GAAS DFN 2X2 Search Results
GAAS DFN 2X2 Result Highlights (2)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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LBEE5XV2BZ-883 | Murata Manufacturing Co Ltd | Shielded Small Wi-Fi® 11a/b/g/n/ac/ax 2x2 MIMO + Bluetooth® 5.2 Module - CCATS N/A(self classification) |
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LBEE5ZZ2XS-846 | Murata Manufacturing Co Ltd | Shielded Small Wi-Fi® 11a/b/g/n/ac/ax 2x2 MIMO + Bluetooth® 5.3 Module - CCATS N/A(self classification) |
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GAAS DFN 2X2 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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HMC536lp2e
Abstract: HMC536LP2 2x2 dfn
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HMC536LP2 536LP2E HMC536LP2E HMC536LP2 2x2 dfn | |
MMIC DFN 2x2 6
Abstract: GaAs DFN 2x2
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HMC536LP2 536LP2E HMC536LP2E HMC536LP2 MMIC DFN 2x2 6 GaAs DFN 2x2 | |
Contextual Info: HMC536LP2 / 536LP2E v01.1008 GaAs MMIC POSITIVE CONTROL T/R SWITCH, DC - 6 GHz Typical Applications Features The HMC536LP2 / HMC536LP2E is ideal for: Input P0.1dB: +33 dBm @ +5V • Cellular/PCS/3G Infrastructure Insertion Loss: 0.6 dB • WiMAX, WiBro & Fixed Wireless |
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HMC536LP2 536LP2E HMC536LP2E HMC536LP2 | |
SPDT T/R SWITCH
Abstract: HMC536LP2 HMC536LP2E 2x2 dfn
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HMC536LP2 536LP2E SPDT T/R SWITCH HMC536LP2E 2x2 dfn | |
Contextual Info: HMC536LP2 / 536LP2E v02.0409 Typical Applications Features The HMC536LP2 E is ideal for: Input P0.1dB: +33 dBm @ +5V • Cellular/PCS/3G Infrastructure Insertion Loss: 0.6 dB • WiMAX, WiBro & Fixed Wireless Positive Control: +3V or +5V • CATV/CMTS Isolation: 27 dB |
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HMC536LP2 536LP2E | |
PE42480Contextual Info: 2014-2015 High-Performance Analog Product Catalog Welcome to Peregrine Semiconductor Peregrine Semiconductor NASDAQ: PSMI , founder of RF SOI (silicon on insulator), is a leading fabless provider of high-performance, integrated RF solutions. Since 1988 Peregrine and its founding |
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DOC-35227-4 PE42480 | |
CXE2022SR
Abstract: CXE2022PCK-410 CXE2022SB CXE2022SQ CXE2022TR7 CXE2022Z CXE-2022Z amplifier DFN 2x2 MARKING RFMD CXE2022
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CXE-2022Z 50MHz 1000MHz 1000MHz CXE-2022Z CXE2022SR CXE2022PCK-410 CXE2022SB CXE2022SQ CXE2022TR7 CXE2022Z amplifier DFN 2x2 MARKING RFMD CXE2022 | |
CXE-2022
Abstract: MARKING RFMD CXE-2022Z InP transistor HEMT optimum recievers 106-172 106172
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CXE-2022Z 50MHz 1000MHz 1000MHz CXE-2022Z CXE-2022 MARKING RFMD InP transistor HEMT optimum recievers 106-172 106172 | |
MARKING RFMD
Abstract: CXE2022Z CXE2022SR CXE-2022Z inp hemt low noise amplifier CXE-2022 CXE2022PCK-410 CXE2022SB CXE2022SQ CXE2022TR7
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CXE-2022Z 50MHz 1000MHz 1000MHz CXE-2022Z MARKING RFMD CXE2022Z CXE2022SR inp hemt low noise amplifier CXE-2022 CXE2022PCK-410 CXE2022SB CXE2022SQ CXE2022TR7 | |
Contextual Info: CXE-2022Z CXE-2022Z 50MHz to 1000MHz MMIC 75 Low Noise Amplifier 50MHz to 1000MHz MMIC 75 LOW NOISE AMPLIFIER Package: 2x2 DFN Product Description Features RFMD’s CXE-2022Z is a 75 high performance low noise pHEMT MMIC amplifier utilizing a self |
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CXE-2022Z 50MHz 1000MHz 1000MHz CXE-2022Z | |
hmc646lp2
Abstract: HMC646LP2E
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HMC646LP2 646LP2E HMC646LP2E | |
Contextual Info: HMC646LP2 / 646LP2E v02.1009 GaAs MMIC 40W FAILSAFE SWITCH, 0.1 - 2.1 GHz Typical Applications Features The HMC646LP2 E is ideal for: High Input P0.1dB: +46 dBm Tx • LNA Protection & T/R Switching Low Insertion Loss: 0.4 dB • TD-SCDMA / 3G Infrastructure |
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HMC646LP2 646LP2E | |
HMC646LP2
Abstract: HMC646LP2E
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HMC646LP2 646LP2E HMC646LP2E | |
HMC646LP2
Abstract: HMC646LP2E
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HMC646LP2 646LP2E HMC646LP2E | |
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HMC597LP4
Abstract: MMIC Downconverter ku band 15 GHz power amplifier RF Demodulators HMC511LP5 amplifier DFN 2x2 gain A 12-15 GHz High Gain Amplifier transistor "RF Demodulators" SCIENTECH ELECTRONICS HMC536LP2
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HMC564LC4 HMC597LP4 MMIC Downconverter ku band 15 GHz power amplifier RF Demodulators HMC511LP5 amplifier DFN 2x2 gain A 12-15 GHz High Gain Amplifier transistor "RF Demodulators" SCIENTECH ELECTRONICS HMC536LP2 | |
amplifier DFN 2x2 gainContextual Info: AP1110 2.4~2.5 GHz Power Amplifier 2004.12.21 Preliminary AP1110 is a linear, low current power amplifier in ISM band utilizing InGaP /GaAs HBT process. The AP1110 is well suitable to be used for portable, low current 2.4GHz applications as well as for BT Bluetooth Class1 applications. |
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AP1110 AP1110 23dBm 150mA 23dBm -33dBc amplifier DFN 2x2 gain | |
Contextual Info: HMC1055LP2CE V00.0912 Typical Applications Features The HMC1055LP2CE is ideal for: Failsafe Operation - “On” When Unpowered • RFID & Electronic Toll Collection ETC Wide Vdd Range: 1.2V to 5V • Tags, Handsets & Portables Very Low On State Current: 200 nA |
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HMC1055LP2CE HMC1055LP2CE | |
XL1019-DA-EV1
Abstract: XL1016 XL1016-DA XL1019-DA
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L1016-DA 23-Mar-10 XL1016-DA XL1019-DA-EV1 XL1016 XL1019-DA | |
HMC1055Contextual Info: HMC1055LP2CE V00.0912 Typical Applications Features The HMC1055LP2CE is ideal for: Failsafe Operation - “On” When Unpowered • RFID & Electronic Toll Collection ETC Wide Vdd Range: 1.2V to 5V • Tags, Handsets & Portables Very Low On State Current: 200 nA |
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HMC1055LP2CE HMC1055LP2CE HMC1055 | |
L1019
Abstract: XL1019-DA-EV1 XL1019-DA xl1016-da L1019-DA XL1019-DA-0G00
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L1019-DA 18-Mar-10 XL1019-DA L1019 XL1019-DA-EV1 xl1016-da L1019-DA XL1019-DA-0G00 | |
MMZ20363B
Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
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bipolar MMIC 1.9V
Abstract: HMC476SC70E radar scheme 4x4 bit multipliers sensor radar uwb HMC543 HMC561 HMC610LP4E HMC642LC5 HMC649LP6E
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HMC-C045 HMC561 HMC610LP4E bipolar MMIC 1.9V HMC476SC70E radar scheme 4x4 bit multipliers sensor radar uwb HMC543 HMC561 HMC642LC5 HMC649LP6E | |
Contextual Info: HMC667LP2 / 667LP2E v02.1110 AMPLIFIERS - LOW NOISE - SMT 7 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.3 - 2.7 GHz Typical Applications Features The HMC667LP2 E is ideal for: Low Noise Figure: 0.75 dB • WiMAX, WiBro & Fixed Wireless High Gain: 19 dB • SDARS & WLAN Receivers |
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HMC667LP2 667LP2E | |
HMC667LP2
Abstract: casea tantalum 122-40-4
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HMC667LP2 667LP2E casea tantalum 122-40-4 |