GAAS P-N DIODE Search Results

TGS 2201

Abstract: x-band limiter "Variable Capacitance Diode" X-band pin diode limiter VPIN Vertical P-I-N GaAs Diode limiters TGA2304-SCC x-band limiter diode ADS 10 diode RF limiter PIN diode
Contextual Info: VPIN Vertical P-I-N GaAs Diode Process Data Sheet Features Ti/Pt/Au, 0.6 µm • • • • • • • • • • p-GaAs, 0.25 µm Contacts i-GaAs, 1.2 µm n-GaAs, 0.75 µm Multiple P-I-N diode sizes Low on-state resistance Low off-state capacitance Device passivation

Contextual Info: OKI electronic components OCS32 O p t ic a l P N P N S w it c h e s GENERAL DESCRIPTION The OCS32 is an optical PNPN switch, combining a GaAs infrared light emitting diode and a silicon PNPN photo sensor in a single 8-pin plastic package. The GaAs light em itting diode acts as the input

gunn diodes

Abstract: AH443 GUNN impatt DH385 AH365 DH378 AH152 AH802 GaAs p-i-n diodes
Contextual Info: DIODES SELECTION GUIDE P R O D U C T S REF. D E S C R IP T IO N AH152 to AH 169 GaAs Abrupt tuning Varactors AH202 to AH240 GaAs Hyperabrupt tuning Varactors AH365 to AH380 GaAs Gunn Diodes 18-26GHz AH443 to AH497 GaAs Gunn Diodes (9-18GHZ) AH501 to AH539

SM 850nm laser

Contextual Info: LASER DIODE LC850D6S-N/P LC850D6S-N/P is 850nm AIGaAs/GaAS MQW fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability. LC850D6S-N/P is a CW single mode injection semiconductor

APX378

Abstract: C116
Contextual Info: APX378 GaAs BEAM LEAD SCHOTTKY R E C E I V I N G D I O D E S FEATURES Noise figure : 7.5dB at 94GHz Low capacitance Extremely rugged Passivated planar process construction. A P P L IC A T IO N S The GaAs SCHOTTKY barrier diodes are used as mixer or detector in receivers of frequency

Contextual Info: mu GaAs LIGHT-EMITTING DIODE 62033 TYPE GS 5040 O P TO ELEC TR O N IC PRODUCTS DIVISION * HIGH INTENSITY GaAIAs VERSION AVAILABLE RECESSED TO-46 HEADER FOR PRECISE BEAM ALIGNMENT HIGH EFFICIENCY HERMETIC PACKAGE Mii 62033 is a P-N GaAs Infrared Light Emitting Diode in a lensed TO-46 package, and is spectrally matched to

T572S

Abstract: tv sony 1435 J50 O 26 dual-gate 17458 3SK147
Contextual Info: 77 SO N Y C O R P / C O M P O N E N T PR O D S DE 1ñ3fl23fl3 OOOOEEfl fl | ~ 0 ^ 3 1 ’* 2 5 GaAs N-channel Dual-Gate MES FET D e scrip tio n : The 3SK147 is a GaAs N-channel Dual-Gate MES FET for low noise UHF amplifiers and mixers. Low noise, high gain

Contextual Info: 8382383 SONY C O R P /C O M P O N E N T 77C 0 0 2 5 8 PRODS D 7' - & - ? ~ o 7 1T379 GaAs Schottky Barrier Diode a Description: The 1T379 is a low noise GaAs Schottky barrier diode designed for mixer applications up to the Ku-band. Plastic mold packaging has been adopted to reduce cost.

Siemens RS 1001 L

Abstract: SFH2030
Contextual Info: SIEMENS LD274 LD275 GaAs INFRARED EMITTER * GaAs Infrared Emitting Diode, Fabricated in a Liquid Phase Epitaxy Process * Emits Radiation in Near Infrared Range O p e r a tin g /S to ra g e T e m p e r a tu r e R a n g e T o p , Ts t g * High Efficiency

uv phototransistor

Abstract: 8602 rectifier photodiode ge uv photodiode, GaP TSAL6200 ga09 80086 "photoconductive" 1015
Contextual Info: VISHAY Vishay Semiconductors Physics and Technology Emitters www.vishay.com 1 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. Structure of the chip is displayed in figure 1. Al p - GaAs : Si n - GaAs : Si 94 8200

BPW-20R

Abstract: BPW20 large area quadrant photodiode BPV10NF BPV22NF BPW20R BPW34 BPW46 BPW97 S153P
Contextual Info: Vishay Telefunken Physics and Technology Emitters Materials vt vt 12.99 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si 94 8200

sfh 517

Abstract: diodes 415
Contextual Info: SIEMENS GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 Cathode 7.5 EL •r. E N, * u/ 4.8 Area not f l a t ' Chip p o s itio n ' A p pro x. w e ight 0.2 g Area not fla t 1.2 29 .5 _ 27.5 Chip position Cathode D iode C o llector (T ra n s is to r)

uv phototransistor

Abstract: solar cell transistor infrared monocrystalline solar cell telefunken Dielectric Constant Silicon Nitride power density for monocrystalline solar cell External Quantum Efficiency solar 10MW BPW21R short distance measurement ir infrared diode Telefunken Phototransistor
Contextual Info: Vishay Telefunken Physics and Technology Emitters Materials vt vt 05.00 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 1. p - GaAs : Si Al n - GaAs : Si 94 8200

TSAL6200

Abstract: pn junction diode structure phototransistor K-T TSAL6200 application circuit
Contextual Info: Vishay Semiconductors Physics and Technology Emitters Materials Document Number 80086 02-02 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si

2 Wavelength Laser Diode

Abstract: Opto Diode opto laser laser diode chip DIODE CHIP
Contextual Info: AlGaInP/GaAs Laser Diode Chip ▓ LI650C Scope : This specification applies to AlGaInP/GaAs Laser Diode Chip. ▓ Structure : 1 Edge emitting type 2) Narrow stripe 3) Index guided quantum well 4) P anode) side: gold alloy N (cathode) side: gold alloy ▓

SGM2016M

Abstract: SGM2016P Sony Semiconductor sony tuners HA 1166 NF 935 b 772 p dual-gate E-9217 sony 174A
Contextual Info: SONY SGM2016M/P1 GaAs N-channel Dual-Gate MES FET_ |For the availability of this product, please contact the sales office. Description Package Outline Unit : mm The SGM2016M/P is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter £ - 5 u . 2.1 1 .5 2 .5 4 C a th o d e LD 1 D e ta c h in g fla s h a re a n o t tru e A p p ro x . .n o h o l' ° R a d ia n t s e n s itiv e (0 .4 X 0 .4 ) v - C o lle c to r (B P X LD 261 s p a c in g

Contextual Info: DATA SHEET NEC PHOTO SCR COUPLERS ELECTRON DEVICE PS3001 1 , PS3002 (1) PHOTO S C R COUPLER DESCRIPTION The PS3001 and PS3002 are optically oouptcd isolators containing GaAs infrared em itting diode and a P N P N silicon photo S C R . PACKAGE DIMENSIONS In nùllimran (inch«)

Contextual Info: TOSHIBA TLP3540 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET T L P 3 540 Unit in mm M EM O R Y TESTERS LOGIC 1C TESTERS DATA RECORDING EQUIPMENT 7 6 5 CT1 n_ n l~P MEASURING EQUIPMENT TLP3540 is a photorelay and consists of a GaAs infrared emitting diode optically coupled to a photo-MOSFET in a 8-pin DIP package.

SE308T

Contextual Info: DATA SHEET NEC LIGHT EMITTING DIODE ELECTRON DEVICE SE308-T GaAs INFRARED EMITTING DIODE -N E P O C SERIES— D ESCRIPTIO N The SE308 is a GaAs Gallium Arsenide Infrared Emitting Diode which is mounted on the lud frames and molded in plastic. On forward bias, it emits a spectrally narrow band of radiation peaking at 940 nm.

SE304

Contextual Info: N EC 3ÜE D ELECTRONI CS INC • b427555 002*1046 S ■ " T -H I-i/ LIG HT EMITTING DIODE SE304 GaAs IN F RA R ED E M IT T IN G DIO DE -N E P O C S E R IE S — The SE304 is a GaAs Ga!lium Arsenide Infrared LEO in a plastic PA C K A G E D IM E N S IO N S

Contextual Info: ma GaAs LIGHT-EMITTING DIODE 62033 TYPE GS 5040 OPTO ELE CT RON IC PRODUCTS D I VI SI O N * HIGH INTENSITY GaAIAs VERSION AVAILABLE RECESSED TO-46 HEADER FOR PRECISE BEAM ALIGNMENT HIGH EFFICIENCY HERMETIC PACKAGE Mii 62033 ¡s a P-N GaAs Infrared Light Emitting Diode in a lensed TO-46 package, and is spectrally matched to

EL-7L

Abstract: EL-1CL3H EL7L
Contextual Info: Infrared Emitting Diodes E M IT T E R S A P P L IC A T IO N : R em ote C o n tro l/O p tic al S w itch /O p to is o lato r/ C hop per/P attern Recognition INFRARED EM ITTING DIODES GaAs (Ta=25°C) A bsolute m axim u m Ratings T y p e N o. lF(mA) V r(V )

siemens LD

Contextual Info: SIEMENS LD 242 GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 2 .7 • p * Chip position 0 0 .4 5 Anode LD 2 4 2 , BPX 6 3 , SFH Cathode (S FH 464 483) A p p ro x. w eight 0 .5 g M a ß e in m m , w enn nicht and ers a n g eg eb en /D im en s io n s in m m , unless otherw ise specified.