GAAS FET T79 Search Results

GAAS FET T79 Result Highlights (5)

Part	Manufacturer	Description
RJF0411JPD-00#J3	Renesas Electronics Corporation	Thermal FETs
RJF0411JPD-01#J3	Renesas Electronics Corporation	Thermal FETs
RJF0605JPV-00#Q7	Renesas Electronics Corporation	Thermal FETs
ISL95901IRZ-T	Renesas Electronics Corporation	Integrated FET Regulators
ISL6146DFRZ	Renesas Electronics Corporation	Low Voltage ORing FET Controller

GAAS FET T79 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SK2396A Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor Text: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The	Original	PDF	P10100EJ6V0SG00 2SK2396A NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
nf025 Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408 Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920	Original	PDF	X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
2SK2396 Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711 Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××）品名 µPC8119T アプリケーション移動通信電源電圧電流周波数	Original	PDF	X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
marking code C1E SMD Transistor Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817 Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17	Original	PDF	P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
UAA 1006 Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71 Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH	Original	PDF	D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
gaas fet T79 Abstract: NES1821B-30 Text: PRELIMINARY DATA SHEET 30 W L-BAND NES1821B-30 POWER GaAs MESFET OUTLINE DIMENSIONS Units in mm FEATURES • CLASS A OR AB OPERATION PACKAGE OUTLINE T-79 • HIGH OUTPUT POWER • HIGH GAIN 24±0.2 20.4±0.15 • HIGH POWER ADDED EFFICIENCY 1.0±0.1 GATE	Original	PDF	NES1821B-30 NES1821B-30 24-Hour gaas fet T79
NES1821B-30 Abstract: gaas fet T79 d3125 Text: 30 W L-BAND NES1821B-30 POWER GaAs MESFET OUTLINE DIMENSIONS Units in mm FEATURES • CLASS A OR AB OPERATION PACKAGE OUTLINE T-79 • HIGH OUTPUT POWER • HIGH GAIN 24±0.2 20.4±0.15 • HIGH POWER ADDED EFFICIENCY 1.0±0.1 GATE • PARTIALLY MATCHED	Original	PDF	NES1821B-30 NES1821B-30 st163 24-Hour gaas fet T79 d3125
nec mosfet marked v75 Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77 Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	PDF	G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
FET marking code g5d Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .	Original	PDF	R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
free transistor equivalent book 2sc Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002 Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of	Original	PDF	X10679EJHV0SG00 free transistor equivalent book 2sc uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
J265 Abstract: No abstract text available Text: S-BAND PARTIALLY MATCHED NES2527B-30 POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 30 W PACKAGE OUTLINE T-79 • LOW DISTORTION: -45 dBc IM3 (@33 dBm SCL) (Verified by a Wafer Qual Test) 24±0.2 20.4±0.15 • HIGH LINEAR GAIN: 13.0 dB	Original	PDF	NES2527B-30 1500pF 250pF NES2527-30 24-Hour J265
NES2527-30 Abstract: NES2527B-30 gaas fet T79 J265 Text: S-BAND PARTIALLY MATCHED NES2527B-30 POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 30 W PACKAGE OUTLINE T-79 • LOW DISTORTION: -45 dBc IM3 at 33 dBm SCL (Verified by a Wafer Qual Test) 24±0.2 20.4±0.15 • HIGH LINEAR GAIN: 13.0 dB	Original	PDF	NES2527B-30 1500pF 250pF NES2527-30 24-Hour gaas fet T79 J265
gaas fet T79 Abstract: NES2527-30 J265 NES2527B-30 Text: PRELIMINARY DATA SHEET S-BAND PARTIALLY MATCHED NES2527B-30 POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 30 W PACKAGE OUTLINE T-79 • LOW DISTORTION: -45 dBc IM3 (@33 dBm SCL) (Verified by a Wafer Qual Test) 24±0.2 • HIGH LINEAR GAIN: 13.0 dB	Original	PDF	NES2527B-30 NES2527B-30 1500pF 250pF NES2527-30 24-Hour gaas fet T79 NES2527-30 J265
NES2527B-30 Abstract: NES2527-30 Text: S-BAND PARTIALLY MATCHED NES2527B-30 POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 30 W PACKAGE OUTLINE T-79 • LOW DISTORTION: -45 dBc IM3 at 33 dBm SCL (Verified by a Wafer Qual Test) 24±0.2 20.4±0.15 1.0±0.1 GATE	Original	PDF	NES2527B-30 NES2527B-30 1500pF 250pF NES2527-30 24-Hour NES2527-30

MMBD2104 Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932 Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a	Original	PDF	BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
MMBD2103 Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.	Original	PDF	BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
GL 7815 Abstract: gaas fet T79 Text: PRELIMINARY DATA SHEET S-BAND INTERNALLY NEZ3436-30E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 30 W PACKAGE OUTLINE T-79 LOW DISTORTION: -45 dBc IM3 (@33 dBm SCL) (Verified by a Wafer Qual Test) HIGH LINEAR GAIN: 10.0 dB	OCR Scan	PDF	NEZ3436-30E GL 7815 gaas fet T79
gaas fet T79 Abstract: No abstract text available Text: PRELIMINARY DATA SHEET S-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS NEZ3436-30E Units in mm • HIGH OUTPUT POWER: 30 W PACKAGE OUTLINE T-79 • LOW DISTORTION: -45 dBc IMs (@33 dBm SCL) (Verified by a W afer Qual Test) • HIGH LINEAR GAIN: 10 OdB	OCR Scan	PDF	NEZ3436-30E NEZ3436-30E 24-Hour gaas fet T79
gaas fet T79 Abstract: No abstract text available Text: PRELIMINARY DATA SHEET S-BAND PARTIALLY MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS NES2527B-30 Units in mm • HIGH OUTPUT POWER: 30 W PACKAGE OUTLINE T-79 • LOW DISTORTION: -45 dBc IMs (@33 dBm SCL) (Verified by a Wafer Qual Test) • HIGH LINEAR GAIN: 13.0 dB	OCR Scan	PDF	NES2527B-30 NES2527B-30 1500pF 24-Hour gaas fet T79
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET S-BAND PARTIALLY MATCHED NES2527B-30 POWER GaAs MESFET FEATURES_ OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 30 W PACKAGE OUTLINE T-79 • LOW DISTORTION: -45 dBc IM3 (@33 dBm SCL) (Verified by a Wafer Qual Test)	OCR Scan	PDF	NES2527B-30 NES2527-30
MESFET 24A Abstract: HD 1077 O NEZ3436-30E Text: S-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS NEZ3436-30E Units in mm • HIGH OUTPUT POWER: 30 W PACKAGE OUTLINE T-79 • LOW DISTORTION: -45 dBc IM3 (@33 dBm SCL) (Verified by a Wafer Qual Test) • HIGH LINEAR GAIN: 10.0 dB • EFFICIENT LINEAR OPERATION:	OCR Scan	PDF	NEZ3436-30E NEZ3436-30E 24-Hour MESFET 24A HD 1077 O
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET 30 W L-BAND NES1821B-30 POWER GaAs MESFET OUTLINE DIMENSIONS FEATURES_ Units in mm • CLASS A OR AB OPERATION PACKAGE OUTLINE T-79 • HIGH OUTPUT POWER • HIGH GAIN • HIGH POWER ADDED EFFICIENCY • PARTIALLY MATCHED	OCR Scan	PDF	NES1821B-30 24-Hour
ES1821 Abstract: M 0737 Text: PRELIMINARY DATA SHEET 30 W L-BAND NES1821 B-30 POWER GaAs MESFET FEATURES_ OUTLINE DIMENSIONS Units in mm • C L A S S A OR AB OPERATION P A C K A G E OUTLIN E T-79 • HIGH OUTPUT POW ER • HIGH GAIN • HIGH POW ER ADDED EFFICIENCY • PARTIALLY M ATCHED	OCR Scan	PDF	NES1821 1821B-30 ES1821 M 0737
gaas fet T79 Abstract: ES182 Text: PRELIMINARY DATA SHEET_ 30 W L-BAND POWER GaAs MESFET OUTLINE DIMENSIONS FEATURES_ NE81K1M0 Units n mm • CLASS A OR AB OPERATION P A C K A G E OUTLINE T-79 • HIGH OUTPUT POWER • HIGH GAIN • HIGH POWER ADDED EFFICIENCY	OCR Scan	PDF	NE81K1M0 ES1821B-30 24-Hour gaas fet T79 ES182

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GAAS FET T79 Search Results

GAAS FET T79 Result Highlights (5)

GAAS FET T79 Datasheets Context Search

2SK2396A

nf025

2SK2396

marking code C1E SMD Transistor

UAA 1006

gaas fet T79

NES1821B-30

nec mosfet marked v75

FET marking code g5d

free transistor equivalent book 2sc

J265

NES2527-30

gaas fet T79

NES2527B-30

MMBD2104

MMBD2103

GL 7815

gaas fet T79

gaas fet T79

Untitled

MESFET 24A

Untitled

ES1821

gaas fet T79