G30N60HS IGBT Search Results

G30N60HS IGBT Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
GT30J110SRA		Toshiba Electronic Devices & Storage Corporation	IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N)
TLP5702H		Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L
TLP5705H		Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB

G30N60HS IGBT Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
g30n60hs Abstract: G30N60hs IGBT G30N60 SGP30N60HS 600v 30a IGBT SGW30N60HS igbt 600V 30A infineon SGW30N60HS PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 Text: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	PDF	SGP30N60HS SGW30N60HS PG-TO-220-3-1 PG-TO-247-3 G30N60HS SGW30N60HS g30n60hs G30N60hs IGBT G30N60 SGP30N60HS 600v 30a IGBT igbt 600V 30A infineon SGW30N60HS PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21
g30n60hs Abstract: g30n60 SGW30N60HS 1A20A Text: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	PDF	SGP30N60HS SGW30N60HS PG-TO-220-3-1 PG-TO-247-3-21 PG-TO-220-3-1 SGW30N60HS g30n60hs g30n60 1A20A
g30n60hs Abstract: g30n60 SGW30N60HS SGP30N60HS Text: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	PDF	SGP30N60HS SGW30N60HS PG-TO-220-3-1 PG-TO-247-3-21 PG-TO-220-3-1 SGW30N60HS g30n60hs g30n60
g30n60hs Abstract: g30n60 RG111 SGW30N60HS Text: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	PDF	SGP30N60HS SGW30N60HS PG-TO-220-3-1 O-220AB) PG-TO-247-3-1 O-247AC) SGW30N60HS g30n60hs g30n60 RG111
G30N60HS Abstract: SGP30N60HS G30N60h SGW30N60HS G30N60 g30n60hs pspice high frequency igbt G30N60hs IGBT PG-TO-247-3 PG-TO-220-3-1 PG-TO-247-3-21 Text: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	PDF	SGP30N60HS SGW30N60HS PG-TO-220-3-1 PG-TO-247-3 G30N60HS SGW30N60HS G30N60HS SGP30N60HS G30N60h G30N60 g30n60hs pspice high frequency igbt G30N60hs IGBT PG-TO-247-3 PG-TO-220-3-1 PG-TO-247-3-21
g30n60hs Abstract: G30N60hs IGBT g30n60 SGP30N60HS G30N60h g30n60hs pspice high frequency igbt SGW30N60HS PG-TO-247-3-21 PG-TO-220-3-1 PG-TO247-3-21 Text: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	PDF	SGP30N60HS SGW30N60HS PG-TO-220-3-1 PG-TO-247-3-21 G30N60HS g30n60hs G30N60hs IGBT g30n60 SGP30N60HS G30N60h g30n60hs pspice high frequency igbt SGW30N60HS PG-TO-247-3-21 PG-TO-220-3-1 PG-TO247-3-21