Physics and Technology Vishay Semiconductors Physics and Technology EMITTERS Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemental semiconductor silicon, compound III-V semiconductors consist of two or more different elements of group three (e.g.,

FU-319SPP-C6

Abstract: nrz optical oc48 photodiode preamplifier AGC STM-16 coaxial pin photodiode module stm-16 coaxial 5pin pin Photodiode preamp mitsubishi fu 1.31 ber
Contextual Info: MITSUBISHI OPTICAL DEVICES FU-319SPP-C6 InGaAs PD PREAMP MODULE FOR THE 1.31 µm AND 1.55 µm WAVELENGTH RANGE DESCRIPTION FU-319SPP-C6 is InGaAs pin photodiode module with GaAs preamplifier, designed for use in highspeed, long haul optical communication systems.

Physics and Technology

Abstract: physics pn junction diode structure
Contextual Info: Physics and Technology www.vishay.com Vishay Semiconductors Physics and Technology EMITTERS Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemental semiconductor silicon, compound III-V semiconductors

FU-319SPA-CV6

Abstract: 319SPACV6 mitsubishi APD InGaAs apd photodiode InGaAs APD Pre-Amplifier STM-16 APD, applications, bias supply photodiode Avalanche photodiode APD FOR POWER mitsubishi avalanche photodiode ingaas ghz
Contextual Info: MITSUBISHI OPTICAL DEVICES FU-319SPA-CV6 InGaAs APD PREAMP MODULE FOR THE 1.31 µm AND 1.55 µm WAVELENGTH RANGE DESCRIPTION FU-319SPA-CV6 is InGaAs avalanche photodiode module with GaAs preamplifier, designed for use in high-speed, long haul optical communication systems.

preamplifier AGC IR

Abstract: FU-319SPP-CV6 STM-16 photodiode preamplifier AGC coaxial pin photodiode module 50 um photodiode pin Photodiode preamp
Contextual Info: TZ7-99-460B 2/4 MITSUBISHI (OPTICAL DEVICES) FU-319SPP-CV6 InGaAs PD PREAMP MODULE FOR THE 1.31 µm AND 1.55 µm WAVELENGTH RANGE DESCRIPTION FU-319SPP-CV6 is InGaAs pin photodiode module with GaAs preamplifier, designed for use in highspeed, long haul optical communication systems.

InGaAs apd photodiode

Abstract: photodiode preamplifier AGC 55nm photodiode Avalanche photodiode FU-319SPA-C6 FU-319SPP-C6 STM-16 mitsubishi fu 1.31 ber
Contextual Info: MITSUBISHI OPTICAL DEVICES FU-319SPA-C6 InGaAs APD PREAMP MODULE FOR THE 1.31 iim AND 1.55 |im WAVELENGTH RANGE DESCRIPTION FU-319SPP-C6 is InGaAs avalanche photodiode module with GaAs preamplifier, designed for use in high-speed, long haul optical communication

photodiode Avalanche photodiode

Abstract: InGaAs apd photodiode GaAs apd photodiode InGaAs apd photodiode application note FU-319SPA-CV6 459b STM-16 TZ7-99-459B mitsubishi APD APD, applications, bias supply
Contextual Info: TZ7-99-459B 2/4 MITSUBISHI (OPTICAL DEVICES) FU-319SPA-CV6 InGaAs APD PREAMP MODULE FOR THE 1.31 µm AND 1.55 µm WAVELENGTH RANGE DESCRIPTION FU-319SPA-CV6 is InGaAs avalanche photodiode module with GaAs preamplifier, designed for use in high-speed, long haul optical communication systems.

GaAs photodiode 10G

Abstract: NTT Electronics GaAs NLG2132 10G PD photodiode 10Ghz PIN
Contextual Info: NS GD E056D PRELIMINARY MAY 29, 2000 NEL NLG2132 TRANSIMPEDANCE AMPLIFIER BARE DIE This NLG2132 is a GaAs MESFET IC Chip that performs signal amplification over the wide frequency range extending from DC to 7.7 GHz. This IC Chip is applicable to 10 Gb/s optical fiber communication systems.

Contextual Info: w B T & D TECHNOLOGIES MSE D B 1105063 QDOD123 S HBTDT -M i- \ T ss «*-. E sv C MMuAih •iws ' H N O -it w S ' L \Sa \ O I G I 91 S E S , k-l j \\ S PDC1211-52/155 WIDE DYNAMIC RANGE GaAs IC PINFET RECEIVER Features Applications I Ultra high reliability planar InGaAs

S288P

Abstract: PW20R light dependent resistor circuit U6792 Near - Infrared Emitting Diod es BPW 23 nf photoconductive cells characteristic
Contextual Info: Tem ic Semiconductors Physics and Technology Emitters Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemen­ tal semiconductor silicon. the compound III-V semiconductors consists of two different elements of

Bookham

Abstract: PTV2400 PTV2400-98 PTV2400-98G 98c33 CASE TO 4 PTV2400 bookham pin j* 1803 8 pin Bookham Technology tl
Contextual Info: Data sheet 2.5Gb/s Mini-DIL Receiver Features PTV2400 • Wavelength range 1200 - 1600nm The PTV2400 is an optical receiver suitable for 2.5Gb/s short reach SDH/SONET/ATM single-mode applications. It uses Bookham Technology’s one piece fiber alignment technology offering high stability and

TGA4817

Abstract: 16CT-G
Contextual Info: Product Data Sheet August 5, 2008 10Gb/s Wide Dynamic Range Differential TIA TGA4817 Key Features and Performance • • • • • • • • Preliminary Measured Performance Bias Conditions: V+=3.3V I+=70mA 76 Differential Zt dB-Ohm CPIN = 0.2 pF RPIN = 15 Ohm

OC74

Contextual Info: Advance Product Information September 27, 2004 10Gb/s Wide Dynamic Range Differential TIA TGA4817-EPU Key Features and Performance • • • • • • • • Preliminary Measured Performance Bias Conditions: V+=3.3V I+=70mA 76 Differential Zt dB-Ohm

TGA4817-EPU

Contextual Info: Advance Product Information December 18, 2003 10Gb/s Wide Dynamic Range Differential TIA TGA4817-EPU Key Features and Performance • • • • • • • • 3200Ω Single-Ended Transimpedance > 9 GHz 3dB Bandwidth > 1.6mA RMS Input Overload Current 11pA/ √Hz Input Noise Current

Contextual Info: SD2420 Silicon Photodiode FEATURES • Miniature, hermetically sealed, pill style, metal can package • 48° nominal acceptance angle • Wide operating temperature range (-55°C to +125°C) • Ideal for direct mounting to printed circuit boards • Mechanically and spectrally matched to SE2460

Lucent 1319

Abstract: 1319ms apd photodetector pin diagram of ic 7495 1319MR 1319ma transistor d2300 d2525p* lucent 2000 laser module Lucent 700b
Contextual Info: Data Sheet July 2000 1319-Type High-Speed Lightwave Receiver Features • High data rate capability: 2.5 Gbits/s ■ APD or PIN photodetector ■ Fully operational through the 1.3 µm to 1.55 µm wavelength range ■ Typical sensitivity: — –34 dBm with APD

Contextual Info: Photodiode EPD-880-5-0.9 04.05.2007 Prototype rev. 01/07 Wavelength Type Technology Case Infrared Integrated filter AlGaAs/GaAs 5 mm plastic lens Description Selective photodiode mounted in standard 5 mm package without standoff. Narrow bandwidth and high spectral sensitivity in the infrared range