F 739 DC
Abstract: gaas fet vhf uhf F1215 Q62702-F1215 gaas fet marking a MARKING CF AC 1507 -0720 CF739ms
Text: GaAs FET CF 739 Features N-channel dual-gate GaAs MES FET ● Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners ● Low noise ● High gain ● Low input capacitance ● ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-F1215
OT-143
F 739 DC
gaas fet vhf uhf
F1215
Q62702-F1215
gaas fet marking a
MARKING CF
AC 1507 -0720
CF739ms
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Untitled
Abstract: No abstract text available
Text: HA21001MS VHF/UHF Tuner Use GaAs IC Features • Covers VHF and UHF frequencies • Contains local OSC FETs, double balance mixer and IF amp dual gate FET • Low noise, low distortion • Surface mount package UHF RF input VHF RF input 2 1 18 AC GND2 AC GND1
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HA21001MS
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0949
Abstract: F 739 DC Q62702-F1215
Text: CF 739 GaAs FET ● ● ● ● ● CF 739 N-channel dual-gate GaAs MES FET Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners Low noise High gain Low input capacitance ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-F1215
OT-143
0949
F 739 DC
Q62702-F1215
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Type CF 739 Marking Ordering Code MSs
Abstract: SOT143 marking code 11s VTA-100
Text: CF 739 GaAs FET 3 • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal 4 applications up to 2 GHz, e.g. VHF, UHF, Sat-TV tuners 2 • Low noise • High gain 1 VPS05178 • Low input capacitance ESD: Electrostatic discharge sensitive device, observe handling precaution!
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VPS05178
Q62702-F1215
OT-143
Sep-30-1998
EHT07328
EHT07329
Type CF 739 Marking Ordering Code MSs
SOT143
marking code 11s
VTA-100
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PDF
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smd transistor marking cf
Abstract: transistor smd CF F 739 DC cf739 Q62702-F1215 F1215 CF 309 CF MARKING CODE gaas fet marking a MARKING CF
Text: GaAs FET CF 739 Data Sheet • • N-channel dual-gate GaAs MESFET Depletion mode transistor for tuned small-signal applications up to 2 GHz, e.g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device,
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OT-143
Q62702-F1215
P-SOT143-4-1
EHT07329
GPS05559
smd transistor marking cf
transistor smd CF
F 739 DC
cf739
Q62702-F1215
F1215
CF 309
CF MARKING CODE
gaas fet marking a
MARKING CF
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transistor smd cf
Abstract: CF 309 smd transistor marking cf g1 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 352 EHT07318
Text: GaAs FET CF 739 Data Sheet • • N-channel dual-gate GaAs MESFET Depletion mode transistor for tuned small-signal applications up to 2 GHz, e.g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device,
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Original
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Q62702-F1215
OT-143
P-SOT143-4-1
EHT07329
GPS05559
transistor smd cf
CF 309
smd transistor marking cf
g1 TRANSISTOR SMD MARKING CODE
TRANSISTOR SMD MARKING CODE 352
EHT07318
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3sk272
Abstract: No abstract text available
Text: High Frequency FETs 3SK272 GaAs N-Channel MES FET For VHF-UHF amplification unit: mm 2.1±0.1 • Features 0.425 1.25±0.10 0.425 Gate 2 to Source voltage Drain current Gate 1 current Gate 2 current Allowable power dissipation Channel temperature Storage temperature
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3SK272
3sk272
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3SK241
Abstract: 2V040
Text: High Frequency FETs 3SK241 GaAs N-Channel MES FET For VHF-UHF amplification unit: mm +0.2 2.8 –0.3 • Features ● Low noise-figure NF ● Large power gain PG ● Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
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3SK241
800MHz
3SK241
2V040
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Untitled
Abstract: No abstract text available
Text: High Frequency FETs 3SK273 GaAs N-Channel MES FET For VHF-UHF amplification unit: mm +0.2 2.8 –0.3 • Features +0.2 0.65±0.15 ● Low noise-figure NF ● Large power gain PG ● Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
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3SK273
800MHz
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3SK241
Abstract: No abstract text available
Text: High Frequency FETs 3SK241 GaAs N-Channel MES FET For VHF-UHF amplification unit: mm +0.2 2.8 –0.3 • Features +0.2 0.65±0.15 ● Low noise-figure NF ● Large power gain PG ● Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
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3SK241
800MHz
3SK241
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3SK273
Abstract: No abstract text available
Text: High Frequency FETs 3SK273 GaAs N-Channel MES FET For VHF-UHF amplification unit: mm +0.2 2.8 –0.3 • Features +0.2 0.65±0.15 ● Low noise-figure NF ● Large power gain PG ● Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
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3SK273
800MHz
3SK273
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3sk272
Abstract: IG2D
Text: High Frequency FETs 3SK272 GaAs N-Channel MES FET For VHF-UHF amplification unit: mm 2.1±0.1 • Features 0.425 1.25±0.10 0.425 13 V Gate 1 to Source voltage VG1S −6 V Gate 2 to Source voltage VG2S −6 V Drain current ID 50 mA Gate 1 current IG1 1 mA
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3SK272
800MHz
3sk272
IG2D
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PDF
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3SK273
Abstract: No abstract text available
Text: High Frequency FETs 3SK273 GaAs N-Channel MES FET For VHF-UHF amplification unit: mm +0.2 M Di ain sc te on na tin nc ue e/ d 2.8 –0.3 • Features 0.65±0.15 V −6 V Gate 2 to Source voltage VG2S −6 V Drain current ID 50 mA Gate 1 current IG1 1 mA Gate 2 current
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3SK273
3SK273
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PDF
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3SK241
Abstract: No abstract text available
Text: High Frequency FETs 3SK241 GaAs N-Channel MES FET For VHF-UHF amplification unit: mm +0.2 M Di ain sc te on na tin nc ue e/ d 2.8 –0.3 • Features 0.65±0.15 VG1S −6 V Gate 2 to Source voltage VG2S −6 V Drain current ID 50 mA Gate 1 current IG1 1 mA
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3SK241
3SK241
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transistor marking 7D
Abstract: marking MS 7d marking "marking ms"
Text: SIEMENS GaAs FET CF 739 Features • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device, observe handling precautions!
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OCR Scan
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Q62702-F1215
OT-143
transistor marking 7D
marking MS
7d marking
"marking ms"
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAs FET CF 739 Features • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device, observe handling precautions!
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OCR Scan
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Q62702-F1215
T-143
E3Sb05
23SLQ5
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PDF
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CF739
Abstract: 7S66 1 928 300 599 marking MS "marking ms"
Text: SIEMENS GaAs FET CF 739 Features • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device, observe handling precautions!
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OCR Scan
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Q62702-F1215
OT-143
CF739
7S66
1 928 300 599
marking MS
"marking ms"
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PDF
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HA21001MS
Abstract: ha21001
Text: HA21001 MS VHF/UHF Tuner Use GaAs IC Features • Covers VHF and UHF frequencies • Contains local OSC FETs, double balance mixer and IF amp dual gate FET • Low noise, low distortion • Surface mount package Pin Arrangement 4—' 3 Q_ C •»-* 3 Q_ C
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OCR Scan
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HA21001
HA21001MS
HA21001MS
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PDF
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gaas fet vhf uhf
Abstract: ha21001 HA21001MS C4466 MSP-18 ha2100 2200p
Text: HITACHI/ LINEAR DEVICES 2bE J> 4McJb2DE 0 0 1 1 3 5 T 4 H A 2 1 0 0 1 M S - - T*T7-OS-OS- VHF/UHF Tuner Use GaAs 1C Features HA21001MS • Covers VHF and UHF frequencies • Contains local OSC FETs, double balance mixer and IF amp dual gate FET
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OCR Scan
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HA21001MS-
001135T
HA21001MS
MSP-18)
HA21001
MSP-18
-30dBm
-40dBm
75MHz
60MHz
gaas fet vhf uhf
HA21001MS
C4466
ha2100
2200p
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PDF
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transistor marking YD ghz
Abstract: EHT07317
Text: Infineon fsclin clog iei GaAs FET CF 739 Data Sheet • N-channel dual-gate GaAs MESFET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e.g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device,
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OCR Scan
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Q62702-F1215
P-SOT143-4-1
EHT07327
transistor marking YD ghz
EHT07317
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PDF
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2SK66
Abstract: No abstract text available
Text: 2SK1092 - Preliminary SIE D • SINGLE GATE GaAs M ES FET HITACHI/ OPTOELECTRONICS VHF/UHF W IDE BAND AMPLIFIER I MMTbEQS 0011700 071 ■ HITM OUTLINE DRAWING ■ A B S O L U T E M AXIMUM R A T IN G S
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OCR Scan
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2SK1092
d--20mA,
-20mA,
/-50M
/c--20mA,
/-900M
2SK66
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS CF 739 GaAs FET F eatures • N -channel d u a l-g a te G aA s M E S FET • D epletion m ode tran sisto r for tuned sm all-signal ap p lica tio ns up to 2 G Hz, e. g. VHF, UHF, S at-TV tuners • Low noise • High gain • Low input ca p a citan ce
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OCR Scan
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EHT07529
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PDF
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2SK1092
Abstract: 2SK666
Text: 2SK1092 Preliminary SINGLE GATE GaAs MES FET VHF/UHF WIDE BAND AMPLIFIER • OUTLINE DRAWING 1.8 Z ;£T rJ = m 0~0 1 ;ä : 1• 2. 3. 4. Source G ate NC D rain Dim ensions in mra (MPAK-4) I ABSOLUTE MAXIMUM RATINGS (To-25*C ) Item Drain to Source Voltage
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OCR Scan
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2SK1092
To-25
-20mA,
50MHz
--900MHz
2SK666
2SK1092
2SK666
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PDF
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CF739 R
Abstract: CF739 siemens gaas fet
Text: 32E D • 023ti3SQ 0G17342 1 H S I P GaAsFET SIEMENS/ SPCL*. SEMICONDS CF739 T 'S I- a S ' • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain
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OCR Scan
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023ti3SQ
0G17342
CF739
00MHz
23b32ü
Q017347
CF739
CF739 R
siemens gaas fet
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