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    GAAS 3 GHZ RF AMPLIFIER OPERATING TEMPERATURE Search Results

    GAAS 3 GHZ RF AMPLIFIER OPERATING TEMPERATURE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation

    GAAS 3 GHZ RF AMPLIFIER OPERATING TEMPERATURE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    spf-5043

    Abstract: spf5043z SPF-5043Z SPF5043 EVB1 mch185a101jk a1 mmic 80021 MMIC AMPLIFIER 6-20 GHZ TAJB104KLRH
    Text: Preliminary Information SPF-5043Z Product Description The SPF-5043Z is a high performance pHEMT MMIC LNA designed for operation from 100-4000 MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations.


    Original     		PDF SPF-5043Z SPF-5043Z EDS-105475 spf-5043 spf5043z SPF5043 EVB1 mch185a101jk a1 mmic 80021 MMIC AMPLIFIER 6-20 GHZ TAJB104KLRH

    spf 51z

    Abstract: 0/spf 51z
    Text: Advanced Information SPF-5122Z 400-3000 MHz, GaAs pHEMT Low Noise MMIC Amplifier Product Description The SPF-5122Z is a high performance pHEMT MMIC LNA designed for operation from 400-3000 MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations.


    Original     		PDF SPF-5122Z SPF-5122Z 900MHz EDS-105470 spf 51z 0/spf 51z

    4350Z

    Abstract: No abstract text available
    Text: Advanced Information SPF-5043Z 400-3000 MHz, GaAs pHEMT Low Noise MMIC Amplifier Product Description The SPF-5043Z is a high performance pHEMT MMIC LNA designed for operation from 400-3000 MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations.


    Original     		PDF SPF-5043Z SPF-5043Z EDS-105475 4350Z

    Untitled

    Abstract: No abstract text available
    Text: 17.0-25.0 GHz GaAs MMIC Power Amplifier P1022-BD February 2007 - Rev 05-Feb-07 Features Chip Device Layout Excellent Transmit Output Stage Temperature Compensated Output Detector On-Chip ESD Protection 20.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point


    Original     		PDF P1022-BD 05-Feb-07 MIL-STD-883 XP1022-BD-000V XP1022-BD-EV1 XP1022-BD

    DM6030HK

    Abstract: TS3332LD XB1004 XP1022-BD XU1002 TRANSISTOR 9642
    Text: 17.0-25.0 GHz GaAs MMIC Power Amplifier P1022-BD February 2007 - Rev 05-Feb-07 Features Chip Device Layout Excellent Transmit Output Stage Temperature Compensated Output Detector On-Chip ESD Protection 20.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point


    Original     		PDF P1022-BD 05-Feb-07 MIL-STD-883 XP1022-BD-000V XP1022-BD-EV1 XP1022-BD DM6030HK TS3332LD XB1004 XU1002 TRANSISTOR 9642

    Untitled

    Abstract: No abstract text available
    Text: 17.0-25.0 GHz GaAs MMIC Power Amplifier P1022-BD February 2007 - Rev 05-Feb-07 Features Chip Device Layout Excellent Transmit Output Stage Temperature Compensated Output Detector On-Chip ESD Protection 20.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point


    Original     		PDF 05-Feb-07 P1022-BD MIL-STD-883 XP1022-BD-000V XP1022-BD-EV1 XP1022-BD

    XD9001

    Abstract: D1008-BD XD1008-BD-000V mmic distributed amplifier XD1008 DM6030HK TS3332LD
    Text: 30 kHz - 40 GHz GaAs MMIC Distributed Amplifier March 2009 - Rev 19-Mar-09 D1008-BD Features Chip Device Layout 15 dB Gain 22.5 dBm P1dB at 22 GHz 4.5 dB Noise Figure at 26 GHz Unconditional Stability over Temperature Range 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 19-Mar-09 D1008-BD MIL-STD-883 XD1008 XD9001. XD9001 D1008-BD XD1008-BD-000V mmic distributed amplifier DM6030HK TS3332LD

    XP1001

    Abstract: XU1001 84-1LMI P1001 XB1002
    Text: 26.0-40.0 GHz GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 P1001 Features Chip Device Layout High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 11.0 dB Small Signal Gain


    Original     		PDF 05-May-05 P1001 MIL-STD-883 XP1001 XU1001 84-1LMI P1001 XB1002

    Untitled

    Abstract: No abstract text available
    Text: 17.0-25.0 GHz GaAs MMIC Power Amplifier P1022-BD November 2006 - Rev 15-Nov-06 Features Chip Device Layout Excellent Transmit Output Stage Temperature Compensated Output Detector On-Chip ESD Protection 20.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point


    Original     		PDF P1022-BD 15-Nov-06 MIL-STD-883 XP1022-BD-000V XP1022-BD-EV1 XP1022-BD

    Untitled

    Abstract: No abstract text available
    Text: HMC261 v01.0500 MICROWAVE CORPORATION GaAs MMIC MEDIUM POWER DISTRIBUTED AMPLIFIER, 20 - 40 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC261 is ideal for: Stable Gain vs. Temperature: 14dB ± 1.5dB • MMW Point-to-Point Radios High Reverse Isolation: 40 ~ 50 dB


    Original     		PDF HMC261 HMC261

    Untitled

    Abstract: No abstract text available
    Text: HMC262 v01.0500 MICROWAVE CORPORATION GaAs MMIC LOW NOISE AMPLIFIER, 15 - 24 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC262 LNA is ideal for: Excellent Noise Figure: 2dB • Millimeter Wave Point-to-Point Radios Stable Gain vs Temperature: 25 dB ± 1.5 dB


    Original     		PDF HMC262 HMC262

    P1019-BD

    Abstract: No abstract text available
    Text: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1019-BD July 2006 - Rev 30-Jul-06 Features Excellent Transmit Output Stage Temperature Compensated Output Detector 18.0 dB Small Signal Gain +27.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 30-Jul-06 P1019-BD MIL-STD-883 XP1019-BD-000X XP1019-BD-EV1 XP1019

    XP1019-BD

    Abstract: P1019-BD
    Text: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1019-BD October 2008 - Rev 10-Oct-08 Features Excellent Transmit Output Stage Temperature Compensated Output Detector 18.0 dB Small Signal Gain +27.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF P1019-BD 10-Oct-08 Mil-Std-883 XP1019 XP1019-BD P1019-BD

    Untitled

    Abstract: No abstract text available
    Text: 26.0-40.0 GHz GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 P1001 Features Chip Device Layout High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 11.0 dB Small Signal Gain


    Original     		PDF 05-May-05 P1001 MIL-STD-883

    pHEMT transistor MTBF

    Abstract: No abstract text available
    Text: 17.0-24.0 GHz GaAs MMIC Surface Mount Power Amplifier March 2005 - Rev 01-Mar-05 P1000P1 Features Packaged Chip Device tio n Surface Mount Leadless Package High Linearity Output Amplifier Temperature Compensated Output Power Detector Excellent Input/Output Match


    Original     		PDF 01-Mar-05 P1000P1 XP1000 pHEMT transistor MTBF

    PCB Rogers RO4003

    Abstract: 0170 v1 RO4003 XP1000 XP1000P1
    Text: 17.0-24.0 GHz GaAs MMIC Surface Mount Power Amplifier P1000P1 May 2002 - Rev 01-May-02 Features Packaged Chip Device y Surface Mount Leadless Package High Linearity Output Amplifier Temperature Compensated Output Power Detector Excellent Input/Output Match


    Original     		PDF P1000P1 01-May-02 XP1000 PCB Rogers RO4003 0170 v1 RO4003 XP1000P1

    Untitled

    Abstract: No abstract text available
    Text: 30.0-36.0 GHz GaAs MMIC Power Amplifier P1017-BD December 2009 - Rev 01-Dec-09 Features Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept OIP3


    Original     		PDF P1017-BD 01-Dec-09 MIL-STD-883 P1017-BD-EV1 XP1017-BD

    P1000 diode

    Abstract: diode p1000 84-1LMI P1000 XB1004 XP1000 XU1000
    Text: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1000 May 2005 - Rev 05-May-05 Features Chip Device Layout High Linearity Output Amplifier Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 19.0 dB Small Signal Gain


    Original     		PDF P1000 05-May-05 MIL-STD-883 P1000 diode diode p1000 84-1LMI P1000 XB1004 XP1000 XU1000

    XD9001

    Abstract: No abstract text available
    Text: 30 kHz - 40 GHz GaAs MMIC Distributed Amplifier October 2008 - Rev 30-Oct-08 D1008-BD Features Chip Device Layout 15 dB Gain 22.5 dBm P1dB at 22 GHz 4.5 dB Noise Figure at 26 GHz Unconditional Stability over Temperature Range 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 30-Oct-08 D1008-BD MIL-STD-883 XD1008-BD-000V XD1008-BD-EV1 XD1008 XD9001

    ID430

    Abstract: No abstract text available
    Text: 26.0-40.0 GHz GaAs MMIC Power Amplifier May 2007 - Rev 02-May-07 P1001-BD Features Chip Device Layout High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 10.0 dB Small Signal Gain


    Original     		PDF 02-May-07 P1001-BD MIL-STD-883 XP1001-BD-000V XP1001-BD-000W XP1001-BD-EV1 XP1001 ID430

    XD9001

    Abstract: D1008-BD XD1008-BD XD-100 mmic distributed amplifier mmic s2 transistor BD 140 XD1008 DM6030HK TS3332LD
    Text: 30 kHz - 40 GHz GaAs MMIC Distributed Amplifier February 2009 - Rev 05-Feb-09 D1008-BD Features Chip Device Layout 15 dB Gain 22.5 dBm P1dB at 22 GHz 4.5 dB Noise Figure at 26 GHz Unconditional Stability over Temperature Range 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 05-Feb-09 D1008-BD MIL-STD-883 XD1008 XD9001. XD9001 D1008-BD XD1008-BD XD-100 mmic distributed amplifier mmic s2 transistor BD 140 DM6030HK TS3332LD

    Untitled

    Abstract: No abstract text available
    Text: 26.0-40.0 GHz GaAs MMIC Power Amplifier January 2007 - Rev 26-Jan-07 P1001-BD Features Chip Device Layout High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 10.0 dB Small Signal Gain


    Original     		PDF 26-Jan-07 P1001-BD MIL-STD-883 XP1001-BD-000X XP1001-BD XP1001-BD-EV1

    P1019-BD

    Abstract: No abstract text available
    Text: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1019-BD July 2006 - Rev 30-Jul-06 Features Excellent Transmit Output Stage Temperature Compensated Output Detector 18.0 dB Small Signal Gain +27.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF P1019-BD 30-Jul-06 MIL-STD-883 XP1019-BD-000X XP1019-BD-EV1 XP1019 P1019-BD

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE CORPORATION HMC262 v01.0500 GaAs MMIC LOW NOISE AMPLIFIER, 15 - 24 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC262 LNA is ideal for: Excellent Noise Figure: 2dB • Millimeter Wave Point-to-Point Radios Stable Gain vs Temperature: 25 dB ± 1.5 dB


    Original     		PDF HMC262 HMC262