GA 37 931 Search Results

bb 36 931

Abstract: BB36931 ba741 BH 37 933 ba 37 931 BH37931 BB36-931 BD37933 BH 36 933 BB39931
Contextual Info: moulded bridges o ponts moulés THOMSON-CSF Vr = Types 15A 141 8 A ,1 BY BA BB BD BF BH 26 26 26 26 26 26 933 933 933 933 933 933 BY 38 BA 38 BB 38 BD 38 BF 38 BH 38 10A‘1» BY BA BB BD BF BH 36 36 36 36 36 36 933 933 933 933 933 933 15A 1> 931 931 931

HW-64

Contextual Info: R S ERIES - INDUSTRIAL CABINETS OVERVIEW: Optima’s standard cabinet offering for industrial applications, the RA and RC are designed to exceed the industry standards for test instrumentation, industrial controls & electronic applications. Utilizing a field proven extrusion

NE38018 V68

Abstract: transistor NEC D 587 NE38018 NE38018-T1 NE38018-T2 VP15-00-3 37792
Contextual Info: PRELIMINARY DATA SHEET Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OIP3 = 22 dBm V67 , OIP3 = 23 dBm (V68) typ. at f = 2 GHz

facon bf 39933

Abstract: facon BA 204 115 Facon Bb 37 933 facon bh 39933 BD 39-931 Facon BH 37 933 bd 39933 FBH15 facon bd 39933 Facon bh 36931
Contextual Info: FACON 4SE D • 3M5b203 □□□□□Ob S FACON SEMICONDUCTEURS/SEMtCONDUCTORS ■ FCN ~T~2 3 ' 0 { single phase moulded bridges 0,8 Amp to 1,5 Amp ponts monophasés moulés 0,8 Amp à 1,5 Amp V RRM Typ es V r MS recom ­ mended max id on re­ sistive load

21134 015

Abstract: nec K 3570 T 318 TE 2395 marking v67 of ic ST 4051
Contextual Info: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OlPs = 22 dBm V67 , OlPs = 23 dBm (V68) typ. at f = 2 GHz

62703-F

Abstract: CFY30 GaAs FET cfy 19 siemens gaas fet
Contextual Info: fl2 3 b3 2ü BSE D GaAs FET SIEMENS/ 0G1734Ô 2 « S I P SPCLi SEMICONDS CFY30 T " '3 1 • • • • • • • Low noise Fm n = 1.4 dB at 4 GHz) High gain (11.5 dB typ. at 4 GHz) For oscillators up to 12 GHz For amplifiers up to 6 GHz Ion-implanted planar structure

Contextual Info: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. G a = 14.5 dB typ. O IP 3 = 22 dBm V67 , O IP 3 = 23 dBm (V68) typ. at f = 2 GHz

L103B

Abstract: 6Z121 r302b 2SA179 D15105 HGR-30 BC45B Z-59 lz-173 Z436
Contextual Info: R9 1 1K A 33 0 33 0 R P2 0 10 5 V _C PU V _C PU ST P C LK # S LP # IN T R N MI A N3 1 A DS # R4 4 T DO T DI T MS T CK P ICD 1 P ICD 0 33 0 ST P C LK # S LP # IN T R N MI R P1 4 10 5 10P 8R -1 K R 1 2 3 4 6 7 8 9 A G3 5 A H3 0 M3 6 L3 7 AL3 3 A N3 7 A N3 5

Contextual Info: Optima EPS  ▲ Optima Electronic Desk Systems Desk System Utilizes Standard 21” Height Optima Vertical Cabinet System includes up to two Optima Cabinets All Optima desks use the same contemporary cabinet designs RA and RC Series that highlight the Optima

mdd 42

Abstract: Am22A 2SA179 78L05 TT 2206 54F01 CQ242 71-51C00-D02 LZ-173 KZ206
Contextual Info: AK 8 A H1 2 AH 8 AN 9 AL1 5 A H1 0 AL 9 AH 6 A K1 0 AN 5 AL 7 A K1 4 AL 5 AN 7 AE 1 Z6 AG3 AC 3 AJ 1 AE 3 AB 6 AB 4 AF 6 Y3 AA 1 AK 6 Z4 AA 3 AD 4 H RE Q# 0 H RE Q# 1 H RE Q# 2 H RE Q# 3 H RE Q# 4 A K1 8 A H1 6 A H1 8 AL1 9 AL1 7 A DS # A N3 1 H R EQ#[0.4]

6323 GA

Abstract: transistor NEC D 882 p D413 transistor D2396 transistor d507 D484 transistor D2388 transistor d528 transistor D773 d772 transistor
Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES x 2.1 ±0.2 1.25 ±0.1 Low noise figure QUANTITY PART NUMBER PACKING STYLE

ct 5066

Abstract: 617 610 372 A ST 9727 semelec denso toyota
Contextual Info: [sO OPTOELECTHOWICS AUTHORIZED REPRESENTATIVES AND DISTRIBUTORS North American Technical Representatives ALABAMA Com Rep Madison Tel: 256-772-9982 Fax: 256-772-8693 CANADA Cont. Canadian Source Corp Kanata, Ontario Tel: 613-599-5882 Fax: 613-599-5886 INDIANA (Cont.)

Contextual Info: l a on i ss ion e of lut r P So Enclosures & Components Cooling elements as front or rear panel in the 19-inch technology Heat Sink Front Panels System Platforms Backplanes Enclosures & Components Cabinets Rotary Switches Da t a sheet Heat Sink Front Panels

NEC K 2500

Abstract: OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905
Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES Low noise figure NF = 0.6 dB TYP. at f = 2 GHz High associated gain Ga = 16 dB TYP. at f = 2 GHz

C5802

Abstract: c1226a modern china tv 8893 circuit diagram c5888 Reducing sleeve, AWG 16-20 8741 substitution
Contextual Info: What’s New? E X PA N D E D C O M P E T I T I V E O F F E R I N G S Cross-Reference & Online Spec Sheets We have expanded our Carol Brand Electronics offering and now have more competitive crosses than anyone. Many of these cables are in stock and ready for

transistor c3150

Abstract: c3271 KEMA KEUR thermostat C4108
Contextual Info: What’s New? E X PA N D E D C O M P E T I T I V E O F F E R I N G S Cross-Reference & Online Spec Sheets We have expanded our Carol Brand Electronics offering and now have more competitive crosses than anyone. Many of these cables are in stock and ready for

MIG50Q7CSB1X

Abstract: IPM toshiba MG300Q2YS MG150J7KS60 MIG200Q2CSB1X MG200J6ES60 MG200Q2YS60A MG300Q2YS60A japan servo co KP56LM2-503 MG400Q2YS60A
Contextual Info: New Product Guide Compact IGBT Modules & Compact IPM NEW PRODUCT GUIDE Compact IGBT Modules Features • The new package technology achieved small and compact size. • The new generation IGBT and FRD chips achieved low loss and low emission noise. • Fault-signal output circuit short circuit and overtemperature is included.

Hitachi 64180 manual

Abstract: G4PS245 VGA 15 PIN wiring DIAGRAM Hitachi 64180 MODEL 100 schematic FM TRANSMITTER TWO WATTS 80SM epson printer rs 485 multidrop full duplex 8-Bit Microprocessor CPU
Contextual Info: G4LC4 Model 100 Processor User’s Guide G4LC4 mistic MODEL 100 PROCESSOR USER’S GUIDE This technical document describes the features, specifications, and operations of the product. For specific wiring connections, dimensions, and operational specifications of I/O modules,

unitronics

Abstract: ACTIVE ELECTRONICS gentech 301 66211 Crystal Semiconductors Conley and Associates Nanjing Micro One Electronics 77535
Contextual Info: Worldwide Representatives and Distributors Section 13: WORLDWIDE SALES REPRESENTATIVES AND DISTRIBUTORS Micrel Offices . 1 U.S. Sales Representatives . 2

DP 704

Abstract: 898N 9576 GM 455T 879N 879F 855p transistor 9751 UPC 923 642T
Contextual Info: PICO Pico # • Glass Fuses and Fuse Holders 905 • Constructed of tough black thermoset UL94V0 . Includes 3 springs for various fuse sizes and spring-locked, bayonet type knob. Supplied with 15” loop of 14 gauge red wire. Use with Glass SFE 7-1/2, 9, 14, 20, AGA, AGC,

toshiba smd marking

Abstract: SA MARKING SMD mos DONG YANG MOTOR kec smd marking smd marking S3A lg ultra slim tpc6004 TPC6001 TPC6002 TPC6005
Contextual Info: Power MOSFETs VS-6 Series PRODUCT GUIDE The four key features of the VS 4-1 Package 1 Ultra-thin package “ “ Toshiba have developed a new 6-pin SMD package for power MOSFETs known as the VS-6 . This package allows these devices to be used in compact, thin, lightweight, high-efficiency

5252 F mosfet

Contextual Info: New Product Guide Photorelay TLP227GA Series The TLP227GA Series of general-purpose photorelays features devices whose OFF-state voltage 400 V is superior to that of TLP227G Series devices (350 V). This superior OFF-state voltage allows larger safety margins to

GT30J124

Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Contextual Info: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.

Contextual Info: SALES REPRESENTATIVES AND DISTRIBUTORS n11111 1111 1111 11111 m 1111111111111111111 ii i CORPORATE HEADQ UARTERS Pericom Semiconductor Corporation 2 3 8 0 Be r i n g Dr i ve S a n J o se , C A 95131