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    GAAS 850 NM INFRARED EMITTING DIODE Search Results

    GAAS 850 NM INFRARED EMITTING DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    GAAS 850 NM INFRARED EMITTING DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Infrared led 850 smd

    Abstract: GaAs 850 nm Infrared Emitting Diode 850 nm Infrared Emitting Diode VCSEL array, 850nm smd plcc-2 infrared diode 850 nm Infrared Emitting Diode smd vcsel SMD INF226 infrared transistor
    Text: Infrared Light Emitting Diode OP180 & OP280 Series Features: • • • • • • • High power GaAs—OP180, 940 nm center wavelength High power GaAIAs—OP280K and OP280KT, 875 nm center wavelength VCSEL GaAlAs-OP280V, 850 nm center wavelength Point Source GaAlAs-OP280PS, 850 nm center wavelength


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    PDF OP180 OP280 GaAs--OP180, GaAIAs--OP280K OP280KT, GaAlAs-OP280V, GaAlAs-OP280PS, OP180 OP280K, OP280KT Infrared led 850 smd GaAs 850 nm Infrared Emitting Diode 850 nm Infrared Emitting Diode VCSEL array, 850nm smd plcc-2 infrared diode 850 nm Infrared Emitting Diode smd vcsel SMD INF226 infrared transistor

    L-7113F3C

    Abstract: L-7104F3C
    Text: INFRARED EMITTING DIODES L-34F3C Part No. L-7104F3C Material λP nm Lens Type GaAs 940 water clear L-34F3BT GaAs 940 blue transparent L-34SF4BT L-34SF6C L-34SF6BT L-34SF7C L-34SF7BT GaAlAs GaAlAs GaAlAs GaAlAs GaAlAs GaAlAs 880 880 860 860 850 850 Po (mW/sr)


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    PDF L-34F3C L-7104F3C L-7113F3C L-34F3BT L-34SF4C L-34SF4BT L-34SF6C L-34SF6BT L-34SF7C L-7113F3C

    GaAs 850 nm Infrared Emitting Diode

    Abstract: OP265 OP265WPS OP505 OP535
    Text: Plastic Infrared Emitting Diode OP265WPS Features: • • • • • T-1 3 mm package style Broad irradiance pattern Point source with flat lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: The OP265WPS point source model is a flat-lensed 850 nm diode with a broad radiation pattern that provides


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    PDF OP265WPS OP265WPS OP265 OP505 OP535 Bulletins50 GaAs 850 nm Infrared Emitting Diode

    OP265FAD

    Abstract: GaAs 850 nm Infrared Emitting Diode OP265 OP505 OP535 OP265FAA OP265F
    Text: Plastic Infrared Emitting Diode OP265FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP265FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is


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    PDF OP265FAA OP265 OP505 OP530 OP265FAD GaAs 850 nm Infrared Emitting Diode OP535 OP265F

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    Abstract: No abstract text available
    Text: Plastic Infrared Emitting Diode OP265FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP265FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is


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    PDF OP265FAA OP265 OP505 OP535

    Untitled

    Abstract: No abstract text available
    Text: Plastic Infrared Emitting Diode OP265FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP265FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is


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    PDF OP265FAA OP265 OP505 OP535

    Untitled

    Abstract: No abstract text available
    Text: Plastic Infrared Emitting Diode OP265FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP265FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is


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    PDF OP265FAA OP265 OP505 OP535

    Untitled

    Abstract: No abstract text available
    Text: Plastic Infrared Emitting Diode OP266FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP266FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is


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    PDF OP266FAA OP266

    OP265

    Abstract: OP265AA OP265AB OP265AC OP265AD OP505 OP535
    Text: Plastic Infrared Emitting Diode OP265AA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP265AA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is


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    PDF OP265AA OP265 OP505 OP535 OP265AB OP265AC OP265AD

    Untitled

    Abstract: No abstract text available
    Text: Plastic Infrared Emitting Diode OP265FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP265FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is


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    PDF OP265FAA OP265 OP505 OP535

    OP266

    Abstract: OP506 OP535 OP266FAD OP266F
    Text: Plastic Infrared Emitting Diode OP266FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP266FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is


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    PDF OP266FAA OP266 OP506 OP535 OP266FAD OP266F

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    Abstract: No abstract text available
    Text: Plastic Infrared Emitting Diode OP266AA SERIES Features: • T-1 3 mm package style  Narrow irradiance pattern  Dome lens  Higher power output than GaAs at equivalent drive currents  850 nm diode Description: Each device in the OP266AA series is a high intensity gallium aluminum arsenide infrared emitting diode (GaAIAs)


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    PDF OP266AA

    Infrared Emitting Diodes

    Abstract: No abstract text available
    Text: SMD INFRARED EMITTING DIODES BL-LS3528B1S3IR        Features: 3.5mmx2.8mm SMD, 1.9mm THICKNESS PLCC2 package, Infrared LED High Reliability Peak Wavelength at 940, 880, 850nm Water Clear, yellow Transparent, Blue Transparent available


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    PDF BL-LS3528B1S3IR 850nm 100mA) 2000pcs/Reel Infrared Emitting Diodes

    BPT-BP2334

    Abstract: BPT-BP2931 BPT-BP1A34 BPT-BP0334 BIR-BM13J4G BIR-BM17J4G BPD-BQA934 400-110 BPT-BP0A31 bir_nm23c2
    Text: Infrared Emitting Diode End Look 2 Chip Part Number Material Wavelength p BIR-BM1331 GaAlAs/GaAs BIR-BM1331-A Lens Color V F V @ I F =50m A Ee(mW/cm ) @ I F =50m A Typ. Max. Min. Typ. 940 1.25 1.50 1.4 2.3 GaAlAs/GaAs 940 1.25 1.50 1.4 2.3 BIR-BO1331 GaAlAs/GaAlAs


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    PDF BIR-BM1331 BIR-BM1331-A BIR-BO1331 BIR-BO0331 BIR-BN0331 BIR-BM1731 BIR-BM1731-A IR-17 BPT-BP2334 BPT-BP2931 BPT-BP1A34 BPT-BP0334 BIR-BM13J4G BIR-BM17J4G BPD-BQA934 400-110 BPT-BP0A31 bir_nm23c2

    BL-L314IR

    Abstract: No abstract text available
    Text: INFRARED EMITTING DIODES BL-L314XX-IR Features: Ø Ø Ø Ø Ø 3.0mm Round Type Infrared LED High Reliability Peak Wavelength at 940, 880, 850nm Water Clear, yellow Transparent, Blue Transparent available IC compatible /Low current capability. Application


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    PDF BL-L314XX-IR 850nm BL-L314IRACRD 17g/pcs BL-L314IR

    BL-L513IR

    Abstract: No abstract text available
    Text: INFRARED EMITTING DIODES BL-L513XX-IR Features: Ø Ø Ø Ø Ø 5.0mm Round Type Infrared LED High Reliability Peak Wavelength at 940, 880, 850nm Water Clear, yellow Transparent, Blue Transparent available IC compatible /Low current capability. Ø Ø Ø Ø


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    PDF BL-L513XX-IR 850nm BL-L513IARD BL-L513IR

    5v infrared camera

    Abstract: BL-L813
    Text: INFRARED EMITTING DIODES BL-L813XX-IR Features: 8.0mm Round Type Infrared LED High Reliability Peak Wavelength at 940, 880, 850nm Water Clear, yellow Transparent, Blue Transparent available IC compatible /Low current capability. Application Free air transmission system


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    PDF BL-L813XX-IR 850nm BL-L813IRAC BL-L813IRAB BL-L813IRBC BL-L813IRBB BL-L813IRCC 880nm 940nm 430nm/Blue 5v infrared camera BL-L813

    BL-L513IRAB

    Abstract: BL-L513IR BL-L513XX-IR BL-L513IRAC BL-L513IRBB infrared circuit BL-L513IRCC
    Text: INFRARED EMITTING DIODES BL-L513XX-IR Features: 5.0mm Round Type Infrared LED High Reliability Peak Wavelength at 940, 880, 850nm Water Clear, yellow Transparent, Blue Transparent available IC compatible /Low current capability. Application Free air transmission system


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    PDF BL-L513XX-IR 850nm BL-L513IRAC 880nm 940nm 430nm/Blue 470nm/Blue 505nm/Ultra 525nm/Ultra BL-L513IRAB BL-L513IR BL-L513XX-IR BL-L513IRAC BL-L513IRBB infrared circuit BL-L513IRCC

    L314XX

    Abstract: BL-L314XX-IR BL-L314IRCC infrared circuit BL-L314IR
    Text: INFRARED EMITTING DIODES BL-L314XX-IR Features: 3.0mm Round Type Infrared LED High Reliability Peak Wavelength at 940, 880, 850nm Water Clear, yellow Transparent, Blue Transparent available IC compatible /Low current capability. Application Free air transmission system


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    PDF BL-L314XX-IR 850nm BL-L314IRAC BL-L314IRAB BL-L314IRBC BL-L314IRBB BL-L314IRCC 880nm 940nm 430nm/Blue L314XX BL-L314XX-IR BL-L314IRCC infrared circuit BL-L314IR

    infrared emitting CIRCUIT

    Abstract: infrared circuit diagram BL-L314IRAC BL-L314IRCB
    Text: INFRARED EMITTING DIODES BL-L314XX-IR Features: Ø Ø Ø Ø Ø 3.0mm Round Type Infrared LED High Reliability Peak Wavelength at 940, 880, 850nm Water Clear, yellow Transparent, Blue Transparent available IC compatible /Low current capability. Application


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    PDF BL-L314XX-IR 850nm BL-L314IRAC 30KHz 300Hz 100KHz 10KHz infrared emitting CIRCUIT infrared circuit diagram BL-L314IRAC BL-L314IRCB

    GaAs 850 nm Infrared Emitting Diode

    Abstract: smd diode A4 VCSEL array, 850nm 850 nm Infrared Emitting Diode smd vcsel SMD OPOP280V OP280 OP580 OP280K
    Text: PLCC-2 Pkg Infrared Light Emitting Diode OP180 & OP280 Series Features: • SMD Package • High power GaAs—OP180, 940 nm typical peak wavelength • Standard GaAlAs-OP280, 890nm typical peak wavelength • High power GaAIAs—OP280K and OP280KT, 875 nm typical peakwavelength


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    PDF OP180 OP280 GaAs--OP180, GaAlAs-OP280, 890nm GaAIAs--OP280K OP280KT, GaAlAs-OP280V, GaAlAs-OP280PS, OP180 GaAs 850 nm Infrared Emitting Diode smd diode A4 VCSEL array, 850nm 850 nm Infrared Emitting Diode smd vcsel SMD OPOP280V OP580 OP280K

    vcsel SMD

    Abstract: 850 nm Infrared Emitting Diode smd GaAs 850 nm Infrared Emitting Diode OP280V VCSEL array, 850nm OP280 OP580 OPOP280V GaAs 850 nm Infrared Emitting Diode, Range-OP180
    Text: PLCC-2 Pkg Infrared Light Emitting Diode OP180 & OP280 Series Features: • SMD Package • High power GaAs—OP180, 940 nm typical peak wavelength • Standard GaAlAs-OP280, 890nm typical peak wavelength • High power GaAIAs—OP280K and OP280KT, 875 nm typical peakwavelength


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    PDF OP180 OP280 GaAs--OP180, GaAlAs-OP280, 890nm GaAIAs--OP280K OP280KT, GaAlAs-OP280V, GaAlAs-OP280PS, OP180 vcsel SMD 850 nm Infrared Emitting Diode smd GaAs 850 nm Infrared Emitting Diode OP280V VCSEL array, 850nm OP580 OPOP280V GaAs 850 nm Infrared Emitting Diode, Range-OP180

    GaAs 1000 nm Infrared Diode,

    Abstract: No abstract text available
    Text: GaAs infrared light-emitting diode SIR-5682ST3F This infrared GaAs LED is housed in a compact, transparent, 5 mm plastic housing. It radiates at a wavelength of 850 nm for use with most optical voice or data transmission systems. Dimensions U n its: mm Features


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    PDF SIR-5682ST3F SIR-5682ST3F dSIR-5682ST3F GaAs 1000 nm Infrared Diode,

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    Abstract: No abstract text available
    Text: SIR-5682ST3F GaAs infrared light-emitting diode This infrared GaAs LED is housed in a compact, transparent, 5 mm plastic housing. It radiates at a wavelength of 850 nm for use with most optical voice or data transmission systems. Dimensions U n its: mm Features


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    PDF SIR-5682ST3F 001030S