GAAS MESFET AMPLIFIER WITH HIGH INPUT IMPEDANCE Search Results

Contextual Info: HMC637LP5/637LP5E v03.1213 AMPLIFIERS - SMT GAAS MESFET MMIC 1 WATT Power Amplifier, DC - 6 GHz Typical Applications Features The HMC637LP5 E wideband PA is ideal for: P1dB Output Power: +29 dBm • Telecom Infrastructure Gain: 13 dB • Microwave Radio & VSAT

HMC637LP5E

Abstract: HMC637LP5 GaAs MESFET amplifier with high input impedance
Contextual Info: HMC637LP5 / 637LP5E v02.0709 LINEAR & POWER AMPLIFIERS - SMT 11 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC637LP5 E wideband PA is ideal for: P1dB Output Power: +29 dBm • Telecom Infrastructure Gain: 13 dB • Microwave Radio & VSAT

MESFET Application

Contextual Info: HMC637LP5/637LP5E v03.1213 Amplifiers - SMT GaAs MESFET MMIC 1 WATT Power Amplifier, DC - 6 GHz Typical Applications Features The HMC637LP5 E wideband PA is ideal for: P1dB Output Power: +29 dBm • Telecom Infrastructure Gain: 13 dB • Microwave Radio & VSAT

Contextual Info: HMC637LP5 / 637LP5E v02.0709 Amplifiers - Linear & Power - SMT 9 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC637LP5 E wideband PA is ideal for: P1dB Output Power: +29 dBm • Telecom Infrastructure Gain: 13 dB

MESFET Application

Contextual Info: HMC637LP5 / 637LP5E v02.0709 Amplifiers - lineAr & power - smT 9 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Typical Applications Features The HmC637lp5 e wideband pA is ideal for: p1dB output power: +29 dBm • Telecom infrastructure Gain: 13 dB

ap910401

Abstract: mmic code h5 MWT-PH15 WPS44 MMA-054025-Q3 MWT-10 mps080817nxx 445122 MGA-242740-02 MMA-343737-Q10
Contextual Info: New Products in 2010 New Linear GaN Amplifiers • High Linear Output with OFDM Signals: +33 dBm at 2.5% EVM • Fully Matched to 50 ohm impedance at 4.4 to 4.9 GHz • High Output Power at 3 dB Gain Compression Point: 40 dBm Typical • Flexible Customization for other Frequency Bands using Hybrid Technology

trw rf transistor

Abstract: HBT transistor RF2123 cellular phone amplifier power control transistor TA0012 Class AB AMPLIFIER 4W trw RF POWER TRANSISTOR
Contextual Info: TA0012
 TA0012 RF2123: New High Power, High Efficiency HBT GSM Power Amplifier       
 efficiency is extremely important. Sixty percent total efficiency for a two-stage, 30dB gain GSM power amplifier IC is ideal for maximizing talk time – a key

trw RF POWER TRANSISTOR

Abstract: trw rf transistor RF2123 TA0012 HBT transistor gsm cellular power amplifier trw rf transistors
Contextual Info: TA0012
 TA0012 RF2123: New High Power, High Efficiency HBT GSM Power Amplifier       
 efficiency is extremely important. Sixty percent total efficiency for a two-stage, 30dB gain GSM power amplifier IC is ideal for maximizing talk time – a key

SOIC-16

Contextual Info: TA0006
 TA0006 Wireless Antenna Interface      The demand for consumer wireless products poses design challenges with respect to cost, performance, packaging and semiconductor technology. The author provides practical guidelines, illustrating them with an

RF2131

Abstract: TA0013 trw rf transistor HBT transistor
Contextual Info: TA0013
 TA0013 RF2131: New High Efficiency HBT Analog Cellular Power Amplifier        RF Micro Devices introduces a new power amplifier for Analog Cellular applications based on revolutionary HBT Heterojunction Bipolar Transistor technology.

MPS 808

Abstract: MWT-PH15 WPS-445122-XX mmic code h5 MPS 806 transistor MwT-10 ap910401 GaN amplifier MMA-022028-S7 mps 0820
Contextual Info: New Products in 2009 New Linear GaN Amplifiers for WiMax Applications • High Linear Output with OFDM Signals: +33 dBm at 2.5% EVM • Fully Matched to 50 ohm impedance at Typical WiMax Frequency Bands: 2.5, 3.5, and 5.5 GHz • High Output Power at 3 dB Gain Compression Point: 40 dBm Typical

trw rf transistor

Abstract: RF2131 TA0013 trw RF POWER TRANSISTOR
Contextual Info: TA0013
 TA0013 RF2131: New High Efficiency HBT Analog Cellular Power Amplifier       
 operated applications, the power-added or total efficiency is extremely important. Sixty percent total efficiency for a two-stage, 25dB gain AMPS/ETACS

qualcomm spread spectrum receiver

Abstract: Qualcomm "spread spectrum" receiver
Contextual Info: TA0023
! TA0023 Systems RF9936/RF9986: High Dynamic Range GaAs HBT LNA/Mixers for PCS       A family of fully monolithic GaAs Heterojunction Bipolar Transistor HBT LNA/Mixer products have been developed to address spread-spectrum Personal Communication System (PCS) applications in the North

C-Band Power GaAs FET HEMT Chips

Abstract: CMC 707 7 transistor solid state x-band s-parameter transistor RF TRANSISTOR 1.5 GHZ dual gate microwave fet IC MMIC X-band amplifier HEMT MMIC POWER AMPLIFIER Three MMIC Solution for an X-band RF Front End multilayer lithography ic fabrication GaAs FET HEMT Chips
Contextual Info: KU-BAND MMIC POWER AMPLIFIERS DEVELOPED USING MSAG MESFET TECHNOLOGY T his article presents the design approach and test results of 1, 1.5, 2 and 5 W, Kuband MMIC power amplifiers developed using the high performance MSAG MESFET technology. Both single-ended and

siliconix vmp4

Abstract: irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet
Contextual Info: Class-E RF Power Amplifiers Come learn about this highly efficient and widespread class of amplifiers. Here are principles of operation, improved design equations, optimization principles and experimental results. By Nathan O. Sokal, WA1HQC of Design Automation, Inc

ATF-35176

Abstract: ina10386 lnb downconverter schematic diagram ATF-35576 ATF35176 INA-10386 AN-A008 micro-X ceramic Package lna fet ATF13036 LNB down converter for Ku band
Contextual Info: Direct Broadcast Satellite Systems Application Note A009 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. For more current information, see the following publications: • AN1091, 1 and 2 Stage 10.7 to 12.7 GHz Amplifiers Using the

GaN amplifier

Abstract: GaN Bias 25 watt Gan on silicon transistor rf microwave amplifier with S Parameters rf power amplifier transistor with s-parameters rf power amplifier with s parameters S-10 S-14 high power fet amplifier schematic power amplifier mmic design high efficiency
Contextual Info: 11/02/01 LB Generic 2.5-W 60% Bandwidth C-Band MMIC Amplifier Inder J. Bahl Abstract This paper reports the design and test data of a generic 2.5-W two-stage C-band MMIC power amplifier developed using the MSAG MESFET process. We measured typically a minimum PAE of 45% and 2.5W CW output power over

GaAsTEK

Contextual Info: 8V 2W GaAs Power Amplifier Die 4.5 - 7.1 GHz ITT6401D FEATURES • • • • • • • • Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical Efficient performance with 3 to 10 Volt power supply

MPS 808

Abstract: MwT-10 252724 445122 MwT-h17 MIL-PRF38535 Power Amplifier MMIC 2.6 GHz 0218-H4N2 .H2 sot89 solar voltage regulator
Contextual Info: New Products in 2009 New Linear GaN Amplifiers for WiMax Applications • High Linear Output with OFDM Signals: +33 dBm at 2.5% EVM • Fully Matched to 50 ohm impedance at Typical WiMax Frequency Bands: 2.5, 3.5, and 5.5 GHz • High Output Power at 3 dB Gain Compression Point: 40 dBm Typical

2w,GaAs FET

Abstract: ITT6401D
Contextual Info: 8V 2W GaAs Power Amplifier Die 4.5 - 7.1 GHz ITT6401D FEATURES • • • • • • • • Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical Efficient performance with 3 to 10 Volt power supply

ATF-13484

Abstract: AN-G001 MTT-24 low noise design ATF 10136 AN-G004 "common drain" amplifier impedance matching MIXER SCHEMATIC DIAGRAM 5091-3744E 13484 active mixer
Contextual Info: Active GaAs FET Mixers Using the ATF-10136, ATF-13736, and ATF-13484 Application Note G005 NOTE: The ATF-13484 has been obsoleted. However, the design techniques used with the ATF-13484 active mixer can be applied to the ATF-13736 as well. Introduction This application note documents

s-band 50 Watt solid state power amplifier high p

Abstract: AN1038 application hybrid coupler 3dB 180 TRANS7 hf combiners AN1032 AN1038 NES2427P-60 150 watt amplifier advantages and disadvantages power combiner 4 watt VHF
Contextual Info: California Eastern Laboratories APPLICATION NOTE AN1038 A 70-W S-Band Amplifier For MMDS & Wireless Data/Internet Applications Shansong Song and Raymond Basset California Eastern Laboratories, Inc 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 DESIGN CHALLENGES

Contextual Info: RF2403 T R A N S C E IV E R FRONT-END MICRO-DEVICES Typical Applications • 915 M Hz ISM Band Products Wireless Security Systems • Transceiver Front-Ends Wireless LANs • 900 M Hz Cordless Telephones POS Terminals Product Description The RF2403 is a transceiver front-end integrating a single-stage low noise amplifier, a two-stage power amplifier,

mesfet datasheet by motorola

Abstract: AN1580 AN1599 MC33169 MMBD701LT1 MMSF4N01HD MRFIC0913 MRFIC0917 motorola operational amplifier motorola rf spice
Contextual Info: Order this document by AN1599/D AN1599 Power Control with the MRFIC0913 GaAs IPA and MC33169 Support IC Prepared by: Dominique Brunel, Christophe Fourtet, Jacques Trichet, Jean–Baptiste Verdier, Mark Williams Motorola Semiconductor Products Sector INTRODUCTION